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Winbond Electronics Corporation W978H6KBVX2I
- Part No.:
- W978H6KBVX2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W978H6KBVX2I.pdf
- Description:
- IC DRAM 256MBIT PAR 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,961
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Product details
Overview
W978H6KBVX2I from Winbond is a 256Mb LPDDR2 SDRAM organized as 16M x 16, operating at 1.2V core/interface supply with 800 Mbps data rate (LPDDR2-800), supporting burst lengths of 4/8 and on-die termination calibration via ZQ. It serves as main memory in mobile application processors and low-power embedded SoCs.
For engineers reviewing the W978H6KBVX2I datasheet, W978H6KBVX2I pinout, W978H6KBVX2I application, or W978H6KBVX2I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), 134-ball VFBGA package compatibility, partial array self-refresh (PASR) support for dynamic power management, and MR10-based DQ calibration capability.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit I/O, differential CK/CK# and DQS/DQS# signaling, and HSUL_12 driver output logic. It supports all mandatory LPDDR2 commands including Activate, Read/Write with auto-precharge, Refresh, Self-Refresh, Deep Power-Down, and Mode Register Write/Read.
Internal architecture includes eight banks, programmable burst length (BL=4/8), configurable read/write latency (RL=3/5, WL=1), and temperature-sensing circuitry tied to MR4. Calibration registers MR10, MR32, and MR40 enable per-DQ timing adjustment using external 240Ω ±1% ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM – Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-2A. |
| Capacity & Organization | 256Mb / 16M × 16 – Supports 16-bit wide data bus; no x32 variant in this part number. |
| Data Rate | 800 Mbps (LPDDR2-800) – Requires tCK = 2.5 ns clock period; RL=3, WL=1 default timing. |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V – Single supply for core and I/O; VREF = 0.6V ±1% required for CA/DQ inputs. |
| Operating Temp | -40°C to +85°C (Industrial grade) – Validated IDD specs and timing margins across full range. |
| Package | 134-ball VFBGA (6.4mm × 8.0mm × 0.55mm) – 0.4mm ball pitch; RoHS-compliant, lead-free finish. |
| Power Modes | Self-Refresh, Deep Power-Down, Power-Down – Enables sub-100µA retention current (IDD6) at 85°C. |
Pinout & Package
W978H6KBVX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.4 mm ball pitch, measuring 6.4 mm × 8.0 mm × 0.55 mm. Pin assignments follow JEDEC-standard LPDDR2 ballout for 16-bit interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Primary system clock pair; defines all timing windows; requires AC-coupled 100Ω differential termination. |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe; tracks DQ timing; used for write leveling and read capture. |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus; HSUL_12 compatible; supports on-die ODT via MR1/MR2. |
| CA[6:0] | Command Address Bus | 7-bit multiplexed command/address bus (no A16/A17); latched on CK rising edge. |
| CS_n | Chip Select | Active-low chip select; enables command decoding only when asserted with valid CA. |
| CKE | Clock Enable | Controls entry/exit from Power-Down and Self-Refresh; must be high during normal operation. |
| ZQ | Calibration Reference | Connects to external 240Ω ±1% resistor to ground; enables RONPU/RONPD trimming via MR10. |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable via MR1/MR2; supports dynamic ODT control per bank to reduce signal reflections on shared DQ bus. |
| Partial Array Self-Refresh (PASR) | Configurable via MR16; allows selective refresh of active banks only, cutting IDD6 current by up to 50% vs full-array refresh. |
| ZQ Calibration | Supports long/short calibration cycles (MR23); compensates for voltage/temperature drift in output drivers for stable DQ timing. |
| Temperature Sensor | Integrated sensor mapped to MR4; provides real-time die temperature for thermal-aware refresh rate adjustment. |
| Burst Interrupt Capability | Enables seamless switching between read/write bursts without precharge penalty (tCCD = 2 cycles), improving memory bandwidth utilization. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM Cortex-A series application processors running Android OS with multi-tasking UI and GPU-accelerated graphics. IC Role / Device Role / Timing Role: LPDDR2-800-compliant main memory providing 1.6 GB/s peak bandwidth to processor AXI bus via 16-bit interface. Use Value: PASR and Deep Power-Down modes reduce system standby current below 50 µA while preserving data integrity across sleep states. | Use Scenario: System-level memory for quad-core tablet SoCs handling HD video decode, web browsing, and background sync services. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 buffer interfacing directly to SoC memory controller with RL=3/WL=1 timing. Use Value: ZQ calibration ensures signal integrity over 0.4 mm pitch VFBGA interconnects and mitigates board-level impedance variation. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Real-time memory subsystem for QNX- or Linux-based automotive head units supporting navigation, voice recognition, and rear-seat entertainment. IC Role / Device Role / Timing Role: Industrial-grade (-40°C to +85°C) LPDDR2 memory synchronized to SoC clock domain with robust CKE-controlled power sequencing. Use Value: Temperature sensor feedback to MR4 enables adaptive refresh scheduling under varying cabin thermal conditions. | Use Scenario: Embedded controller in factory-floor HMIs requiring deterministic response time and long-term reliability in uncooled enclosures. IC Role / Device Role / Timing Role: Non-volatile boot memory companion; retains configuration state during brown-out events via Self-Refresh mode. Use Value: Verified tRCD = 3 / tRP = 3 timing compliance ensures predictable latency for real-time PLC communication stacks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16XX-107 | 128M × 16, LPDDR2-1066 (1.06 Gbps); 168-ball WFBGA; higher speed grade but larger footprint. | Requires PCB redesign for 168-ball layout; supports higher bandwidth but consumes more power in active mode. | Select when >1.6 GB/s sustained bandwidth is required and thermal budget allows higher IDD0. |
| EM68B16CWQG-107 | 256Mb x16 LPDDR2-1066; 134-ball VFBGA same size; different MR register map and ZQ implementation. | Not drop-in: MR10 calibration sequence differs; requires firmware update for initialization flow. | Choose only if existing design already uses Elpida's initialization stack and layout matches 134-ball padout. |
Compared with MT42L128M16XX-107 and EM68B16CWQG-107, W978H6KBVX2I offers optimal balance of industrial temperature support, 134-ball VFBGA compactness, and verified LPDDR2-800 timing compliance-making it preferred for cost-sensitive, space-constrained mobile and embedded designs where 800 Mbps meets performance targets.
Availability
W978H6KBVX2I is available at Aetrix Electronics and suitable for smartphone application processors, automotive infotainment systems, and industrial HMI controllers requiring stable component supply and long-lifecycle support.
Supply support for W978H6KBVX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs.
W978H6KBVX2I belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for battery-powered portable devices and industrial systems demanding low-voltage operation, extended temperature range, and JEDEC-compliant power management features.
FAQ
What is the maximum supported data rate for W978H6KBVX2I?
W978H6KBVX2I supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a 400 MHz clock frequency (tCK = 2.5 ns). This is confirmed in the datasheet's AC timing tables and electrical characteristics section under "LPDDR2-800/1066 Input Signal" specifications. The device does not support LPDDR2-1066 mode.
Does W978H6KBVX2I support Deep Power-Down mode?
Yes, W978H6KBVX2I fully supports Deep Power-Down (DPD) mode per JEDEC JESD209-2A. Entry requires specific command sequences with CKE low and CS_n high; exit requires tDPDX ≥ 100 ns before first valid command. DPD reduces current to <10 µA at 25°C, enabling ultra-low-power system suspend states.
What package type is used for W978H6KBVX2I?
W978H6KBVX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.4 mm ball pitch, dimensions 6.4 mm × 8.0 mm × 0.55 mm, and lead-free RoHS-compliant finish. This matches the "134 Ball VFBGA" configuration specified in Section 4.1 of the official datasheet.
How is on-die termination (ODT) configured on W978H6KBVX2I?
ODT is configured through Mode Register MR1 (MA[7:0] = 01H) and MR2 (MA[7:0] = 02H), which define termination resistance values (Rtt_Nom, Rtt_WR) and enable/disable control per bank. Supported values include 120Ω, 60Ω, and off-state; settings persist until rewritten and affect DQ/DQS signal integrity during reads/writes.
Is ZQ calibration required for W978H6KBVX2I operation?
Yes, ZQ calibration is mandatory for production use of W978H6KBVX2I. The device requires connection of an external 240Ω ±1% resistor to the ZQ pin and executes calibration via MR23 commands to trim output driver impedance (RONPU/RONPD). Without calibration, DQ timing margin degrades significantly across voltage/temperature variations.
W978H6KBVX2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W978H6KBVX2I FAQ
1.How can I place an order for W978H6KBVX2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W978H6KBVX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W978H6KBVX2I reliable?
The price and inventory of W978H6KBVX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W978H6KBVX2I is usually 5 days.
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Once your W978H6KBVX2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W978H6KBVX2I?
For technical support, including W978H6KBVX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W978H6KBVX2I requirements.
6.How does Aetrix verify that W978H6KBVX2I is sourced from the original manufacturer or authorized distributors?
All W978H6KBVX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W978H6KBVX2I meets industry standards.
7.What is the process for return or replacement of W978H6KBVX2I?
All W978H6KBVX2I units undergo pre-shipment inspection (PSI). If there is an issue with W978H6KBVX2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W978H6KBVX2I part is unused and in its original packaging.
Return procedure for W978H6KBVX2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W978H6KBVX2I Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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