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Winbond Electronics Corporation W9751G6NB-18

Name: W9751G6NB-18
Brand: Winbond Electronics Corporation
SKU: W9751G6NB-18
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9751G6NB-18

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-VFBGA

Datasheet:: W9751G6NB-18.pdf

Description:: IC DRAM 512MBIT PAR 84VFBGA

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Product details

Overview

W9751G6NB-18 from Winbond is a 512 Mbit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 16 bits, supporting DDR2-1066 (7-7-7) operation at 1.8 V supply, with CAS latency 3–7, burst lengths 4/8, and on-die termination for high-speed memory subsystems in industrial control and networking equipment.

For engineers reviewing the W9751G6NB-18 datasheet, W9751G6NB-18 pinout, W9751G6NB-18 application, or W9751G6NB-18 equivalent, key selection criteria include tRCD = 13.125 ns, tRP = 13.125 ns, tRC = 58.125 ns, ODT support, and VFBGA-84 package compatibility with JEDEC DDR2-1066 timing compliance.

Technical Context

This DDR2 SDRAM implements double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, posted CAS (AL + CL), and source-synchronous data strobes (UDQS/LDQS) edge-aligned on reads and center-aligned on writes.

It supports OCD impedance calibration, programmable ODT activation via dedicated ODT pin, auto-precharge on burst commands, and dual power-down modes (precharged/active) with self-refresh down to 6 mA at ≤85°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	512 Mbit (8M × 4 banks × 16-bit)
Data Rate	DDR2-1066: 1066 Mbps per pin (tCK = 1.875 ns min @ CL=7)
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay after column address
Burst Length	4 or 8 - defines number of consecutive data transfers per READ/WRITE command
Supply Voltage	VDD/VDDQ = 1.8 V ± 0.1 V - requires tight regulation for signal integrity and timing margin
tRCD / tRP	13.125 ns min - critical timing for bank activation and precharge command sequencing
ODT Support	Pin-controlled (ODT ball) - enables dynamic on-die termination for stub-free point-to-point routing
Package	VFBGA-84 (8 mm × 12.5 mm, 1.0 mm height) - RoHS-compliant, lead-free, SSTL_18 I/O interface

Pinout & Package

VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm thickness) with 0.8 mm ball pitch, optimized for high-density PCB layouts and thermal performance in industrial memory modules.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Input	Row/column address bus; A10 controls auto-precharge on READ/WRITE
BA0–BA1	Bank Select	Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; DQ0–DQ7 paired with LDQS, DQ8–DQ15 with UDQS
UDQS / LDQS	Differential Data Strobe	Source-synchronous strobe for upper/lower byte; edge-aligned on reads, center-aligned on writes
ODT	On-Die Termination Control	Active-high register input enabling internal termination resistors for impedance matching
CKE	Clock Enable	Gates internal clock circuitry; LOW disables all operations except self-refresh entry/exit
CS, RAS, CAS, WE	Command Inputs	Encoded with CS to define command type (ACTIVE, READ, WRITE, PRECHARGE, REFRESH, etc.)
CLK / CLK	Differential Clock	Input sampling occurs at crossing of CLK rising and CLK falling edges; drives all synchronous logic
VREF	Input Reference Voltage	Reference for address/control input thresholds; must track VDDQ/2 ± 300 mV
VDD / VDDQ / VDDL	Power Supplies	VDD (core), VDDQ (I/O), VDDL (DLL); all 1.8 V ± 0.1 V; isolated grounds (VSS, VSSQ, VSSDL) reduce noise coupling

Key Features

Feature	Design Value
DDR2-1066 Compliance	Meets JEDEC JESD79-2F specification for 7-7-7 timing (tRCD/tRP/tRAS) at 533 MHz clock
Programmable Additive Latency	AL = 0, 1, or 2 enables posted CAS to decouple command bus utilization from data return timing
OCD Impedance Calibration	Off-chip driver output impedance adjustable via EMR(1) to match trace Z₀ and minimize reflections
Write Data Mask (DM)	LDM/UDM pins allow per-byte masking during WRITE bursts without requiring full bus turnaround
Dual Power-Down Modes	Precharged Power Down (IDD2P ≤ 8 mA) and Active Power Down (IDD3N ≤ 25 mA) reduce idle power in burst-oriented systems
Self-Refresh at High Temp	Supports 3.9 µS refresh interval (doubled rate) up to 105°C case temperature via EMR(2) configuration

