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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W972GG8KS-25 TR

Name: W972GG8KS-25 TR
Brand: Winbond Electronics Corporation
SKU: W972GG8KS-25 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG8KS-25 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W972GG8KS-25 TR.pdf

Description:: IC DRAM 2GBIT 60-WBGA

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Product details

Overview

W972GG8KS-25 TR from Winbond is a 2Gb (256M × 8) DDR2 SDRAM organized as 32M words × 8 banks × 8 bits, compliant with JEDEC DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS Latency 3–7, burst lengths 4/8, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control.

For engineers reviewing the W972GG8KS-25 TR datasheet, W972GG8KS-25 TR pinout, W972GG8KS-25 TR application, or W972GG8KS-25 TR equivalent, this page delivers verified DDR2-800 timing parameters, ball-mapped I/O roles, OCD/ODT configuration details, and JEDEC-compliant initialization sequence requirements - all confirmed against Winbond's official A02 revision datasheet (Feb. 2017).

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. It integrates a DLL for precise DQ–DQS–clock alignment and supports programmable additive latency (AL = 0–2), enabling RL = AL + CL configurations up to 7.

The device features bank-select addressing (BA0–BA2), 15-bit row/column address multiplexing (A0–A14), and dedicated ODT control via a single input pin. Its power management includes precharged/active power-down modes, self-refresh (IDD6 ≤ 10 mA), and burst refresh (IDD5B ≤ 145 mA), all governed by JEDEC-standard command truth tables and timing constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256M × 8), 32M words × 8 banks × 8 bits - defines total addressable capacity and bank-level parallelism.
Data Rate / Speed Grade	DDR2-800 (5-5-5 or 6-6-6), tCK(min) = 2.5 ns - sets maximum clock frequency (400 MHz) and minimum cycle time for timing budgeting.
CAS Latency (CL)	Programmable CL = 3, 4, 5, 6, or 7 - directly determines read access latency in clock cycles; CL=5 yields tRCD ≥ 12.5 ns at DDR2-800.
Supply Voltages	VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - mandates tight regulation and decoupling design; VREF must track VDDQ/2 ± 300 mV.
On-Die Termination	ODT enabled via dedicated ODT pin - provides dynamic, register-controlled termination resistance to suppress signal reflections on DQ/DQS lines.
Burst Length	Configurable BL = 4 or 8 - determines number of data transfers per READ/WRITE command; impacts bus efficiency and tRTP/tRP timing margins.
Power-Down Current	IDD6 ≤ 10 mA (self-refresh, TCASE ≤ 85°C) - specifies lowest sustained current draw during idle, critical for thermal and battery-aware designs.

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 9.5 mm) with 0.8 mm ball pitch. Ball layout optimized for DDR2 routing: differential clocks (CLK/CLK), dual DQS pairs (DQS/DQS and RDQS/RDQS), and isolated VSSQ/VDDL/VSSDL grounds for noise immunity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Input	Multiplexed row/column address bus; A10 controls auto-precharge; A11/A10 configure RDQS/DQS mode in EMR(1).
BA0–BA2	Bank Select	3-bit field selecting one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands.
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; requires matched trace lengths and controlled impedance (SSTL_18).
DQS / DQS	Differential Data Strobe	Source-synchronous strobe for read/write; edge-aligned on reads, center-aligned on writes; enabled via EMR(1)[A10]=0.
ODT	On-Die Termination Control	Active-HIGH input enabling internal termination resistors on DQ/DQS pins - eliminates external termination components.
CS, RAS, CAS, WE	Command Inputs	JEDEC-standard command encoding; all sampled on CLK/CLK crossing - define READ, WRITE, PRECHARGE, REFRESH, etc.
CKE	Clock Enable	Asynchronous enable/disable of internal clock circuitry; LOW forces power-down; HIGH resumes synchronous operation.
VREF	Input Reference Voltage	Reference for all address/control inputs; must be stable at VDDQ/2 ± 300 mV - critical for noise margin and setup/hold compliance.

