Winbond Electronics Corporation W9751G6NB25I TR
- Part No.:
- W9751G6NB25I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-VFBGA
- Datasheet:
-
W9751G6NB25I TR.pdf
- Description:
- IC DRAM 512MBIT PAR 84VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,606
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W9751G6NB25I TR from Winbond is a 512 Mbit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 16 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at up to 400 MHz clock frequency with CL=5/6, tRCD/tRP ≥12.5 ns, and industrial temperature range (−40°C to +95°C). It delivers 1.6 Gbps data rate per pin using SSTL_18 interface, integrated ODT and OCD calibration, and is used in embedded networking, industrial HMIs, and legacy SoC memory subsystems.
For engineers reviewing the W9751G6NB25I TR datasheet, W9751G6NB25I TR pinout, W9751G6NB25I TR application, or W9751G6NB25I TR equivalent, key selection criteria include verified DDR2-800 timing compliance, VDD/VDDQ = 1.8 V ±0.1 V operation, 84-ball VFBGA (8×12.5 mm, 1.0 mm height) package compatibility, and support for auto-precharge, self-refresh, and differential DQS strobes.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data capture. It supports programmable CAS latency (CL=3–7), additive latency (AL=0–2), burst lengths of 4 or 8, and posted CAS for improved command bus efficiency.
Functional control includes on-die termination (ODT) enabled via dedicated ODT pin, off-chip driver impedance adjustment (OCD) calibrated through EMR(1), and bank-select addressing via BA0/BA1. The device integrates four independent 128-Mbit banks with shared address/command bus and separate DQ/DQS lanes per byte group (DQ0–7/LDQS, DQ8–15/UDQS).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (8M × 4 banks × 16-bit) |
| Data Rate | 800 Mbps per pin (DDR2-800, 400 MHz clock) |
| CAS Latency | Programmable CL=5 or CL=6 - determines minimum read access delay after column address |
| tRCD / tRP | ≥12.5 ns - minimum delay between ACTIVE and READ/WRITE or PRECHARGE commands |
| Supply Voltage | VDD = VDDQ = 1.8 V ± 0.1 V - strict rail tolerance required for signal integrity and JEDEC compliance |
| Operating Temperature | −40°C to +95°C - qualified for industrial environments without derating |
| Package | VFBGA-84 (8 mm × 12.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Interface Standard | SSTL_18 - defines input thresholds, drive strength, and termination requirements |
Pinout & Package
VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm thickness), RoHS-compliant, lead-free construction with isolated VSSQ/VDDL/VSSDL grounds for noise suppression and signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 controls auto-precharge on read/write |
| BA0, BA1 | Bank Select | Selects one of four internal banks for ACTIVE/READ/WRITE/PRECHARGE |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit data bus; split into lower (DQ0–7) and upper (DQ8–15) bytes |
| LDQS, LDQS | Lower-Byte Differential Strobe | Source-synchronous edge-aligned read / center-aligned write strobe for DQ0–7 |
| UDQS, UDQS | Upper-Byte Differential Strobe | Source-synchronous edge-aligned read / center-aligned write strobe for DQ8–15 |
| ODT | On-Die Termination Control | Active-HIGH enables internal termination resistors (75 Ω or 150 Ω) on DQ/DQS lines |
| CKE | Clock Enable | Gates internal clocking; LOW forces power-down modes (precharged/active) |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus (e.g., CS+RAS+CAS+WE = PRECHARGE ALL) |
| CLK, CLK | Differential Clock Input | Sampling edge defined by crossing of CLK rising and CLK falling; all commands latched here |
| VREF | Input Reference Voltage | Reference for address/control input thresholds; must track VDDQ/2 ±300 mV |
| VDD, VDDQ, VDDL | Power Supplies | VDD/VDDQ = 1.8 V ±0.1 V core/I/O; VDDL = 1.8 V ±0.1 V for DLL circuitry |
| VSS, VSSQ, VSSDL | Ground Planes | Separate analog/digital/power grounds reduce crosstalk and improve timing margin |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination on DQ/DQS pins reduces external component count and improves signal integrity |
| Off-Chip Driver (OCD) Calibration | EMR(1)-based impedance tuning ensures precise output drive strength matching across voltage/temperature |
| Auto-Precharge | Automatic bank precharge triggered by burst read/write with auto-precharge bit - eliminates explicit PRECHARGE command overhead |
| Self-Refresh Mode | Autonomous refresh during CKE-low; IDD6 ≤ 6 mA at TCASE ≤ 85°C - enables low-power standby in battery-backed systems |
| Differential DQS Strobes | Separate LDQS/UDQS pairs per byte lane enable robust source-synchronous timing with <10 ps skew tolerance |
| Industrial Temp Grade | Rated −40°C to +95°C with full AC/DC specification compliance - no derating required for extended thermal environments |
Applications
| Industrial HMI Controllers | Legacy Networking Switches |
|---|---|
Use Scenario: Touch-enabled panel PCs and programmable logic controllers requiring deterministic memory response under thermal stress. IC Role / Device Role / Timing Role: Primary system memory interfaced to ARM9/ARM11 SoCs with synchronous DDR2 controller, providing 16-bit wide data path and burst-8 reads for GUI frame buffers. Use Value: Stable operation at −40°C to +95°C avoids thermal throttling; ODT and OCD ensure signal integrity across long PCB traces in DIN-rail mounted enclosures. |
Use Scenario: Layer 2 Ethernet switches with legacy MIPS-based packet processors needing cost-optimized, JEDEC-compliant DDR2 memory. IC Role / Device Role / Timing Role: External program/data memory for switch fabric ASICs, supporting burst-4 writes for packet descriptor tables and burst-8 reads for forwarding lookups. Use Value: DDR2-800 (5-5-5) timing meets throughput requirements for 100 Mbps switching; VFBGA-84 footprint allows high-density routing on 4-layer backplanes. |
| Medical Diagnostic Terminals | Automated Test Equipment (ATE) |
