Winbond Electronics Corporation W9751G8KB-25 TR
- Part No.:
- W9751G8KB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W9751G8KB-25 TR.pdf
- Description:
- IC DRAM 512MBIT PARALLEL 60WBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9751G8KB-25 TR from Winbond Electronics is a 512M-bit DDR2 SDRAM organized as 16M words × 4 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, CAS latency 3–7, and burst lengths of 4 or 8. It supports on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded computing and industrial control memory subsystems.
For engineers reviewing the W9751G8KB-25 TR datasheet, W9751G8KB-25 TR pinout, W9751G8KB-25 TR application, or W9751G8KB-25 TR equivalent, key selection criteria include tRCD/tRP = 12.5 ns minimum, IDD4R ≤ 85 mA, SSTL_18 interface compliance, WBGA-60 package compatibility, and industrial-grade thermal margin support when paired with -25I variant.
Technical Context
This DDR2 SDRAM uses differential clock inputs (CLK/CLK) with input sampling at clock crossings, and source-synchronous I/O referenced to DQS/DQS or RDQS in differential mode. Its DLL aligns DQ and DQS transitions to the clock, enabling precise timing at 250 MHz (DDR2-800) operation.
Command decoding relies on CS, RAS, CAS, and WE synchronized to CLK edges; read/write operations support posted CAS (AL = 0–2), write latency = RL − 1, and seamless burst interrupt. ODT and OCD are programmable via extended mode registers EMR(1)–EMR(3), with configuration persistence across power-down modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (16M × 4 banks × 8 bits); enables 64 MB byte-addressable capacity in standard x8 configuration. |
| Data Rate | DDR2-800 (400 MHz clock, 800 MT/s per pin); supports sustained bandwidth up to 6.4 GB/s in 16-bit bus configurations. |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; determines minimum clock cycles between column address and first data output (e.g., CL=5 → tAA = 12.5 ns @ 250 MHz). |
| Burst Length | Fixed BL = 4 or 8; defines number of consecutive data transfers per read/write command, directly impacting bus efficiency and prefetch utilization. |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V; strict tolerance ensures stable core and I/O operation while meeting JEDEC SSTL_18 signaling requirements. |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C; validated for commercial temperature range; distinct from industrial -25I variant rated to 95°C. |
| tRCD / tRP | 12.5 ns minimum; defines shortest interval between ACTIVE and READ/WRITE or PRECHARGE commands, constraining row cycle timing. |
| IDD4R Max | 85 mA; peak current during burst read, critical for power delivery design and thermal management in dense PCB layouts. |
Pinout & Package
Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm) with 0.8 mm ball pitch. Ball layout optimized for signal integrity: isolated VSSQ planes for DQ noise immunity, dedicated VDDL/VSSDL for DLL power/ground, and differential clock (CLK/CLK) and strobe (DQS/DQS) pairs placed adjacent to minimize skew.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bus; A10 controls auto-precharge; A12/A13 support extended addressing for bank and mode register access. |
| BA0–BA1 | Bank Select | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE; also selects MR/EMR register during MRS/EMRS cycles. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; SSTL_18 compatible; driven/received synchronously with DQS/DQS edge- or center-aligned per operation. |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe for read (edge-aligned) and write (center-aligned); enabled only when EMR(1)[A10] = 0. |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus; all sampled on CLK/CLK crossing; CS enables rank selection in multi-Rank systems. |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors (75 Ω or 150 Ω) on DQ/DQS lines to suppress reflections during reads/writes. |
| CKE | Clock Enable | Gates internal clock distribution; LOW disables DLL and enters power-down; HIGH resumes synchronous operation after stabilization delay. |
| VREF | Input Reference Voltage | Provides threshold reference for address/control inputs; must track VDDQ/2 ±300 mV for valid logic level recognition. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0–2 enables posted CAS, decoupling command issuance from data availability to improve command bus utilization by up to 30% in burst-heavy workloads. |
| Off-Chip Driver (OCD) Calibration | Performs impedance matching of DQ output drivers to external trace Z₀ (typically 50 Ω), reducing signal overshoot/undershoot and enabling reliable 800 MT/s operation on lossy PCBs. |
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination on DQ/DQS pins eliminates need for discrete parallel terminators, saving board space and improving signal fidelity in point-to-point or stub-based topologies. |
| Auto-Precharge | Automatically issues PRECHARGE command at burst end (controlled by A10), eliminating software overhead and guaranteeing bank readiness for subsequent accesses without timing violation risk. |
| DLL-Driven Timing Alignment | Digital Delay Lock Loop dynamically adjusts DQ–DQS phase alignment to compensate for process/voltage/temperature drift, maintaining setup/hold margins across full operating range. |
| Power-Down Modes | Supports both precharged and active power-down states with CKE gating; reduces IDD6 to 6 mA in self-refresh, enabling <100 µW standby power in battery-backed systems. |
Applications
| Industrial HMI Controllers | Network Router Data Buffers |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with dual-display outputs and local storage caching. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A8/A9 SoC, buffering frame buffers, firmware stacks, and protocol translation tables. Use Value: DDR2-800 bandwidth sustains 1080p UI refresh at 60 Hz while CL=5/BL=8 minimizes latency jitter in deterministic task scheduling. | Use Scenario: Packet buffering in Layer 3 enterprise routers handling 1–10 Gbps aggregate traffic with deep queueing and QoS tagging. IC Role / Device Role / Timing Role: Shared packet buffer memory for ASIC-based forwarding engines, supporting concurrent ingress/egress DMA channels. Use Value: Auto-precharge and posted CAS reduce command bus contention, enabling >95% bus utilization under sustained 100% line-rate traffic with minimal packet drop. |
