Winbond Electronics Corporation W9751G6KB-18 TR

Overview

W9751G6KB-18 TR from Winbond is a 512Mb (8M × 4 banks × 16-bit) DDR2 SDRAM operating at DDR2-1066 speed (7-7-7 timing), with 1.8V VDD/VDDQ supply, CAS latency 3–7, and burst lengths of 4 or 8. It supports on-die termination (ODT), off-chip driver (OCD) impedance tuning, and auto-precharge for embedded networking and industrial control memory subsystems.

For engineers reviewing the W9751G6KB-18 TR datasheet, W9751G6KB-18 TR pinout, W9751G6KB-18 TR application, or W9751G6KB-18 TR equivalent, key selection criteria include DDR2-1066 timing compliance, WBGA-84 ball mapping, SSTL_18 interface compatibility, and industrial-grade thermal support up to 85°C case temperature.

Technical Context

This DDR2 SDRAM uses differential clock inputs (CLK/CLK) synchronized to command/address latching and source-synchronous DQS/DQS strobes aligned edge-to-read and center-to-write data. Its DLL aligns DQ and DQS transitions to clock edges, enabling precise timing at 533 MHz (tCK = 1.875 ns min at CL=7).

Functional operation includes programmable additive latency (AL=0–2), write latency = read latency −1, OCD calibration for output driver impedance matching, and ODT configurable per bank via EMR(1). The device implements precharged and active power-down modes, self-refresh at ≤85°C, and tREFI = 7.8 µS at standard temperature.

Key Specifications

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-84 (8 mm × 12.5 mm) with isolated VSSQ/VDDQ planes for noise immunity and dedicated DLL power (VDDL) and ground (VSSDL).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M16HR-37E:H and IS42S16100E-6BLI, the W9751G6KB-18 TR delivers higher bandwidth (1066 Mb/sec/pin vs. 800/667), integrated OCD calibration for robust signal integrity, and full differential DQS support - making it optimal for new designs targeting 533 MHz operation with tight timing closure.

Availability

W9751G6KB-18 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant DDR2-1066 performance.

Supply support for W9751G6KB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, communications, and consumer markets.

The W9751G6KB series belongs to Winbond's high-reliability DDR2 SDRAM product line, designed specifically for embedded systems demanding JEDEC-compliant timing, extended temperature operation, and advanced signal integrity features like OCD and ODT.

FAQ

What is the maximum operating frequency supported by the W9751G6KB-18 TR?

The W9751G6KB-18 TR supports DDR2-1066 operation with a minimum clock period (tCK) of 1.875 ns, corresponding to a 533 MHz clock frequency. This speed grade is validated for CL=7 timing (7-7-7) and requires stable 1.8V ±0.1V supplies and proper DDR2 layout practices. The W9751G6KB-18 TR achieves this performance while maintaining full JEDEC AC/DC specifications across 0°C to 85°C case temperature.

Does the W9751G6KB-18 TR support on-die termination (ODT) and how is it controlled?

Yes, the W9751G6KB-18 TR supports per-bank on-die termination (ODT) controlled via the ODT pin and extended mode registers. When ODT is asserted HIGH, internal termination resistors are enabled for the selected bank(s), reducing stub reflections and eliminating the need for external termination resistors. ODT configuration is set through EMR(1) and can be dynamically adjusted during operation. The W9751G6KB-18 TR's ODT implementation complies with JEDEC DDR2 standards and supports multiple resistance values depending on EMR settings.

What package type and ball count does the W9751G6KB-18 TR use?

The W9751G6KB-18 TR uses a lead-free, RoHS-compliant WBGA (Wafer-Level Ball Grid Array) package with 84 balls arranged in an 8 mm × 12.5 mm footprint. Pinout follows JEDEC-standard DDR2 ball assignment, including dedicated VDDQ/VSSQ planes, isolated DLL power (VDDL) and ground (VSSDL), and differential clock (CLK/CLK) and data strobe (UDQS/UDQS, LDQS/LDQS) pairs. The WBGA-84 package enables high-density routing and thermal performance suitable for industrial PCBs.

Can the W9751G6KB-18 TR operate in self-refresh mode, and what is its typical current draw?

Yes, the W9751G6KB-18 TR supports self-refresh mode to retain data with minimal power consumption during system idle states. At case temperatures ≤85°C, its maximum self-refresh current (IDD6) is 6 mA. This low-power state is entered via command sequence and maintains full memory contents without external refresh commands. The W9751G6KB-18 TR's self-refresh capability is essential for battery-backed or energy-sensitive applications such as portable medical devices and automotive infotainment systems.

How does the W9751G6KB-18 TR implement off-chip driver (OCD) impedance adjustment?

The W9751G6KB-18 TR implements OCD calibration through a dedicated initialization sequence that measures and tunes output driver impedance to match target PCB trace impedance (typically 40–60 Ω). Calibration is performed using EMR(1) commands and requires external reference resistors. Once calibrated, the W9751G6KB-18 TR maintains matched drive strength across voltage and temperature variations, improving signal fidelity and timing margin - especially critical in high-speed, multi-drop DDR2 memory channels.