Winbond Electronics Corporation W978H6KBVX1I TR

Overview

W978H6KBVX1I TR from Winbond is a 256Mb LPDDR2 SDRAM (x16, 1.2V core/VDDQ) in 96-ball BGA (9 × 13.5 mm, 0.65 mm pitch), supporting 800 Mbps/pin data rates with RL=3/WL=1, tRCD=tRP=3 cycles, and partial array self-refresh for mobile power optimization. It serves as main memory in space-constrained portable SoC platforms.

For engineers reviewing the W978H6KBVX1I TR datasheet, W978H6KBVX1I TR pinout, W978H6KBVX1I TR application, or W978H6KBVX1I TR equivalent, key selection criteria include LPDDR2-800 timing compliance, HSUL_12 I/O interface, ZQ calibration support, and industrial temperature range (-40°C to +85°C) operation.

Technical Context

This LPDDR2 device implements dual-bank architecture with 8K-word x 16-bit organization, supports burst lengths of 4/8/16, and uses differential CK_t/CK_c and DQS_t/DQS_c signaling with HSUL_12 driver output characteristics. Mode registers MR0–MR10 and MR16/MR32/MR40 enable configuration of burst type, temperature compensation, PASR, and DQ calibration patterns.

Power management includes deep power-down (tDPD = 100 ns min), auto-precharge, and controlled self-refresh entry/exit sequences. Initialization requires precise tRST(min) ≥ 200 μs after VDD/VDDQ stabilization, and all timing parameters are defined relative to tCK(avg) with ±0.15 ns jitter tolerance.

Key Specifications

Pinout & Package

Package: 96-ball fine-pitch BGA (9 mm × 13.5 mm, 0.65 mm ball pitch), RoHS-compliant, Pb-free matte Sn finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.

Compared with MT42L256M16RE-107:J and IS42S16160F-6BLI, W978H6KBVX1I TR delivers optimal balance of LPDDR2-800 performance, industrial temperature reliability, and power-aware features (PASR, deep power-down) for mainstream portable and embedded designs - without requiring LPDDR2-1066 timing margins or sacrificing protocol compatibility.

Availability

W978H6KBVX1I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for W978H6KBVX1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM, with global manufacturing and quality certifications.

The W978H6KB series belongs to Winbond's LPDDR2-S4B product line, designed specifically for space- and power-constrained portable electronics requiring JEDEC-compliant low-voltage DDR2 memory with advanced power management.

FAQ

What is the maximum supported data rate for W978H6KBVX1I TR?

The W978H6KBVX1I TR supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a clock period (tCK) of 2.5 ns. This is validated under industrial temperature conditions (-40°C to +85°C) with VDD/VDDQ = 1.2V ± 0.06V and HSUL_12 I/O loading. The device does not support LPDDR2-1066 or higher data rates.

Does W978H6KBVX1I TR support ZQ calibration, and what external component is required?

Yes, W978H6KBVX1I TR supports on-die ZQ calibration for output driver impedance tuning. It requires an external 240Ω ±1% precision resistor (RZQ) connected between the ZQ pin and VSS. Calibration occurs during MRW commands to MR23 and is essential for maintaining signal integrity across voltage and temperature variations.

What is the function of the RESET_n pin on W978H6KBVX1I TR, and what timing is required?

The RESET_n pin on W978H6KBVX1I TR provides asynchronous hardware reset. It must be held low for ≥200 μs after VDD and VDDQ reach regulation, then released to allow internal initialization. Failure to meet this minimum pulse width may result in undefined mode register states or failed power-up sequence in the W978H6KBVX1I TR.

Can W978H6KBVX1I TR operate in deep power-down mode, and what is its typical current draw?

Yes, W978H6KBVX1I TR supports deep power-down mode (entry via EMRS command with MRS bit A11=1). In this state, typical current draw is <10 μA at +25°C, with guaranteed maximum IDD7 ≤ 20 μA over -40°C to +85°C. Exit latency is 100 ns minimum, making it suitable for rapid wake-up in battery-powered devices.

How many banks does W978H6KBVX1I TR have, and how is bank selection performed?

W978H6KBVX1I TR has four internal banks (Bank 0–3), selected using BA0 and BA1 address pins. Bank selection is latched on the rising edge of CK during ACTIVATE, PRECHARGE, or REFRESH commands. Concurrent access to different banks enables interleaved operations and hides row-access latency in the W978H6KBVX1I TR.