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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W979H2KBVX1I

Name: W979H2KBVX1I
Brand: Winbond Electronics Corporation
SKU: W979H2KBVX1I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W979H2KBVX1I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 134-VFBGA

Datasheet:: W979H2KBVX1I.pdf

Description:: IC DRAM 512MBIT HSUL 12 134VFBGA

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Product details

Overview

W979H2KBVX1I from Winbond Electronics is a 2Gb (256M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, 15ns tCK min, and -40°C to +85°C industrial temperature grade. It supports burst lengths of 4/8, on-die termination, ZQ calibration, and partial array self-refresh for mobile and embedded applications requiring low-power, high-bandwidth memory.

For engineers reviewing the W979H2KBVX1I datasheet, W979H2KBVX1I pinout, W979H2KBVX1I application, or W979H2KBVX1I equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), ball-mapped I/O configuration, MR register definitions, power-down modes, and direct alternative options aligned to JEDEC LPDDR2 JESD209-2A compliance.

Technical Context

This device implements a dual-bank LPDDR2 architecture with differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), HSUL_12 I/O interface, and programmable mode registers (MR0–MR63) for configuration of burst type, read/write latency, temperature compensation, and PASR. It supports seamless burst transitions, auto-precharge, and all-bank refresh with tREFI = 3.9μs at 85°C.

Power management includes four low-power states: Power-Down (entry via CKE low), Deep Power-Down (with retention loss), Self-Refresh (with automatic refresh), and Partial Array Self-Refresh (PASR) controlled by MR16. Calibration relies on external 240Ω ±1% ZQ resistor and internal DQ pattern registers (MR32/MR40).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256M words × 8-bit bus), enabling compact 256MB memory subsystems in space-constrained designs.
Data Rate	1066 Mbps (LPDDR2-1066), supporting 533 MHz clock frequency with tCK(min) = 15 ns for high-throughput video/audio buffering.
Supply Voltage	VDD/VDDQ = 1.2V ±0.06V, compatible with modern SoC I/O rails and reducing dynamic power vs. 1.8V DDR2.
Operating Temp	-40°C to +85°C (industrial grade), validated for sustained operation in automotive infotainment and industrial HMIs.
Timing Parameters	tRCD = tRP = 3 cycles, tRRD = 2 cycles, RL = 3/5, WL = 1 - defining minimum command spacing and latency for controller timing budgeting.
Interface Standard	JEDEC LPDDR2 JESD209-2A compliant, ensuring interoperability with ARM Cortex-A/R series memory controllers.
Power Modes	Supports Power-Down, Deep Power-Down, Self-Refresh, and PASR - enabling sub-100μA standby current in battery-backed systems.

Pinout & Package

W979H2KBVX1I uses a 136-ball VFBGA package (8mm × 11.5mm × 0.65mm height, 0.5mm ball pitch) with 12 I/O banks and dedicated VSS/VDD pairs per quadrant for noise suppression.

Pin/Terminal	Circuit Role	Design Meaning
CK_t / CK_c	Differential Clock Input	Accepts 266–533 MHz LVDS-style clock; defines all timing windows and must be terminated with 100Ω across pair.
DQS_t / DQS_c	Differential Strobe Input/Output	Source-synchronous timing reference for DQ reads/writes; enables precise DQ sampling under skew and jitter.
CA[0:5]	Command Address Bus	Carries row/column/bank address and command encoding (ACT, READ, WRITE, PRE, REF); sampled on CK rising edge.
DQ[0:7]	Data Bus	8-bit bidirectional data path using HSUL_12 driver; supports BL=4/8 with optional write data mask (DM).
CKE	Clock Enable	Asynchronous control: low → Power-Down entry; high → normal operation; critical for power-state sequencing.
ZQ	Calibration Reference	Connects to external 240Ω ±1% resistor; enables dynamic RONPU/RONPD adjustment to maintain signal integrity across voltage/temp.

Key Features

Feature	Design Value
On-Die Termination (ODT)	Programmable ODT resistors (75Ω/150Ω/200Ω) reduce stub reflections on high-speed DQ/DQS lines without external resistors.
ZQ Calibration	Internal one-time or periodic calibration against external ZQ resistor ensures consistent output drive strength and input threshold tracking over voltage/temperature.
Partial Array Self-Refresh (PASR)	MR16-controlled bank masking reduces self-refresh current up to 50% when only subset of memory is active - critical for battery life extension.
Temperature Sensor	Integrated sensor feeds MR4 (Device Temperature) register; enables thermal-aware refresh rate scaling (tREFI adjustment) per JEDEC spec.
HSUL_12 I/O Standard	Low-voltage (1.2V), low-swing differential interface minimizes EMI and crosstalk while maintaining 1066 Mbps signaling integrity.

