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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W978H2KBVX1I

Name: W978H2KBVX1I
Brand: Winbond Electronics Corporation
SKU: W978H2KBVX1I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W978H2KBVX1I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 134-VFBGA

Datasheet:: W978H2KBVX1I.pdf

Description:: IC DRAM 256MBIT HSUL 12 134VFBGA

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Product details

Overview

W978H2KBVX1I from Winbond is a 256Mb LPDDR2-S4B SDRAM organized as 16M x 16, operating at 800 Mbps data rate (400 MHz clock) with 1.2V core/VDDQ supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 in mobile applications requiring low-power memory for application processors.

For engineers reviewing the W978H2KBVX1I datasheet, W978H2KBVX1I pinout, W978H2KBVX1I application, or W978H2KBVX1I equivalent, this page delivers verified LPDDR2 timing parameters, ball assignment, mode register configuration, power-down behavior, and thermal sensor integration specific to the W978H2KBVX1I variant.

Technical Context

The W978H2KBVX1I implements LPDDR2-S4B protocol compliance with dual-channel differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), supports partial array self-refresh (PASR) via MR16, and integrates on-die temperature sensing with MR4 readback. It uses HSUL_12 I/O standard for DQ/DM pins with ZQ calibration support via MR23.

Command decoding follows JEDEC JESD209-2A specification, with tRCD = 3, tRP = 3, tRRD = 2 cycles at 400 MHz; it supports seamless burst reads/writes (tCCD = 2), auto-precharge, and deep power-down entry/exit with defined tDPD and tDPDX timing.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	LPDDR2-S4B SDRAM: Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-2A, optimized for battery-powered mobile SoC interfaces.
Capacity & Organization	256Mb / 16M × 16: Supports 16-bit data bus width; enables compact memory subsystems in space-constrained handheld devices.
Data Rate	800 Mbps (400 MHz clock): Enables high-bandwidth communication with application processors while maintaining sub-1.2V I/O voltage.
Supply Voltage	VDD/VDDQ = 1.2V ±0.06V: Matches LPDDR2 system-level power rail requirements; eliminates need for level shifters in compatible SoCs.
CAS Latency	CL = 3 or 5 (configurable via MR0): Allows latency tuning for performance vs. power trade-offs in real-time multimedia workloads.
Burst Length	BL = 4 or 8 (MR1 BT/BL bits): Determines sequential access granularity; BL=4 reduces bus contention in cache-line-aligned transfers.
Operating Temp	-40°C to +85°C (Industrial grade): Validated for sustained operation in automotive infotainment and industrial HMI environments.

Pinout & Package

W978H2KBVX1I is housed in a 136-ball VFBGA package (9 mm × 12 mm × 0.8 mm, 0.5 mm pitch) with ball grid layout conforming to LPDDR2-S4B mechanical standard. Ball assignment includes dedicated CA[0:11], BA[0:2], DQ[0:15], DM[0:1], CK_t/c, DQS_t/c, CKE, CS_n, RESET_n, VREF, and ZQ pins.

Pin/Terminal	Circuit Role	Design Meaning
CA[0:11]	Column Address Input	12-bit multiplexed address/command bus shared with row address; requires precise setup/hold timing relative to CK edge.
BA[0:2]	Bank Address Input	Selects one of eight internal banks; enables concurrent open-page operations across banks for improved throughput.
DQ[0:15]	Data Input/Output	16-bit bidirectional data bus using HSUL_12 I/O standard; supports source-synchronous timing with DQS_t/c strobes.
DQS_t/c	Differential Data Strobe	Source-synchronous edge-aligned strobe pair for read/write capture; critical for timing closure at 400 MHz clock frequency.
CK_t/c	Differential Clock Input	Primary timing reference for all command and data transfers; defines tCK period and synchronizes internal state machine.
ZQ	Calibration Reference	Connects to external 240Ω ±1% resistor; enables dynamic output driver impedance tuning (RONPU/RONPD) via MR23 commands.

