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Winbond Electronics Corporation W978H6KBVX2E TR
- Part No.:
- W978H6KBVX2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H6KBVX2E TR.pdf
- Description:
- IC DRAM 256MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,856
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Product details
Overview
W978H6KBVX2E TR from Winbond is a 256Mb LPDDR2-S4B SDRAM in 136-ball BGA (10mm × 12mm, 0.65mm pitch), supporting 800Mbps/pin data rates with 1.2V core/VDDQ and 1.8V VDD2 supply. It implements dual-channel x16 organization, supports partial array self-refresh (PASR), ZQ calibration, and temperature-sensing mode register access for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W978H6KBVX2E TR datasheet, W978H6KBVX2E TR pinout, W978H6KBVX2E TR application, or W978H6KBVX2E TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), HSUL_12 I/O interface, burst length flexibility (BL = 4/8), and bank masking capability via MR16 for dynamic power optimization.
Technical Context
This LPDDR2 device uses a synchronous double-data-rate architecture with differential CK/CK# and DQS/DQS# strobes, supporting command-based refresh, auto-precharge, and seamless burst transitions. Its internal 8-bank memory array enables concurrent activation across banks, while PASR (MR16) allows selective bank retention during self-refresh to reduce IDD6 current.
It implements HSUL_12 (High-Speed Ultra-Low Voltage) signaling for DQ/DM/DQS pins with calibrated output impedance (RONPU/RONPD via ZQ), and supports mode register read/write (MRR/MRW) for runtime configuration of timing parameters, temperature reporting (MR4), and DQ calibration patterns (MR32/MR40).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 256Mb density (16M × 16 × 1 bank group × 2) |
| Data Rate | 800 Mbps/pin (LPDDR2-800, tCK = 2.5ns min) |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V - dual-rail operation required |
| Timing Parameters | tRCD = tRP = 3 × tCK; tRRD = 2 × tCK; RL = 3, WL = 1 - defines minimum latency for read/write commands |
| I/O Interface | HSUL_12 standard - enables low-voltage, high-speed signaling with ZQ-calibrated drive strength |
| Operating Temp | -40°C to +85°C - qualified for industrial-grade mobile and embedded applications |
| Refresh Mode | All-bank refresh & partial array self-refresh (PASR) - reduces standby current by masking inactive banks |
Pinout & Package
Package: 136-ball FBGA (10mm × 12mm, 0.65mm ball pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O power supply | Separate 1.2V rails for logic core and DQ interface; decoupling critical for signal integrity |
| VDD2 | Analog reference supply | 1.8V rail powers internal voltage references and temperature sensor circuitry |
| CK, CK# | Differential clock input | Edge-triggered system clock; defines all timing windows (tCK = 2.5ns min at 800Mbps) |
| DQS, DQS# | Differential strobe | Source-synchronous read/write strobe aligned to DQ edges; supports tDQSCKmin/tDQSCKmax tracking |
| CA[0:7] | Command/address bus | Multiplexed 8-bit bus carrying row/column/bank address and command encoding (ACT, READ, WRITE, etc.) |
| DQ[0:15] | Data I/O | x16 bidirectional data bus using HSUL_12 drivers with programmable RON via ZQ calibration |
| DM[0:1] | Data mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; enables partial writes without read-modify-write |
| CKE | Clock enable | Asynchronous active-high control for power-down entry/exit and clock gating |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16-controlled bank masking reduces IDD6 current by up to 40% vs full-array self-refresh |
| ZQ Calibration | On-die impedance tuning of DQ/DM drivers (RONPU/RONPD) using external 240Ω ±1% resistor |
| Temperature Sensor Access | MR4 readout provides on-die junction temperature for thermal-aware memory controller scheduling |
| Seamless Burst Transitions | tCCD = 2 × tCK enables back-to-back read/write bursts without intervening precharge |
| LPDDR2-800 Timing Compliance | Fully meets JEDEC JESD209-2A spec for 800Mbps operation including tDQSCKDL/DM/DS timing windows |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary DRAM for application processors in mid-tier Android smartphones requiring low-power, high-bandwidth memory. IC Role / Device Role / Timing Role: LPDDR2 SDRAM serving as main system memory with 800Mbps/pin bandwidth and PASR-enabled dynamic power scaling. Use Value: Enables 256Mb capacity at 1.2V VDDQ, reducing active and self-refresh current versus LPDDR1 while maintaining pin compatibility with legacy LPDDR2 controllers. | Use Scenario: On-board memory for ARM-based tablet SoCs where thermal envelope and battery life constrain memory subsystem power. IC Role / Device Role / Timing Role: Dual-channel x16 LPDDR2 interface providing 1.6GB/s peak bandwidth with HSUL_12 signaling and ZQ-calibrated drive strength. Use Value: Supports burst lengths of 4 and 8 with seamless transitions (tCCD = 2), minimizing controller overhead and improving effective throughput in graphics-intensive UI rendering. |
| Automotive Infotainment System RAM | Industrial HMI Controller Memory |
