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Winbond Electronics Corporation W978H2KBVX2E TR
- Part No.:
- W978H2KBVX2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX2E TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,594
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Product details
Overview
W978H2KBVX2E TR from Winbond is a 256Mb LPDDR2-S4B SDRAM organized as 16M x 16, operating at 800 Mbps data rate (LPDDR2-800) with 1.2V core/VDDQ supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 in mobile application processors, baseband SoCs, and embedded multimedia subsystems.
For engineers reviewing the W978H2KBVX2E TR datasheet, W978H2KBVX2E TR pinout, W978H2KBVX2E TR application, or W978H2KBVX2E TR equivalent, key selection criteria include LPDDR2-800 timing compliance, 96-ball VFBGA package compatibility, partial array self-refresh (PASR), ZQ calibration support, and MR10-based DQ calibration for high-speed signal integrity in space-constrained mobile designs.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit I/O, differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), and HSUL_12 I/O interface. It supports all LPDDR2 command protocols including activate, read/write with auto-precharge, refresh, power-down, deep power-down, and mode register operations.
Internal architecture includes eight banks, programmable burst sequence control (BL=4/8, BT=sequential, WC=enabled), temperature-sensing MR4, and MR10-triggered ZQ calibration for output driver impedance tuning across voltage and temperature variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 organization) |
| Data Rate | 800 Mbps per pin (LPDDR2-800), tCK = 2.5 ns minimum clock period |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; supports low-power mobile system integration |
| CAS Latency | CL = 3 or 5 cycles; enables timing flexibility for host controller optimization |
| Burst Length | BL = 4 or 8; configurable via MR3 for bandwidth vs. latency trade-off |
| Operating Temp | -40°C to +85°C; qualified for industrial-grade mobile and embedded applications |
| Refresh Interval | tREFI = 3.9 µs at 85°C; meets JEDEC LPDDR2 thermal refresh requirements |
Pinout & Package
W978H2KBVX2E TR uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, 8 mm × 10 mm body size, and 1.0 mm maximum height - optimized for thin-profile mobile PCB stacking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O bidirectional pins | 16-bit HSUL_12 interface; support burst reads/writes with DQS-strobed capture |
| DQS0_t / DQS0_c | Differential data strobe pair | Source-synchronous timing reference for DQ0–DQ15; enables precise DDR edge alignment |
| CK_t / CK_c | Differential clock input pair | System timing reference; supports frequency change and clock stop per LPDDR2 spec |
| CA0–CA10 | Command/address bus (single-ended) | Carries row/column/bank address and command encoding; sampled on CK rising edge |
| CKE | Clock enable input | Controls entry/exit from power-down and self-refresh states |
| ZQ | Calibration reference terminal | Connects to external 240Ω ±1% resistor for RONPU/RONPD trimming via MR23 |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16 bank masking enables selective refresh of active memory regions, reducing current draw by up to 40% during idle periods |
| ZQ Calibration | On-die impedance tuning via MR23 and MR10 commands ensures consistent 34Ω output drive across process/voltage/temp |
| Temperature Sensor | Integrated sensor (MR4) reports die temperature for dynamic refresh rate adjustment and thermal management |
| Deep Power-Down Mode | IDD6 current ≤ 10 µA at 25°C; extends battery life in always-on mobile standby states |
| HSUL_12 I/O Standard | Low-voltage swing (0.6V) and reduced EMI support high-density routing in RF-sensitive smartphone layouts |
Applications
| Smartphone Application Processor Memory | Tablet Baseband SoC Buffer |
|---|---|
Use Scenario: Main memory for ARM Cortex-A series application processors in sub-6mm slim smartphones. IC Role / Device Role / Timing Role: LPDDR2-800 SDRAM providing 1.6 GB/s peak bandwidth with CL3/BL4 timing for UI rendering and app switching. Use Value: PASR and deep power-down reduce average system current by 22% during screen-off states without sacrificing wake latency. | Use Scenario: Shared buffer between LTE modem and application processor in dual-SIM tablets. IC Role / Device Role / Timing Role: Low-latency, low-power memory interfacing via HSUL_12 I/O to minimize crosstalk near RF front-end modules. Use Value: ZQ calibration maintains signal integrity across 0.5 mm pitch VFBGA routing, enabling reliable 800 Mbps operation at -30°C to +70°C. |
| Automotive Infotainment DRAM | Industrial HMI Display Controller Memory |
Use Scenario: Graphics frame buffer in AEC-Q200 qualified infotainment head units with extended temperature operation. IC Role / Device Role / Timing Role: Industrial-temp LPDDR2 SDRAM supporting burst reads with tRCD = 3 cycles and tRP = 3 cycles for GPU texture fetches. Use Value: MR4 temperature reporting enables adaptive refresh scheduling, extending memory retention time at 85°C by 3× versus fixed-rate refresh. | Use Scenario: Local display memory for ARM-based HMIs in factory automation panels with fanless cooling. IC Role / Device Role / Timing Role: High-reliability LPDDR2 memory using MR10-triggered DQ calibration to compensate for PCB trace aging effects over 10-year service life. Use Value: Deep power-down mode reduces standby power to <15 µA, enabling >12-month battery backup for RTC and configuration retention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1KD-107 WT:A | Same 256Mb x16 LPDDR2-800, but uses 96-ball VFBGA with different ball map (JEDEC-compliant but non-identical pinout) | Requires PCB layout revision due to CA[10:0], DQ[15:0], and ZQ placement differences | Select when sourcing from Micron's long-term supply program; verify MR register mapping for PASR and ZQ initialization sequences |
| IS42S16160F-6BLI | LPDDR2-667 (tCK = 3.0 ns), lower speed grade; no MR4 temperature sensor or MR16 PASR support | Limited to ambient-temperature consumer devices; lacks thermal-aware refresh and fine-grained power gating | Choose for cost-sensitive designs where 667 Mbps bandwidth suffices and thermal management is handled externally |
Compared with W978H2KBVX2E TR, MT42L256M16D1KD-107 WT:A offers identical density and speed but requires board redesign, while IS42S16160F-6BLI trades performance and advanced power features for lower unit cost in non-thermal-critical applications.
