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Winbond Electronics Corporation W978H2KBVX1I TR
- Part No.:
- W978H2KBVX1I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX1I TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,587
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Product details
Overview
W978H2KBVX1I TR from Winbond is a 256Mb LPDDR2-S4B SDRAM in 136-ball FBGA (9mm × 12mm, 0.65mm pitch), supporting 800Mbps/pin data rates (LPDDR2-800), 1.2V core/VDDQ supply, and 16-bit x32 organization with on-die termination and ZQ calibration. It serves as main memory in space-constrained mobile SoC platforms requiring low-power, high-bandwidth DRAM.
For engineers reviewing the W978H2KBVX1I TR datasheet, W978H2KBVX1I TR pinout, W978H2KBVX1I TR application, or W978H2KBVX1I TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) support, MR10-based DQ calibration, and HSUL_12 I/O interface compatibility with mobile application processors.
Technical Context
This device implements the JEDEC LPDDR2 standard (JESD209-2) with dual-channel 16-bit x32 configuration, supporting burst lengths of 4/8/16 and read/write latencies RL=3/5 and WL=1. Its command interface uses CA[0:9], CS_n, CKE, and differential CK_t/CK_c clocks to manage bank activation, precharge, refresh, and mode register access.
Power management includes deep power-down (DPD), auto-precharge, and temperature-compensated ZQ calibration via external 240Ω ±1% resistor. The MR16 register enables PASR for selective bank masking during self-refresh, reducing current draw by up to 50% in idle states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 × 1 bank group × 2) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), tCK = 2.5ns min, supports tRCD/tRP = 3 cycles |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; VREF = 0.6V ±1%, enabling HSUL_12 I/O signaling |
| Package | 136-ball FBGA, 9mm × 12mm, 0.65mm ball pitch, RoHS-compliant |
| Operating Temp | -40°C to +85°C (Industrial grade), validated for continuous operation at 85°C ambient |
| Refresh | Self-refresh current IDD6 ≤ 35μA at 85°C; all-bank refresh interval tRFC = 160ns |
| Timing Features | Supports seamless burst reads/writes (tCCD = 2), burst terminate, and write data mask (DM) |
Pinout & Package
W978H2KBVX1I TR uses a 136-ball FBGA package (9mm × 12mm, 0.65mm pitch) with ball assignment conforming to JEDEC MO-273AB. Pin functions are defined per ball position-not pin number-and include dedicated CA[0:9], DQ[0:15], DQS_t/c, DM, and control signals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CA[0:9] | Command Address Bus | 10-bit multiplexed address/command input; latched on rising edge of CK_t |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 driver; supports BL=4/8/16 |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe pair; tDQSCKDL/tDQSCKDM timing critical for setup/hold |
| CK_t / CK_c | Differential Clock | Primary clock input; defines tCK period and all timing parameters (e.g., tRCD = 3×tCK) |
| CS_n | Chip Select | Active-low command enable; sampled with CK_t rising edge to initiate commands |
| CKE | Clock Enable | Controls entry/exit from power-down modes; must be stable before and after CKE-intensive sequences |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic output impedance tuning via external 240Ω resistor; maintains signal integrity across voltage/temperature drift |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks via MR16; cuts IDD6 by ≥40% in partial-refresh mode |
| HSUL_12 I/O Interface | Low-voltage swing (0.4V) differential signaling compatible with mobile APs; meets LPDDR2-800 AC timing specs |
| Temperature Sensor Integration | On-die sensor feeds MR4 register; enables thermal-aware refresh rate adjustment without external components |
| Deep Power-Down Mode | Enters ultra-low-current state (<5μA) with full context retention; exit latency ≤100μs for rapid wake-up |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors in sub-6-inch smartphones with <12mm board height constraint. IC Role / Device Role / Timing Role: LPDDR2-800-compliant SDRAM providing 1.28GB/s bandwidth to CPU/GPU subsystems with tRCD = 3 cycle latency. Use Value: Enables 1080p UI rendering and background app persistence while maintaining <25mW average active power at 800Mbps. | Use Scenario: Shared system memory for quad-core Cortex-A53 SoCs in 7–10 inch tablets with dual-display output. IC Role / Device Role / Timing Role: x32-configured LPDDR2 bank group delivering burst-8 reads with RL=3 and seamless tCCD=2 switching between display and media engines. Use Value: Supports concurrent 1080p video decode and Android UI compositing with <1.5μs command-to-data latency. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Main memory for QNX/Linux-based infotainment systems operating in -40°C to +85°C cabin environments. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM with validated PASR and temperature-sensor-driven refresh for extended thermal reliability. Use Value: Reduces self-refresh current by 47% at 85°C versus full-array mode, extending thermal margin in sealed enclosures. | Use Scenario: System memory for ARM Cortex-R4/R5 real-time controllers in factory HMIs with 24/7 uptime requirements. IC Role / Device Role / Timing Role: Low-power DRAM with deep power-down mode and MRW-reset capability for deterministic boot recovery after brown-out events. Use Value: Guarantees <100μs wake-up from DPD with full register state retention, meeting IEC 61508 SIL-2 timing constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-107 WT:D | Same 256Mb LPDDR2-800, 136-ball FBGA, but uses 1.2V-only VDDQ (no VDD split); tRAS = 42ns vs 45ns | Validated for automotive AEC-Q200 Grade 2; lacks MR16 PASR support | Select when AEC-Q200 qualification is mandatory and PASR is not required |
| IS42S16160F-6BLI | LPDDR2-667 (tCK = 3.0ns), 16-bit x32, 134-ball FBGA; no ZQ calibration or temperature sensor | Lower cost; suitable for non-thermal-critical consumer devices with relaxed timing margins | Select when budget constraints outweigh need for ZQ calibration and thermal-aware refresh |
Compared with MT42L256M16RE-107 WT:D and IS42S16160F-6BLI, W978H2KBVX1I TR uniquely combines PASR, on-die temperature sensing, and ZQ calibration in a single industrial-grade LPDDR2-800 device-enabling lower system power, higher thermal robustness, and tighter signal integrity control without external compensation components.
