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Winbond Electronics Corporation W978H2KBVX1E
- Part No.:
- W978H2KBVX1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX1E.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,208
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Product details
Overview
W978H2KBVX1E from Winbond is a 256Mb LPDDR2-S4B SDRAM organized as 16M x 16, operating at 800 Mbps data rate (400 MHz clock) with 1.2V core/VDDQ supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 in mobile applications requiring low-power memory for application processors.
For engineers reviewing the W978H2KBVX1E datasheet, W978H2KBVX1E pinout, W978H2KBVX1E application, or W978H2KBVX1E equivalent, key selection criteria include LPDDR2-800 timing compliance, 96-ball VFBGA package mapping, partial array self-refresh (PASR), ZQ calibration support, and MR10-based DQ calibration capability.
Technical Context
This device implements JEDEC-standard LPDDR2-S4B interface with differential CK/CK#, DQS/DQS# strobes and single-ended CA bus, supporting both burst read (RL=3/5) and burst write (WL=1) operations with tRCD = tRP = 3 cycles and tRRD = 2 cycles. It includes dedicated mode registers (MR0–MR63) for configuration of temperature sensing, PASR bank masking, and DQ calibration patterns.
Power management features include deep power-down (DPD), auto-precharge, and controlled power ramp sequences compliant with LPDDR2 initialization requirements. The device supports seamless burst transitions (tCCD = 2), burst terminate, and write data mask (DM) functionality with HSUL_12 I/O driver standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 organization) |
| Data Rate | 800 Mbps (400 MHz clock frequency), compliant with LPDDR2-800 spec |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; supports stable operation across -40°C to +85°C |
| Burst Length | Configurable BL=4 or BL=8 via MR1; enables flexible bandwidth matching |
| CAS Latency | RL=3 or RL=5 selectable via MR5; determines read access timing overhead |
| Refresh Interval | tREFI = 3.9 μs at 85°C; supports JEDEC-compliant distributed refresh scheduling |
| Power Modes | Supports active, precharge power-down, deep power-down, and self-refresh with PASR |
Pinout & Package
W978H2KBVX1E uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, 8 mm × 10.5 mm body size, and standard LPDDR2 ball assignment per JEDEC JESD209-2A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O Power Supply | 1.2V supply pins requiring local decoupling; separate VDDQ enables independent I/O voltage control |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines system timing reference for all command/data transfers |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous data strobe for DQ read/write capture; enables timing margin recovery |
| CA[0:5] | Command Address Bus | Single-ended 6-bit bus carrying commands (ACT, PRE, REF, MRS) and address bits |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 drivers; supports BL=4/8 burst transfers |
| DM[0:1] | Data Mask | Per-byte mask signals enabling selective write masking without full bus turnaround |
| CKE | Clock Enable | Asynchronous enable controlling entry/exit from power-down and self-refresh states |
| ZQ | Calibration Reference | External 240Ω resistor connection point for on-die impedance calibration (RONPU/RONPD) |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic output driver impedance tuning via external 240Ω resistor to maintain signal integrity across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by selectively refreshing only active banks via MR16 bank mask register |
| DQ Calibration Patterns | MR32/MR40 provide predefined patterns for high-accuracy DQ timing alignment during initialization |
| Temperature Sensor Interface | Integrated sensor accessible via MR4; allows thermal-aware power management in mobile SoC platforms |
| Deep Power-Down Mode | Reduces standby current to ≤10 μA while retaining memory contents; exit time < 100 μs |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors in sub-6-inch smartphones with display resolution up to FHD. IC Role / Device Role / Timing Role: LPDDR2-S4B SDRAM providing 800 Mbps bandwidth with CAS latency 3 for real-time UI rendering and OS task switching. Use Value: Low 1.2V supply and deep power-down mode extend battery life; PASR reduces refresh power during background app execution. | Use Scenario: Dedicated graphics memory for Mali-T860 GPU in 7–10 inch Android tablets running OpenGL ES 3.1 workloads. IC Role / Device Role / Timing Role: Burst-length-8, CAS-latency-5 memory subsystem delivering sustained 1.6 GB/s bandwidth for texture and frame buffer access. Use Value: HSUL_12 I/O drivers and DQS-clocked reads ensure timing margin at 400 MHz; ZQ calibration maintains signal fidelity across temperature swings. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Memory for QNX- or Android Automotive-based head units with dual-display output and voice assistant processing. IC Role / Device Role / Timing Role: Temperature-rated (-40°C to +85°C) LPDDR2 memory supporting simultaneous video decode and navigation map rendering. Use Value: Integrated temperature sensor (MR4) enables adaptive refresh rate scaling; tREFI = 3.9 μs ensures data retention under automotive thermal cycling. | Use Scenario: Memory for ARM Cortex-A7/A9-based HMIs in factory automation panels with 720p display and real-time PLC communication. IC Role / Device Role / Timing Role: Reliable 256Mb LPDDR2 buffer for GUI layer compositing and firmware update staging in fanless enclosures. Use Value: Deep power-down mode (<10 μA) supports energy harvesting power budgets; MR10-based DQ calibration ensures robustness across long-term industrial deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1DJ-107 WT:A | Same 256Mb x16 LPDDR2-800, but uses 96-ball VFBGA with different ball map (JEDEC-compliant but non-identical pinout) | Requires PCB layout revision due to CA/DQ pin reordering; lacks MR4 temperature sensor register | Select when sourcing flexibility is prioritized over drop-in replacement; verify CA bus routing and calibration flow compatibility |
| IS42S16160F-6BLI | LPDDR2-667 (333 MHz), lower speed grade; same 96-ball VFBGA footprint but different power sequencing requirements | Not suitable for 400 MHz designs; higher tRCD/tRP (4 cycles) limits timing margin in high-performance UI paths | Choose only for cost-sensitive, thermally constrained designs where 667 Mbps bandwidth suffices |
Compared with MT42L256M16D1DJ-107 WT:A and IS42S16160F-6BLI, W978H2KBVX1E delivers higher-speed LPDDR2-800 operation with integrated temperature sensing and finer-grained PASR control-critical for battery-constrained mobile and automotive systems requiring dynamic power optimization.
