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Winbond Electronics Corporation W978H6KBVX1E TR
- Part No.:
- W978H6KBVX1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H6KBVX1E TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,674
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Product details
Overview
W978H6KBVX1E TR from Winbond is a 256Mb LPDDR2-S4B SDRAM with x16 data bus, 1.2V core/VDDQ supply, and 800Mbps/pin (400MHz clock) data rate, used as main memory in space-constrained mobile SoC platforms including smartphones and tablets.
For engineers reviewing the W978H6KBVX1E TR datasheet, W978H6KBVX1E TR pinout, W978H6KBVX1E TR application, or W978H6KBVX1E TR equivalent, key selection criteria include LPDDR2 compliance, 96-ball VFBGA package, tRCD/tRP = 3 cycles, partial array self-refresh support, and ZQ calibration for output impedance control.
Technical Context
This LPDDR2 device implements dual-bank architecture with 13-bit row address, 10-bit column address, and 3-bit bank address. It supports burst lengths of 4 and 8, read latencies of 3 and 5, and write latencies of 1, all compliant with JEDEC JESD209-2 specification.
Power management includes deep power-down, auto-precharge, and partial array self-refresh (PASR) controlled via MR16. Timing calibration uses on-die ZQ resistor matching to external 240Ω ±1% reference, with DQ/DQS timing referenced to CK/CK# differential clocks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, JEDEC-compliant low-power double-data-rate interface |
| Capacity & Organization | 256Mb (16M × 16), x16 data bus configuration |
| Data Rate | 800 Mbps/pin (400 MHz clock frequency, tCK = 2.5 ns) |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.2V ±0.06V; VREF = 0.6V ±1% (DC) |
| Timing Parameters | tRCD = tRP = 3 × tCK; tRRD = 2 × tCK; tCCD = 2 × tCK; RL = 3 or 5; WL = 1 |
| Power Management | Deep power-down, auto-precharge, PASR (MR16), ZQ calibration (MR23) |
| Operating Temperature | -40°C to +85°C (industrial grade) |
Pinout & Package
W978H6KBVX1E TR is housed in a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9.0 mm × 12.0 mm × 0.7 mm with 0.5 mm ball pitch, optimized for high-density mobile PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ, VDD2 | Power supply inputs | Separate 1.2V supplies for core logic (VDD), I/O (VDDQ), and internal regulator (VDD2); decoupling required per JEDEC LPDDR2 layout guidelines |
| CK, CK#, DQS, DQS# | Differential clocks/strobes | CK/CK# drives command/address timing; DQS/DQS# source-synchronous strobes for DQ read/write capture at 400MHz |
| DQ[15:0] | Data I/O signals | x16 bidirectional data bus using HSUL_12 driver standard; supports burst lengths 4 and 8 |
| CA[9:0], CS#, CKE, RAS#, CAS#, WE#, DM[1:0] | Command/address/control | 10-bit CA bus with chip select, clock enable, and active-low command signals; DM enables byte masking for partial writes |
| ZQ | Calibration reference | Connects to external 240Ω ±1% precision resistor for on-die output driver impedance tuning (RONPU/RONPD) |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC LPDDR2-S4B Compliance | Fully conforms to JESD209-2 rev. 1.1, enabling interoperability with ARM Cortex-A series application processors |
| Partial Array Self-Refresh (PASR) | Reduces standby current up to 50% by refreshing only active banks via MR16 bank mask configuration |
| ZQ Calibration | Dynamic output impedance adjustment using external 240Ω reference resistor, maintaining signal integrity across voltage/temperature drift |
| Deep Power-Down Mode | Enters ultra-low-current state (<10 µA) with full context retention, enabling rapid wake-up in battery-sensitive devices |
| Temperature Sensor Interface | On-die thermal sensor accessible via MR4 register, supporting dynamic thermal throttling in mobile SoC power management units |
Applications
| Smartphone Application | Tablet System Memory |
|---|---|
Use Scenario: Main system memory in mid-tier Android smartphones with MediaTek or Qualcomm SoCs. IC Role / Device Role / Timing Role: LPDDR2-S4B DRAM providing 256Mb of shared RAM for OS, apps, and GPU frame buffers. Use Value: Enables 800Mbps bandwidth at 1.2V while meeting industrial temperature range (-40°C to +85°C) for reliable operation under thermal stress. | Use Scenario: Primary memory in compact 7–8 inch tablets requiring low-profile BGA packaging. IC Role / Device Role / Timing Role: x16 LPDDR2 interface synchronizing with SoC's 400MHz DDR clock domain using CK/CK# and DQS/DQS#. Use Value: 96-ball VFBGA footprint (9.0 × 12.0 mm) allows dense PCB routing without compromising signal integrity or thermal dissipation. |
| IoT Gateway Buffer | Industrial HMI Display Controller |
Use Scenario: Data buffering in cellular-connected IoT gateways handling concurrent LTE/Wi-Fi traffic. IC Role / Device Role / Timing Role: High-reliability LPDDR2 memory supporting burst reads/writes with tRCD = tRP = 3 cycles for deterministic latency. Use Value: Deep power-down mode reduces idle current to <10 µA, extending battery life during network sleep intervals. | Use Scenario: Frame buffer memory in ruggedized human-machine interface displays deployed in factory environments. IC Role / Device Role / Timing Role: Industrial-grade SDRAM operating continuously at 85°C ambient with PASR-enabled bank-level refresh control. Use Value: On-die temperature sensor (MR4) feeds real-time thermal data to host controller for adaptive refresh rate scaling and thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1DJ-107 WT:A | Same 256Mb x16 LPDDR2, but rated for -25°C to +85°C; tRCD/tRP = 4 cycles at 800Mbps; no PASR support | Lacks partial array self-refresh; higher standby current in always-on edge nodes | Prefer W978H6KBVX1E TR when PASR or extended -40°C operation is required |
| IS42S16160F-6BLI | LPDDR2-compatible but non-JEDEC-compliant; 1.2V supply; tRCD/tRP = 3 cycles; no ZQ calibration or temperature sensor | No on-die impedance tuning or thermal monitoring; requires external calibration circuitry | Prefer W978H6KBVX1E TR for designs needing JEDEC-certified timing, ZQ, and thermal feedback |
Compared with MT42L256M16D1DJ-107 WT:A and IS42S16160F-6BLI, W978H6KBVX1E TR delivers verified PASR, industrial temperature range, and integrated ZQ/thermal sensing-critical for thermally constrained, battery-operated, or long-lifecycle embedded systems.
