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Winbond Electronics Corporation W978H6KBVX2E
- Part No.:
- W978H6KBVX2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H6KBVX2E.pdf
- Description:
- IC DRAM 256MBIT PAR 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,517
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Product details
Overview
W978H6KBVX2E from Winbond is a 256Mb LPDDR2-S4B mobile SDRAM with x16 data bus, 1.2V core/VDDQ supply, and 134-ball VFBGA (6.4mm × 8.0mm × 0.6mm) package. It supports 800Mbps/pin data rate (LPDDR2-800), tRCD/tRP = 3 cycles, and operates across –40°C to +85°C for smartphone application processors and portable multimedia SoCs.
For engineers reviewing the W978H6KBVX2E datasheet, W978H6KBVX2E pinout, W978H6KBVX2E application, or W978H6KBVX2E equivalent, key selection criteria include LPDDR2-800 timing compliance, VFBGA-134 mechanical fit, partial array self-refresh (PASR) support, ZQ calibration capability, and MR10-based DQ calibration sequence.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit I/O architecture, on-die termination (ODT) controlled via mode registers, and HSUL_12 I/O interface compatible with 1.2V logic levels. It uses a 4-bank memory array with programmable burst lengths (BL=4/8), configurable read/write latencies (RL=3/5, WL=1), and bank-specific auto-precharge.
Power management includes deep power-down (DPD), self-refresh (SRE), and power-down (PD) modes with CKE-controlled entry/exit. Calibration features include ZQ reference resistor tracking (MR23/MR24), temperature-sensor-assisted MR4, and MR32/MR40 DQ pattern-based output driver tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B mobile SDRAM, 256Mb density (16M × 16 × 1 bank group × 4 banks) |
| Data Bus Width | x16 interface supporting 800Mbps/pin (LPDDR2-800), compatible with 1.2V HSUL_12 signaling |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, RL = 3/5, WL = 1, tCCD = 2 cycles for seamless bursts |
| Operating Voltage | VDD/VDDQ = 1.2V ±0.06V; VREF = 0.6V ±1% with AC noise limit ≤ ±30mV |
| Temperature Range | Industrial grade: –40°C to +85°C ambient; supports PASR and temperature-compensated refresh |
| Package | 134-ball Very Fine Pitch BGA (VFBGA), 0.4mm pitch, 6.4mm × 8.0mm footprint, 0.6mm height |
| Power Modes | Deep Power-Down (DPD), Self-Refresh (SRE), Power-Down (PD), and active power control via CKE |
Pinout & Package
W978H6KBVX2E uses a 134-ball VFBGA package (6.4mm × 8.0mm × 0.6mm, 0.4mm pitch) with ball grid arranged in 10 rows × 14 columns plus corner exclusions per JEDEC MO-245AB. Pin functions conform to LPDDR2-S4B standard layout for x16 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O supply | 1.2V nominal; separate pins for reduced noise coupling between core logic and I/O drivers |
| VSS | Ground reference | Dedicated ground balls distributed across array to minimize IR drop and improve signal integrity |
| CK_t / CK_c | Differential clock input | HSUL_12-compatible differential pair; defines system timing reference for all command/data operations |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe pair; used for DQ capture alignment in high-speed transfers |
| CA[0:5] | Command/address bus | 6-bit multiplexed command/address bus; latched on rising edge of CK_t for command decoding |
| DQ[0:15] | Data I/O lines | 16-bit bidirectional data bus with programmable ODT; supports BL=4/8 and wrap/non-wrap burst patterns |
| DM[0:1] | Data mask | Two independent write mask signals enabling byte-level masking for x16 interface |
| CKE | Clock enable | Asynchronous active-high input controlling entry/exit from power-down and self-refresh states |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic RONPU/RONPD adjustment using external 240Ω ±1% reference resistor (MR23/MR24 control) |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by masking inactive banks via MR16 bank mask register |
| Temperature Sensor Integration | On-die sensor feeds MR4_Device Temperature register; enables thermal-aware refresh scheduling |
| DQ Calibration Patterns | MR32/MR40 provide dedicated DQ calibration sequences for output driver tuning at system initialization |
| HSUL_12 I/O Standard | Ensures signal integrity at 800Mbps/pin with defined slew rates, VREF tolerance, and differential swing (≥350mV) |
Applications
| Smartphone Application Processor Memory | Portable Media Player DRAM Subsystem |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT series) in sub-6-inch smartphones requiring low standby power and fast wake-up. IC Role / Device Role / Timing Role: LPDDR2-800-compliant x16 SDRAM providing 1.6GB/s bandwidth with tRCD/tRP = 3-cycle latency and deep power-down for battery life extension. Use Value: Enables <10µA self-refresh current at 25°C and <50µA at 85°C via PASR, reducing system idle power by >30% versus full-array refresh. | Use Scenario: Frame buffer and decode buffer in HD video playback devices with HDMI output and multi-format codec support. IC Role / Device Role / Timing Role: High-bandwidth, low-voltage memory interfacing directly to video SoC DDR controller with HSUL_12 I/O compliance and tCCD = 2-cycle seamless burst capability. Use Value: Supports 1080p60 decode with zero-frame-drop buffering using BL=8 reads and auto-precharge, minimizing controller overhead. |
| Tablet GPU-Coupled Memory | IoT Edge Gateway System Memory |
