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Winbond Electronics Corporation W979H2KBVX2E

Part No.:
W979H2KBVX2E
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
134-VFBGA
Datasheet:
AetrixW979H2KBVX2E.pdf
Description:
IC DRAM 512MBIT PAR 134VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,392

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Product details

Overview

W979H2KBVX2E from Winbond is a 512Mb LPDDR2-S4B mobile SDRAM with x16 data bus, 1.2V core/VDDQ supply, and 134-ball VFBGA (8mm × 12.5mm × 0.8mm) package. It supports 800Mbps/pin data rates (LPDDR2-800), tRCD/tRP = 3 cycles, and operates across -25°C to +85°C for smartphone application processors and embedded multimedia SoCs.

For engineers reviewing the W979H2KBVX2E datasheet, W979H2KBVX2E pinout, W979H2KBVX2E application, or W979H2KBVX2E equivalent, key selection criteria include LPDDR2-800 timing compliance, VFBGA-134 mechanical fit, partial array self-refresh (PASR) support, ZQ calibration capability, and MR10-based DQ calibration sequence.

Technical Context

This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit I/O architecture, on-die termination (ODT) controlled via MR3, and programmable burst lengths (BL=4/8). It uses HSUL_12 I/O signaling with differential CK/DQS pairs and single-ended CA/CS_n inputs.

Power management includes deep power-down (DPD), auto-precharge, and temperature-compensated refresh scheduling via MR4. Mode register configuration supports PASR bank masking (MR16), DQ calibration patterns (MR32/MR40), and MR63 reset command - all accessible through standard LPDDR2 command protocol.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density512Mb (32M words × 16-bit), enabling compact memory subsystems in space-constrained mobile PCBs
Data Rate800Mbps/pin (LPDDR2-800), supporting 1.6GB/s aggregate bandwidth for HD video playback and UI rendering
Supply VoltageVDD/VDDQ = 1.2V ±0.06V, compatible with modern SoC I/O rails and reducing dynamic power vs. DDR2
Timing (tRCD/tRP)3 clock cycles at 400MHz, defining minimum row-to-column and precharge delays for reliable command sequencing
Operating Temp-25°C to +85°C, validated for sustained operation in handheld consumer electronics enclosures
Package134-ball VFBGA (8.0mm × 12.5mm × 0.8mm, 0.5mm pitch), matching standard LPDDR2 footprint requirements
ZQ CalibrationSupports ZQ short/long calibration (MR23), enabling dynamic ODT/RON tuning for signal integrity over voltage/temperature drift

Pinout & Package

W979H2KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package per JEDEC MO-245AA, with 0.5mm ball pitch, 8.0mm × 12.5mm body size, and 0.8mm maximum height. Ball assignment follows LPDDR2-S4B standard layout for x16 configuration.

Pin/TerminalCircuit RoleDesign Meaning
DQ0–DQ15Data I/O bidirectional16-bit data bus using HSUL_12 signaling; requires matched trace length and controlled impedance (40Ω single-ended)
DQS0_t / DQS0_cDifferential strobe pairSource-synchronous read/write strobe with 250–400mV differential swing; used for DQ capture timing alignment
CK_t / CK_cDifferential clock inputSystem reference clock pair; defines all timing windows (tCK = 1.25ns for LPDDR2-800)
CA0–CA11Command/address bus12-bit multiplexed address/command bus (single-ended); latched on CK rising edge for row/column/bank selection
CS_nChip selectActive-low enable for command decoding; must be stable ≥1 cycle before command assertion
CKEClock enableControls entry/exit from power-down modes; high = active, low = gated clock domain
DM0–DM1Data maskPer-byte write mask for DQ0–7 and DQ8–15; sampled on write command to suppress invalid data

Key Features

FeatureDesign Value
LPDDR2-800 complianceFully conforms to JEDEC JESD209-2A specification, ensuring interoperability with application processors like Qualcomm Snapdragon and MediaTek MT series
Partial Array Self-Refresh (PASR)MR16-controlled bank masking reduces self-refresh current by up to 50% when only subset of banks are active, extending battery life
ZQ calibration supportEnables dynamic RON/ODT adjustment using external 240Ω ±1% resistor, maintaining signal integrity across voltage/temperature variation
Temperature sensor interfaceIntegrated thermal monitor (MR4) provides real-time die temperature readback for thermal throttling decisions in SoC firmware
DQ calibration patternsMR32/MR40 registers deliver predefined test patterns for board-level DQ eye diagram validation and timing margin analysis

Applications

Smartphone Application Processor MemoryTablet GPU Frame Buffer

Use Scenario: Main system memory for ARM-based application processors running Android OS with multi-tasking and camera preview pipelines.

IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit wide, low-latency random access to OS kernel, app binaries, and graphics textures.

Use Value: LPDDR2-800 bandwidth meets 1.6GB/s requirement for 1080p video decode + UI compositing without frame drops.

Use Scenario: Dedicated frame buffer for Mali-Txxx or PowerVR GPU in mid-tier tablets with dual-display output.

IC Role / Device Role / Timing Role: High-bandwidth, low-power memory subsystem buffering rendered frames and display list commands.

Use Value: PASR mode cuts self-refresh current during static UI display, extending standby time by >12% vs. full-bank refresh.

