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Winbond Electronics Corporation W979H2KBVX1I TR
- Part No.:
- W979H2KBVX1I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H2KBVX1I TR.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W979H2KBVX1I TR from Winbond is a 2Gb (256M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, 15ns tRCD/tRP timing, and 1.8V VDD2 for I/O. It implements partial array self-refresh, ZQ calibration, and temperature-sensing for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W979H2KBVX1I TR datasheet, W979H2KBVX1I TR pinout, W979H2KBVX1I TR application, or W979H2KBVX1I TR equivalent, key selection criteria include LPDDR2-1066 compliance, 96-ball VFBGA package with HSUL_12 I/O, burst length flexibility (BL=4/8), MR10-based DQ calibration, and PASR bank masking support.
Technical Context
This device belongs to Winbond's W979HxKB LPDDR2 family and supports dual-voltage operation (1.2V core + 1.8V I/O), differential CK/DQS signaling, and command/address (CA) bus termination via on-die termination (ODT). It implements mode register MR10 for ZQ calibration control and MR16 for partial array self-refresh (PASR) bank masking.
Timing compliance includes tRCD = tRP = 15ns at 533MHz clock (1066Mbps), tCCD = 2 cycles, RL = 3/5, WL = 1, and tDQSCKDL/DM/DS specifications aligned with JEDEC JESD209-2A. Power states include active, precharge power-down, deep power-down, and self-refresh with temperature-aware entry/exit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2Gb (256M words × 8-bit wide), enabling compact 256MB memory modules for space-constrained mobile PCBs. |
| Data Rate | 1066 Mbps (533MHz clock), meeting LPDDR2-1066 performance tier for mid-tier application processors. |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V (core/I/O), VDD2 = 1.8V ±0.1V (auxiliary I/O), requiring dual-rail PMIC support. |
| Access Timing | tRCD = tRP = 15ns, defining minimum row-to-column and precharge delays for reliable command sequencing. |
| Package | 96-ball VFBGA (8mm × 12.5mm × 0.6mm, 0.5mm pitch), compatible with fine-pitch mobile PCB assembly processes. |
| Temperature Range | -40°C to +85°C (Industrial grade), qualified for sustained operation in thermally demanding handheld environments. |
| Key Compliance | JEDEC JESD209-2A LPDDR2 standard, including HSUL_12 I/O interface, ZQ calibration, and PASR support. |
Pinout & Package
W979H2KBVX1I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8mm × 12.5mm footprint, and 0.6mm maximum height. Ball assignment follows JEDEC-standard LPDDR2 layout with dedicated CA[0:11], DQ[0:7], DQS_t/c, DM, CK_t/c, CKE, CS_n, and VDD/VSS rails.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Accepts 533MHz LVDS-style clock pair; timing reference for all command and data transfers. |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe pair aligned with DQ edges; enables precise DDR timing capture. |
| CA[0:11] | Command/address bus | 12-bit multiplexed bus carrying row/column/bank addresses and commands; terminated on-die. |
| DQ[0:7] | Data I/O | 8-bit bidirectional data bus using HSUL_12 driver; supports BL=4/8 bursts with write mask (DM). |
| CS_n | Chip select | Active-low enable controlling command decoding; allows multi-chip memory channel configuration. |
| CKE | Clock enable | Gates internal clock domains; controls entry/exit from power-down and self-refresh states. |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16-controlled bank masking reduces self-refresh current by up to 60% when only subset of banks are active. |
| ZQ Calibration | MR23-triggered on-die impedance tuning of output drivers (RONPU/RONPD) to maintain signal integrity across voltage/temperature. |
| Temperature Sensor | Integrated sensor feeds MR4 register; enables dynamic refresh rate adjustment (tREFI scaling) per JEDEC thermal management guidelines. |
| HSUL_12 I/O Interface | Low-voltage swing (≈0.4V) differential signaling reduces EMI and crosstalk vs. SSTL, critical for high-density mobile layouts. |
| Deep Power-Down Mode | IDD6 current < 10µA at 85°C; extends battery life during extended idle periods without losing memory contents. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., MediaTek MT67xx, Qualcomm Snapdragon 4xx) running Android OS. IC Role / Device Role / Timing Role: LPDDR2-1066 SDRAM providing 1.7GB/s bandwidth to CPU/GPU subsystems with low-latency access. Use Value: Enables smooth UI rendering and app multitasking while maintaining <1.2V core voltage and industrial-grade thermal reliability. | Use Scenario: Dedicated graphics memory for Mali-Txxx or PowerVR GPUs in 7–10 inch Android tablets. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting 1200×800@60Hz display with seamless burst reads/writes. Use Value: Delivers consistent pixel throughput with tRCD/tRP = 15ns and BL=8 support, minimizing visual tearing. |
| Automotive Infotainment RAM | IoT Gateway Application Memory |
Use Scenario: System memory in AEC-Q200 qualified infotainment head units requiring -40°C to +85°C operation. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 DRAM interfacing with NXP i.MX6 or Renesas R-Car SoCs. Use Value: Ensures data retention and command reliability under automotive thermal cycling, validated per JEDEC JESD209-2A. | Use Scenario: Runtime memory for Linux-based edge gateways (e.g., TI AM335x, Allwinner H3) managing sensor aggregation and protocol translation. IC Role / Device Role / Timing Role: Low-power SDRAM supporting frequent sleep/wake cycles via deep power-down and fast wake-up (<500ns). Use Value: Reduces average system power by >40% during idle intervals using PASR and IDD6 <10µA specification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-125:E | 2Gb LPDDR2, 125ps tAC, 1.2V only (no VDD2), 100-ball BGA, supports RL=4/6 but not MR10 ZQ reset. | Lacks VDD2 rail and PASR bank masking; requires external ZQ resistor; suited for cost-sensitive non-mobile designs. | Select when board-level ZQ calibration with external resistor is acceptable and industrial temperature range is not required. |
| ISSI IS42S16160J-6BLI | 256Mb × 16-bit (512Mb total), 1.8V-only interface, no temperature sensor, no PASR, tRCD = 20ns at 400MHz. | Lower density, slower speed, wider voltage tolerance; lacks LPDDR2-specific features like DQS gating and deep power-down. | Choose for legacy LPDDR2 systems where bandwidth and power optimization are secondary to supply simplicity. |
Compared with MT42L256M16RE-125:E and IS42S16160J-6BLI, W979H2KBVX1I TR delivers higher bandwidth (1066Mbps vs. 800/400Mbps), lower active power via dual-rail supply, and advanced power management (PASR, deep power-down, integrated temp sensor), making it optimal for thermally constrained mobile and embedded applications.