Use Scenario: Shared memory resource for integrated GPU and CPU in 7–10 inch Android tablets running OpenGL ES 3.0 graphics workloads. IC Role / Device Role / Timing Role: Dual-role memory serving both CPU cache-coherent traffic and GPU texture/buffer access with bank-group interleaving and MR10-calibrated DQ timing. Use Value: Delivers consistent 1.2GB/s effective bandwidth under mixed read/write loads via tRRD = 2-cycle bank-group switching and RL=3/5 programmability. | Use Scenario: Primary working memory in fanless industrial IoT gateways with cellular/Wi-Fi connectivity and real-time Linux OS. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM operating continuously at –40°C to +85°C with MR4 temperature reporting and extended refresh intervals. Use Value: Ensures reliable operation over full temperature range with <±1% VREF drift and calibrated ODT for stable signal integrity on long PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16xx-107 | Same 256Mb x16 LPDDR2-1066 density but rated for LPDDR2-1066 (1066Mbps/pin); requires tighter tRCD/tRP = 2 cycles | Higher bandwidth target (2.1GB/s) but increased power and timing margin sensitivity | Select when system clock tree supports 533MHz CK frequency and board layout accommodates stricter setup/hold timing |
| K4P2G324EC-ACF6 | 2Gb (x32) LPDDR2-800 device in 168-ball WFBGA; double density, wider bus, larger footprint | Targets higher-performance tablets with dual-channel controllers; not pin-compatible with W978H6KBVX2E's 134-ball VFBGA | Choose only if redesigning PCB for 168-ball layout and requiring ≥2GB capacity with x32 interface |
Compared with MT42L256M16xx-107 and K4P2G324EC-ACF6, W978H6KBVX2E offers optimal balance of LPDDR2-800 performance, industrial temperature support, and compact 134-ball VFBGA footprint-making it ideal for space-constrained smartphone and portable media designs where timing margin and thermal stability are prioritized over peak bandwidth.
Availability
W978H6KBVX2E is available at Aetrix Electronics and suitable for smartphone application processors, portable media players, tablet GPU subsystems, and IoT edge gateways requiring stable component supply with guaranteed industrial temperature grade and LPDDR2-800 timing compliance.
Supply support for W978H6KBVX2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
The W978H6KB series belongs to Winbond's LPDDR2-S4B product line, designed specifically for low-power, high-density mobile applications requiring JEDEC-compliant LPDDR2-800 operation with advanced power management and calibration features.
FAQ
What is the exact package type and dimensions of W978H6KBVX2E?
W978H6KBVX2E uses a 134-ball Very Fine Pitch BGA (VFBGA) package per JEDEC MO-245AB, measuring 6.4mm × 8.0mm with 0.4mm ball pitch and 0.6mm maximum height. This matches the "VX" suffix in the part number and is distinct from the 168-ball WFBGA option used in other variants of the W978H6KB family.
Does W978H6KBVX2E support ZQ calibration, and how is it implemented?
Yes, W978H6KBVX2E supports ZQ calibration using an external 240Ω ±1% reference resistor. Calibration is initiated via MRW to MR23/MR24, adjusting RONPU and RONPD driver impedances dynamically. The device supports short, long, and reset ZQ calibration sequences per JEDEC JESD209-2A section 7.4.23.
What LPDDR2 speed grade does W978H6KBVX2E comply with, and what are its key timing parameters?
W978H6KBVX2E complies with LPDDR2-800 (800Mbps/pin), supporting tRCD = tRP = 3 clock cycles, tRRD = 2 cycles, and tCCD = 2 cycles for seamless burst transitions. It operates at 400MHz CK frequency with RL=3/5 and WL=1, meeting JEDEC JESD209-2A timing requirements for industrial temperature range.
How does W978H6KBVX2E handle temperature variation during operation?
W978H6KBVX2E integrates an on-die temperature sensor reported in MR4_Device Temperature (MA[7:0] = 04H). This enables system firmware to adjust refresh intervals and optimize PASR bank masking based on real-time die temperature, ensuring reliability across –40°C to +85°C without external sensors.
Is W978H6KBVX2E pin-compatible with other variants in the W978H6KB family?
No-W978H6KBVX2E uses the 134-ball VFBGA package, while other variants like W978H6KBWX2E use 168-ball WFBGA. Pinouts differ significantly between these packages; no mechanical or electrical pin compatibility exists. Board design must match the exact package variant specified in the part number suffix.
W978H6KBVX2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H6KBVX2E FAQ
1.How can I place an order for W978H6KBVX2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H6KBVX2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H6KBVX2E reliable?
The price and inventory of W978H6KBVX2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H6KBVX2E is usually 5 days.
3.What payment methods are accepted for W978H6KBVX2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W978H6KBVX2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W978H6KBVX2E?
W978H6KBVX2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H6KBVX2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H6KBVX2E?
For technical support, including W978H6KBVX2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H6KBVX2E requirements.
6.How does Aetrix verify that W978H6KBVX2E is sourced from the original manufacturer or authorized distributors?
All W978H6KBVX2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H6KBVX2E meets industry standards.
7.What is the process for return or replacement of W978H6KBVX2E?
All W978H6KBVX2E units undergo pre-shipment inspection (PSI). If there is an issue with W978H6KBVX2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H6KBVX2E part is unused and in its original packaging.
Return procedure for W978H6KBVX2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H6KBVX2E Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24C04C-SSHM-T
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Microchip Technology
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