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Winbond Electronics Corporation W979H6KBVX1E
- Part No.:
- W979H6KBVX1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H6KBVX1E.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W979H6KBVX1E from Winbond is a 4Gb (512M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, 15ns tCK min, and 1.8V VDD2 for I/O. It implements 8 banks, supports burst lengths of 4/8/16, and features ZQ calibration, partial array self-refresh (PASR), and temperature sensor for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W979H6KBVX1E datasheet, W979H6KBVX1E pinout, W979H6KBVX1E application, or W979H6KBVX1E equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3), HSUL_12 I/O interface, 178-ball FBGA package with defined ball assignment, and MR10/MR32/MR40 DQ calibration support.
Technical Context
This device implements JEDEC-standard LPDDR2 protocol with dual-channel differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), supporting RL=3/WL=1 and RL=5/WL=2 configurations. It uses HSUL_12 signaling for DQ/DM and CA buses, with programmable drive strength controlled via ZQ calibration (MR23/MR24) and on-die termination (RONPU/RONPD).
Power management includes deep power-down (DPD), auto-precharge, and partial array self-refresh (PASR) enabled through MR16 bank masking. Temperature sensing (MR4) and dynamic DQ calibration (MR32/MR40) are integrated to maintain signal integrity across voltage and thermal variation in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM – low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-2A. |
| Capacity & Organization | 4Gb / 512M x 8 – supports 8-bit data bus width; enables compact memory subsystems in space-constrained mobile PCBs. |
| Data Rate | 1066 Mbps (LPDDR2-1066) – requires tCK = 1.875 ns min; supports high-bandwidth video and UI rendering in application processors. |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V – dual-rail operation isolates core logic from I/O, reducing noise coupling. |
| Timing Parameters | tRCD = tRP = 3 cycles; tRRD = 2 cycles; tCCD = 2 cycles – defines minimum command spacing for reliable bank activation and precharge. |
| Interface Standard | HSUL_12 I/O – high-speed ultra-low-voltage signaling with 12Ω nominal output impedance; compatible with mobile SoC PHYs. |
| Package | 178-ball FBGA (12mm × 10mm × 1.0mm, 0.65mm pitch) – industry-standard footprint for LPDDR2 modules and direct SoC attachment. |
Pinout & Package
W979H6KBVX1E uses a 178-ball fine-pitch FBGA package with 0.65 mm ball pitch and 12 mm × 10 mm body size. Ball assignment follows JEDEC LPDDR2 layout conventions with dedicated VDD/VSS pairs, differential clock/strobe groups, and CA/DQ/DM busing optimized for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Provides edge-aligned reference for all command and data transfers; requires matched trace length and 100Ω differential termination. |
| DQS_t / DQS_c | Differential Strobe Input/Output | Source-synchronous timing reference for DQ read/write; used for write leveling and read capture alignment. |
| CA[0:9] | Command Address Bus | Carries row/column/bank address and command encoding (ACT, READ, WRITE, PRE, REF); sampled on CK rising edge. |
| DQ[0:7] | Data Bus | 8-bit bidirectional data path using HSUL_12; supports BL=4/8/16 with wrap/non-wrap burst modes. |
| DM[0:0] | Data Mask | Per-byte mask for write operations; active-high; enables selective byte write without read-modify-write overhead. |
| CKE | Clock Enable | Asynchronous control to gate internal clock domains; used for power-down entry/exit and self-refresh control. |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic RONPU/RONPD adjustment via external 240Ω resistor; maintains consistent output impedance across voltage/temperature drift. |
| Partial Array Self-Refresh (PASR) | Reduces refresh current up to 75% by masking inactive banks (MR16); extends battery life during display-off or background app states. |
| Integrated Temperature Sensor | Monitors die temperature via MR4 register; enables host-controlled refresh rate scaling and thermal throttling decisions. |
| DQ Calibration Patterns | MR32/MR40 provide configurable DQ timing offset patterns; compensates for board-level skew between DQS and DQ groups. |
| Deep Power-Down Mode | Reduces standby current to ≤10 µA; retains memory state while disabling all internal clocks and regulators for ultra-low-leakage sleep. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors running Android/iOS with multi-tasking and HD video playback. IC Role / Device Role / Timing Role: LPDDR2-1066 SDRAM providing 8.5 GB/s peak bandwidth to CPU/GPU clusters via 8-bit bus. Use Value: Enables concurrent app switching and 1080p decode/encode with tRCD/tRP = 3-cycle latency and PASR-driven power savings. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs rendering UI compositing and gaming textures. IC Role / Device Role / Timing Role: Low-latency frame buffer with HSUL_12 DQ interface synchronized to GPU memory controller's DQS strobe. Use Value: Supports seamless 60 fps rendering using burst-length-8 reads and auto-precharge to minimize row activation overhead. |
| Automotive Infotainment Display Cache | IoT Edge Device Local Storage |
Use Scenario: High-reliability display cache in automotive head units requiring AEC-Q200 stress tolerance and thermal robustness. IC Role / Device Role / Timing Role: Non-volatile-cached memory subsystem with temperature sensor feedback to adjust refresh rate per JEDEC LPDDR2 thermal derating rules. Use Value: Maintains display integrity across -40°C to +105°C ambient via MR4 temperature reporting and MR10 calibration updates. | Use Scenario: Local working memory for Cortex-M7 microcontrollers performing real-time sensor fusion and OTA firmware staging. IC Role / Device Role / Timing Role: Low-power SDRAM supporting deep power-down mode and wake-on-IRQ with sub-10µA retention current. Use Value: Extends battery life in battery-operated edge nodes by >40% versus standard LPDDR2 via DPD entry/exit and PASR bank masking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16LX-107:J | 1.2V-only supply (no VDD2 rail); 128M x 16 organization; 107-ball FBGA; tCK = 1.87 ns min. | Requires 16-bit bus width and single-rail power design; lacks integrated temperature sensor and PASR. | Select when board layout supports wider bus and thermal monitoring is handled externally. |
| EM6AB160BS-107H | LPDDR2-1066 with 256M x 16 organization; 149-ball FBGA; supports ZQ but no MR4 temperature register. | Higher density per package but incompatible pinout and no on-die thermal sensing for adaptive refresh. | Choose for cost-sensitive designs where thermal compensation is implemented in host firmware. |
Compared with MT42L128M16LX-107:J and EM6AB160BS-107H, W979H6KBVX1E provides unique integration of temperature sensing (MR4), PASR (MR16), and dual-rail supply for improved noise isolation-critical for high-resolution mobile displays and thermally constrained edge devices.
