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Winbond Electronics Corporation W9751G8NB25I
- Part No.:
- W9751G8NB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W9751G8NB25I.pdf
- Description:
- IC DRAM 512MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,753
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Product details
Overview
W9751G8NB25I from Winbond is a 512 Mbit DDR2 SDRAM organized as 16M × 4 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, industrial temperature range (–40°C to +95°C), and VFBGA-60 (8 mm × 9.5 mm) packaging. It serves as main memory in embedded controllers, network processors, and industrial HMIs requiring reliable high-bandwidth data buffering.
For engineers reviewing the W9751G8NB25I datasheet, W9751G8NB25I pinout, W9751G8NB25I application, or W9751G8NB25I equivalent, key selection criteria include CAS latency support (CL=3–7), on-die termination (ODT), OCD impedance calibration, differential clock interface (CLK/CLK), and SSTL_18 I/O compatibility for signal integrity in dense PCB layouts.
Technical Context
This DDR2 SDRAM implements a 4-bank architecture with prefetch-4 I/O interface, DLL-aligned DQ/DQS timing, and source-synchronous data strobes (DQS/DQS). It supports programmable additive latency (AL=0–2), posted CAS, auto-precharge, and both self-refresh and auto-refresh modes with temperature-compensated tREFI down to 3.9 µS at 95°C.
Command decoding is synchronous to differential CLK/CLK edges; all address/control inputs are sampled at crossings. The device integrates ODT control via dedicated ODT pin, OCD calibration registers (EMR1), and extended mode registers for DLL enable/disable, RDQS configuration, and thermal refresh tuning-enabling robust operation across industrial thermal cycling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (16M words × 4 banks × 8 bits) |
| Data Rate | DDR2-800: 400 MHz clock → 800 Mbps transfer rate |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines read access delay in clock cycles |
| Burst Length | Fixed BL = 4 or 8 - defines number of consecutive data transfers per command |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for stable DDR2 signaling |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without derating |
| tREFI | Max 3.9 µS at 95°C - mandates doubled refresh rate above 85°C for data retention |
| Package | VFBGA-60 (8 mm × 9.5 mm, 1.0 mm height) - RoHS-compliant, lead-free, fine-pitch ball grid array |
Pinout & Package
VFBGA-60 package with 8×9.5 mm² footprint, 1.0 mm thickness, and 0.8 mm ball pitch. Ball layout optimized for signal integrity: separate VDDQ/VSSQ planes for I/O, isolated VDDL/VSSDL for DLL power, and dedicated VREF reference input.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bus; A10 controls auto-precharge activation during read/write |
| BA0–BA1 | Bank Select | Selects one of four internal banks for active, read, write, or precharge commands |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; SSTL_18 compatible with 1.8 V logic levels |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe: edge-aligned on reads, center-aligned on writes; enabled via EMR(1) |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; controls power-down entry/exit |
| CS | Chip Select | Active-low command gate; masks all commands when HIGH; enables multi-rank addressing |
| RAS / CAS / WE | Command Inputs | Define core operations (activate, read, write, precharge, refresh) in conjunction with CS |
| ODT | On-Die Termination Control | Registered HIGH enables internal termination resistors on DQ/DQS lines to reduce stub reflections |
| DM/RDQS | Data Mask or Read Strobe | DM masks write data on DQ lines; RDQS outputs read strobe when enabled via EMR(1)[A11] |
| CLK / CLK | Differential Clock Inputs | All commands latched at crossing of CLK rising and CLK falling edges; defines system timing reference |
| VREF | Input Reference Voltage | Tracks VDDQ/2 ±300 mV; sets switching threshold for address/control inputs |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require independent 1.8 V ±0.1 V regulation |
| VSS / VSSQ / VSSDL | GND Planes | Separate ground returns for core, I/O, and DLL minimize noise coupling between domains |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable termination resistance on DQ/DQS lines reduces signal reflections without external resistors |
| Off-Chip Driver (OCD) Calibration | Registers-based impedance tuning of output drivers ensures consistent drive strength across voltage/temperature |
| Differential Clock Interface | CLK/CLK differential pair rejects common-mode noise and improves jitter tolerance in noisy industrial environments |
| Temperature-Compensated Refresh | Automatic tREFI halving to 3.9 µS above 85°C maintains data retention without firmware intervention |
| Posted CAS with Additive Latency | AL=0–2 decouples command bus occupancy from data availability, increasing effective bandwidth under burst load |
| Source-Synchronous DQS Timing | DQS edge-aligned on reads and center-aligned on writes simplifies timing closure for FPGA/ASIC memory controllers |
Applications
| Industrial HMI Memory Buffer | Network Processor Frame Buffer |
|---|---|
Use Scenario: Touch-enabled human-machine interface in factory automation panels with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoC, buffering GUI assets, operational logs, and configuration data. Use Value: DDR2-800 bandwidth supports 60 fps UI updates; industrial temp rating ensures reliability in uncooled enclosures; ODT eliminates need for board-level termination resistors. | Use Scenario: Packet buffering in industrial Ethernet switches handling time-sensitive traffic (PROFINET, EtherCAT). IC Role / Device Role / Timing Role: Shared frame buffer for ingress/egress packet queues, accessed concurrently by multiple MAC engines and CPU cores. Use Value: 4-bank interleaving enables concurrent read/write to different banks; auto-precharge minimizes command overhead; tRC/tRAS timing meets switch ASIC timing budgets. |
| Embedded Controller Main Memory | Medical Imaging Data Cache |