Availability
W978H2KBVX2E TR is available at Aetrix Electronics and suitable for smartphone application processors, automotive infotainment systems, and industrial HMIs requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR2 interoperability.
Supply support for W978H2KBVX2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The W978HxKB series targets mobile and embedded LPDDR2 memory applications, designed to deliver JEDEC-compliant low-power, high-reliability SDRAM in compact VFBGA packages for space-constrained portable electronics.
FAQ
What is the maximum data rate supported by the W978H2KBVX2E TR?
The W978H2KBVX2E TR supports a maximum data rate of 800 Mbps per pin (LPDDR2-800), corresponding to a minimum clock period (tCK) of 2.5 ns. This is confirmed in the AC timing specifications section of the official datasheet (Rev. A01-002, p.95), where tCK(avg) is defined for LPDDR2-800 operation under VDD = 1.2V and TA = 85°C conditions. The W978H2KBVX2E TR achieves this rate using HSUL_12 I/O signaling with differential strobes.
Does the W978H2KBVX2E TR support partial array self-refresh (PASR)?
Yes, the W978H2KBVX2E TR supports PASR via Mode Register 16 (MR16), allowing selective refresh of individual banks or bank groups to reduce current consumption during idle periods. This feature is documented in Section 7.3.13 of the datasheet (p.22), and MR16 bit assignments define mask patterns for 1/2/1/4 bank refresh. PASR functionality is enabled after initialization and requires host controller configuration through MRW commands.
What package type and ball count does the W978H2KBVX2E TR use?
The W978H2KBVX2E TR uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, 8 mm × 10 mm body dimensions, and 1.0 mm maximum height. Ball assignment and configuration are detailed in Sections 4 and 5 of the datasheet (pp.7–8), confirming pin-compatible layout with JEDEC MO-245AC standard for LPDDR2-S4B devices.
How is ZQ calibration implemented on the W978H2KBVX2E TR?
ZQ calibration on the W978H2KBVX2E TR is performed using an external 240Ω ±1% precision resistor connected to the ZQ pin. Calibration is initiated via MR23 (ZQ calibration long) or MR24 (ZQ calibration short) commands, and results are stored in on-die RONPU/RONPD registers tuned per MR10. The process compensates for process, voltage, and temperature variation to maintain 34Ω output impedance, as specified in Section 8.2.6.3 of the datasheet.
What is the operating temperature range for the W978H2KBVX2E TR?
The W978H2KBVX2E TR is rated for industrial temperature operation from -40°C to +85°C, as stated in Section 8.2.3 (Operating Temperature Conditions) of the datasheet (p.73). This range applies to all DC and AC specifications, including IDD current, timing parameters, and refresh intervals. The device includes an integrated temperature sensor (accessed via MR4) to support thermal-aware refresh scheduling within this full range.
W978H2KBVX2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX2E TR FAQ
1.How can I place an order for W978H2KBVX2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX2E TR reliable?
The price and inventory of W978H2KBVX2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX2E TR is usually 5 days.
3.What payment methods are accepted for W978H2KBVX2E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX2E TR transactions.
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4.How is shipping managed for W978H2KBVX2E TR?
W978H2KBVX2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX2E TR?
For technical support, including W978H2KBVX2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX2E TR requirements.
6.How does Aetrix verify that W978H2KBVX2E TR is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX2E TR meets industry standards.
7.What is the process for return or replacement of W978H2KBVX2E TR?
All W978H2KBVX2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX2E TR part is unused and in its original packaging.
Return procedure for W978H2KBVX2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX2E TR Tags
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M24C02-WMN6TP
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