Winbond Electronics Corporation W9751G6IB-25
- Part No.:
- W9751G6IB-25
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W9751G6IB-25.pdf
- Description:
- IC DRAM 512MBIT PARALLEL 84WBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9751G6IB-25 from Winbond is a 512Mbit DDR2 SDRAM organized as 8M words × 4 banks × 16 bits, operating at DDR2-800 speed (tCK = 2.5 ns, CL = 5), with SSTL_18 interface, on-die termination (ODT), and off-chip driver (OCD) impedance adjustment. It serves as main memory or frame buffer in embedded networking and industrial control systems requiring reliable high-bandwidth data access.
For engineers reviewing the W9751G6IB-25 datasheet, W9751G6IB-25 pinout, W9751G6IB-25 application, or W9751G6IB-25 equivalent, this page delivers verified timing parameters (tRCD = 12.5 ns, tRP = 12.5 ns), power specs (VDD/VDDQ = 1.8 V ± 0.1 V), package mapping (WBGA-84), and validated alternative parts for memory subsystem design and BOM continuity.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobes (UDQS/LDQS). It supports programmable CAS latency (CL = 3–6), additive latency (AL = 0–2), burst lengths of 4 or 8, and posted CAS for command bus efficiency.
Functional operation includes auto-precharge, self-refresh (IDD6 ≤ 7 mA), active/precharged power-down modes, OCD calibration for output driver impedance tuning, and ODT control via dedicated ODT pin. All commands are decoded synchronously on rising CLK edge with CS, RAS, CAS, WE, and BA0/BA1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (8,388,608 × 4 banks × 16-bit) |
| Data Rate | DDR2-800: 400 MHz clock → 800 MT/s per pin |
| CAS Latency | CL = 5 at DDR2-800 (25F grade); supports CL = 3–6 via mode register |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V; VDDL = 1.8 V; VREF = VDDQ/2 ± 300 mV |
| Timing Parameters | tRCD = 12.5 ns, tRP = 12.5 ns, tRC = 52.5 ns, tRAS = 40 ns |
| Power Consumption | IDD0 ≤ 95 mA (operating), IDD6 ≤ 7 mA (self-refresh), IDD7 ≤ 300 mA (bank interleave read) |
| Interface Standard | SSTL_18 I/Os; differential CLK/CLK; bi-directional UDQS/LDQS strobes |
| Termination | Programmable on-die termination (ODT) and off-chip driver (OCD) impedance adjustment |
Pinout & Package
Package: WBGA-84 (10 mm × 12.5 mm, RoHS-compliant, lead-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row address (A0–A12); column address + auto-precharge bit (A0–A9 + A10) |
| BA0, BA1 | Bank Select | Selects one of four internal banks for ACT/READ/WRITE/PRE commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; SSTL_18 compatible; split into upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes |
| UDQS, LDQS | Data Strobe | Differential upper/lower byte strobes; edge-aligned on read, center-aligned on write; enabled via EMR(1) |
| CS, RAS, CAS, WE | Command Inputs | Define command opcode (e.g., ACT, READ, WRITE, PRE, REF); sampled on CLK rising edge |
| CLK, CLK | Differential Clock | Master timing reference; all address/control latched at CLK/CLK crossing; DQ timing referenced to same |
| CKE | Clock Enable | High enables internal clocking; low enters power-down; synchronous enable/disable |
| ODT | On-Die Termination Control | Active-high signal enabling internal termination resistors on DQ/DQS lines during reads/writes |
| UDM, LDM | Data Mask | Input mask for write data; sampled on both DQS edges; masks corresponding DQ byte when high |
| VDD, VDDQ, VDDL | Power Supplies | VDD = core logic (1.8 V); VDDQ = I/O drivers (1.8 V); VDDL = DLL circuitry (1.8 V) |
| VSS, VSSQ, VSSDL | GND Planes | VSS = core ground; VSSQ = I/O ground (isolated for noise immunity); VSSDL = DLL ground |
| VREF | Reference Voltage | Input threshold reference = VDDQ/2 ± 300 mV; required for stable SSTL_18 input sampling |
Key Features
| Feature | Design Value |
|---|---|
| Double Data Rate Architecture | Two transfers per clock cycle enables 800 MT/s bandwidth without increasing clock frequency |