Applications

Mobile Application Processor Memory	Automotive Infotainment System
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT-series) in smartphones and tablets. IC Role / Device Role / Timing Role: Primary LPDDR2 DRAM providing 533 MHz synchronous access to CPU/GPU; handles OS, app execution, and media decode buffers. Use Value: Enables 1066 Mbps bandwidth with 1.2V operation, reducing SoC power delivery complexity and thermal load versus LPDDR3.	Use Scenario: Graphics frame buffer and navigation map cache in head-unit systems with real-time UI rendering. IC Role / Device Role / Timing Role: Low-latency, high-reliability memory supporting OpenGL ES rendering pipelines and GPS data streaming under extended temperature cycling. Use Value: Industrial temp rating (-40°C to +85°C) and PASR ensure stable operation during vehicle cold starts and prolonged summer cabin exposure.
Industrial HMI Controller	Edge AI Inference Accelerator
Use Scenario: Local memory for ARM Cortex-A7/A53-based HMIs in factory automation panels and medical displays. IC Role / Device Role / Timing Role: Dual-bank LPDDR2 delivering concurrent access to GUI assets and real-time PLC I/O buffers with deterministic tRCD/tRP timing. Use Value: Power-Down and Deep Power-Down modes enable <100μA standby current during panel sleep, extending backup battery life.	Use Scenario: Weight/data buffer for micro-NPU co-processors executing CNN inference on sensor fusion data streams. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory interfacing directly to NPU DMA engines; supports burst chaining for continuous tensor tile loading. Use Value: Seamless burst read/write (tCCD = 2) and RL/WL optimization minimize pipeline stalls during multi-layer inference execution.

Mobile Application Processor Memory

Automotive Infotainment System

Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT-series) in smartphones and tablets.

IC Role / Device Role / Timing Role: Primary LPDDR2 DRAM providing 533 MHz synchronous access to CPU/GPU; handles OS, app execution, and media decode buffers.

Use Value: Enables 1066 Mbps bandwidth with 1.2V operation, reducing SoC power delivery complexity and thermal load versus LPDDR3.

Use Scenario: Graphics frame buffer and navigation map cache in head-unit systems with real-time UI rendering.

IC Role / Device Role / Timing Role: Low-latency, high-reliability memory supporting OpenGL ES rendering pipelines and GPS data streaming under extended temperature cycling.

Use Value: Industrial temp rating (-40°C to +85°C) and PASR ensure stable operation during vehicle cold starts and prolonged summer cabin exposure.

Industrial HMI Controller

Edge AI Inference Accelerator

Use Scenario: Local memory for ARM Cortex-A7/A53-based HMIs in factory automation panels and medical displays.

IC Role / Device Role / Timing Role: Dual-bank LPDDR2 delivering concurrent access to GUI assets and real-time PLC I/O buffers with deterministic tRCD/tRP timing.

Use Value: Power-Down and Deep Power-Down modes enable <100μA standby current during panel sleep, extending backup battery life.

Use Scenario: Weight/data buffer for micro-NPU co-processors executing CNN inference on sensor fusion data streams.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory interfacing directly to NPU DMA engines; supports burst chaining for continuous tensor tile loading.

Use Value: Seamless burst read/write (tCCD = 2) and RL/WL optimization minimize pipeline stalls during multi-layer inference execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L256M16RE-125:E	2Gb x16 organization (vs. x8), 125-cycle tCK min (1.6ns slower), no PASR support, same 1.2V supply and -40°C to +85°C rating.	Requires 16-bit bus width and lacks bank-masked self-refresh - unsuitable where memory bandwidth is constrained but power budget is strict.	Select when wider data bus simplifies controller routing and PASR is not required for system-level power optimization.
IS42S16160F-6BLI	Legacy DDR2 (not LPDDR2), 3.3V supply, 6ns tCK min, no differential clocks/strobes, no ZQ or ODT - incompatible electrical interface.	Only viable in legacy non-mobile designs with DDR2 controllers; cannot replace W979H2KBVX1I without PCB redesign and voltage rail changes.	Consider only for cost-sensitive industrial replacements where LPDDR2 features are unused and board revision is acceptable.

