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Winbond Electronics Corporation W979H2KBVX2I TR
- Part No.:
- W979H2KBVX2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H2KBVX2I TR.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W979H2KBVX2I TR from Winbond is a 2Gb (256M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate (533 MHz clock), supporting 1.2V VDD/VDDQ, 15-bank architecture, and on-die termination with ZQ calibration. It serves as main memory in mobile SoC platforms requiring low-power, high-bandwidth memory interfaces - deployed in LTE/5G baseband processors and application processors.
For engineers reviewing the W979H2KBVX2I TR datasheet, W979H2KBVX2I TR pinout, W979H2KBVX2I TR application, or W979H2KBVX2I TR equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) support for dynamic power gating, temperature sensor integration, and HSUL_12 I/O interface compatibility with mobile PHYs.
Technical Context
This LPDDR2 SDRAM implements dual-channel 16-bit data bus (x16 configuration), supports burst lengths of 4 and 8, and uses differential CK/CK# and DQS/DQS# with single-ended CA/CS# inputs. Its mode register set (MR0–MR63) enables fine-grained control over refresh scheduling, PASR bank masking, DQ calibration patterns, and thermal management via MR4_Device Temperature.
The device executes full and partial self-refresh, deep power-down, and power-down modes with CKE-controlled entry/exit. Timing parameters are defined relative to tCK (1.87 ns min for 533 MHz), including tDQSCKmin/tDQSCKmax for read capture window alignment and tCCD = 2 for seamless burst chaining.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), enabling 256 MB byte-addressable space for mid-tier mobile applications |
| Data Rate | 1066 Mbps (533 MHz clock), meeting LPDDR2-1066 spec for high-throughput baseband and GPU memory access |
| Voltage Supply | 1.2V ±0.06V for VDD/VDDQ, compatible with mobile SoC core rail and reducing active power vs. LPDDR1 |
| Burst Length | Configurable BL=4 or BL=8, supporting both cache-line-aligned and streaming-access patterns |
| Refresh Interval | tREFI = 3.9 μs at 85°C, with distributed refresh support to minimize command bus contention |
| Temperature Sensor | Integrated analog thermal sensor (MR4 readback), enabling dynamic refresh rate scaling per JEDEC JESD209-2A |
| ZQ Calibration | On-die impedance tuning using external 240 Ω ±1% RZQ resistor, ensuring signal integrity across voltage/temperature corners |
Pinout & Package
W979H2KBVX2I TR is housed in a 134-ball FBGA package (10.5 mm × 12.5 mm × 1.0 mm height, 0.65 mm ball pitch), compliant with JEDEC MO-270CA. Ball assignment follows standard LPDDR2 layout with dedicated VDD/VSS pairs, HSUL_12 I/Os, and differential clock/strobe pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Reference edge for all command and data timing; requires matched trace length and 100 Ω differential termination |
| DQS / DQS# | Differential strobe input/output | Source-synchronous capture signal for DQ reads/writes; used for write leveling and read deskew |
| CA[0:10] | Command/address bus | Multiplexed row/column/bank address and command encoding; sampled on CK rising edge |
| DQ[0:15] | Data I/O (x16) | HSUL_12 bidirectional bus; supports 1066 Mbps with on-die ODT and ZQ-trimmed drive strength |
| DM[0:1] | Data mask | Per-byte write mask for DQ[0:7] and DQ[8:15]; active-high, sampled with write data |
| CKE | Clock enable | Asynchronous control for power-down, self-refresh, and deep power-down entry/exit |
| VDDQ / VDD | Power supply | Separate 1.2V supplies for I/O and core logic; decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Enables selective bank retention during idle periods via MR16, reducing self-refresh current by up to 60% vs. full-array mode |
| On-Die Termination (ODT) | Programmable termination resistors (RONPU/RONPD) calibrated via ZQ, eliminating external resistors and improving signal fidelity |
| Temperature-Compensated Refresh | MR4 reports die temperature; system controller adjusts tREFI dynamically to meet JEDEC thermal derating requirements |
| DQ Calibration Patterns | MR32/MR40 provide predefined patterns for write-leveling and gate training, simplifying PHY initialization sequence |
| Deep Power-Down Mode | Reduces standby current to ≤10 μA while preserving memory contents, ideal for long-duration sleep states in portable devices |
Applications
| Smartphone Baseband Memory | Tablet Application Processor Cache |
|---|---|
Use Scenario: LPDDR2 memory subsystem for Qualcomm Snapdragon or MediaTek MT67xx baseband SoCs handling LTE Cat-4/6 modem stacks and real-time protocol processing. IC Role / Device Role / Timing Role: Primary working memory interfacing directly with ARM Cortex-A7/A53 clusters and modem DSPs via 16-bit HSUL_12 bus. Use Value: 1066 Mbps bandwidth meets 3GPP TS 36.101 throughput requirements for simultaneous voice+data sessions; PASR cuts modem subsystem leakage by 42% during discontinuous reception (DRX). | Use Scenario: Main memory for Android tablets using Rockchip RK3368 or Allwinner A83T SoCs running multimedia OS with multi-app concurrency. IC Role / Device Role / Timing Role: Shared DRAM resource for GPU frame buffers, video decode engines, and application runtime heap, accessed via AXI interconnect. Use Value: Deep power-down mode extends battery life by 18% during screen-off periods; ZQ calibration ensures stable eye margin across -40°C to +85°C ambient range. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Memory for QNX- or Android Automotive-based head units integrating navigation, Bluetooth audio, and rear-camera video processing. IC Role / Device Role / Timing Role: Dual-role memory serving both safety-critical cluster rendering and infotainment application execution under ASIL-B partitioning. Use Value: Temperature sensor feedback enables adaptive refresh throttling during engine heat soak; tRCD = 3 cycle latency meets AUTOSAR timing constraints for UI thread responsiveness. | Use Scenario: Embedded memory in DIN-rail PLCs and HMIs using NXP i.MX6ULL or STMP3780 SoCs for factory-floor visualization and control logic. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time RTOS tasks and graphics framebuffer updates in extended-temperature industrial environments. Use Value: 15-bank architecture allows concurrent access to separate process data and GUI assets; MR5–MR8 programmable timing registers simplify custom timing adaptation for legacy display controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-125:E | 2Gb x16 LPDDR2-1250 (625 MHz), 1.2V, 15-bank, but lacks integrated temperature sensor and MR4 reporting | Requires external thermal monitoring for refresh scaling; suited for cost-sensitive consumer tablets without thermal management firmware | Select when higher bandwidth (1250 Mbps) is prioritized over thermal-aware power optimization |
| IS42S16160F-6BLI | 2Gb x16 LPDDR2-800 (400 MHz), 1.2V, 8-bank, no PASR or ZQ calibration; uses legacy SSTL_12 I/O | Limited to lower-performance SoCs; incompatible with HSUL_12 PHYs and requires external ODT resistors | Select only for legacy designs where pin compatibility with older IS42S family is mandatory and bandwidth <800 Mbps suffices |
Compared with W979H2KBVX2I TR, MT42L256M16RE-125:E delivers 17% higher peak bandwidth but forfeits thermal-aware refresh control, while IS42S16160F-6BLI trades 21% bandwidth and advanced power features for broader backward compatibility and lower BOM cost.
Availability
W979H2KBVX2I TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, automotive infotainment head units, and industrial HMI controllers requiring stable component supply, long-term lifecycle assurance, and qualified LPDDR2-1066 performance.
Supply support for W979H2KBVX2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W979H series targets mobile and automotive LPDDR2 applications, designed to deliver JEDEC-compliant performance with enhanced thermal management and power-state flexibility for battery-constrained platforms.
FAQ
What is the maximum data rate supported by the W979H2KBVX2I TR?
The W979H2KBVX2I TR supports a maximum data rate of 1066 Mbps, corresponding to a 533 MHz clock frequency (tCK = 1.87 ns minimum). This complies with the LPDDR2-1066 speed bin and is validated across the full industrial temperature range (-40°C to +85°C) with specified AC timing margins.
Does the W979H2KBVX2I TR include an integrated temperature sensor?
Yes, the W979H2KBVX2I TR integrates an analog temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). The sensor output is reported as a 4-bit code, enabling system controllers to adjust refresh intervals per JEDEC JESD209-2A thermal derating requirements without external components.
What package type and ball count does the W979H2KBVX2I TR use?
The W979H2KBVX2I TR uses a 134-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10.5 mm × 12.5 mm with 0.65 mm ball pitch. This JEDEC MO-270CA-compliant package supports high-density mobile PCB layouts and thermal dissipation requirements for LPDDR2 memory subsystems.
How does the W979H2KBVX2I TR implement on-die termination?
The W979H2KBVX2I TR implements programmable on-die termination (ODT) using RONPU and RONPD resistors calibrated via ZQ command against an external 240 Ω ±1% reference resistor. Calibration occurs at power-up and can be re-triggered, ensuring consistent 40–60 Ω termination across voltage and temperature variations.
What power-saving modes are supported by the W979H2KBVX2I TR?
The W979H2KBVX2I TR supports three low-power states: Power-Down (reduced IDD2N), Self-Refresh (retains data with minimal current), and Deep Power-Down (IDD6 ≤10 μA). All modes are entered via CKE deassertion and specific command sequences, with Deep Power-Down requiring MR63 reset to exit.
W979H2KBVX2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 16M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H2KBVX2I TR FAQ
1.How can I place an order for W979H2KBVX2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H2KBVX2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H2KBVX2I TR reliable?
The price and inventory of W979H2KBVX2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H2KBVX2I TR is usually 5 days.
3.What payment methods are accepted for W979H2KBVX2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H2KBVX2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H2KBVX2I TR?
W979H2KBVX2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H2KBVX2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H2KBVX2I TR?
For technical support, including W979H2KBVX2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H2KBVX2I TR requirements.
6.How does Aetrix verify that W979H2KBVX2I TR is sourced from the original manufacturer or authorized distributors?
All W979H2KBVX2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H2KBVX2I TR meets industry standards.
7.What is the process for return or replacement of W979H2KBVX2I TR?
All W979H2KBVX2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H2KBVX2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H2KBVX2I TR part is unused and in its original packaging.
Return procedure for W979H2KBVX2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H2KBVX2I TR Tags
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M24C02-WMN6TP
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M24C02-FMC6TG
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