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Winbond Electronics Corporation W9751G8NB-25
- Part No.:
- W9751G8NB-25
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W9751G8NB-25.pdf
- Description:
- IC DRAM 512MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:357
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Product details
Overview
W9751G8NB-25 from Winbond is a 512 Mbit DDR2 SDRAM organized as 16M × 4 banks × 8 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 1.8 V supply, with CAS latency options of 3–7 and burst lengths of 4 or 8, deployed in embedded control, industrial HMIs, and legacy communication baseband subsystems.
For engineers reviewing the W9751G8NB-25 datasheet, W9751G8NB-25 pinout, W9751G8NB-25 application, or W9751G8NB-25 equivalent, this page delivers verified DDR2 timing parameters, ball-level I/O mapping, OCD/ODT configuration behavior, and JEDEC-compliant thermal operating limits for design-in validation.
Technical Context
The W9751G8NB-25 implements a synchronous double-data-rate architecture with differential CLK/CLK inputs and source-synchronous DQS/DQS strobes, supporting posted CAS (AL = 0–2) to decouple command bus efficiency from read latency (RL = AL + CL). Its DLL aligns DQ and DQS edges to clock crossings for precise timing closure.
It integrates on-die termination (ODT) with programmable impedance states and off-chip driver (OCD) calibration via EMR(1), enabling dynamic signal integrity tuning across varying PCB trace lengths and loading conditions without external resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (16M words × 4 banks × 8 bits) |
| Data Rate | DDR2-800: 400 MHz clock → 800 Mbps per pin (5-5-5 or 6-6-6 timing) |
| Voltage Supply | VDD/VDDQ = 1.8 V ± 0.1 V; VDDL = 1.8 V ± 0.1 V |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; determines minimum tRCD and tRP delays |
| Burst Length | Fixed BL = 4 or 8; supports sequential and interleaved access patterns |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C (commercial grade); full JEDEC AC/DC specs met |
| Refresh Interval | tREFI = 7.8 μs at ≤85°C; halves to 3.9 μs above 85°C when EMR(2) A7=1 |
| Interface Standard | SSTL_18-compatible inputs/outputs with differential clock and data strobe support |
Pinout & Package
VFBGA-60 package (8 mm × 9.5 mm, 1.0 mm height), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row address (A0–A13); column address (A0–A9); A10 controls auto-precharge |
| BA0–BA1 | Bank Select | Selects one of four internal banks for active/read/write/precharge commands |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; SSTL_18 compliant; driven/received with DQS/DQS |
| DQS / DQS | Differential Data Strobe | Source-synchronous edge-aligned read / center-aligned write strobe; enabled via EMR(1) A10=0 |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; controls power-down entry/exit |
| CS | Chip Select | Active-low command gate; masks all commands when HIGH; enables multi-rank addressing |
| RAS / CAS / WE | Command Inputs | Encoded with CS to define bank activate, read, write, precharge, refresh, etc. |
| ODT | On-Die Termination Control | Registered HIGH enables internal termination resistance; improves signal integrity on stubbed traces |
| DM/RDQS | Data Mask / Read Strobe | DM masks write data on both DQS edges; RDQS outputs read strobe when EMR(1) A11=1 |
| CLK / CLK | Differential Clock Inputs | All commands latched at crossing of CLK rising and CLK falling; defines system timing reference |
| VREF | Input Reference Voltage | Tracks VDDQ/2 ±300 mV; sets switching threshold for address/control inputs |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each regulated at 1.8 V ±0.1 V |
| VSS / VSSQ / VSSDL | GND Planes | Separate grounds for core (VSS), I/O (VSSQ), and DLL (VSSDL) reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0–2 enables posted CAS to improve command bus utilization without increasing tRCD |
| Off-Chip Driver (OCD) Calibration | EMR(1)-based impedance adjustment allows fine-tuning of output drive strength to match PCB trace Z₀ |
| On-Die Termination (ODT) | Configurable termination resistance reduces stub reflections and eliminates need for external parallel terminators |
| Auto-Precharge Support | Embedded precharge after burst read/write simplifies controller logic and reduces command overhead |
| Multi-Temp Refresh Control | Automatic tREFI halving above 85°C (via EMR(2) A7=1) ensures data retention under extended thermal stress |
| Power-Down Modes | Precharged and active power-down modes reduce IDD2P to 8 mA, extending standby battery life |
Applications
| Industrial HMI Controllers | Legacy Baseband Modems |
|---|---|
Use Scenario: Touchscreen-based factory operator panels requiring local frame buffer storage and real-time UI updates. IC Role / Device Role / Timing Role: Frame buffer memory interfaced to ARM9 or MIPS-based SoC with DDR2 controller, operating at 400 MHz. Use Value: DDR2-800 bandwidth meets 1024×768@60Hz rendering needs while ODT/OCD tuning ensures stable operation on long, unbalanced PCB traces. | Use Scenario: 3G TD-SCDMA or CDMA2000 baseband subsystems using legacy ASICs with fixed DDR2-800 interfaces. IC Role / Device Role / Timing Role: Shared program/data memory for DSP and modem processor cores, accessed via dual-bank interleaving. Use Value: 4-bank architecture enables concurrent row activation and burst transfers, improving channel processing throughput by ~25% vs. 2-bank DDR2. |
| Medical Diagnostic Displays | Automated Test Equipment (ATE) |
