Winbond Electronics Corporation W9751G8KB25I TR
- Part No.:
- W9751G8KB25I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W9751G8KB25I TR.pdf
- Description:
- IC DRAM 512MBIT PARALLEL 60WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,422
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Product details
Overview
W9751G8KB25I TR from Winbond is a 512 Mbit DDR2 SDRAM organized as 16M × 4 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, industrial temperature range (–40°C to +95°C), and WBGA-60 package. It serves as main system memory in embedded controllers, network processors, and industrial HMIs requiring reliable high-bandwidth data buffering.
For engineers reviewing the W9751G8KB25I TR datasheet, W9751G8KB25I TR pinout, W9751G8KB25I TR application, or W9751G8KB25I TR equivalent, key selection criteria include CAS latency support (CL=3–7), on-die termination (ODT) programmability, OCD impedance calibration, differential clock interface (CLK/CLK), and industrial-grade thermal stability.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 400 MHz operation (200 MHz clock, 400 MT/s per pin).
It supports programmable additive latency (AL=0–2), auto-precharge, burst lengths of 4 or 8, and multiple power management modes including precharged power down and self-refresh. ODT and OCD are controlled via extended mode registers (EMR1–EMR3), allowing dynamic signal integrity tuning without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (16,777,216 words × 4 banks × 8 bits) |
| Data Rate | 800 MT/s per pin (DDR2-800, tCK min = 2.5 ns at CL=5) |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for signal integrity and timing compliance |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay in clock cycles |
| Burst Length | 4 or 8 - defines number of consecutive data transfers per read/write command |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without derating |
| Interface Standard | SSTL_18 - mandates compatible 1.8 V I/O drivers and termination on controller side |
Pinout & Package
W9751G8KB25I TR uses a 60-ball WBGA package (8 mm × 12.5 mm, RoHS-compliant, lead-free). Ball pitch is 0.8 mm; balls are arranged in an 8×8 grid with corner omissions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bus; A10 controls auto-precharge enable during read/write commands |
| BA0–BA1 | Bank Select | Selects one of four internal banks for active, read, write, or precharge operations |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; shares pins for input and output, requiring direction control via controller |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data |
| CLK / CLK | Differential Clock | Primary timing reference; all commands latched at crossing of CLK rising and CLK falling edges |
| CS, RAS, CAS, WE | Command Inputs | Define instruction set (e.g., activate, read, write, precharge); decoded together with BA0/BA1 |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors (75 Ω or 150 Ω) to reduce stub reflections |
| DM/RDQS | Data Mask or Read Strobe | Input mask for write data when enabled; outputs RDQS only if EMR1[A11]=1 and differential mode enabled |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0, 1, or 2 enables pipelined command issuance without sacrificing bus efficiency |
| Off-Chip Driver (OCD) Calibration | Adjusts output driver impedance to match PCB trace Z₀, reducing overshoot/undershoot and improving eye margin |
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination activated per-command, eliminating need for external parallel resistors |
| Self-Refresh Mode | Autonomous refresh at <6 mA current draw (TCASE ≤ 85°C), preserving data during host sleep states |
| Posted CAS Architecture | Decouples column command from row activation, enabling higher command bandwidth and reduced command bus contention |
Applications
| Industrial HMI Memory Buffer | Network Processor Main Memory |
|---|---|
Use Scenario: Touch-enabled factory-floor HMIs running real-time Linux with graphics overlays and local data logging. IC Role / Device Role / Timing Role: Primary working memory for CPU and GPU subsystems, handling concurrent display frame buffers and control task stacks. Use Value: Industrial temperature rating (–40°C to +95°C) ensures uninterrupted operation in unconditioned enclosures; ODT+OCD support maintains signal integrity across long traces on multi-layer panels. | Use Scenario: Layer-3 switches with integrated packet classification engines requiring low-latency memory access for forwarding tables and buffer queues. IC Role / Device Role / Timing Role: Shared system memory for traffic management ASICs and ARM-based control plane processors. Use Value: DDR2-800 speed (400 MHz effective) delivers sufficient bandwidth for 1 Gbps line-rate packet buffering; posted CAS and AL support hide latency during burst-intensive lookups. |
| Medical Imaging Controller RAM | Automated Test Equipment (ATE) Data Capture |
Use Scenario: Portable ultrasound units capturing and preprocessing real-time B-mode image streams before compression and storage. IC Role / Device Role / Timing Role: Frame buffer and intermediate processing memory for FPGA-accelerated beamforming pipelines. Use Value: Burst length 8 and CL=5 configuration enables full-line pixel transfers with minimal command overhead; self-refresh mode preserves image buffers during standby between scans. | Use Scenario: High-speed digital pattern generators capturing multi-channel logic analyzer waveforms at 200+ MHz sampling rates. IC Role / Device Role / Timing Role: Circular buffer memory for real-time waveform capture, continuously overwritten until trigger event. Use Value: Auto-precharge and write data mask (DM) allow efficient partial-word updates without read-modify-write cycles; industrial temp grade tolerates heat buildup inside sealed test racks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M4HQ-25E IT:J | 64M × 4 organization (256 Mbit), same DDR2-800 speed grade, but 84-ball FBGA package and Micron-specific register map | Requires PCB redesign due to different ball count, layout, and ODT initialization sequence | Choose when migrating to higher density or needing Micron's extended reliability qualification (IT grade) |
| IS42S16400F-25BLI | 16M × 16 organization (256 Mbit), identical WBGA-60 package and pinout, but only supports CL=4/5/6 and lacks OCD calibration | Drop-in replacement for footprint and basic timing, but no OCD tuning for marginal layouts | Choose for cost-sensitive designs where signal integrity margins are sufficient without OCD adjustment |
Compared with W9751G8KB25I TR, MT47H64M4HQ-25E IT:J offers higher density but demands board rework, while IS42S16400F-25BLI matches the WBGA-60 footprint and industrial temp but omits OCD calibration-making W9751G8KB25I TR the only option supporting both industrial operation and on-the-fly driver impedance tuning.