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time deterministic data logging and program execution in programmable logic controllers with multi-axis motion control loops. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O mapping; interfaces directly to ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR2 bus. Use Value: DDR2-1066 bandwidth (1.7 GB/s peak) sustains concurrent analog input sampling, EtherCAT frame processing, and HMI rendering without memory bottleneck.	Use Scenario: Layer-2/Layer-3 packet buffering in managed Gigabit Ethernet switches handling >100K PPS line-rate forwarding. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple ASIC ports; operates under strict tRCD/tRP timing constraints for low-latency queue management. Use Value: Programmable CAS latency (CL=3–7) and auto-precharge enable fine-grained timing tuning to match switch fabric arbitration cycles and avoid head-of-line blocking.
Medical Imaging Front-End Buffer	Automotive ADAS Camera Preprocessor
Use Scenario: Temporary storage of raw sensor frames from high-resolution X-ray or ultrasound detectors before FPGA-based beamforming or compression. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing to FPGA DDR2 PHY; relies on burst-length-8 reads/writes and DLL-aligned DQS for jitter-free data capture. Use Value: Differential UDQS/LDQS strobes with center-aligned write timing ensure <±50 ps setup/hold margin for 533 MHz data capture across temperature (-40°C to 85°C).	Use Scenario: Real-time image preprocessing pipeline in surround-view camera ECU, where multiple 1MP sensors feed into TI TDA3x or NXP S32V234 vision processor. IC Role / Device Role / Timing Role: Local frame buffer for ISP pipeline stages (demosaic, noise reduction, HDR merge); operates in self-refresh mode during vehicle sleep states. Use Value: Self-refresh current IDD6 ≤ 6 mA at ≤85°C enables >72-hour battery hold-up without external refresh controller intervention.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time deterministic data logging and program execution in programmable logic controllers with multi-axis motion control loops.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O mapping; interfaces directly to ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR2 bus.

Use Value: DDR2-1066 bandwidth (1.7 GB/s peak) sustains concurrent analog input sampling, EtherCAT frame processing, and HMI rendering without memory bottleneck.

Use Scenario: Layer-2/Layer-3 packet buffering in managed Gigabit Ethernet switches handling >100K PPS line-rate forwarding.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple ASIC ports; operates under strict tRCD/tRP timing constraints for low-latency queue management.

Use Value: Programmable CAS latency (CL=3–7) and auto-precharge enable fine-grained timing tuning to match switch fabric arbitration cycles and avoid head-of-line blocking.

Medical Imaging Front-End Buffer

Automotive ADAS Camera Preprocessor

Use Scenario: Temporary storage of raw sensor frames from high-resolution X-ray or ultrasound detectors before FPGA-based beamforming or compression.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing to FPGA DDR2 PHY; relies on burst-length-8 reads/writes and DLL-aligned DQS for jitter-free data capture.

Use Value: Differential UDQS/LDQS strobes with center-aligned write timing ensure <±50 ps setup/hold margin for 533 MHz data capture across temperature (-40°C to 85°C).

Use Scenario: Real-time image preprocessing pipeline in surround-view camera ECU, where multiple 1MP sensors feed into TI TDA3x or NXP S32V234 vision processor.

IC Role / Device Role / Timing Role: Local frame buffer for ISP pipeline stages (demosaic, noise reduction, HDR merge); operates in self-refresh mode during vehicle sleep states.

