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Winbond Electronics Corporation W979H6KBVX1E TR
- Part No.:
- W979H6KBVX1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H6KBVX1E TR.pdf
- Description:
- IC DRAM 512MBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W979H6KBVX1E TR from Winbond is a 4Gb (512M x 8) LPDDR2 SDRAM in 136-ball FBGA package, operating at 1066 Mbps data rate with 1.2V core/VDDQ supply and -25°C to +85°C industrial temperature range. It supports burst lengths of 4/8, programmable CAS latency (CL=3/5), and partial array self-refresh for power optimization in mobile and embedded applications.
For engineers reviewing the W979H6KBVX1E TR datasheet, W979H6KBVX1E TR pinout, W979H6KBVX1E TR application, or W979H6KBVX1E TR equivalent, key selection criteria include LPDDR2-1066 timing compliance, HSUL_12 I/O interface, ZQ calibration support, and bank masking capability for dynamic power management.
Technical Context
This device implements the JEDEC-standard LPDDR2 interface with differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), HSUL_12 single-ended command/address (CA) and data mask (DM) signaling, and on-die termination calibrated via external 240Ω ±1% ZQ resistor. It supports all LPDDR2 commands including Activate, Read/Write, Precharge, Refresh, and Deep Power-Down.
Internal architecture includes eight banks, 16K rows per bank, and mode registers (MR0–MR63) for configuration of burst type, CAS latency, temperature compensation, PASR, DQ calibration patterns, and ZQ calibration control. Initialization requires controlled power ramp, CKE assertion, and mode register programming before normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (512M words × 8-bit wide) |
| Data Rate | 1066 Mbps (LPDDR2-1066, tCK = 0.938 ns) |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; VREF = 0.6V ±1% DC |
| CAS Latency | Programmable CL = 3 or 5 cycles (RL = 3 or 5) |
| Burst Length | Configurable BL = 4 or 8; supports seamless burst and interruptible access |
| Operating Temp | -25°C to +85°C (industrial grade, meets JEDEC JESD22-A104) |
| Refresh Interval | 32 ms max at 85°C; supports All-Bank and Partial Array Self-Refresh (PASR) |
| I/O Interface | HSUL_12 for CA/CS_n/CKE/DM; differential CK_t/CK_c and DQS_t/DQS_c |
Pinout & Package
Package: 136-ball Fine-Pitch Ball Grid Array (FBGA), 10 mm × 14 mm × 1.0 mm body, 0.65 mm ball pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Power Supply | 1.2V core and I/O supply; separate pins for noise isolation |
| VSS | GND | Signal and power ground; multiple balls for low-impedance return path |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible differential clock pair; defines system timing reference |
| DQS_t / DQS_c | Differential Strobe Input/Output | Source-synchronous data strobe for read/write timing alignment |
| CA[0:11] | Command/Address Bus | 12-bit multiplexed address/command bus using HSUL_12 signaling |
| DQ[0:7] | Data Bus | 8-bit bidirectional data bus with programmable drive strength and ZQ-calibrated ODT |
| DM | Data Mask | Single-bit write mask for byte-level data suppression during burst writes |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock domain; controls power-down entry/exit |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic on-die termination tuning using external 240Ω resistor for impedance matching across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces refresh current up to 75% by refreshing only active memory banks, critical for battery-powered devices |
| Temperature Sensor & MR4 | On-die thermal sensor feeds MR4_Device Temperature register for adaptive refresh rate adjustment |
| HSUL_12 I/O Standard | Provides 1.2V low-voltage signaling with reduced EMI and crosstalk versus LVCMOS, compatible with LPDDR2 controllers |
| Deep Power-Down Mode | Enters ultra-low-current state (<10 µA) with full context retention; exit time ≤100 µs |
| Programmable Burst Type | Supports sequential or interleaved burst ordering via MR1, enabling optimal cache line access patterns |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment DRAM |
|---|---|
Use Scenario: Main memory for ARM-based application processors in mid-tier smartphones requiring high bandwidth and low standby power. IC Role / Device Role / Timing Role: LPDDR2-1066 SDRAM providing 8.5 GB/s peak bandwidth with CL=5 and BL=8 burst configuration. Use Value: Enables smooth UI rendering and multitasking while maintaining <150 µA self-refresh current at 85°C via PASR and temperature-aware refresh. | Use Scenario: Graphics frame buffer and OS runtime memory in automotive head units with extended temperature requirements. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM interfacing with NXP i.MX6/8 SoCs via HSUL_12 CA bus and differential DQS. Use Value: Guarantees reliable operation from -25°C to +85°C with validated tRCD/tRP = 3-cycle timing and robust ZQ calibration stability. |
| Industrial HMI Controller Memory | Medical Imaging Data Buffer |
Use Scenario: Real-time display controller memory in factory HMIs where long-term component availability and thermal resilience are mandatory. IC Role / Device Role / Timing Role: Primary working memory supporting 60 Hz GUI updates with burst reads aligned to pixel line fetches. Use Value: Delivers deterministic tDQSCKmin/tDQSCKmax timing (±50 ps) for jitter-sensitive video pipelines and supports MRW reset for field firmware recovery. | Use Scenario: High-speed acquisition buffer in portable ultrasound systems capturing real-time RF echo data streams. IC Role / Device Role / Timing Role: Low-latency write buffer accepting 1066 Mbps serial data from ADC interfaces with write-data-mask precision. Use Value: Minimizes write-to-read turnaround (tCCD = 2 cycles) and enables seamless burst writes followed by immediate precharge for pipelined data ingestion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT:D | 1.2V 2Gb (128M×16) LPDDR2, 1066 Mbps, 144-ball FBGA, same CL/BL support but wider x16 bus | Requires PCB redesign for 16-bit data width and different ball map; higher density per package but lower pin efficiency | Select when system needs x16 interface or higher density per chip; verify CA bus timing compatibility with controller |
| IS42S16160F-6BLI | 3.3V 256Mb SDR SDRAM, 166 MHz, 54-pin TSOP, non-LPDDR2, no ZQ/PASR/HSUL | Legacy SDR interface only; incompatible voltage, signaling, and command set; no low-power modes | Use only for cost-sensitive, non-battery applications where LPDDR2 features are unnecessary and controller lacks LPDDR2 support |
Compared with MT42L128M16D1KJ-107 IT:D and IS42S16160F-6BLI, the W979H6KBVX1E TR provides native LPDDR2-1066 performance with industrial temperature range, ZQ calibration, and PASR-making it uniquely suitable for power-constrained, thermally demanding embedded designs without requiring interface translation or layout overhaul.
