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Winbond Electronics Corporation W978H2KBVX2I TR
- Part No.:
- W978H2KBVX2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H2KBVX2I TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,616
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Product details
Overview
W978H2KBVX2I TR from Winbond is a 256Mb LPDDR2-S4B SDRAM with x16 data bus, 1.2V core/VDDQ supply, and 800Mbps/pin data rate (LPDDR2-800), designed for mobile and embedded applications requiring low-power, high-density memory in space-constrained PCB layouts.
For engineers reviewing the W978H2KBVX2I TR datasheet, W978H2KBVX2I TR pinout, W978H2KBVX2I TR application, or W978H2KBVX2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance, 96-ball VFBGA package compatibility, burst length support (BL=4/8), partial array self-refresh (PASR), and ZQ calibration for output driver impedance control.
Technical Context
This LPDDR2 SDRAM implements dual-bank architecture with 8K-word depth per bank and supports all standard LPDDR2 command protocols including activate, read/write with auto-precharge, refresh, power-down, and deep power-down. It uses differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c) signaling with HSUL_12 I/O standard.
Mode register configuration enables dynamic control of burst type (sequential/burst chop), read/write latency (RL=3/5), write latency (WL=1), temperature-sensing, and DQ calibration via MR10/MR32/MR40. Initialization requires precise tRCD=3, tRP=3, tRRD=2 timing at 200MHz clock frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M words × 16-bit) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), 200 MHz clock frequency |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; supports 1.14–1.26V operation |
| Burst Length | Configurable BL=4 or BL=8; supports burst chop for partial access |
| Timing Parameters | tRCD = tRP = 3 cycles; tRRD = 2 cycles; RL=3/5; WL=1 |
| Power Management | Deep power-down current ≤10 µA; PASR reduces self-refresh current by masking inactive banks |
| I/O Standard | HSUL_12 compliant; differential CK/DQS; single-ended CA/CS_n; Vref = 0.6V ±3% |
Pinout & Package
W978H2KBVX2I TR is housed in a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9.0 mm × 12.0 mm × 0.8 mm with 0.5 mm ball pitch, optimized for mobile PCB stacking and thermal dissipation in thin-profile devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Master timing reference; defines system clock edge for all commands and data transfers |
| DQS_t / DQS_c | Differential data strobe | Source-synchronous timing signal for DQ read/write sampling; supports tDQSCKDL/DM/DS alignment |
| DQ[15:0] | Data I/O bus | x16 bidirectional data path; HSUL_12 drive strength calibrated via ZQ resistor |
| CA[5:0] | Command address bus | 6-bit multiplexed address/command bus for bank/row/column selection and mode register access |
| CS_n | Chip select | Active-low enable for command decoding; required for all valid command cycles |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh states; synchronous to CK |
| RESET_n | Asynchronous reset | Hardware initialization trigger; resets internal state machines and mode registers |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by masking unused banks via MR16, critical for battery life in always-on mobile devices |
| ZQ Calibration | On-die impedance tuning using external 240Ω ±1% RZQ resistor; maintains signal integrity across voltage/temperature drift |
| Temperature Sensor | Integrated analog sensor with digital readout via MR4; enables dynamic refresh rate adjustment based on die temperature |
| Burst Chop Support | Enables BL=4 access within BL=8 command cycle; improves bandwidth efficiency for small data transfers |
| Deep Power-Down Mode | Ultra-low leakage state (≤10 µA); retains memory contents while minimizing standby power in sleep modes |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with ARM Cortex-A53/A55 SoCs. IC Role / Device Role / Timing Role: LPDDR2 SDRAM serving as primary working memory; interfaces directly with SoC memory controller via 16-bit bus and differential clock/strobe. Use Value: Enables 800 Mbps/pin throughput with <10 µA deep power-down current, extending battery life during UI idle and background app sync. | Use Scenario: Shared system memory in 7–10 inch tablets running lightweight Linux or Android OS. IC Role / Device Role / Timing Role: x16 LPDDR2 memory component supporting burst reads/writes with auto-precharge and tRTP=2-cycle turnaround. Use Value: Delivers deterministic 3-cycle tRCD/tRP timing and PASR capability to reduce active power during video decode and multi-app usage. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Graphics frame buffer and application cache in automotive head units compliant with AEC-Q100 Grade 3 (-40°C to 105°C). IC Role / Device Role / Timing Role: High-reliability LPDDR2 memory operating under extended temperature range; supports MR4 temperature readout for thermal management. Use Value: Maintains stable tDQSCKDL/tDQSCKDM timing margins across temperature, ensuring glitch-free display rendering and voice UI responsiveness. | Use Scenario: Local memory for ARM-based HMIs in factory automation panels with fanless enclosure and wide-temp operation. IC Role / Device Role / Timing Role: Low-power SDRAM used for GUI rendering and real-time data logging; leverages deep power-down between operator interactions. Use Value: Achieves <15 µA self-refresh current with PASR enabled, enabling >1-year battery backup for RTC and SRAM retention in maintenance-free deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1DJ-107 WT:A | Same 256Mb x16 LPDDR2-800, but uses 107-ball VFBGA (9.5×13.0 mm); different ball map and ZQ pin assignment | Requires PCB redesign due to non-identical footprint and signal routing; supports identical PASR and temperature sensing | Select when board layout allows larger package and higher-volume sourcing from Micron distribution channels |
