Winbond Electronics Corporation W9751G6KB25I
- Part No.:
- W9751G6KB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W9751G6KB25I.pdf
- Description:
- IC DRAM 512MBIT PARALLEL 84WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,571
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Product details
Overview
W9751G6KB25I from Winbond is a 512Mb (8M × 4 banks × 16-bit) DDR2 SDRAM operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8V VDD/VDDQ supply, industrial temperature range (–40°C to +95°C), and on-die termination (ODT) for signal integrity in embedded memory subsystems used in networking routers and industrial HMIs.
For engineers reviewing the W9751G6KB25I datasheet, W9751G6KB25I pinout, W9751G6KB25I application, or W9751G6KB25I equivalent, key selection criteria include its -25I speed grade compliance, 84-ball WBGA package, SSTL_18 interface compatibility, ODT programmability, and support for CAS latencies 3–7 with auto-precharge and self-refresh modes.
Technical Context
This DDR2 SDRAM uses differential clock inputs (CLK/CLK) with command latching at clock crossings and source-synchronous DQS/DQS strobes aligned edge-to-read and center-to-write data. Its DLL aligns DQ and DQS transitions to minimize skew across the data bus.
The device implements four independent banks with bank-select inputs (BA0/BA1), supports posted CAS (AL = 0–2), and provides OCD impedance calibration for off-chip driver tuning. It executes auto-refresh and self-refresh with tREFI as low as 3.9 µS at 85–95°C when A7=1 in EMR(2).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (8,388,608 words × 4 banks × 16 bits) |
| Data Rate | DDR2-800: up to 800 Mb/sec/pin (tCK min = 2.5 ns @ CL=5/6) |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V; VDDL = 1.8 V ± 0.1 V; VSSDL ground dedicated to DLL |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; RL = AL + CL (AL = 0–2) |
| Burst Length | Fixed BL = 4 or 8; write latency = RL − 1 |
| Operating Temp | Industrial grade: –40°C ≤ TCASE ≤ 95°C with doubled refresh at high temp |
| Interface Standard | SSTL_18-compliant inputs/outputs; differential CLK/CLK and DQS/DQS |
| Power Modes | Precharged/Active Power Down, Self Refresh (IDD6 ≤ 6 mA @ ≤85°C) |
Pinout & Package
Package: 84-ball WBGA (8 mm × 12.5 mm), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row address (A0–A12); column address (A0–A9); A10 controls auto-precharge |
| BA0, BA1 | Bank Select | Selects one of four internal banks for activate/read/write/precharge commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; VSSQ-isolated for noise immunity |
| UDQS, LDQS | Differential Data Strobe | Upper (DQ8–DQ15) and lower (DQ0–DQ7) byte strobes; edge-aligned read, center-aligned write |
| ODT | On-Die Termination Control | Registered HIGH enables internal termination resistance; improves signal integrity on stub-loaded buses |
| CKE | Clock Enable | Registered HIGH activates internal clock circuitry; LOW enters power-down states |
| CS, RAS, CAS, WE | Command Inputs | Define all operations (activate, read, write, precharge, refresh) on rising CLK edge |
| CLK, CLK | Differential Clock | Commands sampled at crossing of CLK↑/CLK↓; output timing referenced to both edges |
| VREF | Input Reference Voltage | Reference for SSTL_18 input thresholds; must track VDDQ/2 ±300 mV |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable termination resistance reduces external termination components and improves signal fidelity on high-speed DDR2 buses |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance tuning of DQ outputs via EMR(1) to match trace impedance and minimize reflections |
| Posted CAS with Additive Latency | AL = 0–2 allows pipelined command issuance without bus contention, increasing effective bandwidth in burst-heavy workloads |
| Four-Bank Architecture | Independent bank activation enables interleaved access, hiding tRC delays and sustaining >70% bus utilization |
| Self Refresh at Extended Temperature | Supports tREFI = 3.9 µS (doubled refresh rate) at 85–95°C via EMR(2) bit A7, enabling reliable operation in harsh industrial environments |
Applications
| Networking Router Memory | Industrial HMI Frame Buffer |
|---|---|
Use Scenario: Stores packet buffering and forwarding tables in Layer 3 enterprise routers requiring sustained 800 MT/s throughput under thermal stress. IC Role / Device Role / Timing Role: Primary system memory interfaced to MIPS or ARM-based network processors via 16-bit DDR2 controller. Use Value: Industrial temperature rating (–40°C to +95°C) and self-refresh stability at 95°C ensure uptime in uncooled telecom cabinets. | Use Scenario: Holds GUI frame buffer and application code in ruggedized human-machine interface panels deployed in factory automation. IC Role / Device Role / Timing Role: Offloads graphics processor memory bandwidth; operates with posted CAS and auto-precharge to sustain 64-pixel burst reads. Use Value: On-die termination eliminates need for external 50Ω resistors, reducing BOM cost and PCB area in space-constrained panel designs. |
| Medical Imaging Controller | Energy Metering Gateway |