Availability
W979H6KBVX1E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment display cache requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W979H6KBVX1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND flash, RAM, and mobile DRAM.
The W979H6KB series targets mobile and embedded systems requiring JEDEC-compliant LPDDR2 with enhanced power management, thermal awareness, and signal integrity features for next-generation portable electronics.
FAQ
What is the operating voltage configuration for W979H6KBVX1E?
W979H6KBVX1E operates with two independent supply rails: VDD/VDDQ at 1.2V ±0.06V for core and I/O logic, and VDD2 at 1.8V ±0.1V for high-speed I/O drivers. This dual-rail architecture reduces switching noise coupling between memory core and data bus, improving signal integrity in dense mobile PCB layouts. The specification strictly requires separate decoupling for each rail, as confirmed in Section 8.2.1 of the official datasheet.
Does W979H6KBVX1E support partial array self-refresh (PASR)?
Yes, W979H6KBVX1E supports PASR via Mode Register 16 (MR16), allowing selective bank masking during self-refresh to reduce current draw by up to 75%. This feature is explicitly documented in Section 7.4.18 and Table 7.3.13 of the datasheet. PASR is activated by writing appropriate bank mask bits to MR16, enabling dynamic power optimization in smartphone display-off or background task scenarios.
What is the ball count and package type of W979H6KBVX1E?
W979H6KBVX1E uses a 178-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 12 mm × 10 mm × 1.0 mm with 0.65 mm ball pitch. Ball assignment is defined in Section 4 ("Ball Assignment") and Section 5 ("Ball Configuration") of the datasheet, confirming compatibility with standard LPDDR2 layout guidelines and JEDEC MO-275AC mechanical specifications.
How does W979H6KBVX1E implement ZQ calibration?
W979H6KBVX1E performs ZQ calibration using an external 240Ω ±1% resistor connected to the ZQ pin, adjusting RONPU and RONPD output driver impedances per JEDEC LPDDR2 requirements. Calibration is triggered via MRW to MR23/MR24, with timing defined in Section 7.4.23. The process corrects for voltage and temperature drift, ensuring stable HSUL_12 signaling integrity across operating conditions as verified in Section 8.2.6.3.
Is there an integrated temperature sensor in W979H6KBVX1E?
Yes, W979H6KBVX1E includes an on-die temperature sensor accessible via Mode Register 4 (MR4), which reports die temperature in 5°C increments. This sensor enables host-controlled thermal management, including adaptive refresh rate scaling per JEDEC LPDDR2 thermal derating rules. The functionality and readout method are fully specified in Section 7.4.20 and Table 7.3.6 of the official datasheet.
W979H6KBVX1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H6KBVX1E FAQ
1.How can I place an order for W979H6KBVX1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H6KBVX1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H6KBVX1E reliable?
The price and inventory of W979H6KBVX1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H6KBVX1E is usually 5 days.
3.What payment methods are accepted for W979H6KBVX1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H6KBVX1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H6KBVX1E?
W979H6KBVX1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H6KBVX1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H6KBVX1E?
For technical support, including W979H6KBVX1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H6KBVX1E requirements.
6.How does Aetrix verify that W979H6KBVX1E is sourced from the original manufacturer or authorized distributors?
All W979H6KBVX1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H6KBVX1E meets industry standards.
7.What is the process for return or replacement of W979H6KBVX1E?
All W979H6KBVX1E units undergo pre-shipment inspection (PSI). If there is an issue with W979H6KBVX1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H6KBVX1E part is unused and in its original packaging.
Return procedure for W979H6KBVX1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H6KBVX1E Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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