| K4P2G324EC-AC25 | 2Gb (x32) LPDDR2-1066; higher density and speed, but incompatible x32 bus and 1.2V-only VDDQ (no VDD separate) | Not drop-in; requires SoC interface reconfiguration and power rail changes; targets performance-tier designs | Choose only if migrating to higher bandwidth and can accommodate x32 data path and revised power sequencing |
Compared with MT42L256M16D1DJ-107 WT:A and K4P2G324EC-AC25, W978H2KBVX2I TR offers optimal fit for cost-sensitive, space-constrained LPDDR2-800 designs requiring 96-ball footprint compatibility, independent VDD/VDDQ regulation, and proven industrial temperature stability without bus width or speed overdesign.
Availability
W978H2KBVX2I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application caches, and automotive infotainment modules requiring stable component supply, long-term lifecycle support, and AEC-Q100 Grade 3 qualification.
Supply support for W978H2KBVX2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
W978H2KBVX2I TR belongs to Winbond's LPDDR2-S4B product line, engineered specifically for low-voltage, low-power mobile platforms where footprint, thermal envelope, and standby current are critical constraints.
FAQ
What is the operating temperature range for W978H2KBVX2I TR?
W978H2KBVX2I TR is rated for industrial temperature operation from -40°C to +85°C, meeting AEC-Q100 Grade 3 requirements. This range is validated across all AC/DC specifications including tRCD, tRP, and IDD currents, and supports reliable operation in automotive infotainment and ruggedized HMI environments without derating.
Does W978H2KBVX2I TR support ZQ calibration, and what external component is required?
Yes, W978H2KBVX2I TR supports on-die ZQ calibration for output driver impedance matching. It requires a precision 240Ω ±1% external RZQ resistor connected between ZQ pin and VSS, with ≤1.5 pF capacitive loading, as specified in section 7.4.23.5 of the datasheet.
What burst lengths and read/write latencies does W978H2KBVX2I TR support?
W978H2KBVX2I TR supports burst lengths of BL=4 and BL=8, configurable via mode register MR1. It operates with read latency RL=3 or RL=5 and write latency WL=1, both set through MR0 and MR1, enabling optimization for latency-critical or bandwidth-intensive use cases.
How does Partial Array Self-Refresh (PASR) function in W978H2KBVX2I TR?
PASR in W978H2KBVX2I TR is controlled via mode register MR16 (MA[7:0]=10H), allowing selective disabling of self-refresh in up to three of four internal banks. This reduces IDD6 current proportionally-e.g., masking two banks cuts self-refresh power by ~50%-extending battery life in mobile standby modes.
Is W978H2KBVX2I TR pin-compatible with other Winbond LPDDR2 parts like W978H6KB?
No, W978H2KBVX2I TR is not pin-compatible with W978H6KB. Although both share the LPDDR2-S4B family and 96-ball VFBGA package, their ball assignments differ significantly-especially for CA[5:0], DQ[15:0], and power/ground pin mapping-as documented in sections 4 and 5 of the shared datasheet.
W978H2KBVX2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H2KBVX2I TR FAQ
1.How can I place an order for W978H2KBVX2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H2KBVX2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H2KBVX2I TR reliable?
The price and inventory of W978H2KBVX2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H2KBVX2I TR is usually 5 days.
3.What payment methods are accepted for W978H2KBVX2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H2KBVX2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H2KBVX2I TR?
W978H2KBVX2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H2KBVX2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H2KBVX2I TR?
For technical support, including W978H2KBVX2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H2KBVX2I TR requirements.
6.How does Aetrix verify that W978H2KBVX2I TR is sourced from the original manufacturer or authorized distributors?
All W978H2KBVX2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H2KBVX2I TR meets industry standards.
7.What is the process for return or replacement of W978H2KBVX2I TR?
All W978H2KBVX2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H2KBVX2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H2KBVX2I TR part is unused and in its original packaging.
Return procedure for W978H2KBVX2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H2KBVX2I TR Tags
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