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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W979H2KBQX2I

Name: W979H2KBQX2I
Brand: Winbond Electronics Corporation
SKU: W979H2KBQX2I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W979H2KBQX2I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 168-WFBGA

Datasheet:: W979H2KBQX2I.pdf

Description:: IC DRAM 512MBIT 168

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Product details

Overview

W979H2KBQX2I from Winbond is a 512Mb LPDDR2-S4B mobile SDRAM with x16 data bus, 1.2V core/VDDQ supply, and 134-ball VFBGA (8mm × 10.5mm × 0.6mm) package. It supports 800Mbps/pin (LPDDR2-800) data rates, operates across –40°C to +85°C, and integrates on-die termination, ZQ calibration, and partial array self-refresh for low-power mobile applications including smartphone application processors and tablet SoCs.

For engineers reviewing the W979H2KBQX2I datasheet, W979H2KBQX2I pinout, W979H2KBQX2I application, or W979H2KBQX2I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), MR10-based DQ calibration support, 134-ball VFBGA mechanical compatibility, and industrial temperature grade operation without derating.

Technical Context

This device implements the JEDEC LPDDR2 S4B standard with dual-channel 16-bit I/O architecture, supporting burst lengths of 4 and 8, read latencies of 3 and 5, and write latencies of 1. It uses HSUL_12 I/O signaling with differential CK/DQS and single-ended CA/CS_n inputs, requiring external 240Ω ±1% ZQ reference resistor.

Power management includes deep power-down (IDD6), partial array self-refresh (PASR) via MR16 bank masking, and temperature-sensing mode register (MR4) for thermal-aware refresh control. Initialization requires strict tRST minimum of 200ns after VDD/VDDQ stabilization and CKE high before first command.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	LPDDR2-S4B mobile SDRAM, compliant with JESD209-2A specification
Capacity & Organization	512Mb (32M × 16), x16 data bus, 4 banks
Data Rate	800Mbps/pin (LPDDR2-800), tCK = 2.5ns min
Supply Voltages	VDD = VDDQ = 1.2V ±0.06V; VREF = 0.6V ±1%, internally generated
Operating Temperature	–40°C to +85°C (industrial grade), fully characterized at 85°C
Package	134-ball VFBGA, 0.5mm pitch, 8.0mm × 10.5mm × 0.6mm body, Pb-free
Key Timing	tRCD = tRP = 3 × tCK, tRRD = 2 × tCK, tCCD = 2 × tCK for seamless bursts

Pinout & Package

W979H2KBQX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8.0mm × 10.5mm footprint, and 0.6mm maximum height. Pin assignment follows JEDEC-standard LPDDR2 S4B ballout for x16 configuration.

Pin/Terminal	Circuit Role	Design Meaning
DQ0–DQ15	Data I/O (bidirectional)	x16 data bus using HSUL_12 drivers; each pair shares DQS_t/DQS_c strobe
DQS0_t / DQS0_c	Differential data strobe	Source-synchronous capture for DQ0–DQ7; 0.35Vpp differential swing required
DQS1_t / DQS1_c	Differential data strobe	Source-synchronous capture for DQ8–DQ15; matched routing critical to DQ0–7 group
CK_t / CK_c	Differential clock input	System timing reference; 0.35Vpp min swing, 50% duty cycle tolerance ±5%
CA0–CA10	Command/address bus	Single-ended inputs for row/column/bank address and command encoding; sampled on CK rising edge
CS_n	Chip select	Active-low enable for command decoding; must be stable ≥1 cycle before command
CKE	Clock enable	Controls entry/exit from power-down and self-refresh; synchronous to CK
ZQ	ZQ calibration reference	Connects to external 240Ω ±1% resistor to ground for RONPU/RONPD trimming

Key Features

Feature	Design Value
On-die termination (ODT)	Programmable ODT values via MR5/MR6; eliminates external termination resistors on DQ/DQS lines
ZQ calibration	Supports long/short ZQ calibration (MR23); compensates for process/voltage/temperature drift in output driver impedance
Partial array self-refresh (PASR)	MR16 enables bank-level masking to reduce self-refresh current by up to 50% when only subset of banks active
Temperature sensor	Integrated sensor feeds MR4; enables dynamic refresh rate adjustment based on die temperature
Deep power-down mode	IDD6 ≤ 10µA typical at 85°C; retains no data but allows fastest wake-up among low-power states

