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Winbond Electronics Corporation W9751G6NB-25 TR

Part No.:
W9751G6NB-25 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
84-VFBGA
Datasheet:
AetrixW9751G6NB-25 TR.pdf
Description:
IC DRAM 512MBIT PAR 84VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,478

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Product details

Overview

W9751G6NB-25 TR from Winbond is a 512Mbit (8M × 4 banks × 16-bit) DDR2 SDRAM compliant with JEDEC DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, supporting CAS Latency 3–7 and burst lengths of 4/8 for embedded memory subsystems in industrial control and networking equipment.

For engineers reviewing the W9751G6NB-25 TR datasheet, W9751G6NB-25 TR pinout, W9751G6NB-25 TR application, or W9751G6NB-25 TR equivalent, this page delivers verified DDR2-800 timing parameters, VFBGA-84 ball mapping, OCD/ODT configuration support, and validated industrial-grade alternatives for stable memory design-in.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous data strobes (UDQS/LDQS). It supports posted CAS (AL = 0–2), programmable ODT termination per bank, and OCD impedance calibration for signal integrity optimization on high-speed PCB layouts.

Functional operation includes auto-precharge, self-refresh, and power-down modes (precharged/active), with command decoding governed by CS/RAS/CAS/WE and bank addressing via BA0–BA1. Refresh intervals are temperature-compensated (tREFI = 7.8 µs at ≤85°C; 3.9 µs at 95–105°C), and write latency is fixed as WL = RL − 1.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density512 Mbit (8,388,608 words × 4 banks × 16 bits)
Data RateDDR2-800: 400 MHz clock → 800 Mbps transfer rate
CAS LatencyProgrammable CL = 3, 4, 5, 6, or 7; determines minimum read access delay after column address
Burst LengthConfigurable BL = 4 or 8; defines number of consecutive data transfers per read/write command
Supply VoltageVDD/VDDQ = 1.8 V ± 0.1 V; strict tolerance required for SSTL_18 I/O compliance
Operating Temp0°C ≤ TCASE ≤ 85°C (commercial grade); full JEDEC AC/DC specs guaranteed
PackageVFBGA-84 (8 mm × 12.5 mm, 1.0 mm height); RoHS-compliant, lead-free

Pinout & Package

VFBGA-84 package with 8×12.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball layout optimized for DDR2 signal integrity with dedicated VSSQ/VDDQ planes, isolated DLL power/ground (VDDL/VSSDL), and differential clock (CLK/CLK) and data strobe (UDQS/UDQS, LDQS/LDQS) pairs.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address InputRow/column address bus; A10 controls auto-precharge enable during read/write
BA0–BA1Bank SelectSelects one of four internal banks for active/read/write/precharge commands
DQ0–DQ15Data I/O16-bit bidirectional data bus; SSTL_18 compatible, referenced to VREF
UDQS / LDQSDifferential Data StrobeSource-synchronous strobes for upper/lower byte; edge-aligned on read, center-aligned on write
CS, RAS, CAS, WECommand InputsEncoded command bus; all sampled on CLK/CLK crossing with CS enabling rank selection
ODTOn-Die Termination ControlActive-HIGH signal enabling internal termination resistors per bank to reduce stub reflections
CKEClock EnableGates internal clocking; LOW disables DLL and enters power-down states
VREFInput Reference VoltageMid-supply reference (VDDQ/2 ± 300 mV) for SSTL_18 input threshold stability

Key Features

FeatureDesign Value
On-Die Termination (ODT)Per-bank programmable termination resistance reduces signal reflection without external resistors
Off-Chip Driver (OCD) CalibrationDynamic impedance tuning of DQ outputs matches trace impedance for improved eye margin
Posted CAS with Additive LatencyAL = 0–2 decouples command bus occupancy from data return, increasing bus efficiency
DLL-aligned DQ/DQS TimingDigital delay lock loop ensures zero-skew alignment between data and strobe edges across process/voltage/temp
Temperature-Compensated RefreshtREFI halves to 3.9 µS above 85°C, ensuring data retention without firmware intervention

Applications

Industrial PLC Memory BufferNetwork Switch Packet Buffer

Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic cycle times.

IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution and fieldbus protocol stacks.

Use Value: DDR2-800 bandwidth and low-latency CL=3/4 operation meet sub-millisecond scan cycle requirements while supporting extended temperature operation.

Use Scenario: Temporary storage of Ethernet frames during line-rate forwarding in Layer 2 switches.

IC Role / Device Role / Timing Role: High-throughput packet buffer interfacing directly to MAC controllers via 16-bit DDR2 bus.

Use Value: Burst length 8 and auto-precharge minimize command overhead, sustaining >600 MB/s sustained throughput under back-to-back frame load.

Medical Imaging Front-End BufferVideo Surveillance Encoder Frame Store

Use Scenario: Intermediate storage of digitized ultrasound or X-ray sensor data before compression and transmission.

IC Role / Device Role / Timing Role: Low-power, high-reliability frame buffer with ECC-capable controller interface.

Use Value: Precharged power-down mode reduces IDD2P to 8 mA during idle periods between image acquisitions, extending system thermal margin.