Automotive Infotainment Head UnitIndustrial HMI Controller

Use Scenario: Memory for QNX- or Linux-based infotainment systems with navigation, voice recognition, and rear-seat entertainment.

IC Role / Device Role / Timing Role: Primary working memory interfaced to i.MX6/8 or Renesas R-Car SoC via LPDDR2 PHY layer.

Use Value: -25°C to +85°C rating ensures reliable boot and operation across automotive cabin temperature extremes.

Use Scenario: Embedded controller memory in factory HMIs requiring deterministic response to PLC I/O interrupts.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting real-time OS task stacks and buffered serial communication buffers.

Use Value: tRCD = 3 cycle latency enables sub-4ns row activation, meeting <5ns interrupt response deadline for safety-critical I/O handling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT42L128M16D1KJ-107 WT:A1Gb density, same 134-ball VFBGA, LPDDR2-1066 speed grade (1066Mbps/pin), higher IDD active currentRequires SoC support for higher data rate; suitable where bandwidth >2GB/s needed for 4K UI or dual-camera processingSelect if system demands higher density or bandwidth; verify tRCD/tRP = 4 cycle timing compatibility
IS42S16160F-6BLI512Mb, 54-pin TSOP, DDR2-667 (not LPDDR2), 2.5V/2.6V supply, no ZQ or PASRLegacy DDR2 interface; incompatible with LPDDR2 PHY; limited to non-mobile, cost-sensitive industrial controllersOnly for brownfield designs retaining DDR2 controllers; not drop-in replaceable due to voltage, signaling, and command protocol mismatch

Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W979H2KBVX2E offers optimal balance of LPDDR2-800 performance, 134-ball VFBGA footprint, and advanced power features (PASR, ZQ, temperature sensing) for new mobile and embedded designs - avoiding both over-spec and legacy incompatibility.

Availability

W979H2KBVX2E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment head unit designs requiring stable component supply and long-term lifecycle support.

Supply support for W979H2KBVX2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.

W979H2KBVX2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for low-power, high-bandwidth memory subsystems in portable and embedded applications where battery life and thermal envelope are critical constraints.

FAQ

What is the exact memory organization of W979H2KBVX2E?

W979H2KBVX2E is organized as 32M words × 16 bits (512Mb total), with 8 banks, 2K rows per bank, and 2K columns per row. This configuration delivers efficient random-access latency while maintaining compatibility with standard LPDDR2 memory controllers in application processors such as MediaTek MT6592 and Samsung Exynos 4210.

Does W979H2KBVX2E support deep power-down mode?

Yes, W979H2KBVX2E supports deep power-down (DPD) mode per JEDEC JESD209-2A. Entry requires CKE low for ≥tDPD (100ns min), and exit requires CKE high for ≥tXPDLL (100ns min) before issuing any command. DPD reduces current to <10µA, making it ideal for extended standby in portable devices.

What is the required external ZQ resistor value for W979H2KBVX2E calibration?

W979H2KBVX2E requires a 240Ω ±1% external precision resistor connected between ZQ pin and VSS for ZQ calibration. This resistor sets the reference for RONPU/RONPD driver strength and ODT values; deviation beyond tolerance causes timing margin degradation and potential signal integrity failure.

Can W979H2KBVX2E operate at 1066Mbps/pin?

No, W979H2KBVX2E is rated for LPDDR2-800 (800Mbps/pin) only. Its timing parameters - including tRCD = 3, tRP = 3, and tRRD = 2 - are specified at 400MHz clock frequency (tCK = 1.25ns). Attempting LPDDR2-1066 operation violates datasheet limits and risks data corruption or initialization failure.

How is temperature monitoring implemented in W979H2KBVX2E?

W979H2KBVX2E integrates a calibrated on-die temperature sensor readable via MR4 (MA[7:0] = 04H). The sensor outputs a 7-bit digital code corresponding to die temperature in 2°C steps across -25°C to +125°C range, enabling host SoC firmware to trigger thermal throttling or fan control without external sensors.

W979H2KBVX2E Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
134-VFBGA
Packaging:
Tray
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR2
Memory Size:
512Mbit
Memory Organization:
16M x 32
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
-
Voltage - Supply:
1.14V ~ 1.95V
Operating Temperature:
-25°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
134-VFBGA (10x11.5)

W979H2KBVX2E FAQ

1.How can I place an order for W979H2KBVX2E through Aetrix?

Please submit a Request for Quotation (RFQ) for W979H2KBVX2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W979H2KBVX2E reliable?

The price and inventory of W979H2KBVX2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX2E is usually 5 days.

3.What payment methods are accepted for W979H2KBVX2E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX2E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W979H2KBVX2E?

W979H2KBVX2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W979H2KBVX2E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W979H2KBVX2E?

For technical support, including W979H2KBVX2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX2E requirements.

6.How does Aetrix verify that W979H2KBVX2E is sourced from the original manufacturer or authorized distributors?

All W979H2KBVX2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX2E meets industry standards.

7.What is the process for return or replacement of W979H2KBVX2E?

All W979H2KBVX2E units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX2E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W979H2KBVX2E part is unused and in its original packaging.

Return procedure for W979H2KBVX2E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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