Winbond Electronics Corporation W972GG8KS25I

Overview

W972GG8KS25I from Winbond Electronics is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, industrial temperature range (–40°C to +95°C), and on-die termination (ODT) for signal integrity in high-speed memory subsystems used in networking routers and industrial control HMI panels.

For engineers reviewing the W972GG8KS25I datasheet, W972GG8KS25I pinout, W972GG8KS25I application, or W972GG8KS25I equivalent, key selection criteria include its industrial-grade thermal rating, ODT programmability, OCD impedance calibration support, SSTL_18 interface compliance, and WBGA-60 package compatibility with legacy DDR2 controller designs.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous data strobes. It supports programmable CAS latency (CL = 3–7), additive latency (AL = 0–2), and write latency (WL = RL − 1), enabling precise timing control across varying system clock domains.

Functional operation includes auto-precharge, burst interrupt, posted CAS, bi-directional DM masking, and dual refresh modes (auto and self-refresh). Its internal block diagram integrates eight independent banks, prefetch buffers, and dedicated ODT/OCD control logic tied to EMR(1)/EMR(2) registers for dynamic impedance tuning and termination activation.

Key Specifications

Pinout & Package

W972GG8KS25I uses a 60-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 9.5 mm with 0.8 mm ball pitch. The package features separate power domains (VDD, VDDQ, VDDL), dedicated DQ ground (VSSQ), and DLL ground (VSSDL) to minimize switching noise coupling into timing-critical paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M8CB-37E:H and IS42S16400F-3BL, W972GG8KS25I delivers higher density (2 Gb), guaranteed industrial temperature operation, and advanced signal integrity features (OCD, RDQS, programmable AL), making it optimal for thermally demanding, high-bandwidth embedded memory applications where long-term reliability is critical.

Availability

W972GG8KS25I is available at Aetrix Electronics and suitable for networking infrastructure, industrial HMI, medical imaging control units, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W972GG8KS25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W972GG8KS25I belongs to Winbond's DDR2 SDRAM product line, designed specifically for high-reliability embedded systems needing industrial-grade thermal performance, JEDEC-compliant timing, and robust signal integrity features in compact WBGA packaging.

FAQ

What is the maximum operating frequency supported by W972GG8KS25I?

W972GG8KS25I supports DDR2-800 operation, corresponding to a 400 MHz clock frequency and 800 MT/s data transfer rate. Its AC specifications are validated for tCK = 2.5 ns (CL = 5, 5-5-5 timing) and tCK = 2.5 ns (CL = 6, 6-6-6 timing) across the full –40°C to +95°C case temperature range, with appropriate refresh rate adjustments above 85°C.

Does W972GG8KS25I support differential DQS operation?

Yes, W972GG8KS25I supports differential DQS/DQS operation when enabled via EMR(1) bit A10 = 0. In this mode, DQS (ball H8/H3) and DQS (ball K7/L2) function as a complementary strobe pair edge-aligned with read data and center-aligned with write data, improving jitter tolerance and timing margin in high-speed layouts.

How is on-die termination (ODT) configured on W972GG8KS25I?

ODT on W972GG8KS25I is controlled by the ODT pin (ball F9) and programmed via EMR(1). When ODT = HIGH, internal termination resistors (RZQ/4, RZQ/5, or RZQ/6 selectable via EMR(1)) are activated on DQ/DQS lines during read/write operations. Termination values are calibrated using the external RZQ resistor (240 Ω typical) connected to ball L7 (NC).

What is the purpose of the A10 pin during READ/WRITE commands in W972GG8KS25I?

In W972GG8KS25I, the A10 pin serves as the auto-precharge bit during READ and WRITE commands. When A10 = HIGH during command issuance, the memory automatically issues a PRECHARGE command to the accessed bank at burst completion, eliminating software overhead and enabling efficient bank interleaving in high-throughput applications.

Can W972GG8KS25I operate in self-refresh mode at +95°C case temperature?

Yes, W972GG8KS25I supports self-refresh operation up to +95°C case temperature. This requires programming EMR(2) bit A7 = 1 to enable high-temperature self-refresh mode and doubling the auto-refresh frequency (tREFI = 3.9 µS) prior to entry. IDD6 remains ≤ 10 mA under these conditions, maintaining low-power data retention without external refresh controller intervention.