Key Features

Feature	Design Value
Off-Chip Driver (OCD) Impedance Adjustment	Calibrates output driver strength via EMR(1) to match PCB trace impedance - reduces signal overshoot/undershoot without external resistors.
Posted CAS with Additive Latency	AL = 0–2 programmable; enables command bus efficiency by decoupling column command issuance from data availability - improves bandwidth under burst-heavy loads.
Auto-Precharge Operation	Automatic bank precharge triggered by READ/WRITE with auto-precharge bit (A10); eliminates explicit PRECHARGE command overhead and simplifies controller logic.
Differential Clock & Strobe Interface	CLK/CLK differential pair and DQS/DQS differential strobe ensure robust timing margin and jitter tolerance - essential for reliable 400 MHz DDR2 operation.
Industrial Temperature Support (-25I variant)	While W972GG8KS-25 is rated 0°C–85°C, the -25I variant extends operation to -40°C–95°C with doubled refresh rate (tREFI = 3.9 µS) - validated for extended thermal environments.

Applications

Networking Equipment	Industrial PLCs
Use Scenario: Packet buffering and table lookups in Layer 3 switches and enterprise routers requiring low-latency, burst-capable memory. IC Role / Device Role / Timing Role: Primary DDR2 working memory interfaced to ARM Cortex-A9 or MIPS-based network processors with 16-bit or 32-bit bus width. Use Value: DDR2-800 speed grade and 8-bank architecture enable concurrent access across multiple packet queues, sustaining >3.2 GB/s aggregate bandwidth with CL=5.	Use Scenario: Real-time I/O mapping and ladder logic execution in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Non-volatile program/data storage buffer for microcontroller-based control engines, operating under wide temperature swings and EMI-rich environments. Use Value: On-die termination and OCD calibration maintain signal integrity on long backplane traces; self-refresh mode supports deterministic low-power sleep states during idle cycles.
Medical Imaging Systems	Digital Video Recorders
Use Scenario: Frame buffering for ultrasound and endoscopy video processing units where deterministic latency and data coherency are safety-critical. IC Role / Device Role / Timing Role: Dual-port-accessible memory bank used for ping-pong frame capture and real-time DSP pipeline staging. Use Value: Programmable CAS latency (CL=3–7) and burst interrupt capability allow fine-grained trade-offs between throughput and worst-case latency - meeting IEC 62304 timing constraints.	Use Scenario: High-throughput video stream buffering in multi-channel DVRs handling simultaneous H.264 encode/decode and playback. IC Role / Device Role / Timing Role: Shared memory resource for SoC video accelerators and ARM application cores, accessed via AXI or AHB interconnect. Use Value: Auto-precharge and posted CAS reduce command overhead per burst, increasing effective bandwidth utilization above 85% in sustained 1080p60 write/read workloads.

Networking Equipment

Industrial PLCs

Use Scenario: Packet buffering and table lookups in Layer 3 switches and enterprise routers requiring low-latency, burst-capable memory.

IC Role / Device Role / Timing Role: Primary DDR2 working memory interfaced to ARM Cortex-A9 or MIPS-based network processors with 16-bit or 32-bit bus width.

Use Value: DDR2-800 speed grade and 8-bank architecture enable concurrent access across multiple packet queues, sustaining >3.2 GB/s aggregate bandwidth with CL=5.

Use Scenario: Real-time I/O mapping and ladder logic execution in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Non-volatile program/data storage buffer for microcontroller-based control engines, operating under wide temperature swings and EMI-rich environments.

Use Value: On-die termination and OCD calibration maintain signal integrity on long backplane traces; self-refresh mode supports deterministic low-power sleep states during idle cycles.

Medical Imaging Systems

Digital Video Recorders

Use Scenario: Frame buffering for ultrasound and endoscopy video processing units where deterministic latency and data coherency are safety-critical.

IC Role / Device Role / Timing Role: Dual-port-accessible memory bank used for ping-pong frame capture and real-time DSP pipeline staging.

Use Value: Programmable CAS latency (CL=3–7) and burst interrupt capability allow fine-grained trade-offs between throughput and worst-case latency - meeting IEC 62304 timing constraints.

Use Scenario: High-throughput video stream buffering in multi-channel DVRs handling simultaneous H.264 encode/decode and playback.

IC Role / Device Role / Timing Role: Shared memory resource for SoC video accelerators and ARM application cores, accessed via AXI or AHB interconnect.