Availability
W9751G8KB25I TR is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9751G8KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.
The W9751G8KB series targets cost-sensitive, thermally demanding embedded systems requiring DDR2 compatibility, industrial qualification, and robust signal integrity features like OCD and ODT-without migrating to DDR3 complexity or cost.
FAQ
What is the maximum supported CAS latency for W9751G8KB25I TR?
W9751G8KB25I TR supports programmable CAS latency values of CL = 3, 4, 5, 6, and 7. At its rated DDR2-800 speed grade (tCK min = 2.5 ns), CL = 5 is the default and most commonly used setting, delivering optimal balance between access latency and timing margin. CL = 3 is supported only at reduced frequencies, while CL = 7 extends setup/hold windows for marginal layouts or high-noise environments. All values are configured via the Mode Register Set (MRS) command during initialization.
Does W9751G8KB25I TR support differential DQS operation?
Yes, W9751G8KB25I TR supports differential DQS operation using DQS and DQS pins. This mode is enabled by setting EMR(1)[A10] = 0 during extended mode register programming. When active, DQS functions as a true differential strobe aligned with data, improving noise immunity and timing margin. If single-ended mode is selected (EMR(1)[A10] = 1), DQS remains functional but DQS becomes NC, and ball A2 (NU/RDQS) is unused. The W9751G8KB25I TR datasheet confirms this behavior in Section 6 (Ball Description) and Section 8.2.2.1.
What is the purpose of the DM/RDQS pin on W9751G8KB25I TR?
The DM/RDQS pin on W9751G8KB25I TR serves dual functions: as Data Mask (DM) during write operations and as Read Data Strobe (RDQS) during reads-depending on EMR configuration. When EMR(1)[A11] = 0, it operates as DM: sampled on both DQS edges to mask corresponding DQ bits during writes. When EMR(1)[A11] = 1 and differential strobe mode is enabled, it outputs RDQS synchronized with read data. The pin's loading matches DQ/DQS for consistent signal integrity. This flexibility allows W9751G8KB25I TR to support both standard and enhanced DDR2 timing protocols.
How does OCD calibration work on W9751G8KB25I TR?
OCD calibration on W9751G8KB25I TR adjusts the output driver impedance of DQ and DQS pins to match the PCB's characteristic impedance (typically 50 Ω single-ended or 100 Ω differential). It is initiated after power-up and DLL enable via EMR(1) commands, using internal reference resistors. The process measures voltage ratios and programs trim codes into the OCD register, achieving ±10 % accuracy. Calibration must complete before normal operation begins-typically within 200 clock cycles-and can be repeated dynamically. This feature directly improves signal eye opening and reduces termination dependency on external resistors.
Is W9751G8KB25I TR pin-compatible with other Winbond DDR2 parts like W9751G8KB-25?
Yes, W9751G8KB25I TR is pin-compatible with W9751G8KB-25, sharing identical WBGA-60 package, ball map, and electrical interface. The sole difference is temperature qualification: W9751G8KB25I TR is specified for –40°C to +95°C (industrial grade), while W9751G8KB-25 is rated for 0°C to +85°C (commercial grade). Both use the same speed bin (DDR2-800, 5-5-5/6-6-6), command set, and initialization flow. No PCB or firmware changes are required when substituting W9751G8KB25I TR for W9751G8KB-25 in thermally demanding applications.
W9751G8KB25I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W9751G8KB25I TR FAQ
1.How can I place an order for W9751G8KB25I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G8KB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G8KB25I TR reliable?
The price and inventory of W9751G8KB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G8KB25I TR is usually 5 days.
3.What payment methods are accepted for W9751G8KB25I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G8KB25I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G8KB25I TR?
W9751G8KB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G8KB25I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G8KB25I TR?
For technical support, including W9751G8KB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G8KB25I TR requirements.
6.How does Aetrix verify that W9751G8KB25I TR is sourced from the original manufacturer or authorized distributors?
All W9751G8KB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G8KB25I TR meets industry standards.
7.What is the process for return or replacement of W9751G8KB25I TR?
All W9751G8KB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W9751G8KB25I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G8KB25I TR part is unused and in its original packaging.
Return procedure for W9751G8KB25I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G8KB25I TR Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
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