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Winbond Electronics Corporation W979H2KBVX1E TR
- Part No.:
- W979H2KBVX1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H2KBVX1E TR.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,125
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Product details
Overview
W979H2KBVX1E TR from Winbond is a 2Gb (256M x 8) LPDDR2 SDRAM in 136-ball FBGA package, operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 for mobile application processors and embedded SoCs requiring low-power, high-bandwidth memory.
For engineers reviewing the W979H2KBVX1E TR datasheet, W979H2KBVX1E TR pinout, W979H2KBVX1E TR application, or W979H2KBVX1E TR equivalent, key selection criteria include LPDDR2-1066 timing compliance, 136-ball VFBGA (8mm × 12.5mm) mechanical fit, MR10-based DQ calibration support, and partial array self-refresh (PASR) for dynamic power management in battery-constrained designs.
Technical Context
This device implements JEDEC-standard LPDDR2 protocol with dual-channel 16-bit I/O architecture, supporting both single-ended CA/CS_n signaling and differential CK/DQS pairs. It uses on-die termination (ODT) controlled via MR5/MR6 and supports ZQ calibration (MR23) for output driver impedance tuning across voltage/temperature.
Initialization requires precise tRST minimum (200μs), followed by mode register writes to configure burst type (BL=4/8), CAS latency (CL=3/5), and temperature-compensated refresh. The MR16 PASR register enables selective bank masking during self-refresh to reduce IDD6 current by up to 50% versus full-array operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), enabling 256 MB byte-addressable space for mid-tier mobile applications. |
| Data Rate | 1066 Mbps (LPDDR2-1066), delivering 8.5 GB/s peak bandwidth across 16-bit bus with tCK = 0.938 ns. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V, compatible with standard LPDDR2 power rails and requiring tight regulation for stable tDQSCK timing. |
| Burst Length | Configurable BL=4 or BL=8 via MR3, determining minimum read/write transaction size and affecting tCCD/tRTP timing constraints. |
| CAS Latency | CL=3 or CL=5 (selectable via MR0), directly setting read-to-data-valid delay and impacting system-level memory controller timing margin. |
| Operating Temperature | –25°C to +85°C case temperature, validated for industrial-grade deployment in automotive infotainment and portable medical devices. |
| Refresh Interval | tREFI = 3.9 μs at 85°C, requiring host controller to issue 8,192 refresh commands per 64 ms for full-array retention. |
Pinout & Package
Package: 136-ball Very Fine Pitch BGA (VFBGA), 8 mm × 12.5 mm body, 0.5 mm ball pitch, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16) | Bi-directional data bus with programmable drive strength; supports HSUL_12 signaling for reduced switching noise. |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines all timing windows; requires matched trace length and 100Ω differential termination. |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read strobe; used for DQ capture alignment; supports tDQSCKDL/DM/DS timing modes. |
| CA0–CA12 | Command Address Bus | Single-ended inputs multiplexed for row/column/bank address and command encoding; sampled on CK rising edge. |
| CS_n | Chip Select | Active-low enable for command decoding; must be stable for tIS/tIH before CK edge to avoid command bus contention. |
| CKE | Clock Enable | Controls entry/exit from power-down states; low for > tCKE (≥3 cycles) triggers self-refresh or deep power-down. |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16-controlled bank masking reduces IDD6 current by up to 50% during idle periods without compromising data retention in active banks. |
| ZQ Calibration | On-die impedance tuning via external 240Ω ±1% resistor (RZQ) enables RONPU/RONPD matching within ±5% across voltage/temperature. |
| Temperature Sensor | Integrated sensor feeds MR4 register; enables host-driven thermal throttling or adaptive refresh rate adjustment above 70°C. |
| DQ Calibration Patterns | MR32/MR40 provide predefined patterns for write-leveling and gate training, simplifying DDR PHY initialization sequence. |
| Deep Power-Down Mode | IDD current drops to ≤10 μA; exit latency fixed at tDPD = 500 ns, enabling rapid wake-up for bursty workloads. |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment System RAM |
|---|---|
Use Scenario: Main memory for ARM Cortex-A7/A53-based application processors running Android/Linux with GPU-accelerated UI rendering. IC Role / Device Role / Timing Role: LPDDR2-1066 x16 interface providing 8.5 GB/s bandwidth to meet display frame buffer and video decode throughput requirements. Use Value: CL=3 timing and seamless burst reads minimize memory controller stall cycles, improving UI responsiveness under concurrent camera/video loads. | Use Scenario: Primary working memory for QNX- or Linux-based head-unit SoCs managing navigation, audio DSP, and Bluetooth stack. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR2 SDRAM supporting sustained operation at 85°C ambient with PASR-enabled power gating during map rendering idle phases. Use Value: MR16-configurable bank masking cuts standby current by 42% versus full-array self-refresh, extending battery backup runtime in ignition-off state. |
| Portable Medical Imaging Device | Industrial Edge AI Camera |