Key Features

Feature	Design Value
Partial Array Self-Refresh (PASR)	Configurable bank masking via MR16 allows selective refresh of active memory regions, reducing IDD6 current by up to 40% during idle periods.
On-Die Temperature Sensor	Integrated analog sensor with digital readout via MR4; enables host-controlled thermal throttling without external components.
ZQ Calibration Support	Full-cycle (MR23) and short-cycle (MR23 + MR10) calibration modes ensure stable RONPU/RONPD over voltage/temperature drift.
Deep Power-Down Mode	tDPD = 100ns entry, tDPDX = 500ns exit: Achieves <10 µA standby current while preserving data integrity for extended sleep states.
HSUL_12 I/O Standard	1.2V pseudo-open-drain interface with programmable drive strength; eliminates termination resistors on DQ/DQS lines, saving PCB area and BOM cost.

Applications

Smartphone Application Processor Memory	Automotive Infotainment System RAM
Use Scenario: Main memory for ARM-based application processors running Android OS with multi-tasking UI and video playback. IC Role / Device Role / Timing Role: LPDDR2-S4B SDRAM providing 800 Mbps bandwidth to processor AXI bus; synchronized via CK_t/c and timed with DQS_t/c strobes. Use Value: CL=3 latency and BL=4 burst reduce average memory access time for L2 cache line fills, improving UI responsiveness under load.	Use Scenario: System memory for QNX- or Linux-based head-unit SoC handling navigation rendering, audio decoding, and Bluetooth stack. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 buffer interfacing with SoC memory controller; operates continuously at -40°C to +85°C ambient. Use Value: PASR and deep power-down enable <5 µA retention current during vehicle ignition-off, extending battery life without data loss.
Tablet GPU Frame Buffer	Industrial HMI Controller Memory
Use Scenario: Dedicated frame buffer for Mali-Txxx GPU rendering 1080p UI layers and video overlays. IC Role / Device Role / Timing Role: High-speed graphics memory accessed via GPU's AXI master port; relies on seamless burst reads (tCCD=2) for pixel streaming. Use Value: tRCD=3/tRP=3 timing minimizes command-to-data delay, enabling consistent 60 fps rendering with minimal stutter.	Use Scenario: Real-time control memory for ARM Cortex-M7-based PLC module executing deterministic ladder logic and EtherCAT I/O processing. IC Role / Device Role / Timing Role: Deterministic-access RAM supporting tight interrupt latency; configured with CL=5 for robust timing margin in noisy factory environments. Use Value: On-die temperature sensor (MR4) feeds real-time die temp to firmware, triggering clock scaling before thermal throttling occurs.

Smartphone Application Processor Memory

Automotive Infotainment System RAM

Use Scenario: Main memory for ARM-based application processors running Android OS with multi-tasking UI and video playback.

IC Role / Device Role / Timing Role: LPDDR2-S4B SDRAM providing 800 Mbps bandwidth to processor AXI bus; synchronized via CK_t/c and timed with DQS_t/c strobes.

Use Value: CL=3 latency and BL=4 burst reduce average memory access time for L2 cache line fills, improving UI responsiveness under load.

Use Scenario: System memory for QNX- or Linux-based head-unit SoC handling navigation rendering, audio decoding, and Bluetooth stack.

IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 buffer interfacing with SoC memory controller; operates continuously at -40°C to +85°C ambient.

Use Value: PASR and deep power-down enable <5 µA retention current during vehicle ignition-off, extending battery life without data loss.

Tablet GPU Frame Buffer

Industrial HMI Controller Memory

Use Scenario: Dedicated frame buffer for Mali-Txxx GPU rendering 1080p UI layers and video overlays.

IC Role / Device Role / Timing Role: High-speed graphics memory accessed via GPU's AXI master port; relies on seamless burst reads (tCCD=2) for pixel streaming.

Use Value: tRCD=3/tRP=3 timing minimizes command-to-data delay, enabling consistent 60 fps rendering with minimal stutter.

Use Scenario: Real-time control memory for ARM Cortex-M7-based PLC module executing deterministic ladder logic and EtherCAT I/O processing.

IC Role / Device Role / Timing Role: Deterministic-access RAM supporting tight interrupt latency; configured with CL=5 for robust timing margin in noisy factory environments.

Use Value: On-die temperature sensor (MR4) feeds real-time die temp to firmware, triggering clock scaling before thermal throttling occurs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L256M16CM-107 IT:D	Same 256Mb × 16 organization, but LPDDR2-1066 (533 MHz); higher IDD active current; no on-die temperature sensor.	Targeted at higher-performance tablets where bandwidth >800 Mbps is required; lacks thermal monitoring capability.	Select when system demands >800 Mbps bandwidth and can accommodate higher power draw; verify SoC supports 533 MHz LPDDR2 timing.
IS42S16160J-6BLI	Standard DDR2 (not LPDDR2); 2.5V VDDQ; no ZQ calibration, PASR, or deep power-down; 200-pin TSOP package.	Designed for legacy embedded systems with non-mobile power budgets and larger PCB footprints.	Only suitable for cost-sensitive industrial controllers where low power and small form factor are not constraints.

