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Winbond Electronics Corporation W979H6KBQX2I
- Part No.:
- W979H6KBQX2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 168-WFBGA
- Datasheet:
-
W979H6KBQX2I.pdf
- Description:
- IC DRAM 512MBIT 168
- Quantity:
- Payment:
- Shipping:
Inventory:4,264
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Product details
Overview
W979H6KBQX2I from Winbond is a 512Mb LPDDR2 SDRAM organized as 4 banks × 16M × 16-bit, operating at 1.2V core/VDDQ supply with 800 Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and CAS latencies of 3/5. It implements partial array self-refresh, ZQ calibration, and temperature sensor for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W979H6KBQX2I datasheet, W979H6KBQX2I pinout, W979H6KBQX2I application, or W979H6KBQX2I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), 134-ball VFBGA package (6.4mm × 8.0mm × 0.6mm), MR10-based DQ calibration, and support for seamless read/write bursts with tCCD = 2 cycles.
Technical Context
This device implements the JEDEC LPDDR2-S4B standard with dual-channel differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), HSUL_12 I/O interface, and command/address (CA) bus using single-ended signaling. It supports mode register write (MRW) to configure MR0–MR63, including MR10 for per-pin DQ calibration and MR16 for PASR bank masking.
Power management includes deep power-down (DPD), auto-precharge, and temperature-compensated self-refresh. Initialization requires precise tRAMP ≥ 200μs, followed by MRW sequences to set MR5–MR8 for basic configuration and MR10 for ZQ calibration-critical for signal integrity in high-speed mobile memory interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM compliant with JEDEC JESD209-2A |
| Capacity & Organization | 512Mb / 4 banks × 16M × 16-bit - supports 32-bit wide memory channels when paired |
| Data Rate | 800 Mbps/pin (LPDDR2-800) - enables 1.6 GB/s bandwidth per 16-bit interface |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V - matches mobile SoC I/O voltage rails and reduces dynamic power |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles - defines minimum row activation/precharge delay at 400MHz clock |
| Operating Temp | -40°C to +95°C (Industrial grade) - qualified for extended thermal environments in handheld devices |
| Package | 134-ball VFBGA (6.4mm × 8.0mm × 0.6mm, 0.5mm pitch) - optimized for thin mobile PCB stack-ups |
Pinout & Package
W979H6KBQX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.4mm × 8.0mm × 0.6mm with 0.5mm ball pitch. Pin assignment follows JEDEC LPDDR2-S4B layout for CA[0:9], DQ[0:15], DQS[0:1]_t/c, CK[0:1]_t/c, CKE, CS_n, and VREF pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Provides edge-aligned timing reference for all commands and data transfers; requires matched trace length and 100Ω differential termination |
| DQS_t / DQS_c | Differential strobe input/output | Source-synchronous capture of read data and launch of write data; enables DDR timing margin recovery |
| CA[0:9] | Command/address bus | Single-ended multiplexed bus carrying bank address, row/column address, and mode register commands |
| DQ[0:15] | Data I/O | 16-bit bidirectional data path using HSUL_12 drivers; supports write data mask (DM) per byte lane |
| CS_n | Chip select | Active-low enable for command decoding; allows multi-chip memory rank configuration |
| VREF | Reference voltage | 0.6V ±1% internal reference for CA and DQ input threshold setting; must be decoupled with 10nF capacitor |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | On-die RONPU/RONPD adjustment via external 240Ω resistor - maintains output impedance within ±10% across voltage/temperature |
| Partial Array Self-Refresh (PASR) | MR16-controlled bank masking - reduces self-refresh current up to 50% by refreshing only active memory regions |
| Temperature Sensor | Integrated analog sensor with MR4 readback - enables dynamic refresh rate scaling (tREFI) based on die temperature |
| Seamless Burst Transfers | tCCD = 2-cycle constraint - allows back-to-back read/write bursts without intervening NOP or precharge, improving throughput |
| Deep Power-Down Mode | Sub-10μA retention current - extends battery life during display-off or suspend states in portable devices |
Applications
| Smartphone Application | Tablet System Memory |
|---|---|
Use Scenario: Main memory for application processor in mid-tier Android smartphones with 2GB total RAM (dual W979H6KBQX2I). IC Role / Device Role / Timing Role: LPDDR2 channel interface providing 1.6 GB/s bandwidth at 400MHz clock; handles OS, app, and graphics buffer loads. Use Value: Low-voltage 1.2V operation and deep power-down reduce standby current to <5μA per chip, extending battery life between charges. | Use Scenario: Shared system memory for ARM-based tablet SoC running multimedia OS with GPU acceleration. IC Role / Device Role / Timing Role: Dual-rank LPDDR2 memory subsystem supporting 32-bit data path and burst-8 reads for video decode buffers. Use Value: PASR and temperature-aware refresh cut average self-refresh power by 35% versus full-array refresh, lowering thermal load in sealed enclosures. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Memory for automotive-grade infotainment head unit with Android Automotive OS and real-time navigation. IC Role / Device Role / Timing Role: Industrial-temperature (-40°C to +95°C) LPDDR2 component enabling reliable boot and UI responsiveness under thermal cycling. Use Value: MR10-based DQ calibration ensures signal integrity across wide temperature range, eliminating timing closure issues in CAN/FlexRay coexistence layouts. | Use Scenario: Embedded HMI controller in factory-floor panel PC requiring long-term reliability and ESD robustness. IC Role / Device Role / Timing Role: Primary memory for Cortex-A series MCU with hardware memory controller supporting LPDDR2-800 timing parameters. Use Value: 134-ball VFBGA footprint enables compact 6-layer PCB design while maintaining >20k-hour MTBF under continuous operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1Gb density, 168-ball WFBGA, LPDDR2-1066 speed grade; higher power in DPD mode (15μA vs. 8μA) | Supports higher bandwidth systems requiring >2GB total RAM; less suitable for space-constrained 134-ball layouts | Select when bandwidth >1.6 GB/s is required and PCB area permits larger package |
| IS42S16160F-6BLI | 512Mb, 64-pin TSOP, DDR2 (not LPDDR2); 2.5V VDD, no ZQ/PASR/temp sensor; tRCD = 4 cycles | Legacy industrial designs with non-mobile controllers; incompatible with LPDDR2 command protocol or low-voltage rails | Only for DDR2 controller migration where LPDDR2 features are unnecessary and board redesign is impractical |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W979H6KBQX2I delivers optimal balance of density, power efficiency, and mobile-optimized features in the smallest VFBGA footprint-making it the preferred choice for new smartphone, tablet, and automotive infotainment designs requiring JEDEC LPDDR2-S4B compliance.