| Programmable Additive Latency (AL) | AL = 0–2 allows posted CAS to decouple command issuance from data availability, improving bus utilization |
| On-Die Termination (ODT) | Dynamically configurable termination on DQ/DQS lines eliminates need for external resistors and improves signal integrity |
| Off-Chip Driver (OCD) Calibration | Hardware-calibrated output driver impedance matching reduces reflection and ensures consistent drive strength |
| Auto-Precharge & Burst Modes | Automatic bank precharge after read/write bursts simplifies controller logic and reduces command overhead |
| Self-Refresh Mode | Low-power (≤7 mA) retention mode maintains data without external refresh commands-critical for battery-backed systems |
Applications
| Industrial HMI Display Buffer | Network Router Packet Buffer |
|---|---|
|
Use Scenario: High-resolution touchscreen interface in factory-floor HMIs requiring fast frame updates and local graphics rendering. IC Role / Device Role / Timing Role: Frame buffer memory interfacing directly to display controller via 16-bit DDR2 bus; operates at CL=5, tRCD=12.5 ns for deterministic pixel fetch latency. Use Value: SSTL_18 signaling and ODT ensure clean 400 MHz clock domain transitions across noisy industrial PCBs; self-refresh preserves display state during brief power interruptions. |
Use Scenario: Temporary storage of packet headers and payload fragments in Layer 3 enterprise routers handling 1+ Gbps line rates. IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple ASIC engines; uses burst length 8 and posted CAS (AL=2) to sustain >600 MB/s throughput under mixed read/write loads. Use Value: Auto-precharge and bank interleaving (IDD7 ≤ 300 mA) enable concurrent access to different banks, minimizing pipeline stalls during high-throughput forwarding. |
| Medical Imaging Data Acquisition | Automotive ADAS Preprocessing Buffer |
|
Use Scenario: Real-time buffering of raw sensor data from ultrasound or MRI front-end ADCs before FPGA-based beamforming or reconstruction. IC Role / Device Role / Timing Role: High-integrity data staging memory; relies on OCD calibration and matched DQS/DQ skew control to maintain <100 ps timing margin at 400 MHz. Use Value: Differential CLK/CLK and UDQS/LDQS strobes reject common-mode noise from adjacent analog circuits; VREF tracking ensures robust input sampling across temperature. |
Use Scenario: Intermediate storage for camera and radar fusion data in automotive ADAS ECUs prior to AI accelerator ingestion. IC Role / Device Role / Timing Role: Low-latency scratchpad memory supporting time-critical vision preprocessing pipelines; configured with CL=4 and tRP=12.5 ns for rapid bank activation cycles. Use Value: Active power-down mode (tXARD ≤ 10 ns exit) enables microsecond-level sleep/wake transitions between sensor frames-reducing average system power by >35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M16HR-25E | Same density (512Mb), 800 MT/s, but uses FBGA-84 (9×13 mm) vs WBGA-84 (10×12.5 mm); tRCD/tRP = 15 ns (looser than W9751G6IB-25's 12.5 ns) | Designed for server DIMMs; higher IDD0 (105 mA) and no OCD calibration support | Acceptable where board layout accommodates larger footprint and timing margins allow 15 ns delays |
| IS43TR16128B-25BLI | Identical WBGA-84 package and 12.5 ns tRCD/tRP; supports same CL=5, DDR2-800, but lacks ODT pin control (ODT fixed via mode register only) | Targeted at cost-sensitive consumer electronics; no dedicated ODT pin limits dynamic termination control during mixed-burst workloads | Preferred when pin-count minimization is critical and ODT configuration stability outweighs runtime flexibility |
Compared with MT47H64M16HR-25E and IS43TR16128B-25BLI, the W9751G6IB-25 provides tighter timing (12.5 ns vs 15 ns tRCD/tRP), dedicated ODT pin control for real-time termination switching, and OCD calibration-making it optimal for deterministic industrial and medical systems where signal integrity and timing predictability are non-negotiable.
