Winbond Electronics Corporation W979H2KBVX1E

Overview

W979H2KBVX1E from Winbond Electronics is a 2Gb (256M x 8) LPDDR2 SDRAM in 134-ball FBGA package, operating at 1066 Mbps data rate with 1.2V core/VDDQ supply and -25°C to +85°C industrial temperature range. It supports burst lengths of 4/8, on-die termination, ZQ calibration, and partial array self-refresh for mobile and embedded applications requiring low-power memory.

For engineers reviewing the W979H2KBVX1E datasheet, W979H2KBVX1E pinout, W979H2KBVX1E application, or W979H2KBVX1E equivalent, key selection criteria include LPDDR2-1066 timing compliance, 134-ball VFBGA-134 (8mm × 12mm × 1.0mm), tRCD/tRP = 3 cycles, tCCD = 2 cycles, and MR10-based DQ calibration support.

Technical Context

This device implements JEDEC-standard LPDDR2 architecture with dual-channel 16-bit I/O (x8 configuration), differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), and HSUL_12 I/O interface. It uses mode registers MR0–MR63 for configuration including burst type, read/write latency (RL=3/WL=1), PASR bank masking, and temperature-sensing control.

Power management includes deep power-down, auto-precharge, controlled power ramp initialization, and CKE-intensive operation modes. The device requires external 240Ω ±1% ZQ reference resistor and supports tDQSCKDL/DM/DS timing alignment per JEDEC JESD209-2A.

Key Specifications

Pinout & Package

W979H2KBVX1E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA-134) package measuring 8.0 mm × 12.0 mm × 1.0 mm with 0.5 mm ball pitch. Ball assignment follows JEDEC MO-275AC standard layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L256M16RE-125 and IS42S16160F-6BLI, W979H2KBVX1E delivers LPDDR2-specific advantages: lower 1.2V operation, differential clock/strobe, ZQ calibration, and PASR-making it uniquely suited for power-constrained, thermally varied embedded systems requiring JEDEC LPDDR2 compliance.

Availability

W979H2KBVX1E is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment DRAM, and industrial HMI controller memory requiring stable component supply and industrial temperature qualification.

Supply support for W979H2KBVX1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for embedded and consumer markets.

The W979H series targets mobile and industrial LPDDR2 applications, designed to deliver JEDEC-compliant performance with enhanced power management features like PASR and deep power-down for extended battery life and thermal resilience.

FAQ

What is the ball count and package type of W979H2KBVX1E?

W979H2KBVX1E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA-134) package with 0.5 mm pitch, measuring 8.0 mm × 12.0 mm × 1.0 mm. This package is defined in JEDEC MO-275AC and supports high-density PCB layouts typical in mobile and embedded designs. The W979H2KBVX1E ball map includes dedicated VDD/VDDQ, VSS, differential clock/strobe, and CA/DQ signal groups aligned to minimize crosstalk and ensure signal integrity.

Does W979H2KBVX1E support ZQ calibration, and what external component is required?

Yes, W979H2KBVX1E supports both long and short ZQ calibration sequences initiated via MR23 commands. It requires an external 240Ω ±1% precision resistor connected to the ZQ pin, with recommended capacitive loading ≤10 pF. This enables dynamic adjustment of output driver impedance (RONPU/RONPD) to maintain signal fidelity across process, voltage, and temperature variations-critical for reliable high-speed LPDDR2-1066 operation.

What are the supported read and write latencies for W979H2KBVX1E?

W979H2KBVX1E supports fixed read latency (RL) of 3 and write latency (WL) of 1 at its rated 533 MHz clock frequency (1066 Mbps data rate). These values are programmed via mode registers and define the number of clock cycles between command issuance and first valid data transfer. The W979H2KBVX1E timing parameters tRCD and tRP are both specified at 3 cycles, ensuring consistent setup/hold margins for reliable command execution.

How does W979H2KBVX1E implement power savings in idle states?

W979H2KBVX1E provides three hierarchical power-saving modes: power-down (reduced IDD2N), deep power-down (lowest IDD6), and partial array self-refresh (PASR). PASR, controlled via MR16, allows selective refresh of only active memory banks-cutting refresh current by up to 50% compared to full-array self-refresh. The W979H2KBVX1E also supports CKE gating and automatic precharge to minimize active power during burst transfers.

Is W979H2KBVX1E compatible with standard LPDDR2 controllers?

Yes, W979H2KBVX1E is fully compliant with JEDEC JESD209-2A LPDDR2 specification and interoperates with standard LPDDR2 controllers from vendors including MediaTek, Qualcomm, NXP, and Texas Instruments. Its command set, timing parameters (e.g., tCCD = 2, tRTP = 2–3), electrical interface (HSUL_12, differential CK/DQS), and mode register structure match the standard-ensuring drop-in compatibility without controller firmware modification when used within specified voltage and temperature limits.