Availability
W979H2KBVX1I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment RAM requiring stable component supply across extended product lifecycles.
Supply support for W979H2KBVX1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.
The W979HxKB series targets mobile and portable electronics, delivering JEDEC-compliant LPDDR2 performance with enhanced power efficiency, thermal awareness, and system-level reliability for battery-powered devices.
FAQ
What is the operating voltage configuration for W979H2KBVX1I TR?
W979H2KBVX1I TR requires three distinct supply rails: VDD/VDDQ = 1.2V ±0.06V for core and I/O logic, and VDD2 = 1.8V ±0.1V for auxiliary I/O circuitry. This dual-voltage architecture enables LPDDR2-1066 performance while maintaining low core power consumption. The W979H2KBVX1I TR datasheet specifies strict decoupling and sequencing requirements between these rails to ensure stable initialization and command execution.
Does W979H2KBVX1I TR support partial array self-refresh (PASR)?
Yes, W979H2KBVX1I TR supports PASR via Mode Register MR16 (MA[7:0] = 10H), allowing selective self-refresh of individual banks or bank groups. This feature reduces self-refresh current by up to 60% compared to full-array refresh, directly extending battery life in mobile devices. The W979H2KBVX1I TR implements PASR per JEDEC JESD209-2A section 5.3.2, with bank mask bits defined in MR16[7:0].
What package type and dimensions does W979H2KBVX1I TR use?
W979H2KBVX1I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 12.5mm × 0.6mm with 0.5mm ball pitch. This JEDEC-standard LPDDR2 package supports high-density mobile PCB layouts and reflow-compatible assembly. The W979H2KBVX1I TR ball map aligns with LPDDR2 specification JESD209-2A Annex A, including dedicated HSUL_12 I/O, differential clocks/strobes, and on-die termination control pins.
How does W979H2KBVX1I TR handle impedance calibration?
W979H2KBVX1I TR performs on-die impedance calibration using an external 240Ω ±1% ZQ resistor connected to the ZQ pin. Calibration is initiated via Mode Register Write (MRW) to MR23 and adjusts RONPU/RONPD driver strengths to compensate for process/voltage/temperature variation. The W979H2KBVX1I TR supports long, short, and reset calibration sequences per JEDEC timing tables, ensuring signal integrity across 1066Mbps operation.
Is W979H2KBVX1I TR qualified for industrial temperature operation?
Yes, W979H2KBVX1I TR is rated for -40°C to +85°C operation and qualified per industrial temperature standards. Its electrical characteristics-including tRCD, tRP, IDD currents, and ZQ calibration stability-are fully specified across this range. The W979H2KBVX1I TR integrates a temperature sensor feeding MR4, enabling dynamic refresh rate adaptation per JEDEC thermal management guidelines, which is essential for sustained reliability in uncontrolled thermal environments.
W979H2KBVX1I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 16M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H2KBVX1I TR FAQ
1.How can I place an order for W979H2KBVX1I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H2KBVX1I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H2KBVX1I TR reliable?
The price and inventory of W979H2KBVX1I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX1I TR is usually 5 days.
3.What payment methods are accepted for W979H2KBVX1I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX1I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H2KBVX1I TR?
W979H2KBVX1I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H2KBVX1I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H2KBVX1I TR?
For technical support, including W979H2KBVX1I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX1I TR requirements.
6.How does Aetrix verify that W979H2KBVX1I TR is sourced from the original manufacturer or authorized distributors?
All W979H2KBVX1I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX1I TR meets industry standards.
7.What is the process for return or replacement of W979H2KBVX1I TR?
All W979H2KBVX1I TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX1I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H2KBVX1I TR part is unused and in its original packaging.
Return procedure for W979H2KBVX1I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H2KBVX1I TR Tags
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