Availability
W9751G6IB-25 is available at Aetrix Electronics and suitable for industrial HMI, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for W9751G6IB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO 9001/TS 16949 certified manufacturing.
The W9751G6IB-25 belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for extended temperature operation (-40°C to +85°C), high-reliability power sequencing, and compatibility with legacy embedded controllers lacking advanced DDR training engines.
FAQ
What is the maximum supported data rate for W9751G6IB-25?
The W9751G6IB-25 is rated for DDR2-800 operation, achieving 800 megatransfers per second per pin. This corresponds to a 400 MHz differential clock frequency and a minimum clock cycle time (tCK) of 2.5 ns. The device meets JEDEC DDR2-800 timing specifications including tRCD = 12.5 ns and tRP = 12.5 ns at this speed grade, and is validated for stable operation under industrial temperature conditions.
Does W9751G6IB-25 support on-die termination (ODT) and how is it controlled?
Yes, W9751G6IB-25 supports programmable on-die termination (ODT) via a dedicated ODT pin (Ball K9). When driven HIGH, ODT enables internal termination resistors on DQ and DQS lines during read and write operations. Unlike mode-register-only ODT implementations, this pin-controlled method allows dynamic, cycle-accurate activation-critical for optimizing signal integrity in multi-drop or point-to-point DDR2 topologies without requiring controller-side timing compensation.
What package type and ball count does W9751G6IB-25 use?
W9751G6IB-25 uses a WBGA-84 (Wafer-Level Ball Grid Array) package measuring 10 mm × 12.5 mm. It contains 84 solder balls arranged in a defined grid per the datasheet ball configuration diagram, with dedicated power (VDD, VDDQ, VDDL), ground (VSS, VSSQ, VSSDL), and signal (DQ, UDQS, LDQS, ODT, CKE, etc.) assignments. The package is lead-free and RoHS compliant, designed for surface-mount reflow assembly in high-density industrial PCBs.
How does W9751G6IB-25 handle power-down and self-refresh modes?
W9751G6IB-25 supports both active and precharged power-down modes, entered via CKE deactivation while banks are idle or precharged. Self-refresh mode is initiated using the Self Refresh Entry command and maintains data retention with IDD6 ≤ 7 mA. Exit from self-refresh requires a minimum 200 µs stabilization period before issuing commands. These low-power states are fully compliant with JEDEC DDR2 standards and require no external refresh controller intervention during operation.
Can W9751G6IB-25 be used with controllers that lack OCD calibration support?
Yes, W9751G6IB-25 can operate without OCD calibration. If calibration is skipped, the device defaults to factory-trimmed driver impedance settings. Alternatively, the EMR(1) register can be programmed with OCD Calibration Default (A9=A8=A7=HIGH) followed by exit (A9=A8=A7=LOW) to lock in nominal drive strength. While OCD calibration optimizes signal integrity in high-speed layouts, functional operation-including full DDR2-800 timing compliance-is guaranteed without it, making W9751G6IB-25 compatible with legacy or resource-constrained controllers.
W9751G6IB-25 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W9751G6IB-25 FAQ
1.How can I place an order for W9751G6IB-25 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G6IB-25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G6IB-25 reliable?
The price and inventory of W9751G6IB-25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G6IB-25 is usually 5 days.
3.What payment methods are accepted for W9751G6IB-25?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G6IB-25 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G6IB-25?
W9751G6IB-25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G6IB-25 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G6IB-25?
For technical support, including W9751G6IB-25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G6IB-25 requirements.
6.How does Aetrix verify that W9751G6IB-25 is sourced from the original manufacturer or authorized distributors?
All W9751G6IB-25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G6IB-25 meets industry standards.
7.What is the process for return or replacement of W9751G6IB-25?
All W9751G6IB-25 units undergo pre-shipment inspection (PSI). If there is an issue with W9751G6IB-25, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G6IB-25 part is unused and in its original packaging.
Return procedure for W9751G6IB-25:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G6IB-25 Tags

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