Use Value: Auto-precharge and posted CAS reduce command overhead per burst, increasing effective bandwidth utilization above 85% in sustained 1080p60 write/read workloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M8CB-37E:H (Micron)	Same 512M × 8 density, DDR2-800, but uses TSOP-66 package and lacks RDQS support; tRCD = 12.5 ns identical.	Preferred for legacy board upgrades with TSOP footprint; unsuitable for new WBGA layouts or differential RDQS implementations.	Select when replacing existing TSOP-based DDR2 designs and board space allows larger package; verify OCD/ODT register compatibility.
IS42S16160F-6BL (ISSI)	16-bit × 64M organization (1 Gb total), DDR2-667 only (tCK = 3 ns), no EMR(3) support, and fixed CL=3/4/5 only.	Suitable for cost-sensitive, lower-bandwidth applications; not drop-in for W972GG8KS-25's 8-bit × 256M layout or DDR2-800 timing.	Choose only if system bandwidth demand ≤ 2.66 GB/s and PCB layout accommodates different ball count (60 vs. 66) and address mapping.

Compared with MT47H64M8CB-37E:H and IS42S16160F-6BL, W972GG8KS-25 TR offers superior layout flexibility via WBGA-60, full DDR2-800 compliance with CL=3–7, and integrated RDQS/DQS dual-strobe support - making it optimal for new industrial and networking designs prioritizing signal integrity and density.

Availability

W972GG8KS-25 TR is available at Aetrix Electronics and suitable for networking equipment, industrial PLCs, medical imaging systems, and digital video recorders requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2-800 performance.

Supply support for W972GG8KS-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W972GG8KS series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for reliability in extended temperature environments and compatibility with legacy x86, ARM, and MIPS-based memory controllers.

FAQ

What is the maximum operating frequency of the W972GG8KS-25 TR?

The W972GG8KS-25 TR is rated for DDR2-800 operation, corresponding to a 400 MHz clock frequency (200 MHz fundamental) with tCK(min) = 2.5 ns. This is validated across CL=5/6 timing bins (5-5-5 or 6-6-6) per JEDEC specification, and confirmed in Winbond's A02 datasheet Section 4 and Table 4.

Does the W972GG8KS-25 TR support differential DQS operation?

Yes, the W972GG8KS-25 TR supports differential DQS/DQS strobes, enabled by setting EMR(1)[A10] = 0. When active, DQS/DQS operate edge-aligned on reads and center-aligned on writes. Ball assignments are fixed: H7/K2 for DQS/DQS, and A2/A8 for optional RDQS/RDQS (enabled via EMR(1)[A11] = 1).

How is On-Die Termination (ODT) controlled on the W972GG8KS-25 TR?

ODT is controlled by a dedicated ODT input pin (ball F9), which enables internal termination resistors on DQ and DQS lines when driven HIGH. The termination value is set via EMR(1) register bits and is independent of external resistors - a key feature confirmed in Section 6 (Ball Description) and Section 8.2.4 of the datasheet.

What is the required power-up initialization sequence for the W972GG8KS-25 TR?

The W972GG8KS-25 TR requires a strict 13-step JEDEC-compliant initialization: stable power ramp (≤200 ms), 200 µs clock stabilization, CKE assertion, PRECHARGE ALL, EMRS to EMR(2)/EMR(3), DLL enable/reset, OCD calibration, and ≥2 AUTO REFRESH commands - fully detailed in Section 8.1 and Figure 1 of the datasheet.

Is the W972GG8KS-25 TR pin-compatible with other Winbond DDR2 SDRAMs like the W972GG6KB?

No, the W972GG8KS-25 TR is not pin-compatible with W972GG6KB. While both are WBGA-60 DDR2 devices, W972GG6KB is a 1Gb (128M × 8) part with different ball assignments (e.g., BA2 on K7 vs. L7 in W972GG8KS), distinct VDDL/VSSDL placement, and incompatible mode register definitions - confirmed by comparing Sections 5 and 6 of their respective datasheets.

W972GG8KS-25 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: -

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-WBGA (8x9.5)

W972GG8KS-25 TR FAQ

1.How can I place an order for W972GG8KS-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8KS-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8KS-25 TR reliable?

The price and inventory of W972GG8KS-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8KS-25 TR is usually 5 days.

3.What payment methods are accepted for W972GG8KS-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8KS-25 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG8KS-25 TR?

W972GG8KS-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8KS-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8KS-25 TR?

For technical support, including W972GG8KS-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8KS-25 TR requirements.

6.How does Aetrix verify that W972GG8KS-25 TR is sourced from the original manufacturer or authorized distributors?

All W972GG8KS-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8KS-25 TR meets industry standards.

7.What is the process for return or replacement of W972GG8KS-25 TR?

All W972GG8KS-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8KS-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8KS-25 TR part is unused and in its original packaging.

Return procedure for W972GG8KS-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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