| Medical Imaging Front-Ends | Automotive ADAS Video Preprocessing |
Use Scenario: Real-time DICOM image reconstruction pipeline in portable ultrasound units with FPGA-accelerated beamforming. IC Role / Device Role / Timing Role: Frame store for raw RF echo data and intermediate processing buffers for FFT and filtering kernels. Use Value: OCD calibration ensures clean 250 MHz DQ eye diagrams despite noisy mixed-signal PCB environments, preserving SNR in 12-bit ADC data paths. | Use Scenario: Camera sensor aggregation and temporal noise reduction in surround-view systems using TI TDA3x SoC. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for real-time motion estimation and disparity map generation. Use Value: tRCD = 12.5 ns and tRP = 12.5 ns enable sub-50 ns bank activation cycles, critical for meeting 30 FPS stereo processing deadlines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M8CB-3−AAT:C | 64M × 8 organization (512 Mbit), same DDR2-800 speed grade, but uses TSOP-66 package and requires different PCB layout; no WBGA-60 footprint compatibility. | Targeted for legacy industrial motherboards with through-hole or wide-pitch surface-mount constraints; lacks OCD calibration and has higher IDD4R (95 mA). | Select when upgrading from older Micron DDR2 designs and board rework for WBGA is not feasible. |
| IS42S16160F-3BL | 16M × 16 organization (256 Mbit), half the density; supports identical DDR2-800 timing but only CL=3–5; no EMR(3) support or RDQS capability. | Suitable for cost-sensitive consumer electronics where memory bandwidth >3.2 GB/s is unnecessary and smaller footprint is prioritized over capacity. | Choose only if system design can accommodate reduced density and does not require ODT fine-tuning or differential RDQS strobes. |
Compared with MT47H64M8CB-3−AAT:C and IS42S16160F-3BL, W9751G8KB-25 TR delivers higher density in compact WBGA-60, integrated OCD/ODT tuning for signal integrity on high-speed layouts, and broader CAS latency flexibility-making it optimal for new industrial and automotive designs requiring robust DDR2 migration paths.
Availability
W9751G8KB-25 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network router data buffers, medical imaging front-ends, and automotive ADAS video preprocessing requiring stable component supply across extended product lifecycles.
Supply support for W9751G8KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W9751G8KB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, thermally robust memory expansion in resource-constrained embedded systems requiring JEDEC-compliant DDR2 interoperability.
FAQ
What is the maximum operating frequency supported by the W9751G8KB-25 TR?
The W9751G8KB-25 TR is rated for DDR2-800 operation, meaning it supports a 400 MHz data transfer rate (200 MHz clock frequency) with tCK(min) = 2.5 ns at CL=5/6. It is not rated for DDR2-1066 speeds; that capability applies only to the -18 speed grade variant of the same family.
Does the W9751G8KB-25 TR support on-die termination (ODT) and how is it controlled?
Yes, the W9751G8KB-25 TR supports programmable ODT via EMR(1). ODT is enabled by asserting the ODT pin HIGH and configuring termination resistance (75 Ω or 150 Ω) through EMR(1) bits A1–A0. The feature is fully functional across all supported speed grades and temperature ranges.
What package type and ball count does the W9751G8KB-25 TR use?
The W9751G8KB-25 TR uses a lead-free, RoHS-compliant WBGA-60 package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. Pinout matches the full W9751G8KB family, including dedicated VDDL/VSSDL for DLL power integrity and isolated VSSQ planes for DQ noise suppression.
Can the W9751G8KB-25 TR operate in industrial temperature range?
No - the W9751G8KB-25 TR is specified for 0°C ≤ TCASE ≤ 85°C (commercial grade). For industrial operation up to 95°C, the W9751G8KB-25I variant must be used; it shares identical electrical specs and pinout but undergoes extended temperature screening and qualification.
How is OCD calibration performed on the W9751G8KB-25 TR during initialization?
OCD calibration is executed after DLL enable and reset, requiring ≥200 clock cycles post-DLL reset. It is initiated by setting EMR(1)[A9:A7] = 111 (OCD CAL mode), then issuing NOP commands while monitoring DQ behavior; exit via EMR(1)[A9:A7] = 000. Calibration adjusts DQ driver impedance to match external trace impedance within ±10%.
W9751G8KB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W9751G8KB-25 TR FAQ
1.How can I place an order for W9751G8KB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G8KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G8KB-25 TR reliable?
The price and inventory of W9751G8KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G8KB-25 TR is usually 5 days.
3.What payment methods are accepted for W9751G8KB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G8KB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G8KB-25 TR?
W9751G8KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G8KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G8KB-25 TR?
For technical support, including W9751G8KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G8KB-25 TR requirements.
6.How does Aetrix verify that W9751G8KB-25 TR is sourced from the original manufacturer or authorized distributors?
All W9751G8KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G8KB-25 TR meets industry standards.
7.What is the process for return or replacement of W9751G8KB-25 TR?
All W9751G8KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9751G8KB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G8KB-25 TR part is unused and in its original packaging.
Return procedure for W9751G8KB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G8KB-25 TR Tags

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M24C02-WMN6TP
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