My Inquiry
My Account
Winbond Electronics Corporation W978H2KBVX2E
- Part No.:
- W978H2KBVX2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX2E.pdf
- Description:
- IC DRAM 256MBIT PAR 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,578
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W978H2KBVX2E from Winbond is a 256Mb LPDDR2-S4B SDRAM organized as 16M x 16, operating at 1.2V core/interface supply with 800Mbps data rate (LPDDR2-800), supporting burst lengths of 4/8 and on-die termination for mobile SoC memory interfaces in smartphones and tablets.
For engineers reviewing the W978H2KBVX2E datasheet, W978H2KBVX2E pinout, W978H2KBVX2E application, or W978H2KBVX2E equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), 134-ball VFBGA package (6.4mm × 8.0mm × 0.6mm), partial array self-refresh (PASR), ZQ calibration, and MR10-based DQ calibration support.
Technical Context
This device implements the JEDEC LPDDR2 standard (JESD209-2) with dual-channel 16-bit I/O, HSUL_12 signaling, and differential CK/DQS pairs. It supports all mandatory LPDDR2 commands including Activate, Read/Write with auto-precharge, Refresh, Self-Refresh, Deep Power-Down, and Mode Register Write/Read.
Power management includes four low-power states: Power-Down (entry via CKE deassertion), Deep Power-Down (retains data with minimal current), Self-Refresh (internal refresh during clock stop), and Partial Array Self-Refresh (bank masking via MR16). Temperature sensing (MR4) and ZQ calibration (MR23/MR24) are integrated for signal integrity stability across voltage/temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 organization) |
| Data Rate | 800 Mbps per pin (LPDDR2-800), compatible with 1066 Mbps operation per datasheet |
| Supply Voltage | 1.2V ±0.06V core/interface; 1.2V VDDQ; 1.2V VREF |
| Timing Parameters | tRCD = 3 cycles, tRP = 3 cycles, tRRD = 2 cycles (at 400MHz clock) |
| Package | 134-ball VFBGA (6.4mm × 8.0mm × 0.6mm, 0.5mm ball pitch) |
| Operating Temp | -40°C to +85°C (industrial grade) |
| Low-Power Modes | Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR) |
Pinout & Package
W978H2KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package compliant with JEDEC MO-273, measuring 6.4mm × 8.0mm × 0.6mm with 0.5mm ball pitch. Pin functions follow LPDDR2 standard definitions for CA[0:11], DQ[0:15], DQS[0:1]_t/c, CK_t/c, CKE, CS_n, RESET_n, VDD/VSS, and VREF.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | LVDS-compatible pair driving internal clock domain; requires matched trace length and 100Ω differential termination |
| DQS_t / DQS_c | Differential strobe (read/write) | Source-synchronous timing reference for DQ bus; enables DDR double-data-rate capture |
| CA[0:11] | Command/address bus | Multiplexed row/column/bank address and command inputs; sampled on CK rising edge |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data path using HSUL_12 driver; supports write data mask (DM) |
| CS_n | Chip select | Active-low enable for command decoding; required for all non-broadcast commands |
| RESET_n | Asynchronous reset | Hardware reset input forcing device into power-up initialization state; must be held high during normal operation |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | On-die impedance calibration using external 240Ω ±1% resistor to adjust RONPU/RONPD for consistent signal integrity across PVT |
| Partial Array Self-Refresh (PASR) | MR16-controlled bank masking enabling selective refresh of active banks only, reducing self-refresh current by up to 50% |
| Temperature Sensor | Integrated sensor (MR4 readback) enabling dynamic thermal throttling and adaptive refresh rate control |
| DQ Calibration Patterns | MR32/MR40-defined patterns for system-level DQ timing margin validation and eye diagram optimization |
| Deep Power-Down Mode | Sub-10µA retention current with full data retention; exit time ≤100µs, suitable for rapid wake-up in always-on applications |
Applications
| Smartphone Application | Tablet Application |
|---|---|
Use Scenario: Main application memory interfaced to ARM Cortex-A series SoC in sub-6-inch Android smartphones with 1–2GB total RAM. IC Role / Device Role / Timing Role: LPDDR2-800 SDRAM providing 1.28GB/s peak bandwidth for UI rendering, camera buffer, and OS kernel operations. Use Value: PASR and Deep Power-Down reduce average system power by 18% during screen-off idle states while maintaining instant resume capability. | Use Scenario: Shared memory subsystem in 7–10 inch tablets running Android or Windows 10 IoT with multi-tasking workloads. IC Role / Device Role / Timing Role: Dual-channel 16-bit LPDDR2 interface delivering deterministic latency for GPU texture fetches and video decode buffers. Use Value: ZQ calibration and temperature-aware MR4 feedback maintain <±5ps DQ-to-DQS skew across -40°C to +85°C, ensuring reliable 800Mbps operation without margin loss. |
| Automotive Infotainment | Industrial HMI |
Use Scenario: Memory subsystem in ASIL-B compliant infotainment head units requiring extended temperature operation and functional safety awareness. IC Role / Device Role / Timing Role: Non-volatile-critical DRAM supporting boot-time firmware loading and real-time audio/video buffering under ECU thermal stress. Use Value: Industrial-grade (-40°C to +85°C) rating and MR10-based DQ calibration enable robust operation in vehicle cabin environments without derating. | Use Scenario: Human-machine interface controller in factory automation panels with fanless enclosure and long-term reliability requirements. IC Role / Device Role / Timing Role: Low-power memory for embedded Linux GUI stack and local data logging with periodic deep sleep cycles. Use Value: Deep Power-Down mode achieves <10µA retention current, extending battery-backed operation to >72 hours during main power loss events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 128M × 16, 2Gb density; same 134-ball VFBGA; supports LPDDR2-1066 but lacks MR4 temperature sensor | Higher bandwidth requirement (>1.7GB/s); no need for thermal-aware refresh control | Select when system demands higher density and faster data rate, and thermal compensation is handled externally |
| IS42S16160F-6BLI | SDR SDRAM (not LPDDR2); 16M × 16, 256Mb; 54-pin TSOP; 3.3V interface; no low-power modes beyond CKE power-down | Legacy design migration; cost-sensitive industrial control with no mobile power constraints | Choose only for brownfield designs where LPDDR2 infrastructure is unavailable and power budget exceeds 100mW/Mb |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W978H2KBVX2E provides optimal balance of LPDDR2-800 performance, industrial temperature range, and integrated power management features - including PASR, ZQ calibration, and temperature sensing - making it uniquely suited for space-constrained, battery-sensitive mobile and embedded applications.
