Winbond Electronics Corporation W9751G6KB25I TR

Overview

W9751G6KB25I TR from Winbond is a 512M-bit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 16 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, CAS latency options of 3–7, and industrial temperature range (−40°C to +95°C). It supports on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded networking and industrial control memory subsystems.

For engineers reviewing the W9751G6KB25I TR datasheet, W9751G6KB25I TR pinout, W9751G6KB25I TR application, or W9751G6KB25I TR equivalent, key selection criteria include DDR2-800 timing compliance, industrial-grade thermal reliability, SSTL_18 interface compatibility, ODT/OCD configurability, and WBGA-84 package integration in space-constrained PCB layouts.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned for reads and center-aligned for writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling precise timing at up to 400 MHz clock frequency (800 MT/s).

Functional operation relies on mode register (MRS) and extended mode register (EMR) programming for CAS latency, additive latency, ODT enable/disable, OCD calibration, and DLL control. Command decoding uses CS, RAS, CAS, WE, and BA0/BA1 to manage bank activation, read/write bursts, precharge, refresh, and power-down modes.

Key Specifications

Pinout & Package

W9751G6KB25I TR uses an 84-ball WBGA package (8 mm × 12.5 mm, RoHS-compliant, lead-free), with separate VDD/VDDQ/VDDL and VSS/VSSQ/VSSDL power/ground domains for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M16HR-25E IT and IS42S16160F-25BLI, W9751G6KB25I TR offers identical DDR2-800 timing and industrial temperature support in a compact WBGA package with full differential DQS and OCD calibration-making it optimal for new space- and signal-integrity-critical designs.

Availability

W9751G6KB25I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9751G6KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W9751G6KB25I TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, thermally robust main memory in resource-constrained embedded systems requiring JEDEC-compliant DDR2 functionality.

FAQ

What is the maximum data rate supported by the W9751G6KB25I TR?

The W9751G6KB25I TR supports DDR2-800 operation, delivering up to 800 megatransfers per second (MT/s) per pin. This corresponds to a 400 MHz differential clock frequency with two data transfers per clock cycle. The device meets JEDEC specification requirements for 5-5-5 and 6-6-6 timing bins under industrial temperature conditions, and its performance is validated with tCK = 2.5 ns minimum at CL = 5.

Does the W9751G6KB25I TR support on-die termination (ODT)?

Yes, the W9751G6KB25I TR supports programmable on-die termination (ODT) via the ODT pin and extended mode registers. When ODT is asserted HIGH, internal termination resistors (typically 75 Ω or 150 Ω, configurable via EMR) are enabled on DQ and DQS lines. This eliminates the need for external parallel termination resistors and improves signal integrity in point-to-point or multi-drop DDR2 topologies.

What package type and ball count does the W9751G6KB25I TR use?

The W9751G6KB25I TR uses an 84-ball fine-pitch wafer-level ball grid array (WBGA) package measuring 8 mm × 12.5 mm. It is lead-free and RoHS-compliant, with dedicated VDDQ/VSSQ planes for I/O power integrity and isolated VDDL/VSSDL for DLL circuitry. Ball layout follows JEDEC MO-245AC standard, and pin functions are fully documented in the official datasheet section "Ball Configuration" and "Ball Description".

How does the W9751G6KB25I TR handle refresh at elevated temperatures?

At case temperatures above 85°C (up to +95°C), the W9751G6KB25I TR requires doubling the refresh frequency-reducing tREFI from 7.8 μs to 3.9 μs-to maintain data retention. This is achieved by setting bit A7 = "1" in Extended Mode Register 2 (EMR(2)) and issuing Auto Refresh commands every 32 ms. The device draws max 6 mA in Self Refresh mode at ≤85°C, and this current remains within spec under the accelerated refresh condition.

Can the W9751G6KB25I TR be used with single-ended DQS instead of differential DQS?

Yes, the W9751G6KB25I TR supports both differential and single-ended DQS operation. Differential mode (using UDQS/UDQS and LDQS/LDQS) is enabled via EMR(1) bit A10; when disabled, single-ended DQS is used for both upper and lower bytes. The device maintains full timing compliance in either mode, though differential operation provides superior noise immunity and timing margin-especially critical in high-density, high-speed PCB layouts.