Use Scenario: Buffers real-time sensor fusion data and DICOM image tiles in portable ultrasound systems with strict EMI limits. IC Role / Device Role / Timing Role: High-reliability memory subsystem using OCD calibration to maintain signal integrity across variable-length flex PCB traces. Use Value: Differential DQS strobes and SSTL_18 interface meet IEC 60601-1 EMC requirements without added shielding or filtering. | Use Scenario: Stores firmware, metering logs, and TLS handshake buffers in DIN-rail-mounted smart grid gateways operating in outdoor enclosures. IC Role / Device Role / Timing Role: Low-power DDR2 memory supporting active power-down during idle periods between GPRS transmissions. Use Value: IDD2P ≤ 8 mA in precharge power-down mode extends battery backup runtime during extended AC outages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M4HQ-25E | 64M × 4 organization (256Mb), same DDR2-800 speed grade, but 60-ball FBGA package and different ball map | Requires PCB redesign due to incompatible footprint and VREF routing; lacks industrial temp option | Choose only if migrating from Micron platform with identical timing margins and layout flexibility |
| IS42S16400F-25BLI | Same 512Mb density and -25I industrial rating, but 60-ball TSOP-II package and no differential DQS support | Suitable for cost-sensitive legacy designs with parallel trace routing; not viable for new high-density BGA layouts | Select when board space permits TSOP-II and system does not require source-synchronous DQS alignment |
Compared with MT47H64M4HQ-25E and IS42S16400F-25BLI, the W9751G6KB25I uniquely combines 84-ball WBGA compactness, differential DQS support, and full OCD/ODT configurability - making it optimal for new industrial designs demanding signal integrity and thermal resilience without footprint compromise.
Availability
W9751G6KB25I is available at Aetrix Electronics and suitable for networking infrastructure, industrial HMI, medical imaging controllers, and smart energy gateways requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9751G6KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and JEDEC-compliant manufacturing.
The W9751G6KB25I belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for reliability in thermally demanding embedded systems where consistent timing, low-power refresh, and signal integrity are critical.
FAQ
What is the maximum supported CAS latency for W9751G6KB25I?
The W9751G6KB25I supports CAS latency (CL) values of 3, 4, 5, 6, and 7. At DDR2-800 speed (–25I grade), CL=5 and CL=6 are the most commonly used settings, with tCK min = 2.5 ns. CL=7 is supported but requires longer tRCD/tRP delays per JEDEC specification and is typically reserved for margin testing or derated operation.
Does W9751G6KB25I support differential DQS operation?
Yes, the W9751G6KB25I supports differential DQS operation via UDQS/UDQS and LDQS/LDQS pins. This mode is enabled by setting A10=1 in the EMR(1) register. When active, both upper and lower byte strobes operate differentially, improving jitter tolerance and signal integrity in high-noise industrial environments.
How is self-refresh configured for high-temperature operation in W9751G6KB25I?
For operation at 85–95°C, the W9751G6KB25I requires tREFI = 3.9 µS (doubled refresh rate). This is enabled by setting bit A7 = 1 in EMR(2) during initialization. The device then enters self-refresh automatically when CKE is held LOW, maintaining data retention with IDD6 ≤ 6 mA even at 95°C case temperature.
What is the purpose of the VSSDL and VDDL pins on W9751G6KB25I?
VSSDL and VDDL are dedicated ground and power supply pins for the internal delay-locked loop (DLL). Isolating the DLL's analog circuitry from core digital and I/O supplies minimizes noise coupling and ensures stable DQ–DQS alignment across voltage and temperature variations - a critical requirement for DDR2 timing compliance.
Can W9751G6KB25I be used in place of a DDR2-1066 part like W9751G6KB18I?
No - the W9751G6KB25I is rated for DDR2-800 (tCK min = 2.5 ns), while the W9751G6KB18I supports DDR2-1066 (tCK min = 1.875 ns). Substituting the -25I for the -18I will violate setup/hold timing in systems designed for 1066 MT/s, causing read/write failures. They share the same package and command set but are not speed-interchangeable.
W9751G6KB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W9751G6KB25I FAQ
1.How can I place an order for W9751G6KB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G6KB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G6KB25I reliable?
The price and inventory of W9751G6KB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G6KB25I is usually 5 days.
3.What payment methods are accepted for W9751G6KB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G6KB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G6KB25I?
W9751G6KB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G6KB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G6KB25I?
For technical support, including W9751G6KB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G6KB25I requirements.
6.How does Aetrix verify that W9751G6KB25I is sourced from the original manufacturer or authorized distributors?
All W9751G6KB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G6KB25I meets industry standards.
7.What is the process for return or replacement of W9751G6KB25I?
All W9751G6KB25I units undergo pre-shipment inspection (PSI). If there is an issue with W9751G6KB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G6KB25I part is unused and in its original packaging.
Return procedure for W9751G6KB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G6KB25I Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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