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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W978H2KBVX2I

Name: W978H2KBVX2I
Brand: Winbond Electronics Corporation
SKU: W978H2KBVX2I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W978H2KBVX2I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 134-VFBGA

Datasheet:: W978H2KBVX2I.pdf

Description:: IC DRAM 256MBIT PAR 134VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W978H2KBVX2I from Winbond is a 256Mb LPDDR2 SDRAM organized as 16M x 16, operating at 1.2V core/interface supply with 800 Mbps data rate per pin (LPDDR2-800), supporting burst lengths of 4/8 and auto-precharge in mobile application processors and baseband SoCs.

For engineers reviewing the W978H2KBVX2I datasheet, W978H2KBVX2I pinout, W978H2KBVX2I application, or W978H2KBVX2I equivalent, key selection criteria include VFBGA-134 package compatibility, tRCD/tRP = 3 cycles timing compliance, partial array self-refresh (PASR) support, and HSUL_12 I/O interface for low-power mobile memory subsystems.

Technical Context

This device implements the JEDEC LPDDR2-S4B standard with dual-channel 16-bit data bus, on-die termination calibrated via ZQ, and mode register programmability for burst type, read/write latency (RL=3/WL=1), and temperature-sensing configuration. It supports seamless burst reads/writes with tCCD = 2 and deep power-down entry under CKE control.

Functional operation includes bank-interleaved activation, all-bank refresh, and MRW/MRR commands for runtime configuration. The device uses differential CK_t/CK_c and DQS_t/DQS_c signaling with defined cross-point voltage and slew-rate constraints to meet LPDDR2-800 AC timing windows including tDQSCKmin = –0.25tCK and tDQSCKmax = +0.25tCK.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	LPDDR2 SDRAM, JEDEC-compliant S4B specification
Capacity & Organization	256Mb / 16M words × 16 bits; supports x16 configuration only
Data Rate	800 Mbps per pin (LPDDR2-800); requires tCK = 2.5 ns clock period
Supply Voltages	VDD/VDDQ = 1.2V ±0.06V; VREF = 0.6V ±1% DC tolerance
Timing Parameters	tRCD = tRP = 3 × tCK; tRRD = 2 × tCK; tCCD = 2 × tCK
Power Modes	Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR)
I/O Interface	HSUL_12 single-ended CA/CS_n/CKE; differential CK_t/c and DQS_t/c

Pinout & Package

W978H2KBVX2I is packaged in a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) with 0.4 mm ball pitch, 8.0 mm × 10.5 mm body size, and standard LPDDR2 ball map per JEDEC MO-277AA.

Pin/Terminal	Circuit Role	Design Meaning
DQ0–DQ15	Data I/O bidirectional pins	16-bit data bus using HSUL_12 drivers; require matched trace length and on-die termination calibration
DQS0_t / DQS0_c	Differential data strobe pair	Source-synchronous capture of DQ signals; tDQSCK window ±0.25tCK must be met for reliable read capture
CK_t / CK_c	Differential clock input	System timing reference; defines tCK = 2.5 ns for LPDDR2-800 operation; requires controlled impedance routing
CA0–CA12	Command/address inputs	Multiplexed row/column/bank address and command encoding; sampled on CK_t rising edge
CS_n	Chip select	Active-low enable for command decoding; synchronous with CK_t edge; deassertion halts command acceptance
CKE	Clock enable	Controls entry/exit from Power-Down and Self-Refresh; low for > tCKE minimum holds device in low-power state
ZQ	Calibration reference terminal	Connects to external 240Ω ±1% resistor to ground; enables RONPU/RONPD output driver calibration

Key Features

Feature	Design Value
Partial Array Self-Refresh (PASR)	Reduces self-refresh current up to 50% by masking inactive banks via MR16, critical for battery-constrained devices
ZQ Calibration	Dynamic adjustment of pull-up/pull-down output impedances using external 240Ω resistor, maintaining signal integrity across voltage/temperature
Temperature Sensor	On-die thermal monitor accessible via MR4; enables system-level thermal throttling without external sensors
Burst Length Flexibility	Configurable BL=4 or BL=8 via MR3; supports optimized bandwidth vs. latency trade-offs in multimedia workloads
Deep Power-Down Mode	Ultra-low IDD6 current (<10 µA typical) with fast wake-up (tDPD = 500 ns max), ideal for intermittent sensor-data logging