Applications

Smartphone Application Processor Memory	Tablet SoC Main Memory
Use Scenario: Primary memory interface for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT series) in sub-6-inch smartphones. IC Role / Device Role / Timing Role: LPDDR2-800-compliant x16 SDRAM providing 1.28GB/s bandwidth to CPU/GPU subsystems with PASR-enabled background task retention. Use Value: Enables 1.2V operation and deep power-down during display-off states, reducing system standby current by >40% versus LPDDR1.	Use Scenario: Main memory for mid-range Android tablets with quad-core Cortex-A53 SoCs and 1080p displays. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 interface delivering sustained 1.0GB/s throughput under video decode workloads with MR10-calibrated DQ timing margins. Use Value: ZQ calibration maintains signal integrity across 0–85°C ambient range, eliminating board-level re-tuning during thermal cycling validation.
Automotive Infotainment Head Unit	Industrial HMI Controller
Use Scenario: Memory subsystem for QNX- or Android Automotive–based head units requiring AEC-Q200 alignment and extended temperature operation. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM supporting –40°C to +85°C operation with MR4 temperature reporting for adaptive refresh scheduling. Use Value: PASR and temperature-aware refresh reduce DRAM controller firmware complexity while meeting ASIL-B functional safety constraints for non-critical memory paths.	Use Scenario: Embedded controller in factory-floor HMIs with fanless enclosures and unregulated 12V DC input supplies. IC Role / Device Role / Timing Role: Low-voltage 1.2V SDRAM interfacing to RISC-V or ARM Cortex-M7 microcontrollers via dedicated LPDDR2 PHY blocks. Use Value: On-die termination and HSUL_12 signaling eliminate need for external termination networks, reducing BOM count and PCB layer count in space-constrained designs.

Smartphone Application Processor Memory

Tablet SoC Main Memory

Use Scenario: Primary memory interface for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT series) in sub-6-inch smartphones.

IC Role / Device Role / Timing Role: LPDDR2-800-compliant x16 SDRAM providing 1.28GB/s bandwidth to CPU/GPU subsystems with PASR-enabled background task retention.

Use Value: Enables 1.2V operation and deep power-down during display-off states, reducing system standby current by >40% versus LPDDR1.

Use Scenario: Main memory for mid-range Android tablets with quad-core Cortex-A53 SoCs and 1080p displays.

IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 interface delivering sustained 1.0GB/s throughput under video decode workloads with MR10-calibrated DQ timing margins.

Use Value: ZQ calibration maintains signal integrity across 0–85°C ambient range, eliminating board-level re-tuning during thermal cycling validation.

Automotive Infotainment Head Unit

Industrial HMI Controller

Use Scenario: Memory subsystem for QNX- or Android Automotive–based head units requiring AEC-Q200 alignment and extended temperature operation.

IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM supporting –40°C to +85°C operation with MR4 temperature reporting for adaptive refresh scheduling.

Use Value: PASR and temperature-aware refresh reduce DRAM controller firmware complexity while meeting ASIL-B functional safety constraints for non-critical memory paths.

Use Scenario: Embedded controller in factory-floor HMIs with fanless enclosures and unregulated 12V DC input supplies.

IC Role / Device Role / Timing Role: Low-voltage 1.2V SDRAM interfacing to RISC-V or ARM Cortex-M7 microcontrollers via dedicated LPDDR2 PHY blocks.

Use Value: On-die termination and HSUL_12 signaling eliminate need for external termination networks, reducing BOM count and PCB layer count in space-constrained designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L128M16D1KJ-107 IT	1Gb density (x16), LPDDR2-1066 speed grade, 168-ball WFBGA package	Higher bandwidth requirement; requires PCB redesign for 168-ball footprint and tighter tDQSCK tolerances	Select when system needs >1.7GB/s bandwidth and can accommodate larger package and higher IDD
IS42S16160F-6BLI	SDR SDRAM (not LPDDR2), 256Mb x16, 54-pin TSOP-II, 3.3V operation	Legacy interface; lacks LPDDR2 power features (deep power-down, PASR, ZQ), incompatible command set and timing	Only for cost-sensitive, non-mobile designs where ultra-low power is not required and interface migration is impractical

Compared with MT42L128M16D1KJ-107 IT and IS42S16160F-6BLI, W979H2KBQX2I delivers optimal balance of industrial temperature support, LPDDR2-800 performance, and power efficiency in 134-ball VFBGA - making it suitable for space-constrained, thermally demanding embedded systems without over-specifying bandwidth or voltage.