Availability
W978H2KBVX1E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment head unit designs requiring stable component supply with full JEDEC LPDDR2-S4B compliance.
Supply support for W978H2KBVX1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and DRAM products for consumer, industrial, and automotive markets.
W978H2KBVX1E belongs to Winbond's LPDDR2-S4B product line designed specifically for mobile and embedded systems demanding low-voltage, low-power, high-reliability memory with advanced power management and calibration features.
FAQ
What is the maximum data rate supported by W978H2KBVX1E?
W978H2KBVX1E supports a maximum data rate of 800 Mbps, corresponding to a 400 MHz clock frequency (tCK = 2.5 ns), fully compliant with JEDEC LPDDR2-800 specifications. This is confirmed in the AC timing tables (Section 7.4) and electrical characteristics (Section 8.2). The device achieves this rate using HSUL_12 I/O drivers and differential DQS strobing, and W978H2KBVX1E requires strict board-level impedance control and matched trace lengths to maintain signal integrity at this speed.
Does W978H2KBVX1E support partial array self-refresh (PASR)?
Yes, W978H2KBVX1E supports PASR via Mode Register 16 (MR16), allowing selective refresh of individual banks to reduce self-refresh current. This feature is documented in Section 7.4.18 and Table 7.3.13 of the datasheet. When enabled, PASR can cut IDD6 current by up to 50% compared to full-array self-refresh, making W978H2KBVX1E especially valuable in battery-powered devices where background memory retention must coexist with ultra-low power consumption.
What package type and ball count does W978H2KBVX1E use?
W978H2KBVX1E uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 8 mm × 10.5 mm body dimensions. Ball assignment and configuration are detailed in Sections 4 and 5 of the datasheet, confirming compatibility with standard LPDDR2-S4B layout guidelines. This package is mechanically and electrically distinct from 60-ball or 136-ball LPDDR2 variants, and W978H2KBVX1E requires precise stencil design and reflow profiling for reliable assembly.
How is ZQ calibration implemented on W978H2KBVX1E?
W978H2KBVX1E implements ZQ calibration using an external 240Ω ±1% resistor connected to the ZQ pin, as specified in Section 7.4.23 and Table 8.2.6.6. The device performs internal RONPU/RONPD adjustment during MRW commands (e.g., MRW to MR10), enabling dynamic output driver impedance tuning across voltage and temperature. This calibration is mandatory before high-speed operation, and W978H2KBVX1E requires the ZQ resistor to be placed within 5 mm of the ball with minimal stub length to meet JEDEC AC timing margins.
What is the operating temperature range for W978H2KBVX1E?
W978H2KBVX1E is rated for industrial temperature operation from -40°C to +85°C, as stated in Section 8.2.3 (Operating Temperature Conditions) and validated across all AC/DC parameters in Table 8.3.2.1. This range supports deployment in automotive infotainment, industrial HMIs, and outdoor-connected devices. The device includes an on-die temperature sensor (accessible via MR4) to enable thermal-aware refresh rate adaptation, and W978H2KBVX1E maintains full LPDDR2 timing compliance-including tREFI = 3.9 μs-at the maximum junction temperature.
W978H2KBVX1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX1E FAQ
1.How can I place an order for W978H2KBVX1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX1E reliable?
The price and inventory of W978H2KBVX1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX1E is usually 5 days.
3.What payment methods are accepted for W978H2KBVX1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H2KBVX1E?
W978H2KBVX1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX1E?
For technical support, including W978H2KBVX1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX1E requirements.
6.How does Aetrix verify that W978H2KBVX1E is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX1E meets industry standards.
7.What is the process for return or replacement of W978H2KBVX1E?
All W978H2KBVX1E units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX1E part is unused and in its original packaging.
Return procedure for W978H2KBVX1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX1E Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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