Applications

Smartphone Application Processor Memory	Tablet Baseband SoC Buffer
Use Scenario: Main memory for ARM-based application processors running Android OS with multi-tasking and GPU-accelerated UI rendering. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 1.28 GB/s peak bandwidth to CPU/GPU via 16-bit HSUL_12 interface synchronized to 400 MHz CK. Use Value: PASR and Deep Power-Down reduce average system power by >30% during screen-off and background app suspension states.	Use Scenario: Shared buffer between LTE modem and application processor in dual-SoC tablet architecture requiring low-latency inter-processor communication. IC Role / Device Role / Timing Role: Coherent memory buffer supporting burst reads/writes with tCCD = 2 and seamless RL=3/WL=1 timing for protocol stack handshaking. Use Value: Differential CK/DQS signaling and tDQSCK ±0.25tCK tolerance ensure reliable data capture at 800 Mbps despite PCB crosstalk in dense RF/baseband layouts.
Automotive Infotainment Head Unit	Industrial HMI Controller
Use Scenario: Runtime memory for QNX-based infotainment system with navigation, voice recognition, and video playback functions. IC Role / Device Role / Timing Role: Temperature-rated (-40°C to +85°C) LPDDR2 memory supporting MR4-based thermal monitoring and PASR to manage junction temperature in sealed enclosures. Use Value: On-die temperature sensing eliminates need for discrete thermal ICs, reducing BOM count and layout area in space-constrained dashboards.	Use Scenario: Local memory for ARM Cortex-A9 HMI controller managing touch interface, real-time PLC communication, and local web server. IC Role / Device Role / Timing Role: Low-voltage 1.2V memory enabling direct integration with 1.2V FPGA I/O banks and PMIC rails without level-shifting. Use Value: HSUL_12 interface compatibility with FPGA I/O standards simplifies PCB routing and reduces signal integrity validation effort in industrial-grade designs.

Smartphone Application Processor Memory

Tablet Baseband SoC Buffer

Use Scenario: Main memory for ARM-based application processors running Android OS with multi-tasking and GPU-accelerated UI rendering.

IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 1.28 GB/s peak bandwidth to CPU/GPU via 16-bit HSUL_12 interface synchronized to 400 MHz CK.

Use Value: PASR and Deep Power-Down reduce average system power by >30% during screen-off and background app suspension states.

Use Scenario: Shared buffer between LTE modem and application processor in dual-SoC tablet architecture requiring low-latency inter-processor communication.

IC Role / Device Role / Timing Role: Coherent memory buffer supporting burst reads/writes with tCCD = 2 and seamless RL=3/WL=1 timing for protocol stack handshaking.

Use Value: Differential CK/DQS signaling and tDQSCK ±0.25tCK tolerance ensure reliable data capture at 800 Mbps despite PCB crosstalk in dense RF/baseband layouts.

Automotive Infotainment Head Unit

Industrial HMI Controller

Use Scenario: Runtime memory for QNX-based infotainment system with navigation, voice recognition, and video playback functions.

IC Role / Device Role / Timing Role: Temperature-rated (-40°C to +85°C) LPDDR2 memory supporting MR4-based thermal monitoring and PASR to manage junction temperature in sealed enclosures.

Use Value: On-die temperature sensing eliminates need for discrete thermal ICs, reducing BOM count and layout area in space-constrained dashboards.

Use Scenario: Local memory for ARM Cortex-A9 HMI controller managing touch interface, real-time PLC communication, and local web server.

IC Role / Device Role / Timing Role: Low-voltage 1.2V memory enabling direct integration with 1.2V FPGA I/O banks and PMIC rails without level-shifting.