Use Scenario: Dual-frame buffering for H.264 encoding pipelines in multi-channel DVR systems.

IC Role / Device Role / Timing Role: Shared memory resource for video input capture and encoded stream output.

Use Value: On-die termination and OCD calibration maintain signal integrity across long traces to FPGA-based encoder cores, reducing bit error rates at 400 MHz clock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT47H64M16HR-25EMicron DDR2-800, same density/package, but requires VDD/VDDQ tracking within 50 mV (tighter than W9751G6NB-25 TR's 300 mV spec)Validated in telecom baseband designs; higher IDD0 (110 mA vs. 90 mA) increases thermal loadPrefer when existing Micron validation exists; verify power rail sequencing against tighter tracking requirement
IS42S16400F-25BLIISSI DDR2-800, identical VFBGA-84 pinout and CL3–7 support, but lacks EMR(3) register and has fixed tRCD/tRP = 12.5 ns minCommon in cost-sensitive consumer electronics; no high-temp (105°C) variant availableSelect for commercial-temp designs where simplified register set and lower BOM cost outweigh missing EMR(3) features

Compared with MT47H64M16HR-25E and IS42S16400F-25BLI, the W9751G6NB-25 TR offers broader voltage tolerance, full EMR register support for advanced signal integrity tuning, and industrial temperature variants-making it optimal for ruggedized embedded systems requiring long-term supply stability and layout flexibility.

Availability

W9751G6NB-25 TR is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging front-ends, and video surveillance encoders requiring stable component supply across extended product lifecycles.

Supply support for W9751G6NB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W9751G6NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for reliable operation in harsh environments including factory automation, transportation infrastructure, and medical diagnostics equipment.

FAQ

What is the maximum supported CAS Latency for W9751G6NB-25 TR?

The W9751G6NB-25 TR supports programmable CAS Latency values of 3, 4, 5, 6, and 7. At DDR2-800 speed grade (-25), CL=3 and CL=4 are most commonly used to balance timing margin and performance. CL=5–7 are enabled for systems requiring relaxed setup/hold windows or operating under marginal signal integrity conditions. All CL settings are fully JEDEC-compliant and validated across the 0°C to 85°C temperature range.

Does W9751G6NB-25 TR support differential DQS operation?

Yes, the W9751G6NB-25 TR supports differential data strobe operation via UDQS/UDQS and LDQS/LDQS pairs. This mode is enabled by setting bit A10 in the Extended Mode Register 1 (EMR1) using an EMRS command. When enabled, both upper and lower byte strobes operate differentially, improving noise immunity and timing margin compared to single-ended mode-critical for high-density routing in industrial PCBs.

What is the purpose of the VSSDL and VDDL pins on W9751G6NB-25 TR?

VSSDL and VDDL are dedicated ground and power supply pins for the internal DLL (Delay Lock Loop) circuitry in the W9751G6NB-25 TR. Isolating DLL power/ground minimizes switching noise coupling into the timing path, ensuring stable DQ/DQS alignment across voltage and temperature. These pins must be decoupled with low-ESR capacitors close to the package and tied to the same 1.8 V supply as VDD/VDDQ, but routed on separate plane segments per Winbond layout guidelines.

Can W9751G6NB-25 TR operate at 105°C case temperature?

No, the W9751G6NB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C only. For operation up to 105°C, Winbond offers the W9751G6NB-25J variant, which uses the same -25 speed grade but adds extended temperature qualification, doubled refresh rate (tREFI = 3.9 µs), and EMR2 configuration for high-temp self-refresh entry. The standard W9751G6NB-25 TR does not guarantee functionality or reliability beyond 85°C and must not be deployed in such environments.

How is On-Die Termination (ODT) controlled on W9751G6NB-25 TR?

ODT on the W9751G6NB-25 TR is controlled via the dedicated ODT pin (Ball K9), which must be driven HIGH to enable termination resistance on the DQ/DQS lines for the currently active bank. Termination value is configured through Extended Mode Register 1 (EMR1) bits A1–A0. ODT remains active only during reads/writes to the selected bank and automatically disables during precharge or idle states-reducing power consumption while maintaining signal integrity during active bursts.

W9751G6NB-25 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
84-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
512Mbit
Memory Organization:
32M x 16
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
57.5 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
84-VFBGA (8x12.5)

W9751G6NB-25 TR FAQ

1.How can I place an order for W9751G6NB-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9751G6NB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9751G6NB-25 TR reliable?

The price and inventory of W9751G6NB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G6NB-25 TR is usually 5 days.

3.What payment methods are accepted for W9751G6NB-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G6NB-25 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9751G6NB-25 TR?

W9751G6NB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9751G6NB-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9751G6NB-25 TR?

For technical support, including W9751G6NB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G6NB-25 TR requirements.

6.How does Aetrix verify that W9751G6NB-25 TR is sourced from the original manufacturer or authorized distributors?

All W9751G6NB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G6NB-25 TR meets industry standards.

7.What is the process for return or replacement of W9751G6NB-25 TR?

All W9751G6NB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9751G6NB-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9751G6NB-25 TR part is unused and in its original packaging.

Return procedure for W9751G6NB-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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