Use Scenario: Memory for automotive-grade infotainment head units operating across -40°C to +85°C ambient range. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR2 SDRAM with validated timing margins for automotive power cycling and EMI environments. Use Value: Qualified to AEC-Q100 Grade 3; MR4 temperature reporting enables adaptive refresh rate adjustment to maintain data retention under thermal stress. | Use Scenario: Main memory for ruggedized human-machine interface controllers in factory automation panels. IC Role / Device Role / Timing Role: Low-power SDRAM supporting deep power-down (DPD) and controlled power-off sequences per JEDEC requirements. Use Value: DPD mode achieves <10µA standby current; uncontrolled power-off sequence handling ensures data integrity during unexpected brownouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-107 WT:D | Same 256Mb x16 LPDDR2-1066, but rated for -25°C to +85°C; no MR4 temperature sensor register | Higher speed grade (1066Mbps) with tighter tRCD/tRP = 2, but lacks on-die temperature reporting | Select when higher bandwidth is prioritized over thermal monitoring capability |
| IS42S32800J-6BLI | SDRAM (not LPDDR2); 256Mb x32, 3.3V, asynchronous interface; no ZQ, PASR, or HSUL_12 | Legacy parallel SDRAM interface - requires different controller logic, PCB layout, and power scheme | Select only for cost-sensitive, non-mobile designs where LPDDR2 features are unnecessary |
Compared with MT42L256M16RE-107 WT:D and IS42S32800J-6BLI, W978H6KBVX2E TR uniquely combines LPDDR2-800 timing compliance, integrated temperature sensing (MR4), and PASR support in a single industrial-temperature 136-ball package - enabling power-aware memory management not available in either alternative.
Availability
W978H6KBVX2E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment system RAM requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W978H6KBVX2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and LPDDR mobile memory for consumer, industrial, and automotive markets.
The W978H6KB series belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile platforms requiring JEDEC-compliant low-voltage DRAM with advanced power management features like PASR and ZQ calibration.
FAQ
What is the maximum data rate supported by W978H6KBVX2E TR?
W978H6KBVX2E TR supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a minimum clock period (tCK) of 2.5 ns. This is confirmed in the datasheet's AC timing tables (Section 7.4.3.3–7.4.3.4) and electrical specifications (Section 8.2.4.3.1), with RL = 3 and WL = 1 timing requirements fully met at this rate.
Does W978H6KBVX2E TR support partial array self-refresh (PASR)?
Yes, W978H6KBVX2E TR supports PASR via Mode Register 16 (MR16), allowing selective bank masking during self-refresh to reduce IDD6 current. The feature is documented in Section 7.4.18 and Table 7.3.13 of the datasheet, with bank mask configuration enabled through MA[7:0] = 10H writes.
What supply voltages does W978H6KBVX2E TR require?
W978H6KBVX2E TR requires three independent supplies: VDD/VDDQ = 1.2V ±0.06V for core and I/O logic, and VDD2 = 1.8V ±0.1V for analog reference circuits and temperature sensor operation. These values are specified in Section 8.2.1.1 and must be maintained simultaneously during all operational modes.
Is ZQ calibration supported on W978H6KBVX2E TR?
Yes, W978H6KBVX2E TR implements ZQ calibration for output driver impedance tuning (RONPU/RONPD) using an external 240Ω ±1% resistor. Calibration commands (ZQINIT, ZQSHORT, ZQLONG) and timing examples are detailed in Section 7.4.23, with RZQ I-V curve characterization in Section 8.2.6.6.
What is the package type and ball count of W978H6KBVX2E TR?
W978H6KBVX2E TR uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10mm × 12mm with 0.65mm ball pitch. Ball assignment and configuration are defined in Sections 4 and 5 of the datasheet, confirming compatibility with standard LPDDR2 layout guidelines.
W978H6KBVX2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H6KBVX2E TR FAQ
1.How can I place an order for W978H6KBVX2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H6KBVX2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H6KBVX2E TR reliable?
The price and inventory of W978H6KBVX2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H6KBVX2E TR is usually 5 days.
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4.How is shipping managed for W978H6KBVX2E TR?
W978H6KBVX2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W978H6KBVX2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H6KBVX2E TR?
For technical support, including W978H6KBVX2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H6KBVX2E TR requirements.
6.How does Aetrix verify that W978H6KBVX2E TR is sourced from the original manufacturer or authorized distributors?
All W978H6KBVX2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H6KBVX2E TR meets industry standards.
7.What is the process for return or replacement of W978H6KBVX2E TR?
All W978H6KBVX2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W978H6KBVX2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H6KBVX2E TR part is unused and in its original packaging.
Return procedure for W978H6KBVX2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H6KBVX2E TR Tags
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M24C02-WMN6TP
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