Use Value: HSUL_12 interface compatibility with FPGA I/O standards simplifies PCB routing and reduces signal integrity validation effort in industrial-grade designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L128M16D1KJ-107 IT	Same 256Mb x16 LPDDR2-800, but uses 168-ball WFBGA (JEDEC MO-277AB); tRCD/tRP = 4 cycles	Requires PCB redesign due to larger footprint and different ball map; higher timing margin eases timing closure in noisy environments	Select when board layout allows 168-ball package and relaxed tRCD/tRP timing improves design robustness
IS42S16160F-6BLI	128Mb capacity (half density); same 134-ball VFBGA; LPDDR2-667 (tCK = 3.0 ns); no PASR or temperature sensor	Limited to lower-bandwidth applications; lacks advanced power management features needed for extended battery life	Select only for cost-sensitive, non-battery-powered industrial HMIs where 128Mb suffices and thermal monitoring is unnecessary

Compared with MT42L128M16D1KJ-107 IT and IS42S16160F-6BLI, W978H2KBVX2I delivers full 256Mb density in the compact 134-ball VFBGA, tighter tRCD/tRP = 3-cycle timing for higher sustained bandwidth, and integrated PASR/temperature sensing-making it optimal for space- and power-constrained mobile and automotive designs where feature completeness matters.

Availability

W978H2KBVX2I is available at Aetrix Electronics and suitable for smartphone application processors, tablet baseband SoCs, automotive infotainment head units, and industrial HMI controllers requiring stable component supply across long production lifecycles.

Supply support for W978H2KBVX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W978H series targets mobile and automotive LPDDR2 applications, designed specifically to meet JEDEC S4B requirements with enhanced power management (PASR, Deep Power-Down) and system-level features (on-die temperature sensor, ZQ calibration) for battery-operated and thermally constrained platforms.

FAQ

What is the package type and ball count for W978H2KBVX2I?

W978H2KBVX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package conforming to JEDEC MO-277AA, with 0.4 mm ball pitch and 8.0 mm × 10.5 mm body dimensions. This matches the LPDDR2-S4B standard layout and is distinct from the 168-ball WFBGA variant used in related W978H6KB devices.

Does W978H2KBVX2I support partial array self-refresh (PASR)?

Yes, W978H2KBVX2I supports PASR via Mode Register 16 (MR16), allowing selective self-refresh of active memory banks while masking idle ones. This feature reduces self-refresh current by up to 50%, directly extending battery life in portable devices where memory usage is bursty and non-uniform.

What are the key timing parameters for W978H2KBVX2I at LPDDR2-800 speed?

At LPDDR2-800 (tCK = 2.5 ns), W978H2KBVX2I specifies tRCD = tRP = 3 × tCK = 7.5 ns, tRRD = 2 × tCK = 5.0 ns, and tCCD = 2 × tCK = 5.0 ns. These tight timings enable high-bandwidth operation while maintaining JEDEC S4B compliance and interoperability with compatible controllers.

How does ZQ calibration function on W978H2KBVX2I?

ZQ calibration on W978H2KBVX2I adjusts internal pull-up (RONPU) and pull-down (RONPD) output driver impedances using an external 240Ω ±1% resistor connected to the ZQ pin. Calibration occurs at power-up and can be re-triggered via MRW command to maintain signal integrity across voltage and temperature variations.

Is W978H2KBVX2I rated for automotive temperature range?

Yes, W978H2KBVX2I carries the "I" suffix indicating industrial temperature grade (–40°C to +85°C), validated per JEDEC JESD22-A104. It includes an on-die temperature sensor (accessible via MR4) and supports PASR for thermal-aware power management-making it suitable for automotive infotainment and ADAS auxiliary systems.

W978H2KBVX2I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 134-VFBGA

Packaging:: Tray

Product Status:: Not For New Designs

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2

Memory Size:: 256Mbit

Memory Organization:: 8M x 32

Memory Interface:: Parallel

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: -

Voltage - Supply:: 1.14V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 134-VFBGA (10x11.5)

W978H2KBVX2I FAQ

1.How can I place an order for W978H2KBVX2I through Aetrix?

Please submit a Request for Quotation (RFQ) for W978H2KBVX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W978H2KBVX2I reliable?

The price and inventory of W978H2KBVX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX2I is usually 5 days.

3.What payment methods are accepted for W978H2KBVX2I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX2I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W978H2KBVX2I?

W978H2KBVX2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W978H2KBVX2I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W978H2KBVX2I?

For technical support, including W978H2KBVX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX2I requirements.

6.How does Aetrix verify that W978H2KBVX2I is sourced from the original manufacturer or authorized distributors?

All W978H2KBVX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX2I meets industry standards.

7.What is the process for return or replacement of W978H2KBVX2I?

All W978H2KBVX2I units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX2I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W978H2KBVX2I part is unused and in its original packaging.

Return procedure for W978H2KBVX2I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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