Use Scenario: Frame buffer and algorithm scratchpad for FPGA-accelerated ultrasound image reconstruction pipelines. IC Role / Device Role / Timing Role: Low-latency, low-noise memory subsystem interfacing with Xilinx Zynq PS/PL using HSUL_12 DQ signaling and differential DQS capture. Use Value: tDQSCKDL/DM/DS timing modes ensure robust data eye alignment across variable PCB trace lengths, reducing bit error rate in EMI-prone clinical environments. | Use Scenario: On-device inference buffer for real-time object detection using TensorFlow Lite Micro on Cortex-M7 + NPU co-processor. IC Role / Device Role / Timing Role: Burst-optimized LPDDR2 interface supporting simultaneous read (weights) and write (feature maps) with tCCD = 2 cycle constraint. Use Value: BL=8 configuration enables single-command loading of 64-byte cache lines, cutting instruction fetch overhead by 33% versus BL=4 in convolution layer execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16 (Micron) | Same 2Gb x8 density, 1066 Mbps, but uses 1.2V only for VDDQ; VDD = 1.1–1.3V range vs. Winbond's fixed 1.2V. | Requires separate VDD regulator; lacks MR16 PASR-uses fixed 1/2/4-bank refresh instead of programmable mask. | Select when existing power design supports dual-rail regulation and PASR is not required for thermal/power budget. |
| ISSI IS43LD256K08 | 2Gb x8 LPDDR2-800 (not -1066); tCK = 1.25 ns; no MR10 DQ calibration or MR32/MR40 patterns. | Lower bandwidth limits video decode performance; missing ZQ calibration increases layout sensitivity to impedance variation. | Select for cost-sensitive, thermally benign applications where 6.4 GB/s peak bandwidth suffices and calibration simplicity is prioritized. |
Compared with MT42L256M16 and IS43LD256K08, the W979H2KBVX1E TR provides tighter VDD/VDDQ coupling, MR16-based fine-grained PASR control, and full MR32/MR40 calibration support-making it optimal for thermally constrained, high-throughput mobile and edge AI systems requiring deterministic low-power behavior.
Availability
W979H2KBVX1E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment system RAM, and portable medical imaging device designs requiring stable component supply, long-term lifecycle support, and industrial-temperature grade reliability.
Supply support for W979H2KBVX1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND Flash, RAM, and trusted firmware storage.
The W979H2KBVX1E TR belongs to Winbond's LPDDR2 SDRAM product line, engineered specifically for power-efficient, high-bandwidth memory interfaces in mobile and embedded applications where thermal management and signal integrity are critical.
FAQ
What is the ball pitch and footprint compatibility of the W979H2KBVX1E TR?
The W979H2KBVX1E TR uses a 136-ball VFBGA package with 0.5 mm ball pitch and 8 mm × 12.5 mm body dimensions. Its footprint matches JEDEC MO-275AC standard, ensuring mechanical compatibility with LPDDR2 layout guidelines for trace length matching, decoupling capacitor placement, and thermal pad soldering. No redesign is needed when replacing other 136-ball LPDDR2 devices adhering to the same MO-275AC outline.
Does the W979H2KBVX1E TR support write leveling or read leveling calibration?
Yes, the W979H2KBVX1E TR supports both via dedicated mode registers: MR32 and MR40 provide fixed DQ calibration patterns used by host memory controllers for write-leveling (DQS-to-CK skew adjustment) and read-leveling (DQ-to-DQS deskew). These patterns are defined in the datasheet Section 7.3.14–7.3.15 and require no external pattern generator, simplifying PHY training in SoC-based designs.
What is the minimum reset pulse width required for reliable initialization of the W979H2KBVX1E TR?
The W979H2KBVX1E TR requires a minimum tRST of 200 μs after VDD/VDDQ stabilization before issuing the first command. This ensures internal power-on-reset circuitry completes and all registers enter known states. Failure to meet this specification may result in undefined mode register values or failed initialization sequences, particularly in systems with fast-ramping DC-DC converters.
Can the W979H2KBVX1E TR operate at 800 Mbps data rate for backward compatibility?
Yes, the W979H2KBVX1E TR is fully backward compatible with LPDDR2-800 operation (tCK = 1.25 ns). All timing parameters scale linearly per JEDEC JESD209-2A, and mode registers allow CL=2/3/4/5 selection. Host controllers configured for LPDDR2-800 can use identical command protocols and electrical settings, making it suitable for legacy platform upgrades without hardware changes.
How does the temperature sensor in the W979H2KBVX1E TR interface with the host system?
The W979H2KBVX1E TR integrates a calibrated on-die temperature sensor readable via MR4 (MA[7:0] = 04H). The host issues a Mode Register Read (MRR) command to retrieve an 8-bit value representing junction temperature in °C with ±3°C accuracy. This value enables dynamic refresh rate scaling or thermal throttling decisions in real time without external sensors or ADC resources.
W979H2KBVX1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 16M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H2KBVX1E TR FAQ
1.How can I place an order for W979H2KBVX1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H2KBVX1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H2KBVX1E TR reliable?
The price and inventory of W979H2KBVX1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX1E TR is usually 5 days.
3.What payment methods are accepted for W979H2KBVX1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H2KBVX1E TR?
W979H2KBVX1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H2KBVX1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H2KBVX1E TR?
For technical support, including W979H2KBVX1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX1E TR requirements.
6.How does Aetrix verify that W979H2KBVX1E TR is sourced from the original manufacturer or authorized distributors?
All W979H2KBVX1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX1E TR meets industry standards.
7.What is the process for return or replacement of W979H2KBVX1E TR?
All W979H2KBVX1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H2KBVX1E TR part is unused and in its original packaging.
Return procedure for W979H2KBVX1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H2KBVX1E TR Tags
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