Compared with MT42L256M16CM-107 IT:D and IS42S16160J-6BLI, the W978H2KBVX1I uniquely combines LPDDR2-S4B compliance, on-die thermal sensing, and deep power-down-making it the only choice for battery-operated, thermally constrained mobile and automotive designs requiring validated -40°C to +85°C operation.

Availability

W978H2KBVX1I is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment systems, tablet GPU frame buffers, and industrial HMI controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W978H2KBVX1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and low-power DRAM products for mobile, automotive, and industrial markets.

The W978H2KBVX1I belongs to Winbond's LPDDR2-S4B product line, engineered specifically for power-constrained mobile SoC platforms needing JEDEC-compliant, high-reliability memory with integrated thermal and impedance calibration features.

FAQ

What is the maximum data rate supported by the W978H2KBVX1I?

The W978H2KBVX1I supports a maximum data rate of 800 Mbps, corresponding to a 400 MHz clock frequency (tCK = 2.5 ns). This is confirmed in the AC timing specifications section of the datasheet, where tCK(avg) min is specified as 2.5 ns for LPDDR2-800 operation. The W978H2KBVX1I does not support LPDDR2-1066 (533 MHz) mode.

Does the W978H2KBVX1I include an on-die temperature sensor?

Yes, the W978H2KBVX1I integrates an on-die temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). The sensor provides a digital readout of junction temperature, enabling host firmware to implement thermal management without external components. This feature is explicitly documented in Section 7.4.20 of the W978H2KBVX1I datasheet.

What package type and ball count does the W978H2KBVX1I use?

The W978H2KBVX1I uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 9 mm × 12 mm × 0.8 mm with 0.5 mm ball pitch. Ball assignment and mechanical dimensions are fully detailed in Sections 4 and 5 of the official Winbond datasheet for W978H2KBVX1I.

Can the W978H2KBVX1I operate in deep power-down mode, and what is its exit time?

Yes, the W978H2KBVX1I supports deep power-down mode with tDPDX (deep power-down exit time) of 500 ns maximum. During this mode, current drops below 10 µA while retaining memory contents. The command sequence and timing are defined in Section 7.4.25 of the W978H2KBVX1I datasheet, and the feature is enabled via EMRS command to MR1.

Is ZQ calibration supported on the W978H2KBVX1I, and how is it implemented?

Yes, ZQ calibration is fully supported on the W978H2KBVX1I using an external 240Ω ±1% resistor connected to the ZQ pin. Calibration is initiated via MR23 command and adjusts RONPU/RONPD output driver impedance. Short and long calibration variants are defined in Sections 7.4.23.2–7.4.23.3 of the W978H2KBVX1I datasheet.

W978H2KBVX1I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 134-VFBGA

Packaging:: Tray

Product Status:: Not For New Designs

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2-S4B

Memory Size:: 256Mbit

Memory Organization:: 8M x 32

Memory Interface:: HSUL_12

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 5.5 ns

Voltage - Supply:: 1.14V ~ 1.3V, 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 134-VFBGA (10x11.5)

W978H2KBVX1I FAQ

1.How can I place an order for W978H2KBVX1I through Aetrix?

Please submit a Request for Quotation (RFQ) for W978H2KBVX1I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W978H2KBVX1I reliable?

The price and inventory of W978H2KBVX1I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX1I is usually 5 days.

3.What payment methods are accepted for W978H2KBVX1I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX1I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W978H2KBVX1I?

W978H2KBVX1I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W978H2KBVX1I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W978H2KBVX1I?

For technical support, including W978H2KBVX1I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX1I requirements.

6.How does Aetrix verify that W978H2KBVX1I is sourced from the original manufacturer or authorized distributors?

All W978H2KBVX1I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX1I meets industry standards.

7.What is the process for return or replacement of W978H2KBVX1I?

All W978H2KBVX1I units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX1I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W978H2KBVX1I part is unused and in its original packaging.

Return procedure for W978H2KBVX1I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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