Use Scenario: Real-time motion control system using dual-core RISC-V MCU with integrated DDR2 controller for servo loop computation and sensor fusion. IC Role / Device Role / Timing Role: System RAM executing firmware and storing interpolated position profiles, encoder history, and safety-critical state variables. Use Value: CL=3/4 latency enables sub-10 ns read access; VFBGA-60 footprint fits compact motor drive PCBs; –40°C to +95°C rating matches enclosure thermal profile. | Use Scenario: Portable ultrasound device requiring rapid acquisition and display of B-mode image frames with minimal latency. IC Role / Device Role / Timing Role: High-speed cache between ADC pipeline and display engine, holding up to 32 frames of 1024×768 pixel data. Use Value: Burst length 8 supports full-line transfers; differential DQS ensures clean sampling of high-frequency echo data; self-refresh preserves image buffers during standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | Same density (512 Mbit), same VFBGA-60 package, but rated for DDR2-800 (5-5-5) only at 0°C–85°C; no industrial temp grade | Not suitable for designs requiring guaranteed operation at –40°C or >85°C without derating or thermal margin analysis | Choose W9751G8NB25I when industrial temperature compliance is mandatory and board space is constrained. |
| IS42S16160F-25BLI | 16-bit bus width (vs. 8-bit), same DDR2-800 speed grade and –40°C to +95°C rating, but uses TSOP-54 package (larger footprint, less dense routing) | Requires PCB redesign for wider data bus and larger package; higher pin count increases trace complexity and EMI risk | Choose W9751G8NB25I when 8-bit bus width aligns with controller interface and VFBGA-60 is preferred for miniaturization. |
Compared with MT47H128M8HQ-25E and IS42S16160F-25BLI, W9751G8NB25I uniquely combines industrial temperature qualification, 8-bit bus width, VFBGA-60 packaging, and full DDR2-800 (5-5-5/6-6-6) timing compliance - making it optimal for space-constrained, thermally demanding embedded systems where signal integrity and long-term reliability are critical.
Availability
W9751G8NB25I is available at Aetrix Electronics and suitable for industrial HMIs, network processors, embedded controllers, and medical imaging devices requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9751G8NB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash storage, and security solutions, with over 30 years of DRAM design heritage and JEDEC-compliant manufacturing.
The W9751G8NB series targets cost-sensitive, thermally demanding embedded applications requiring JEDEC-standard DDR2 performance in compact packages - emphasizing industrial reliability, low-power refresh modes, and simplified board-level termination.
FAQ
What is the maximum supported CAS latency for W9751G8NB25I?
W9751G8NB25I supports programmable CAS latency values of CL = 3, 4, 5, 6, or 7. At DDR2-800 speed (400 MHz clock), CL=3 yields a 7.5 ns access delay, while CL=7 extends it to 17.5 ns. The selected CL must be configured via Mode Register Set (MRS) command during initialization and remains fixed until reprogrammed. All CL settings are fully compliant with JEDEC DDR2-800 timing specifications for the W9751G8NB25I speed grade.
Does W9751G8NB25I support differential DQS operation?
Yes, W9751G8NB25I supports differential DQS operation using DQS and DQS pins. This mode is enabled by setting EMR(1)[A10] = 0 during extended mode register programming. When active, DQS functions as a true differential strobe edge-aligned with read data and center-aligned with write data - improving timing margin and noise immunity. If disabled (EMR(1)[A10] = 1), DQS operates in single-ended mode and ball A2 (NU/RDQS) becomes no-connect.
How does W9751G8NB25I handle refresh at elevated temperatures?
W9751G8NB25I implements temperature-compensated refresh: above 85°C case temperature, tREFI automatically halves from 7.8 µS to 3.9 µS, doubling the required refresh rate to maintain data retention. This behavior is triggered by setting A7 = "1" in EMR(2) and is guaranteed across the full –40°C to +95°C operating range. No external thermal sensor or firmware intervention is needed - the device manages refresh timing autonomously based on internal thermal sensing.
Can W9751G8NB25I be used with a memory controller that lacks OCD calibration support?
Yes, W9751G8NB25I can operate without OCD calibration. If OCD is not used, the device defaults to factory-trimmed drive strength after issuing EMR(1) with A9=A8=A7=HIGH (OCD Default), followed by EMR(1) with A9=A8=A7=LOW (Exit OCD Calibration Mode). This sequence configures stable output impedance without runtime calibration - suitable for controllers lacking OCD handshake capability, though calibrated operation delivers tighter impedance matching across voltage/temperature.
What is the function of the DM/RDQS pin on W9751G8NB25I?
The DM/RDQS pin on W9751G8NB25I serves dual functions: as DM (Data Mask) during write operations - masking individual DQ bits when sampled HIGH on DQS edges - or as RDQS (Read Data Strobe) during reads when enabled via EMR(1)[A11] = 1. When RDQS is enabled, it outputs a strobe synchronized to read data, replacing DM functionality. The pin's loading matches DQ/DQS for balanced signal integrity, and its mode is selected exclusively through EMR configuration - no hardware strapping is required.
W9751G8NB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W9751G8NB25I FAQ
1.How can I place an order for W9751G8NB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G8NB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G8NB25I reliable?
The price and inventory of W9751G8NB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G8NB25I is usually 5 days.
3.What payment methods are accepted for W9751G8NB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G8NB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G8NB25I?
W9751G8NB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G8NB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G8NB25I?
For technical support, including W9751G8NB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G8NB25I requirements.
6.How does Aetrix verify that W9751G8NB25I is sourced from the original manufacturer or authorized distributors?
All W9751G8NB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G8NB25I meets industry standards.
7.What is the process for return or replacement of W9751G8NB25I?
All W9751G8NB25I units undergo pre-shipment inspection (PSI). If there is an issue with W9751G8NB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G8NB25I part is unused and in its original packaging.
Return procedure for W9751G8NB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G8NB25I Tags
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M24C02-WMN6TP
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