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Winbond Electronics Corporation W9751G8NB-25 TR
- Part No.:
- W9751G8NB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W9751G8NB-25 TR.pdf
- Description:
- IC DRAM 512MBIT PAR 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,146
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Product details
Overview
W9751G8NB-25 TR from Winbond is a 512 Mbit DDR2 SDRAM organized as 16M × 4 banks × 8 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5/6, tRCD=12.5 ns, and tRP=12.5 ns. It operates at 1.8 V ± 0.1 V supply, features on-die termination (ODT), OCD impedance adjustment, and SSTL_18 interface - deployed in industrial embedded controllers requiring reliable, low-power memory for real-time data buffering.
For engineers reviewing the W9751G8NB-25 TR datasheet, W9751G8NB-25 TR pinout, W9751G8NB-25 TR application, or W9751G8NB-25 TR equivalent, this page delivers verified DDR2 timing parameters, ball-level terminal mapping, JEDEC-compliant power-down modes, and validated drop-in alternatives for memory subsystem redesigns and BOM continuity planning.
Technical Context
The W9751G8NB-25 TR implements a synchronous double-data-rate architecture with differential CLK/CLK inputs and source-synchronous DQS/DQS strobes, enabling edge-aligned read and center-aligned write transfers. Its internal DLL aligns DQ and DQS transitions to clock edges, ensuring timing margin across temperature and voltage variations.
It supports programmable CAS latency (CL=3–7), additive latency (AL=0–2), burst lengths of 4 or 8, and auto-precharge for both read and write operations. Command decoding relies on CS, RAS, CAS, WE, and BA0/BA1, with mode register configuration via MRS and extended registers (EMR1–EMR3) controlling ODT, OCD calibration, RDQS enablement, and DLL state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (16,777,216 words × 4 banks × 8 bits) |
| Data Rate | DDR2-800: 800 Mbps per pin (400 MHz clock, two transfers/cycle) |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - directly impacts read access latency and system timing budget |
| tRCD / tRP | 12.5 ns minimum - defines minimum delay between ACTIVE and READ/WRITE or PRECHARGE commands |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V - requires tight regulation; VREF must track VDDQ/2 ± 300 mV |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C - full JEDEC AC/DC compliance within this range |
| Interface Standard | SSTL_18 - mandates compatible driver/receiver termination and signal integrity design |
Pinout & Package
VFBGA-60 package (8 mm × 9.5 mm, 1.0 mm height), RoHS-compliant, lead-free. Ball pitch: 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row/column address bus; A10 controls auto-precharge; A12/A13 support extended addressing |
| BA0, BA1 | Bank Select | Selects one of four internal banks for command targeting or MR/EMR access |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; SSTL_18 compliant; referenced to DQS/DQS for timing alignment |
| DQS, DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned on reads, center-aligned on writes; enables DDR timing closure |
| CLK, CLK | Differential Clock Input | Commands latched at crossing of CLK rising and CLK falling; defines all synchronous timing windows |
| CS, RAS, CAS, WE | Command Control | Encoded command bus; CS enables rank selection; all sampled on CLK/CLK crossing |
| ODT | On-Die Termination Enable | Registered HIGH activates internal termination resistors - critical for stub-free fly-by topology implementation |
| DM/RDQS | Data Mask or Read Strobe | DM masks write data on DQ lines; RDQS outputs read strobe when enabled via EMR(1)[A11] |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable pull-up/pull-down termination resistors reduce external component count and improve signal integrity in high-speed layouts |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance tuning of DQ/DQS drivers compensates for process/voltage/temperature drift - improves timing margin without board-level resistor changes |
| Posted CAS with Additive Latency | AL=0–2 allows pipelining of column commands ahead of row activation - increases command bus utilization and bandwidth efficiency |
| Multiple Power-Down Modes | Precharged and Active Power Down reduce IDD2P to ≤8 mA; Self Refresh cuts IDD6 to ≤6 mA - extends runtime in battery-backed systems |
| Differential Clock & Strobe Interface | CLK/CLK and DQS/DQS differential pairs reject common-mode noise and enable robust 400 MHz operation in noisy industrial environments |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and tag data storage; interfaces to ARM Cortex-M7 MCU via 8-bit DDR2 bus. Use Value: CL=5 and tRCD=12.5 ns enable sub-30 ns read-to-use latency; ODT and OCD ensure stable operation under EMI-heavy factory floor conditions. |
Use Scenario: Temporary frame buffering in portable ultrasound devices during real-time beamforming and image reconstruction. IC Role / Device Role / Timing Role: High-throughput data staging buffer between ADC front-end and FPGA-based processing pipeline. Use Value: DDR2-800 bandwidth (3.2 GB/s peak) sustains 12-bit, 40 MSPS video streams; low IDD2P (≤8 mA) minimizes thermal load in sealed enclosures. |
| Network Edge Router Packet Buffer | Automotive ADAS Camera Preprocessor |
Use Scenario: Deep packet inspection and QoS queue management in compact Layer 3 switches with limited PCB area. IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues; accessed concurrently by dual-core MIPS processor and traffic manager ASIC. Use Value: VFBGA-60 footprint (8×9.5 mm) fits dense routing layers; SSTL_18 compatibility ensures interoperability with legacy switch silicon. |
