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Winbond Electronics Corporation W978H2KBVX1E TR
- Part No.:
- W978H2KBVX1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX1E TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,432
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Product details
Overview
W978H2KBVX1E TR from Winbond is a 256Mb LPDDR2-S4B SDRAM in 130-ball FBGA (9mm × 11.5mm), operating at 1.2V core/io with 800Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and on-die termination calibration via ZQ. It serves as main memory in space-constrained mobile SoC platforms requiring low-voltage, high-bandwidth DRAM.
For engineers reviewing the W978H2KBVX1E TR datasheet, W978H2KBVX1E TR pinout, W978H2KBVX1E TR application, or W978H2KBVX1E TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), MR10-based DQ calibration support, PASR bank masking capability, and HSUL_12 I/O interface compatibility with mobile application processors.
Technical Context
This device implements the JEDEC LPDDR2-S4B standard with dual-channel 16-bit x16 organization (256Mb total), supporting both single-ended CA/CS_n and differential CK/DQS signaling. It features mode register programmability across MR0–MR63, including temperature-sensing (MR4), partial array self-refresh (MR16), and ZQ calibration control (MR23).
Power management includes deep power-down (DPD), auto-precharge, and seamless burst operations with tCCD = 2 cycles. Initialization requires controlled VDD/VDDQ ramp with CKE gating, and all timing parameters (e.g., tDQSCKmin = –0.25tCK, tDQSCKmax = +0.25tCK) are specified for 800Mbps operation under –40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 × 1 bank group) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), compatible with 1066 Mbps/pin timing margins |
| Voltage Supply | 1.2V ±0.06V core/io, with separate VREF supply (0.6V ±1% DC tolerance) |
| Burst Length | Configurable BL=4 or BL=8; supports seamless read/write with tCCD=2 cycles |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, tDQSCKmin/max = ±0.25tCK @ 800Mbps |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR) |
| Interface Standard | HSUL_12 I/O with differential CK/DQS, single-ended CA/CS_n, on-die ODT and ZQ calibration |
Pinout & Package
W978H2KBVX1E TR uses a 130-ball fine-pitch FBGA package (9.0mm × 11.5mm, 0.5mm pitch), compliant with JEDEC MO-276AA. Ball assignment follows LPDDR2-S4B layout with dedicated DQ/DQS/DM groups per byte lane, dual CK/CK#, and split VDD/VSS distribution for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16 bus) | Bi-directional data lines with programmable drive strength and on-die termination |
| DQS0/DQS1 | Data Strobe (x2) | Differential strobes for source-synchronous read/write capture; HSUL_12 compatible |
| CK_t/CK_c | Differential Clock Input | System clock reference for command/data timing; 800MHz max frequency |
| CA0–CA11 | Command Address Bus | Single-ended inputs for row/column/bank address and command encoding (ACT, RD, WR, etc.) |
| CS_n | Chip Select | Active-low enable for command decoding; supports multi-bank command arbitration |
| CKE | Clock Enable | Gates internal clock domains; controls entry/exit from power-down and self-refresh |
| ZQ | ZQ Calibration Reference | External 240Ω ±1% resistor connection point for RONPU/RONPD calibration |
Key Features
| Feature | Design Value |
|---|---|
| On-die ZQ calibration | Enables dynamic RONPU/RONPD adjustment using external 240Ω resistor, maintaining signal integrity across voltage/temperature |
| PASR (Partial Array Self-Refresh) | Reduces self-refresh current by masking inactive banks via MR16, critical for battery-powered mobile standby |
| Temperature sensor interface | Integrated thermal sensing (MR4) enables system-level thermal throttling without external sensors |
| HSUL_12 I/O standard | Low-voltage swing (0.6V) differential signaling minimizes EMI and crosstalk in dense mobile PCB layouts |
| Deep Power-Down mode | Reduces IDD6 to ≤10µA while retaining memory state, enabling ultra-low-power suspend/resume cycles |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in smartphones with sub-10mm z-height constraints. IC Role / Device Role / Timing Role: LPDDR2-800-compliant SDRAM providing 1.28GB/s bandwidth to CPU/GPU subsystems with tRCD/tRP=3-cycle latency. Use Value: Enables fast UI rendering and app switching while meeting JEDEC LPDDR2-S4B timing compliance and 1.2V supply requirements. | Use Scenario: On-board main memory for mid-tier Android tablets requiring extended battery life and thermal efficiency. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 SDRAM supporting PASR and deep power-down to reduce average system IDD during video playback/idle. Use Value: Lowers active and standby power consumption via MR16-controlled bank masking and DPDD mode, extending runtime by >12% vs. non-PASR alternatives. |
| Automotive Infotainment Head Unit | Industrial HMI Display Controller |