Availability
W979H6KBQX2I is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC integration, and automotive infotainment platforms requiring stable component supply, long-lifecycle support, and industrial-temperature qualification.
Supply support for W979H6KBQX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.
W979H6KBQX2I belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile applications requiring JEDEC-compliant high-speed memory with advanced power management and calibration features.
FAQ
What is the package type and dimensions of the W979H6KBQX2I?
The W979H6KBQX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.4mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This compact footprint meets mobile PCB thickness and routing density requirements while supporting thermal dissipation in handheld devices. The W979H6KBQX2I pinout is defined in section 4.1 of its official datasheet and aligns with JEDEC LPDDR2-S4B mechanical standards.
Does the W979H6KBQX2I support ZQ calibration, and how is it implemented?
Yes, the W979H6KBQX2I supports on-die ZQ calibration via MR23 and MR24 commands to adjust output driver impedance (RONPU/RONPD). It requires an external 240Ω ±1% resistor connected between ZQ pin and VSS. Calibration occurs during initialization and can be re-triggered in-system. This feature ensures consistent signal integrity across voltage and temperature variations, a critical capability for the W979H6KBQX2I in high-speed mobile memory interfaces.
What LPDDR2 speed grade and timing parameters does the W979H6KBQX2I support?
The W979H6KBQX2I is rated for LPDDR2-800 operation at 400MHz clock frequency, with tRCD = tRP = 3 cycles and tRRD = 2 cycles. It supports CAS latencies of CL=3 and CL=5, burst lengths of BL=4 and BL=8, and seamless burst transitions with tCCD = 2. These parameters are fully specified in the W979H6KBQX2I datasheet sections 7.4.1 and 7.4.3, ensuring compatibility with standard LPDDR2 memory controllers.
How does the W979H6KBQX2I handle power management for battery-powered devices?
The W979H6KBQX2I provides multiple low-power modes: power-down (IDD2P), self-refresh (IDD4R), partial array self-refresh (IDD6), and deep power-down (IDD7). In deep power-down, current drops below 10μA. PASR (via MR16) allows selective bank refresh, reducing IDD6 by up to 50%. These features make the W979H6KBQX2I especially effective in smartphones and tablets where runtime and thermal management are critical design constraints.
Is the W979H6KBQX2I compatible with standard LPDDR2 memory controllers?
Yes, the W979H6KBQX2I is fully compliant with JEDEC JESD209-2A LPDDR2-S4B specification and interoperates with industry-standard LPDDR2 memory controllers from Qualcomm, MediaTek, and NXP. Its command encoding, timing diagrams, and electrical characteristics-including HSUL_12 I/O, differential clock/strobe, and CA bus protocol-are identical to the standard. Controller initialization sequences for the W979H6KBQX2I follow JEDEC-recommended power ramp and MRW flow.
W979H6KBQX2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 168-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 168-WFBGA (12x12)
W979H6KBQX2I FAQ
1.How can I place an order for W979H6KBQX2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H6KBQX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H6KBQX2I reliable?
The price and inventory of W979H6KBQX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H6KBQX2I is usually 5 days.
3.What payment methods are accepted for W979H6KBQX2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H6KBQX2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H6KBQX2I?
W979H6KBQX2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H6KBQX2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H6KBQX2I?
For technical support, including W979H6KBQX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H6KBQX2I requirements.
6.How does Aetrix verify that W979H6KBQX2I is sourced from the original manufacturer or authorized distributors?
All W979H6KBQX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H6KBQX2I meets industry standards.
7.What is the process for return or replacement of W979H6KBQX2I?
All W979H6KBQX2I units undergo pre-shipment inspection (PSI). If there is an issue with W979H6KBQX2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H6KBQX2I part is unused and in its original packaging.
Return procedure for W979H6KBQX2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H6KBQX2I Tags
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