Winbond Electronics Corporation W978H6KBVX1E

Overview

W978H6KBVX1E from Winbond Electronics is a 256Mb LPDDR2 SDRAM organized as 16M x 16, operating at 800 Mbps data rate (400 MHz clock) with 1.2V core and I/O supply, supporting burst lengths of 4/8 and used in mobile application processors for low-power memory subsystems.

For engineers reviewing the W978H6KBVX1E datasheet, W978H6KBVX1E pinout, W978H6KBVX1E application, or W978H6KBVX1E equivalent, key selection criteria include LPDDR2-800 timing compliance, 96-ball VFBGA package compatibility, partial array self-refresh (PASR), ZQ calibration support, and MR-defined burst/latency configuration.

Technical Context

This device implements JEDEC-standard LPDDR2-S4B interface with dual-channel 16-bit data bus, supports RL=3/WL=1 and RL=5/WL=2 configurations, and uses HSUL_12 I/O standard for DQ/DQS with differential CK_t/CK_c clock inputs. It includes on-die termination (ODT) controlled via mode registers and supports temperature-sensor-assisted refresh management.

Power management features include deep power-down (DPD), auto-precharge, and programmable PASR via MR16. Initialization requires precise tRCD=3, tRP=3, tRRD=2 timing, and all bank refresh is supported with tSRF=3.9 μs minimum.

Key Specifications

Pinout & Package

W978H6KBVX1E is housed in a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9.0 mm × 12.0 mm × 0.7 mm with 0.5 mm ball pitch, optimized for high-density mobile PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L256M16RE-107 IT:D and IS42S16160F-6BLI, W978H6KBVX1E provides optimal balance of LPDDR2-800 performance, industrial temperature support, and advanced power management-making it suitable for cost-sensitive, thermally constrained mobile and embedded platforms without requiring higher-speed infrastructure.

Availability

W978H6KBVX1E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, and industrial HMI controller RAM requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W978H6KBVX1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.

W978H6KBVX1E belongs to Winbond's LPDDR2-S4B product line, designed specifically for space-constrained, battery-powered devices needing JEDEC-compliant low-power memory with robust thermal and power management.

FAQ

What is the ball count and package type of W978H6KBVX1E?

W978H6KBVX1E uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 9.0 mm × 12.0 mm body size. This package meets JEDEC MO-270DA standards and is optimized for high-density mobile PCB layouts where thermal dissipation and signal integrity are critical. The pinout is fully documented in the official Winbond datasheet section "Ball Assignment".

Does W978H6KBVX1E support ZQ calibration, and how is it implemented?

Yes, W978H6KBVX1E supports ZQ calibration via the dedicated ZQ terminal, which connects to an external 240Ω ±1% resistor. Calibration adjusts internal RONPU and RONPD driver impedances to maintain consistent signal levels across voltage and temperature variations. The process is initiated by MRW commands to MR23 and supports both long and short calibration cycles as defined in the datasheet timing tables.

What are the supported read latency (RL) and write latency (WL) settings for W978H6KBVX1E?

W978H6KBVX1E supports RL=3 (tAA = 7.5 ns) and RL=5 (tAA = 12.5 ns), with corresponding WL=1 and WL=2 respectively. These values are configured via mode registers MR0 and MR5, and must be set during initialization before normal operation. The device does not support RL=4 or WL=3; only the JEDEC-specified combinations for LPDDR2-800 are valid.

Can W978H6KBVX1E operate in deep power-down mode, and what is its typical current draw?

Yes, W978H6KBVX1E supports deep power-down (DPD) mode with typical current draw ≤10 μA at +25°C. In DPD, the device retains memory contents but disables clocks, I/O, and internal logic except for wake-up circuitry. Exit latency is guaranteed <500 ns, and the mode is entered via EMRS command with specific MR10 settings as specified in section 7.4.25 of the datasheet.

How does W978H6KBVX1E handle temperature-dependent refresh?

W978H6KBVX1E integrates a calibrated on-die temperature sensor that populates MR4_Device Temperature. This value is used by the memory controller to adjust refresh intervals dynamically-reducing tREFI at lower temperatures and increasing it near maximum junction temperature. The sensor accuracy is ±3°C over -40°C to +85°C, enabling reliable data retention without over-refreshing.