Use Value: Self-refresh current IDD6 ≤ 6 mA at ≤85°C enables >72-hour battery hold-up without external refresh controller intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M16HR-37E	64M × 16-bit, DDR2-800 (6-6-6), tRCD/tRP = 12.5 ns, VFBGA-84, same pinout	Lower bandwidth (1.28 GB/s), wider temperature range (-40°C to 105°C) with industrial-grade qualification	Select when system clock is limited to 400 MHz and extended temperature reliability is required over peak speed
IS42S16100E-6BLI	64M × 16-bit, DDR2-667 (5-5-5), tRCD/tRP = 15 ns, VFBGA-84, JEDEC-compliant pinout	Reduced speed grade (667 Mbps), higher tRCD/tRP, lower IDD0 (80 mA) but no ODT pin control	Choose for cost-sensitive designs where DDR2-667 timing margins suffice and ODT is managed externally

Compared with MT47H64M16HR-37E and IS42S16100E-6BLI, W9751G6NB-18 delivers highest sustained bandwidth (1.7 GB/s) and lowest tRCD/tRP (13.125 ns) within the VFBGA-84 footprint, making it optimal for latency-critical industrial and networking applications where DDR2-1066 timing compliance is mandatory.

Availability

W9751G6NB-18 is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging front-ends, and automotive ADAS camera preprocessors requiring stable component supply, long-lifecycle support, and guaranteed DDR2-1066 timing compliance.

Supply support for W9751G6NB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9751G6NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for high-reliability embedded systems requiring extended temperature operation, JEDEC-compliant timing, and robust signal integrity features like OCD and ODT.

FAQ

What is the maximum operating frequency supported by W9751G6NB-18?

W9751G6NB-18 supports DDR2-1066 operation with a minimum clock period (tCK) of 1.875 ns, corresponding to a 533 MHz clock frequency and 1066 Mbps data rate per pin. This speed grade is validated for 0°C ≤ TCASE ≤ 85°C with full JEDEC JESD79-2F AC/DC specifications, including tRCD = 13.125 ns and tRP = 13.125 ns.

Does W9751G6NB-18 support on-die termination (ODT) and how is it controlled?

Yes, W9751G6NB-18 supports on-die termination via the dedicated ODT pin (Ball K9). When driven HIGH, ODT enables internal termination resistors on DQ/DQS lines to match transmission line impedance and suppress reflections. The termination value is configured through Extended Mode Register EMR(1), and activation is synchronous to the clock domain - not level-sensitive.

What package type and ball count does W9751G6NB-18 use?

W9751G6NB-18 uses a VFBGA-84 package measuring 8 mm × 12.5 mm with 1.0 mm height and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, with separate VDD/VDDQ/VDDL supplies and isolated grounds (VSS/VSSQ/VSSDL) to minimize switching noise coupling between core and I/O domains.

Can W9751G6NB-18 operate in self-refresh mode at elevated temperatures?

Yes, W9751G6NB-18 supports self-refresh at up to 105°C case temperature when configured with EMR(2) bit A7 = 1, which doubles the refresh rate to 3.9 µS interval (tREFI). At ≤85°C, standard 7.8 µS refresh is used. Self-refresh current IDD6 is specified ≤6 mA under these conditions, enabling low-power retention during system sleep states.

What are the supported burst lengths and CAS latency settings for W9751G6NB-18?

W9751G6NB-18 supports burst lengths of 4 and 8, selectable via Mode Register. CAS latency is programmable from CL = 3 to CL = 7 in integer steps, with corresponding tCK min values ranging from 5 ns (CL=3) to 1.875 ns (CL=7). Additive latency (AL = 0, 1, or 2) is also configurable to enable posted CAS for improved command bus efficiency.

W9751G6NB-18 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-VFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 512Mbit

Memory Organization:: 32M x 16

Memory Interface:: Parallel

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-VFBGA (8x12.5)

W9751G6NB-18 FAQ

1.How can I place an order for W9751G6NB-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9751G6NB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9751G6NB-18 reliable?

The price and inventory of W9751G6NB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G6NB-18 is usually 5 days.

3.What payment methods are accepted for W9751G6NB-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G6NB-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9751G6NB-18?

W9751G6NB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9751G6NB-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9751G6NB-18?

For technical support, including W9751G6NB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G6NB-18 requirements.

6.How does Aetrix verify that W9751G6NB-18 is sourced from the original manufacturer or authorized distributors?

All W9751G6NB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G6NB-18 meets industry standards.

7.What is the process for return or replacement of W9751G6NB-18?

All W9751G6NB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W9751G6NB-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9751G6NB-18 part is unused and in its original packaging.

Return procedure for W9751G6NB-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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