Use Scenario: Pre-processing buffer for 1.3 MP camera input in rear-view and surround-view systems before SoC ingestion. IC Role / Device Role / Timing Role: Low-latency line buffer for real-time distortion correction and HDR merging algorithms. Use Value: Auto-refresh and self-refresh modes maintain data integrity during vehicle ignition cycles; -25 speed grade guarantees timing at 125°C junction temp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M4BP-25E:H | 64M × 4 organization (256 Mbit); same DDR2-800 speed grade; 60-ball VFBGA; Micron's "E" revision adds enhanced reliability testing | Higher density supports larger firmware images; identical timing but tighter tRFC spec (130 ns vs. 137.5 ns) | Preferred for new designs requiring extended lifecycle support and automotive-qualified screening |
| IS42S16400F-25BLI | 16M × 16 organization (256 Mbit); 60-ball VFBGA; supports CL=4/5/6 only; no RDQS or OCD calibration | Larger data bus width reduces bus cycles per transfer; lacks advanced signal integrity features like OCD | Cost-optimized alternative where bandwidth > density and simplified layout outweigh fine-grained timing control |
Compared with W9751G8NB-25 TR, MT47H64M4BP-25E:H offers higher density and extended qualification, while IS42S16400F-25BLI trades advanced features for lower unit cost and simpler initialization - making each suitable for distinct cost, reliability, and signal integrity priorities.
Availability
W9751G8NB-25 TR is available at Aetrix Electronics and suitable for industrial automation, medical imaging, and network infrastructure applications requiring stable component supply, long-term BOM continuity, and JEDEC-compliant DDR2-800 performance.
Supply support for W9751G8NB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W9751G8NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for embedded systems demanding wide temperature operation, low-power refresh modes, and robust signal integrity in electrically noisy environments.
FAQ
What is the maximum operating frequency supported by the W9751G8NB-25 TR?
The W9751G8NB-25 TR supports DDR2-800 operation at 400 MHz clock frequency, delivering 800 Mbps per data pin. This speed grade corresponds to tCK(min) = 2.5 ns for CL=5/6 and is validated across 0°C to 85°C case temperature with full JEDEC AC/DC compliance. The device does not support DDR2-1066 or higher speeds.
Does the W9751G8NB-25 TR support on-die termination (ODT) and how is it controlled?
Yes, the W9751G8NB-25 TR supports programmable on-die termination (ODT) via the ODT pin (Ball F9). When registered HIGH, ODT enables internal termination resistors on DQ, DQS, and DM lines. ODT state is controlled dynamically by the memory controller and must be configured in the extended mode register EMR(1) to select resistance values (75 Ω, 150 Ω, or off).
What are the key power management features of the W9751G8NB-25 TR?
The W9751G8NB-25 TR supports Precharged Power Down (IDD2P ≤ 8 mA), Active Power Down, and Self Refresh (IDD6 ≤ 6 mA at TCASE ≤ 85°C). These modes reduce dynamic and leakage current during idle periods. Self Refresh maintains data integrity without external clocks, essential for battery-backed or low-power standby operation in industrial systems.
How is the W9751G8NB-25 TR initialized after power-up?
W9751G8NB-25 TR requires a strict 13-step initialization sequence: stable power ramp, 200 µs clock stabilization, CKE assertion, PRECHARGE ALL, three EMRS commands (to EMR2, EMR3, EMR1), DLL enable/reset, MRS, OCD calibration (optional), and ≥2 AUTO REFRESH commands. Skipping any step risks undefined behavior or initialization failure.
Is the W9751G8NB-25 TR pin-compatible with other Winbond DDR2 SDRAMs like the W9751G8KB series?
No, the W9751G8NB-25 TR is not pin-compatible with the W9751G8KB series. While both are 60-ball VFBGA DDR2 SDRAMs, ball assignments differ - notably, W9751G8KB uses different locations for VREF, VDDL, and ODT. Layout reuse requires verification against each device's ball configuration table; direct substitution is not supported.
W9751G8NB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W9751G8NB-25 TR FAQ
1.How can I place an order for W9751G8NB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9751G8NB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9751G8NB-25 TR reliable?
The price and inventory of W9751G8NB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9751G8NB-25 TR is usually 5 days.
3.What payment methods are accepted for W9751G8NB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9751G8NB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9751G8NB-25 TR?
W9751G8NB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9751G8NB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9751G8NB-25 TR?
For technical support, including W9751G8NB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9751G8NB-25 TR requirements.
6.How does Aetrix verify that W9751G8NB-25 TR is sourced from the original manufacturer or authorized distributors?
All W9751G8NB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9751G8NB-25 TR meets industry standards.
7.What is the process for return or replacement of W9751G8NB-25 TR?
All W9751G8NB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9751G8NB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9751G8NB-25 TR part is unused and in its original packaging.
Return procedure for W9751G8NB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9751G8NB-25 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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