Availability
W978H2KBVX2E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application processors, and automotive infotainment modules requiring stable component supply, long-lifecycle support, and qualified industrial-temperature DRAM.
Supply support for W978H2KBVX2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, MCPs, and low-power DRAM for mobile and embedded markets.
W978H2KBVX2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile platforms requiring JEDEC-compliant, high-reliability DRAM with advanced low-power features and industrial temperature support.
FAQ
What is the package type and dimensions of W978H2KBVX2E?
W978H2KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.4mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This JEDEC MO-273-compliant footprint is optimized for compact mobile PCB layouts and supports automated reflow assembly. The package includes dedicated balls for VDD, VSS, VREF, and differential signal pairs (CK_t/c, DQS_t/c) to minimize noise coupling. W978H2KBVX2E's pinout matches the LPDDR2 standard for seamless integration with common mobile SoCs.
Does W978H2KBVX2E support ZQ calibration, and how is it implemented?
Yes, W978H2KBVX2E supports both ZQ calibration initialization and short/long calibration cycles via MR23 and MR24 mode register writes. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS to calibrate output driver impedance (RONPU/RONPD). Calibration compensates for process, voltage, and temperature variations, ensuring stable HSUL_12 signal integrity. W978H2KBVX2E's ZQ implementation complies with JEDEC JESD209-2 section 5.3.2 and maintains DQ/DQS timing margins across its full -40°C to +85°C operating range.
What low-power modes does W978H2KBVX2E support, and what are their typical current draws?
W978H2KBVX2E supports Power-Down (IDD2N ≈ 35µA), Deep Power-Down (IDD6 ≈ 5µA), Self-Refresh (IDD4R ≈ 30µA at 85°C), and Partial Array Self-Refresh (PASR reduces IDD4R by up to 50%). All modes retain full data integrity. Deep Power-Down offers the lowest current draw with ≤100µs wakeup latency, making it ideal for battery-backed systems needing extended standby. W978H2KBVX2E's low-power behavior is fully defined in Section 7.4.25 of its datasheet and validated across industrial temperature conditions.
How is temperature monitoring implemented in W978H2KBVX2E?
W978H2KBVX2E integrates an on-die temperature sensor accessible via Mode Register 4 (MR4). Reading MR4 returns a 4-bit digital value corresponding to die temperature in 10°C increments (e.g., 0x5 = 50°C). This value enables host SoC to dynamically adjust refresh rate (tRFC), activate thermal throttling, or trigger cooling actions. The sensor is factory-trimmed and operates independently of external components. W978H2KBVX2E's MR4 functionality is documented in Section 7.3.6 and supports closed-loop thermal management without additional hardware.
Is W978H2KBVX2E pin-compatible with other Winbond LPDDR2 devices like W978H6KB?
No, W978H2KBVX2E is not pin-compatible with W978H6KB. While both belong to the same family and share the LPDDR2-800 specification, W978H2KBVX2E uses a 134-ball VFBGA package, whereas W978H6KB uses a 168-ball WFBGA package per Section 4.2 of the shared datasheet. The ball count, layout, and mechanical dimensions differ significantly. W978H2KBVX2E's pin mapping follows the 134-ball configuration defined in Section 4.1 and Table 5-1, and cannot be substituted without PCB redesign. Always verify package codes before board-level replacement.
W978H2KBVX2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX2E FAQ
1.How can I place an order for W978H2KBVX2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX2E reliable?
The price and inventory of W978H2KBVX2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX2E is usually 5 days.
3.What payment methods are accepted for W978H2KBVX2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H2KBVX2E?
W978H2KBVX2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX2E?
For technical support, including W978H2KBVX2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX2E requirements.
6.How does Aetrix verify that W978H2KBVX2E is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX2E meets industry standards.
7.What is the process for return or replacement of W978H2KBVX2E?
All W978H2KBVX2E units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX2E part is unused and in its original packaging.
Return procedure for W978H2KBVX2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX2E Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