Use Scenario: Portable ultrasound and ECG analyzers where memory reliability must be maintained during repeated thermal cycling. IC Role / Device Role / Timing Role: Frame buffer and acquisition memory for FPGA-based image pipelines, operating in conjunction with dual-channel DDR2 controllers. Use Value: Self-refresh current ≤6 mA extends battery life during idle; industrial temp rating eliminates need for active cooling in sealed chassis. |
Use Scenario: Benchtop test instruments requiring deterministic memory access for real-time waveform capture and pattern generation. IC Role / Device Role / Timing Role: High-speed acquisition buffer for ADC/DAC co-processors, leveraging posted CAS and AL=1 to minimize command bus contention during burst transfers. Use Value: CL=5/6 and tRCD/tRP=12.5 ns guarantee sub-30 ns read latency; differential DQS strobes suppress jitter in mixed-signal PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M16HR-25E IT:J | 64M × 16-bit, DDR2-800, same VDD/VDDQ, but 96-ball FBGA (11×13 mm); higher IDD0 (110 mA vs. 90 mA) | Requires PCB redesign due to larger footprint and different ball map; better suited for new designs with space margin | Select if migrating to newer Micron platform with extended lifecycle support and broader speed bin availability |
| IS42S16160F-6BLI | 64M × 16-bit, DDR2-667 only (CL=5, tRCD/tRP=15 ns); same 84-ball VFBGA; lower max frequency limits bandwidth | Compatible pinout but cannot meet DDR2-800 timing - suitable only for cost-sensitive, lower-throughput upgrades | Select only when existing design operates below 400 MHz and requires lowest-cost drop-in replacement with identical mechanical fit |
Compared with MT47H64M16HR-25E IT:J and IS42S16160F-6BLI, the W9751G6NB25I TR offers optimal balance of industrial temperature support, DDR2-800 performance, and 84-ball VFBGA compatibility - enabling direct replacement in legacy Winbond-based designs without layout change or timing revalidation.
Availability
W9751G6NB25I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, legacy networking switches, and medical diagnostic terminals requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for W9751G6NB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash storage, and microcontrollers, with over 30 years of DRAM design heritage and JEDEC-compliant product validation.
The W9751G6NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for long-lifecycle deployment in embedded systems where thermal robustness, JEDEC compliance, and supply chain stability are critical.
FAQ
What is the maximum supported data rate for W9751G6NB25I TR?
The W9751G6NB25I TR supports DDR2-800 operation at 400 MHz clock frequency, delivering 800 Mbps per data pin. This is confirmed by its -25I speed grade designation and compliance with JEDEC DDR2-800 (5-5-5 or 6-6-6) timing specifications. The device achieves this rate using SSTL_18 signaling and DLL-aligned DQ/DQS timing, with CL=5 or CL=6 programmable via mode register.
Does W9751G6NB25I TR support differential DQS strobes?
Yes, W9751G6NB25I TR supports differential DQS strobes via LDQS/LDQS and UDQS/UDQS pins. These are enabled through EMR(1) configuration and provide source-synchronous, edge-aligned read and center-aligned write timing for DQ0–7 and DQ8–15 respectively - improving timing margin and reducing skew in high-speed layouts.
What is the operating temperature range of W9751G6NB25I TR?
W9751G6NB25I TR is rated for industrial operation from −40°C to +95°C, with full AC and DC parameter compliance across this range. This is specified in the order information table and validated by doubled auto-refresh rate (tREFI = 3.9 µS) and EMR(2) A7=1 configuration at high temperature - distinguishing it from commercial-grade -25 variants.
Can W9751G6NB25I TR be used as a direct replacement for W9751G6NB-25?
W9751G6NB25I TR is functionally and electrically identical to W9751G6NB-25 except for extended temperature qualification. Both share identical pinout, timing parameters, and electrical specs at 0°C to +85°C. However, W9751G6NB25I TR adds guaranteed operation up to +95°C with full JEDEC compliance - making it a drop-in upgrade for thermal-critical applications.
What package type does W9751G6NB25I TR use?
W9751G6NB25I TR uses an 84-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 12.5 mm with 1.0 mm height. It is RoHS-compliant and lead-free, with separate VSSQ, VSSDL, and VSS grounds to isolate I/O noise from core logic - as documented in the package specification and ball configuration diagrams.
W9751G6NB25I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-VFBGA (8x12.5)
W9751G6NB25I TR FAQ
1.How can I place an order for W9751G6NB25I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G6NB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G6NB25I TR reliable?
The price and inventory of W9751G6NB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G6NB25I TR is usually 5 days.
3.What payment methods are accepted for W9751G6NB25I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G6NB25I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G6NB25I TR?
W9751G6NB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G6NB25I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G6NB25I TR?
For technical support, including W9751G6NB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G6NB25I TR requirements.
6.How does Aetrix verify that W9751G6NB25I TR is sourced from the original manufacturer or authorized distributors?
All W9751G6NB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G6NB25I TR meets industry standards.
7.What is the process for return or replacement of W9751G6NB25I TR?
All W9751G6NB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W9751G6NB25I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G6NB25I TR part is unused and in its original packaging.
Return procedure for W9751G6NB25I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G6NB25I TR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

