Winbond Electronics Corporation W9751G6KB-18

Overview

W9751G6KB-18 from Winbond Electronics is a 512Mbit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 16 bits, operating at 1.8 V ± 0.1 V with DDR2-1066 (7-7-7) timing and CAS latency options of 3–7. It supports differential clocking (CLK/CLK), bi-directional DQS strobes, and on-die termination for high-speed memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W9751G6KB-18 datasheet, W9751G6KB-18 pinout, W9751G6KB-18 application, or W9751G6KB-18 equivalent, key selection criteria include its -18 speed grade compliance with JEDEC DDR2-1066, 84-ball WBGA package, SSTL_18 interface, and support for OCD calibration, auto-precharge, and self-refresh modes across 0°C to 85°C operation.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture with two data transfers per clock cycle, using DLL-aligned DQ/DQS timing and edge-aligned read / center-aligned write data strobes. Its command interface accepts active, read, write, precharge, refresh, and power-down commands synchronized to differential CLK/CLK edges.

The device integrates four independent 128Mbit banks with shared address/control bus, supports burst lengths of 4 or 8, and features programmable additive latency (AL = 0–2), enabling RL = AL + CL configurations up to RL = 9. On-die termination (ODT) and off-chip driver (OCD) impedance adjustment are controlled via extended mode registers EMR(1) and EMR(2).

Key Specifications

Pinout & Package

W9751G6KB-18 is packaged in an 84-ball WBGA (8 mm × 12.5 mm, RoHS-compliant, lead-free) with separate VDD/VDDQ/VDDL supplies and isolated VSSQ/VSSDL grounds for noise immunity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M16HR-37E and IS42S16100E-6BLI, the W9751G6KB-18 delivers higher bandwidth (1066 MT/s), finer-grained ODT control via dedicated pin, and OCD calibration for stable drive strength-critical for high-speed, multi-load DDR2 channels.

Availability

W9751G6KB-18 is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant DDR2-1066 performance.

Supply support for W9751G6KB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.

The W9751G6KB-18 belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability memory subsystems in resource-constrained embedded systems requiring JEDEC-compliant DDR2 operation at extended temperature ranges.

FAQ

What is the maximum data rate supported by the W9751G6KB-18?

The W9751G6KB-18 supports DDR2-1066 operation with a maximum data rate of 1066 Mb/sec/pin, corresponding to a minimum clock period (tCK) of 1.875 ns at CAS Latency 7. This speed grade is validated across 0°C to 85°C case temperature and complies fully with JEDEC DDR2 specification 7-7-7 timing parameters.

Does the W9751G6KB-18 support on-die termination (ODT) and how is it controlled?

Yes, the W9751G6KB-18 supports on-die termination (ODT) controlled via both a dedicated ODT pin and extended mode register EMR(1). When the ODT pin is asserted HIGH, internal termination resistors are enabled; EMR(1) allows fine-grained configuration of ODT resistance values (75 Ω, 150 Ω, or off) for optimal signal integrity across varying load conditions.

What package type and ball count does the W9751G6KB-18 use?

The W9751G6KB-18 uses an 84-ball WBGA package measuring 8 mm × 12.5 mm with RoHS-compliant, lead-free construction. Ball layout follows JEDEC MO-270AB standard, featuring separate VDDQ/VSSQ planes, isolated DLL power/ground (VDDL/VSSDL), and dedicated DQS strobe pairs for upper and lower data bytes.

Can the W9751G6KB-18 operate in self-refresh mode and what is its typical current draw?

Yes, the W9751G6KB-18 supports self-refresh mode for low-power retention. At case temperatures ≤ 85°C, its maximum self-refresh current (IDD6) is 6 mA. At 85°C < TCASE ≤ 95°C, IDD6 remains ≤ 6 mA when configured with doubled refresh rate (tREFI = 3.9 µS) via EMR(2) bit A7.

How is burst length and burst type configured on the W9751G6KB-18?

Burst length (BL = 4 or 8) and burst type (sequential or interleaved) are programmed via the Mode Register Set (MRS) command using address bits A0–A2. The W9751G6KB-18 does not support on-the-fly burst length change; configuration is static after initialization and applies globally across all banks and operations.