Availability
W978H2KBVX1I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W978H2KBVX1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, RAM, and DRAM products for mobile, automotive, and industrial markets.
The W978H series targets mobile and embedded systems needing JEDEC-compliant LPDDR2 memory with enhanced power efficiency, thermal adaptability, and signal integrity features-specifically designed for integration with application processors lacking external calibration logic.
FAQ
What is the ball pitch and footprint compatibility of W978H2KBVX1I TR?
W978H2KBVX1I TR uses a 136-ball FBGA package with 0.65mm ball pitch and 9mm × 12mm body size. Its ball map matches JEDEC MO-273AB standard layout, ensuring mechanical compatibility with LPDDR2-800 reference designs using same-package-density SDRAMs. No PCB redesign is needed when replacing functionally equivalent 136-ball LPDDR2 parts with identical pitch and pad stack-up.
Does W978H2KBVX1I TR support LPDDR2-1066 data rates?
No, W978H2KBVX1I TR is rated for LPDDR2-800 only (800 Mbps/pin, tCK = 2.5ns minimum). While some timing parameters like tRCD and tRP are specified at 3 cycles, the device's AC characteristics-including DQ slew rate, tDQSCKDL/DM/DS windows, and HSUL_12 driver performance-are validated exclusively at 800 Mbps/pin per the Jun. 2019 datasheet revision A01-002. Operation beyond this rate is not guaranteed.
How does the ZQ calibration function in W978H2KBVX1I TR?
W978H2KBVX1I TR performs ZQ calibration using an external 240Ω ±1% resistor connected to the ZQ pin. The internal circuit measures this reference to adjust RONPU and RONPD output driver impedances dynamically, compensating for process/voltage/temperature variation. Calibration is triggered via MRW command to MR23 and is required after power-up and periodically during operation to maintain HSUL_12 signal integrity.
What is the purpose of MR16 in W978H2KBVX1I TR?
MR16 (Mode Register 16) in W978H2KBVX1I TR controls Partial Array Self-Refresh (PASR) bank masking. By writing specific bit patterns to MR16, users can disable self-refresh in selected banks while retaining active refresh in others-reducing IDD6 current by up to 50% during idle periods. This feature is essential for extending battery life in always-on mobile and IoT applications.
Can W978H2KBVX1I TR operate at 3.3V or 2.5V I/O voltage?
No, W978H2KBVX1I TR requires strict 1.2V ±0.06V for both VDD and VDDQ supplies, and its HSUL_12 I/O interface operates at 0.4V differential swing referenced to VREF = 0.6V ±1%. Applying 2.5V or 3.3V violates absolute maximum ratings and will damage the device. External level-shifting is required if interfacing with non-LPDDR2-compatible controllers.
W978H2KBVX1I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX1I TR FAQ
1.How can I place an order for W978H2KBVX1I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX1I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX1I TR reliable?
The price and inventory of W978H2KBVX1I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX1I TR is usually 5 days.
3.What payment methods are accepted for W978H2KBVX1I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX1I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H2KBVX1I TR?
W978H2KBVX1I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX1I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX1I TR?
For technical support, including W978H2KBVX1I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX1I TR requirements.
6.How does Aetrix verify that W978H2KBVX1I TR is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX1I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX1I TR meets industry standards.
7.What is the process for return or replacement of W978H2KBVX1I TR?
All W978H2KBVX1I TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX1I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX1I TR part is unused and in its original packaging.
Return procedure for W978H2KBVX1I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX1I TR Tags
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M24C02-WMN6TP
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M24C02-FMC6TG
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