Availability

W979H2KBQX2I is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, automotive infotainment head units, and industrial HMI controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W979H2KBQX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM products for consumer, industrial, and automotive markets.

W979H2KBQX2I belongs to Winbond's LPDDR2-S4B product line, designed specifically for low-power, high-bandwidth memory interfaces in battery-operated portable devices and thermally constrained embedded systems.

FAQ

What is the operating temperature range specified for W979H2KBQX2I?

W979H2KBQX2I is rated for industrial temperature operation from –40°C to +85°C. All AC and DC parameters-including tRCD, tRP, IDD currents, and ZQ calibration accuracy-are fully characterized across this range per the official datasheet revision A01-003. No derating is required at the extremes, and MR4 reports real-time die temperature for thermal-aware system management.

Does W979H2KBQX2I support deep power-down mode, and what is its typical current draw?

Yes, W979H2KBQX2I supports deep power-down mode (IDD6). Its typical current draw is ≤10µA at +85°C, as specified in Section 8.3.2.2 of the datasheet. This mode disables all internal clocks and refresh, retaining no data but enabling the fastest wake-up latency among low-power states-critical for rapid UI resume in handheld devices.

What external component is required for ZQ calibration on W979H2KBQX2I?

W979H2KBQX2I requires an external 240Ω ±1% precision resistor connected between the ZQ pin and VSS (ground), as defined in Section 7.4.23.5 and Table 8.2.6.6. This resistor serves as the reference for on-die RONPU/RONPD calibration, ensuring consistent output driver impedance across voltage and temperature variations.

How many banks does W979H2KBQX2I have, and how is bank addressing implemented?

W979H2KBQX2I has 4 internal banks. Bank addressing is performed using CA2 and CA3 signals per JEDEC LPDDR2 S4B standard, as shown in Section 5.2 Addressing Table. These bits are sampled with every Activate, Precharge, and Read/Write command to select the target bank, enabling concurrent operations across banks for improved throughput.

Is W979H2KBQX2I pin-compatible with other Winbond LPDDR2 parts like W979H6KB?

No, W979H2KBQX2I is not pin-compatible with W979H6KB. While both belong to the same family and share LPDDR2-S4B functionality, W979H2KBQX2I uses a 134-ball VFBGA package, whereas W979H6KB uses a 168-ball WFBGA package (Section 4.1 vs. 4.2). Their ballouts differ in count, pitch, and signal mapping-requiring separate PCB layouts and footprint validation.

W979H2KBQX2I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 168-WFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2

Memory Size:: 512Mbit

Memory Organization:: 16M x 32

Memory Interface:: -

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: -

Voltage - Supply:: 1.14V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 168-WFBGA (12x12)

W979H2KBQX2I FAQ

1.How can I place an order for W979H2KBQX2I through Aetrix?

Please submit a Request for Quotation (RFQ) for W979H2KBQX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W979H2KBQX2I reliable?

The price and inventory of W979H2KBQX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBQX2I is usually 5 days.

3.What payment methods are accepted for W979H2KBQX2I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBQX2I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W979H2KBQX2I?

W979H2KBQX2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W979H2KBQX2I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W979H2KBQX2I?

For technical support, including W979H2KBQX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBQX2I requirements.

6.How does Aetrix verify that W979H2KBQX2I is sourced from the original manufacturer or authorized distributors?

All W979H2KBQX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBQX2I meets industry standards.

7.What is the process for return or replacement of W979H2KBQX2I?

All W979H2KBQX2I units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBQX2I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W979H2KBQX2I part is unused and in its original packaging.

Return procedure for W979H2KBQX2I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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