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Winbond Electronics Corporation W979H2KBVX2E TR
- Part No.:
- W979H2KBVX2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H2KBVX2E TR.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,051
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Product details
Overview
W979H2KBVX2E TR from Winbond is a 2Gb (256M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, 15ns tCK min, and 1.8V VDD2 for I/O. It implements partial array self-refresh (PASR), ZQ calibration, and temperature sensor support for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W979H2KBVX2E TR datasheet, W979H2KBVX2E TR pinout, W979H2KBVX2E TR application, or W979H2KBVX2E TR equivalent, key selection criteria include LPDDR2-1066 timing compliance, 96-ball VFBGA package compatibility, PASR bank masking capability, and MR10/MR32/MR40 DQ calibration register support.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit prefetch architecture, supporting burst lengths of 4 and 8, read latencies of 3 and 5, and write latencies of 1. It uses HSUL_12 I/O signaling with differential CK/DQS and single-ended CA/CS_n inputs.
Power management includes deep power-down (tDPD = 100ns), auto-precharge, and controlled initialization sequences requiring tRST minimum of 200ns after VDD/VDD2 stabilization. Mode registers MR0–MR63 define device configuration, including PASR mask (MR16), DQ calibration patterns (MR32/MR40), and thermal monitoring (MR4).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits); supports 256MB byte-addressable space in x8 configuration |
| Data Rate | 1066 Mbps (LPDDR2-1066); requires tCK = 0.938ns min clock period for full-speed operation |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V; separate rails enable low-power I/O and stable core logic |
| Package | 96-ball VFBGA (6mm × 8mm × 0.6mm); 0.5mm ball pitch; RoHS-compliant, moisture-sensitive level 3 |
| Timing Parameters | tRCD = tRP = 3×tCK; tRRD = 2×tCK; tCCD = 2×tCK; enables high-bandwidth interleaved bank access |
| Power Management | Deep power-down current IDD6 ≤ 30µA at 85°C; PASR reduces self-refresh current by disabling unused banks |
| Calibration Support | ZQ calibration (MR23), DQ output driver tuning (MR32/MR40), and on-die termination (ODT) control via MR5/MR6 |
Pinout & Package
W979H2KBVX2E TR uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, 6 mm × 8 mm body size, and standard LPDDR2 ball assignment per JEDEC MO-245. Ball layout follows Winbond's documented mapping for W979HxKB series.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A13 | Address Inputs | Row/column address bits for 256M × 8 organization; A10/A11 used for bank select and mode register access |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; enables concurrent open-row operations across banks |
| CK_t / CK_c | Differential Clock | Edge-triggered system clock input; CK_t rising edge initiates command latching and data strobe alignment |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe; tracks DQ timing skew for reliable DDR capture at 1066 Mbps |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus using HSUL_12 drivers; supports burst lengths of 4 or 8 with wrap/non-wrap modes |
| DM | Data Mask | Per-byte write mask; asserts during write bursts to suppress selected DQ lanes without full command reissue |
| CS_n | Chip Select | Active-low command enable; multiple devices share CK/DQS but require individual CS_n assertion for command targeting |
| CKE | Clock Enable | Controls entry/exit from power-down states; low for >1 cycle enters power-down; high resumes operation |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-1066 Compliance | Fully conforms to JEDEC JESD209-2A spec with validated tDQSCKmin/tDQSCKmax timing margins at 1066 Mbps |
| Partial Array Self-Refresh (PASR) | MR16 enables selective bank masking during self-refresh, reducing IDD6 by up to 50% vs. full-array refresh |
| ZQ Calibration Engine | On-die impedance tuning via external 240Ω ±1% RZQ resistor; maintains RONPU/RONPD within ±15% over voltage/temperature |
| Integrated Temperature Sensor | MR4 reports die temperature in 2°C steps; enables dynamic refresh rate adjustment (tREFI scaling) per JEDEC thermal guidelines |
| DQ Calibration Patterns | MR32/MR40 provide programmable DQ timing offset patterns for fine-grained read/write eye optimization in high-speed layouts |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia workloads. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 1066 Mbps bandwidth to processor AXI bus via dedicated memory controller interface. Use Value: PASR and deep power-down reduce system-level standby current by >40% versus non-calibrated LPDDR2 parts, extending battery life. | Use Scenario: Shared main memory for multi-core Cortex-A7x CPU clusters and GPU in mid-tier Android tablets with 2–4GB RAM configurations. IC Role / Device Role / Timing Role: x8-configured LPDDR2 device operating in dual-channel mode to deliver sustained 1.7 GB/s aggregate bandwidth. Use Value: ZQ calibration ensures signal integrity across 6-layer PCBs with >80mm trace lengths, eliminating manual board-level termination tuning. |
| Automotive Infotainment Head Unit | Industrial HMI Display Controller |