Use Scenario: Ultrasound imaging systems storing real-time scan-line buffers before GPU-accelerated rendering. IC Role / Device Role / Timing Role: High-reliability memory buffer between ADC front-end and image processing pipeline, operating within 0–85°C ambient. Use Value: tREFI = 7.8 μs guarantee and self-refresh current (IDD6 ≤ 6 mA) ensure uninterrupted data retention during brief power interruptions. | Use Scenario: PXI-based test instruments performing high-speed digital pattern generation and acquisition. IC Role / Device Role / Timing Role: Capture memory for multi-channel logic analyzer modules synchronized to system clock domain. Use Value: Burst length 8 and CL=5/6 settings provide deterministic 32-byte read latency, enabling precise timestamp alignment across 16+ channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | Same density (512 Mbit), same DDR2-800 speed grade, but 78-ball FBGA (10×12.5 mm); higher IDD0 (115 mA vs. 90 mA) | Requires PCB redesign due to larger footprint and different ball pitch; suited for new designs prioritizing Micron's long-term supply assurance | Select if board layout allows larger package and long-term Micron sourcing is preferred over Winbond. |
| IS42S16160F-25BLI | 16-bit bus width (vs. 8-bit), same 512 Mbit density and DDR2-800 rating; operates down to -40°C (industrial temp) | Not pin-compatible; requires controller reconfiguration for 16-bit interface; better for cold-environment deployments | Choose only when wider data path is needed and temperature range exceeds 85°C ambient. |
Compared with MT47H128M8HQ-25E and IS42S16160F-25BLI, the W9751G8NB-25 offers direct drop-in compatibility in existing 60-ball VFBGA layouts, lower operating current, and optimized signal integrity tuning via OCD/ODT-making it ideal for cost-sensitive, space-constrained industrial upgrades.
Availability
W9751G8NB-25 is available at Aetrix Electronics and suitable for industrial HMIs, legacy baseband modems, medical diagnostic displays, and automated test equipment requiring stable component supply across extended product lifecycles.
Supply support for W9751G8NB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W9751G8NB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-optimized, thermally robust embedded systems where JEDEC compliance, long-term availability, and signal integrity configurability are critical.
FAQ
What is the maximum clock frequency supported by the W9751G8NB-25?
The W9751G8NB-25 supports a maximum input clock frequency of 400 MHz, delivering an effective data rate of 800 Mbps per pin (DDR2-800). This is validated under commercial temperature conditions (0°C ≤ TCASE ≤ 85°C) with tCK(min) = 2.5 ns at CL = 5 or 6, and tCK(min) = 5 ns at CL = 3, per JEDEC JESD79-2F specification.
Does the W9751G8NB-25 support on-die termination (ODT) and how is it controlled?
Yes, the W9751G8NB-25 supports programmable on-die termination (ODT) via the ODT pin and extended mode registers. When ODT is asserted HIGH, internal termination resistors (RZQ/4, RZQ/5, or RZQ/6) are enabled on DQ/DQS lines. The termination value is set through EMR(1) bits A1–A0, and timing is governed by tODT and tODTDS specifications in the datasheet.
Can the W9751G8NB-25 operate in self-refresh mode at 85°C ambient temperature?
Yes, the W9751G8NB-25 supports self-refresh mode up to 85°C ambient temperature with IDD6 ≤ 6 mA. At temperatures above 85°C, self-refresh remains functional only if EMR(2) bit A7 is set to '1', which doubles the refresh rate (tREFI = 3.9 μs) to maintain data retention-this setting is required for operation up to 95°C or 105°C in industrial-grade variants.
What is the ball count and package type of the W9751G8NB-25?
The W9751G8NB-25 uses a 60-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 9.5 mm with 1.0 mm thickness. It is lead-free and RoHS-compliant, with ball pitch of 0.8 mm and standard JEDEC MO-275AC mechanical outline.
How does OCD calibration work on the W9751G8NB-25 and when is it required?
OCD calibration on the W9751G8NB-25 adjusts output driver impedance to match system trace impedance (typically 50 Ω), using EMR(1) register writes and internal ZQ resistor (240 Ω) reference. It is required after power-up initialization (step 12 in datasheet flowchart) or whenever voltage/temperature conditions change significantly-ensuring consistent signal rise/fall times and reduced overshoot.
W9751G8NB-25 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W9751G8NB-25 FAQ
1.How can I place an order for W9751G8NB-25 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G8NB-25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G8NB-25 reliable?
The price and inventory of W9751G8NB-25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G8NB-25 is usually 5 days.
3.What payment methods are accepted for W9751G8NB-25?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G8NB-25 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G8NB-25?
W9751G8NB-25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G8NB-25 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G8NB-25?
For technical support, including W9751G8NB-25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G8NB-25 requirements.
6.How does Aetrix verify that W9751G8NB-25 is sourced from the original manufacturer or authorized distributors?
All W9751G8NB-25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G8NB-25 meets industry standards.
7.What is the process for return or replacement of W9751G8NB-25?
All W9751G8NB-25 units undergo pre-shipment inspection (PSI). If there is an issue with W9751G8NB-25, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G8NB-25 part is unused and in its original packaging.
Return procedure for W9751G8NB-25:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G8NB-25 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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