Availability
W978H6KBVX1E TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet system integration, and industrial HMI display controllers requiring stable component supply and long-term manufacturability.
Supply support for W978H6KBVX1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W978H6KBVX1E TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for low-power, high-density mobile and embedded applications where JEDEC compliance, thermal resilience, and advanced power management are mandatory.
FAQ
What is the package type and ball count for W978H6KBVX1E TR?
W978H6KBVX1E TR uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9.0 mm × 12.0 mm × 0.7 mm with 0.5 mm ball pitch. This package is optimized for high-density mobile PCB layouts and complies with JEDEC MO-271AC standard. The ball assignment includes dedicated VDD/VDDQ/VDD2 power domains, differential CK/CK# and DQS/DQS# pairs, x16 DQ lines, and ZQ calibration terminal.
Does W978H6KBVX1E TR support partial array self-refresh (PASR)?
Yes, W978H6KBVX1E TR supports PASR via Mode Register 16 (MR16), allowing selective refresh of active memory banks only. This feature reduces standby current significantly-up to 50% compared to full-array self-refresh-making it ideal for battery-powered devices requiring extended sleep modes without data loss. Configuration is performed through standard MRW commands.
What is the maximum data rate and clock frequency supported by W978H6KBVX1E TR?
W978H6KBVX1E TR supports a maximum data rate of 800 Mbps per pin, corresponding to a 400 MHz differential clock frequency (tCK = 2.5 ns). It meets all timing requirements for LPDDR2-S4B operation at this speed, including tRCD = tRP = 3 × tCK and tCCD = 2 × tCK, as validated in the official Winbond datasheet revision A01-002.
How does ZQ calibration work on W978H6KBVX1E TR?
ZQ calibration on W978H6KBVX1E TR uses an external 240Ω ±1% precision resistor connected to the ZQ pin to tune internal output driver impedance (RONPU/RONPD). Calibration is triggered via MR23 command and adjusts driver strength dynamically across voltage and temperature variations, ensuring consistent signal integrity and timing margin for DQ/DQS outputs in high-speed LPDDR2 interfaces.
Is W978H6KBVX1E TR compatible with standard LPDDR2 controllers?
Yes, W978H6KBVX1E TR is fully JEDEC JESD209-2 compliant and interoperable with standard LPDDR2 controllers found in ARM-based SoCs such as MediaTek MT67xx, Qualcomm Snapdragon 4xx/6xx, and NXP i.MX6/8 series. It supports all mandatory LPDDR2-S4B commands, timing parameters, and electrical specifications-including HSUL_12 signaling, differential clocking, and burst-length flexibility.
W978H6KBVX1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H6KBVX1E TR FAQ
1.How can I place an order for W978H6KBVX1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H6KBVX1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H6KBVX1E TR reliable?
The price and inventory of W978H6KBVX1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H6KBVX1E TR is usually 5 days.
3.What payment methods are accepted for W978H6KBVX1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H6KBVX1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H6KBVX1E TR?
W978H6KBVX1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H6KBVX1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H6KBVX1E TR?
For technical support, including W978H6KBVX1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H6KBVX1E TR requirements.
6.How does Aetrix verify that W978H6KBVX1E TR is sourced from the original manufacturer or authorized distributors?
All W978H6KBVX1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H6KBVX1E TR meets industry standards.
7.What is the process for return or replacement of W978H6KBVX1E TR?
All W978H6KBVX1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H6KBVX1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H6KBVX1E TR part is unused and in its original packaging.
Return procedure for W978H6KBVX1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H6KBVX1E TR Tags
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M24C02-WMN6TP
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Microchip Technology
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M24C02-FMC6TG
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Microchip Technology
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Microchip Technology
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