Use Scenario: Memory subsystem for QNX- or Linux-based infotainment systems requiring AEC-Q200 stress reliability and extended temperature operation. IC Role / Device Role / Timing Role: High-reliability LPDDR2 buffer supporting video decode, navigation rendering, and voice assistant processing pipelines. Use Value: MR4 temperature reporting enables adaptive refresh scheduling that meets automotive ASIL-B thermal safety requirements without external sensors. | Use Scenario: Frame buffer and application runtime memory for ARM Cortex-R/M series controllers in factory HMIs with 7–15 inch TFT displays. IC Role / Device Role / Timing Role: Low-latency memory interface handling real-time graphics updates and deterministic UI response under RTOS scheduling. Use Value: tRCD = tRP = 3×tCK and seamless burst support minimize memory stall cycles, achieving <12µs worst-case read-to-use latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-125:E | 2Gb x16 LPDDR2, 125ps tCK min (800 Mbps), different ball map (96-ball VFBGA but non-identical pinout), no integrated temperature sensor | Requires external thermal monitoring for refresh adaptation; lacks MR4/MR16 functionality | Select when lower cost and 800 Mbps bandwidth suffice; verify PCB layout compatibility before substitution |
| IS42S16160F-6BLI | 2Gb x16 LPDDR2, 1066 Mbps, same 96-ball VFBGA package but distinct CA/CK routing and MR register map; no PASR or ZQ calibration | Needs external calibration circuitry and fixed refresh intervals; higher IDD6 in thermal environments | Choose only for legacy designs where Winbond-specific features are unused; not drop-in compatible |
Compared with MT42L256M16RE-125:E and IS42S16160F-6BLI, W979H2KBVX2E TR delivers tighter timing margins at 1066 Mbps, integrated thermal-aware refresh control, and on-die impedance tuning-reducing BOM count and improving yield in high-volume mobile designs.
Availability
W979H2KBVX2E TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, automotive infotainment head units, and industrial HMI display controllers requiring stable component supply and long-term LPDDR2 sourcing.
Supply support for W979H2KBVX2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, LPDDR SDRAM, and TrustME secure memory products.
The W979HxKB series targets mobile and embedded platforms needing JEDEC-compliant LPDDR2 with enhanced power efficiency, thermal awareness, and signal integrity features for next-generation portable electronics.
FAQ
What is the maximum data rate supported by W979H2KBVX2E TR?
W979H2KBVX2E TR supports a maximum data rate of 1066 Mbps per pin, corresponding to a minimum clock period (tCK) of 0.938 ns. This is validated per JEDEC JESD209-2A LPDDR2-1066 specification and confirmed in Winbond's A01-004 datasheet revision. The device achieves this rate using HSUL_12 I/O drivers and differential CK/DQS signaling with strict tDQSCK timing compliance.
Does W979H2KBVX2E TR support partial array self-refresh (PASR)?
Yes, W979H2KBVX2E TR supports PASR via Mode Register 16 (MR16), allowing selective bank masking during self-refresh mode. This feature reduces IDD6 current by disabling unused memory banks, delivering measurable power savings in asymmetric workloads. The function is fully documented in section 7.3.13 of the official datasheet and requires MRW command execution to configure.
What package type and ball count does W979H2KBVX2E TR use?
W979H2KBVX2E TR uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6 mm × 8 mm × 0.6 mm with 0.5 mm ball pitch. This matches JEDEC MO-245 mechanical standards and is shared across the W979HxKB family. Ball assignment follows Winbond's documented layout in section 4 ("Ball Assignment") of the A01-004 datasheet.
How is ZQ calibration implemented in W979H2KBVX2E TR?
W979H2KBVX2E TR implements ZQ calibration using an external 240Ω ±1% precision resistor connected to the ZQ pin. The device performs on-die RONPU/RONPD tuning during MR23 command execution, adjusting output driver impedance to maintain ±15% tolerance across voltage and temperature. Calibration timing and reset sequences are defined in sections 7.4.23.1–7.4.23.4 of the datasheet.
What is the role of MR4 in W979H2KBVX2E TR?
MR4 (Device Temperature register) in W979H2KBVX2E TR provides die temperature readback in 2°C increments via MRR command. This enables host systems to dynamically scale tREFI (refresh interval) per JEDEC thermal guidelines, improving reliability in thermally constrained environments. MR4 is accessible at MA[7:0] = 04H and requires no external sensor, as confirmed in section 7.3.6 of the datasheet.
W979H2KBVX2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 16M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H2KBVX2E TR FAQ
1.How can I place an order for W979H2KBVX2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H2KBVX2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H2KBVX2E TR reliable?
The price and inventory of W979H2KBVX2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX2E TR is usually 5 days.
3.What payment methods are accepted for W979H2KBVX2E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX2E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H2KBVX2E TR?
W979H2KBVX2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H2KBVX2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H2KBVX2E TR?
For technical support, including W979H2KBVX2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX2E TR requirements.
6.How does Aetrix verify that W979H2KBVX2E TR is sourced from the original manufacturer or authorized distributors?
All W979H2KBVX2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX2E TR meets industry standards.
7.What is the process for return or replacement of W979H2KBVX2E TR?
All W979H2KBVX2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H2KBVX2E TR part is unused and in its original packaging.
Return procedure for W979H2KBVX2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H2KBVX2E TR Tags
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