Winbond Electronics Corporation W9751G6NB-18 TR

Overview

W9751G6NB-18 TR from Winbond is a 512M-bit DDR2 SDRAM organized as 8M × 4 banks × 16-bit, compliant with DDR2-1066 (7-7-7) timing, operating at 1.8 V ± 0.1 V, and rated for 0°C ≤ T_CASE ≤ 85°C. It supports CAS latency 3–7, burst lengths 4/8, and features on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and differential clock inputs for high-speed memory subsystems in embedded controllers and industrial SoC platforms.

For engineers reviewing the W9751G6NB-18 TR datasheet, W9751G6NB-18 TR pinout, W9751G6NB-18 TR application, or W9751G6NB-18 TR equivalent, key selection criteria include DDR2-1066 timing compliance, VFBGA-84 package compatibility, SSTL_18 interface support, ODT/OCD configurability, and industrial-grade thermal margin for sustained burst read/write operations in resource-constrained systems.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 533 MHz operation (t_CK = 1.875 ns min at CL=7).

The device integrates four independent banks, supports posted CAS with programmable additive latency (AL=0–2), and provides auto-precharge, self-refresh, and power-down modes. Command decoding uses RAS/CAS/WE/CS with bank address BA0–BA1 and row/column address A0–A12 (A10 controls auto-precharge), all latched on CLK/CLK crossings.

Key Specifications

Pinout & Package

VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm thickness) with 0.8 mm ball pitch, RoHS-compliant lead-free solder balls. Ball layout follows JEDEC MO-245 standard with dedicated VDDQ/VSSQ planes for DQ noise isolation and separate VDDL/VSSDL for DLL power integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M16HR-37E:H and IS42S16160F-6BLI, the W9751G6NB-18 TR delivers 33% higher bandwidth, integrated impedance tuning for cleaner signal eyes, and JEDEC-compliant DDR2-1066 timing-making it the optimal choice for new designs targeting >500 MHz memory clocks and compact, high-density layouts.

Availability

W9751G6NB-18 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging subsystems, and automotive ADAS camera modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for W9751G6NB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with ISO 9001/14001 certification and global manufacturing facilities.

The W9751G6NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for embedded systems demanding high reliability, extended temperature operation, and JEDEC-compliant timing at 533 MHz clock speeds.

FAQ

What is the maximum data rate supported by the W9751G6NB-18 TR?

The W9751G6NB-18 TR supports DDR2-1066 operation with a maximum data rate of 1066 Mbps, achieved at a 533 MHz clock frequency (t_CK = 1.875 ns minimum at CL=7). This rating is validated across the full 0°C to 85°C case temperature range per JEDEC JESD79-2F, and the W9751G6NB-18 TR maintains all AC/DC specifications without derating at its rated speed grade.

Does the W9751G6NB-18 TR support on-die termination (ODT) and how is it controlled?

Yes, the W9751G6NB-18 TR supports programmable on-die termination (ODT) with selectable Rtt values of 75 Ω or 150 Ω. ODT is enabled by driving the ODT pin HIGH during active commands; its state is registered synchronously with CLK/CLK. The W9751G6NB-18 TR also supports dynamic ODT mode switching during power-down entry/exit, as defined in JEDEC timing diagrams 11.3–11.5.

What package type and ball count does the W9751G6NB-18 TR use?

The W9751G6NB-18 TR uses a VFBGA-84 package measuring 8 mm × 12.5 mm with 1.0 mm height and 0.8 mm ball pitch. It conforms to JEDEC MO-245 and features RoHS-compliant lead-free solder balls. Pinout is fully documented in Section 5 (Ball Configuration) and Section 6 (Ball Description) of the official Winbond datasheet for the W9751G6NB-18 TR.

Can the W9751G6NB-18 TR operate in self-refresh mode at elevated temperatures?

Yes, the W9751G6NB-18 TR supports self-refresh mode up to 95°C case temperature when configured via Extended Mode Register EMR(2) bit A7=1, which doubles the refresh rate (tREFI = 3.9 µs). While the -18 speed grade is specified for 0°C–85°C, this configuration extends reliable operation into the 85°C–95°C range-verified in Winbond's characterization reports for the W9751G6NB-18 TR.

What is the function of the A10 pin during read and write commands for the W9751G6NB-18 TR?

For the W9751G6NB-18 TR, the A10 pin serves as the auto-precharge enable bit during READ and WRITE commands. When A10 is HIGH during command issuance, the device automatically executes a PRECHARGE command to the accessed bank after burst completion-eliminating the need for explicit precharge commands and improving memory controller efficiency in sequential access patterns.