Availability
W979H6KBVX1E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment DRAM, and industrial HMI controller memory requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature compliance.
Supply support for W979H6KBVX1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, with global manufacturing and quality certifications.
The W979H6KBVX1E TR belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for mobile and embedded systems needing high bandwidth, low voltage, and advanced power management features such as PASR and Deep Power-Down.
FAQ
What is the maximum data rate supported by the W979H6KBVX1E TR?
The W979H6KBVX1E TR supports a maximum data rate of 1066 Mbps (LPDDR2-1066), corresponding to a clock cycle time (tCK) of 0.938 ns. This is validated under industrial temperature conditions (-25°C to +85°C) with VDD/VDDQ = 1.2V ±0.06V and meets JEDEC JESD209-2A timing specifications including tRCD, tRP, and tRRD = 3, 3, and 2 cycles respectively.
Does the W979H6KBVX1E TR support ZQ calibration, and what external component is required?
Yes, the W979H6KBVX1E TR supports ZQ calibration for dynamic output driver impedance tuning. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS, with capacitive loading ≤10 pF. The calibration process adjusts RONPU/RONPD values to maintain signal integrity across voltage and temperature variations, as specified in sections 7.4.23 and 8.2.6 of the datasheet.
What is the purpose of Partial Array Self-Refresh (PASR) in the W979H6KBVX1E TR?
PASR in the W979H6KBVX1E TR allows selective refresh of only active memory banks via MR16 (PASR_Bank_Mask), reducing self-refresh current by up to 75% compared to full-array refresh. This feature is critical for extending battery life in portable devices and is configured through mode register writes without requiring controller firmware changes beyond standard LPDDR2 initialization sequences.
Can the W979H6KBVX1E TR operate in Deep Power-Down mode, and what is its typical exit time?
Yes, the W979H6KBVX1E TR supports Deep Power-Down mode with typical current draw below 10 µA. Its exit time from Deep Power-Down to operational readiness is ≤100 µs, as defined in section 7.4.25.1 of the datasheet. This mode preserves all internal state and requires no reinitialization upon wake-up, making it ideal for rapid wake-from-sleep scenarios in always-on embedded systems.
What are the key electrical interface standards implemented by the W979H6KBVX1E TR?
The W979H6KBVX1E TR implements JEDEC-standard LPDDR2 signaling: HSUL_12 for command/address (CA) and data mask (DM) lines, differential LVDS-style clocks (CK_t/CK_c), and differential strobes (DQS_t/DQS_c). It complies with AC/DC input levels per JESD209-2A, including VREF tolerance of ±1%, differential swing ≥300 mV, and single-ended input thresholds referenced to 0.6V.
W979H6KBVX1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H6KBVX1E TR FAQ
1.How can I place an order for W979H6KBVX1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H6KBVX1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H6KBVX1E TR reliable?
The price and inventory of W979H6KBVX1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H6KBVX1E TR is usually 5 days.
3.What payment methods are accepted for W979H6KBVX1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H6KBVX1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H6KBVX1E TR?
W979H6KBVX1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H6KBVX1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H6KBVX1E TR?
For technical support, including W979H6KBVX1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H6KBVX1E TR requirements.
6.How does Aetrix verify that W979H6KBVX1E TR is sourced from the original manufacturer or authorized distributors?
All W979H6KBVX1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H6KBVX1E TR meets industry standards.
7.What is the process for return or replacement of W979H6KBVX1E TR?
All W979H6KBVX1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H6KBVX1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H6KBVX1E TR part is unused and in its original packaging.
Return procedure for W979H6KBVX1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H6KBVX1E TR Tags
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