Use Scenario: Memory subsystem for QNX/Linux-based infotainment units operating in –40°C to +85°C ambient environments. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR2 SDRAM with MR4-reported die temperature and robust tDQSCK timing margin (±0.25tCK). Use Value: Ensures reliable boot and graphics buffer access across automotive thermal cycles without external thermal compensation circuitry. | Use Scenario: Frame buffer memory for ruggedized human-machine interface displays used in factory automation panels. IC Role / Device Role / Timing Role: High-reliability LPDDR2 SDRAM with HSUL_12 I/O and differential CK/DQS, supporting noise-immune operation in electrically noisy industrial settings. Use Value: Maintains data integrity under EMI stress via differential signaling and on-die ODT, eliminating need for external termination resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-107:J | Same 256Mb x16 LPDDR2-1066, but uses 1.2V-only VDDQ and lacks MR4 temperature reporting | Requires external thermal monitoring; no integrated PASR bank masking (MR16) | Prefer when higher bandwidth (1066Mbps) is mandatory and thermal management is handled externally |
| IS42S16160F-6BLI | LPDDR2-800 x16, but 144-ball FBGA (10mm × 13mm); no ZQ calibration or MR10 DQ calibration support | Larger footprint; limited calibration capability increases layout sensitivity to trace length mismatch | Select when board space allows larger package and system-level calibration is acceptable |
Compared with MT42L256M16RE-107:J and IS42S16160F-6BLI, W978H2KBVX1E TR provides tighter integration of thermal sensing, PASR, and ZQ calibration in a smaller 130-ball footprint-critical for next-gen compact mobile designs where power, size, and autonomous calibration are prioritized.
Availability
W978H2KBVX1E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2-800 performance.
Supply support for W978H2KBVX1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W978H series targets mobile and portable electronics, delivering JEDEC LPDDR2-S4B-compliant memory with integrated power optimization, thermal awareness, and calibration features for SoC co-design.
FAQ
What is the ball count and package type of W978H2KBVX1E TR?
W978H2KBVX1E TR uses a 130-ball fine-pitch FBGA package (9.0mm × 11.5mm, 0.5mm pitch), conforming to JEDEC MO-276AA. This compact footprint supports high-density mobile PCB layouts while maintaining signal integrity through optimized ball mapping for DQ/DQS/CK routing.
Does W978H2KBVX1E TR support ZQ calibration, and what external component is required?
Yes, W978H2KBVX1E TR supports on-die ZQ calibration via MR23 commands. It requires an external 240Ω ±1% precision resistor connected to the ZQ pin to calibrate RONPU and RONPD output driver impedances across voltage and temperature variations.
What LPDDR2 speed grades does W978H2KBVX1E TR support, and what are the key timing parameters?
W978H2KBVX1E TR is rated for LPDDR2-800 operation (800Mbps/pin) with tRCD = tRP = 3 cycles and tRRD = 2 cycles. It also meets LPDDR2-1066 timing margins, supporting tDQSCKmin/max = ±0.25tCK at 800Mbps for robust data capture in high-noise environments.
How does W978H2KBVX1E TR implement partial array self-refresh (PASR)?
W978H2KBVX1E TR implements PASR via Mode Register MR16 (MA[7:0] = 10H), allowing software to mask specific banks from self-refresh. This reduces IDD6 current during standby-critical for extending battery life in always-on mobile devices without compromising memory retention.
Is W978H2KBVX1E TR compatible with standard LPDDR2 controllers, and what interface standard does it use?
Yes, W978H2KBVX1E TR is fully JEDEC LPDDR2-S4B compliant and interoperable with standard LPDDR2 controllers. It uses the HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n, ensuring drop-in compatibility with existing mobile SoC reference designs.
W978H2KBVX1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX1E TR FAQ
1.How can I place an order for W978H2KBVX1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX1E TR reliable?
The price and inventory of W978H2KBVX1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX1E TR is usually 5 days.
3.What payment methods are accepted for W978H2KBVX1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H2KBVX1E TR?
W978H2KBVX1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX1E TR?
For technical support, including W978H2KBVX1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX1E TR requirements.
6.How does Aetrix verify that W978H2KBVX1E TR is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX1E TR meets industry standards.
7.What is the process for return or replacement of W978H2KBVX1E TR?
All W978H2KBVX1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX1E TR part is unused and in its original packaging.
Return procedure for W978H2KBVX1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX1E TR Tags
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M24C02-WMN6TP
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AT24CS02-SSHM-T
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