Compared with MT42L256M16RE-125:E and IS42S16160F-6BLI, W979H2KBVX1I provides superior power efficiency via PASR and ZQ calibration, native LPDDR2-1066 timing, and differential signaling - making it the optimal choice for new mobile/embedded designs prioritizing battery life and signal integrity.

Availability

W979H2KBVX1I is available at Aetrix Electronics and suitable for mobile application processor memory, automotive infotainment systems, industrial HMI controllers, and edge AI inference accelerators requiring stable component supply and long-term industrial-grade availability.

Supply support for W979H2KBVX1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.

W979H2KBVX1I belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for power-constrained, high-performance embedded systems requiring JEDEC-compliant low-voltage memory with advanced power management and calibration features.

FAQ

What is the maximum data rate supported by W979H2KBVX1I?

W979H2KBVX1I supports a maximum data rate of 1066 Mbps (LPDDR2-1066), corresponding to a 533 MHz clock frequency with tCK(min) = 15 ns. This is confirmed in the AC Operating Conditions section of the official datasheet (Rev. A01-004, p.72). The device achieves this rate using HSUL_12 I/O and differential CK/DQS signaling, and requires controller support for RL=3/5 and WL=1 configurations. W979H2KBVX1I does not support LPDDR2-800-only timing modes in its default configuration.

Does W979H2KBVX1I support on-die termination (ODT)?

Yes, W979H2KBVX1I supports programmable on-die termination with selectable values of 75Ω, 150Ω, or 200Ω, configured via Mode Register MR1. This feature eliminates the need for external termination resistors on DQ and DQS lines, improving signal integrity and reducing PCB layout complexity. ODT is enabled during reads/writes and can be dynamically controlled by the memory controller. W979H2KBVX1I implements ODT per JEDEC LPDDR2 specification and validates performance under HSUL_12 drive conditions.

What package type and ball count does W979H2KBVX1I use?

W979H2KBVX1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8mm × 11.5mm × 0.65mm with 0.5mm ball pitch. This is explicitly defined in the "Ball Assignment" and "Ball Configuration" sections (pp.7–8) of the datasheet. The package supports standard reflow profiles for lead-free assembly and includes dedicated VSS/VDD pairs per I/O quadrant to minimize switching noise. W979H2KBVX1I shares this mechanical footprint with other devices in the W979HxKB family.

How is ZQ calibration implemented in W979H2KBVX1I?

W979H2KBVX1I performs ZQ calibration by referencing an external 240Ω ±1% resistor connected to the ZQ pin. Calibration adjusts internal RONPU and RONPD driver impedances to maintain consistent output strength and input threshold tracking across voltage and temperature variations. The process is initiated via MRW command to MR23 and supports both long (ZQINIT) and short (ZQCAL) calibration sequences. W979H2KBVX1I documents ZQ timing examples and tolerance requirements in Section 7.4.23 of the datasheet.

What is the operating temperature range for W979H2KBVX1I?

W979H2KBVX1I is rated for industrial temperature operation from -40°C to +85°C, as specified in Section 8.2.3 ("Operating Temperature Conditions") of the datasheet. This range is validated for all DC and AC parameters, including IDD current, timing margins, and refresh intervals. The device integrates a temperature sensor accessible via MR4, enabling dynamic tREFI adjustment. W979H2KBVX1I meets JEDEC JESD209-2A requirements for LPDDR2 industrial-grade qualification.

W979H2KBVX1I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 134-VFBGA

Packaging:: Tray

Product Status:: Not For New Designs

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2-S4B

Memory Size:: 512Mbit

Memory Organization:: 16M x 32

Memory Interface:: HSUL_12

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: -

Voltage - Supply:: 1.14V ~ 1.3V, 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 134-VFBGA (10x11.5)

W979H2KBVX1I FAQ

1.How can I place an order for W979H2KBVX1I through Aetrix?

Please submit a Request for Quotation (RFQ) for W979H2KBVX1I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W979H2KBVX1I reliable?

The price and inventory of W979H2KBVX1I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX1I is usually 5 days.

3.What payment methods are accepted for W979H2KBVX1I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX1I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W979H2KBVX1I?

W979H2KBVX1I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W979H2KBVX1I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W979H2KBVX1I?

For technical support, including W979H2KBVX1I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX1I requirements.

6.How does Aetrix verify that W979H2KBVX1I is sourced from the original manufacturer or authorized distributors?

All W979H2KBVX1I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX1I meets industry standards.

7.What is the process for return or replacement of W979H2KBVX1I?

All W979H2KBVX1I units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX1I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W979H2KBVX1I part is unused and in its original packaging.

Return procedure for W979H2KBVX1I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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