Winbond Electronics Corporation W979H6KBVX1I

Overview

W979H6KBVX1I from Winbond Electronics is a 4Gb (512M x 8) LPDDR2 SDRAM operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, 15-bank architecture, and -40°C to +95°C industrial temperature grade. It supports burst lengths of 4/8, programmable read/write latencies (RL=3/5, WL=1), and on-die termination calibration via ZQ.

For engineers reviewing the W979H6KBVX1I datasheet, W979H6KBVX1I pinout, W979H6KBVX1I application, or W979H6KBVX1I equivalent, key selection criteria include LPDDR2-1066 timing compliance, 15-bank bank-grouping for concurrent access, partial array self-refresh (PASR), temperature sensor integration, and HSUL_12 I/O interface compatibility with mobile SoCs.

Technical Context

This LPDDR2 device implements dual-channel 16-bit wide I/O (x16 configuration), uses differential CK_t/CK_c and DQS_t/DQS_c signaling with HSUL_12 driver output characteristics, and supports mode register programming across MR0–MR63 for configuration of burst type, auto-precharge, PASR mask, DQ calibration patterns, and thermal management.

It executes full LPDDR2 command protocol including Activate, Read/Write with BL=4/8, Precharge, Refresh, Self-Refresh, Deep Power-Down, and Mode Register Write/Read, with tRCD = tRP = 3 cycles, tRRD = 2 cycles, and tCCD = 2 cycles for seamless burst chaining in high-throughput memory subsystems.

Key Specifications

Pinout & Package

W979H6KBVX1I is housed in a 136-ball FBGA package (10.5 mm × 13.0 mm × 1.0 mm height) with 0.65 mm ball pitch, RoHS-compliant matte tin finish, and standard LPDDR2 ball assignment per JEDEC MO-245AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 SDRAM applications.

Compared with MT42L128M16D1DJ-107 WT:A and IS42S16160F-6BLI, W979H6KBVX1I delivers higher density (4Gb), 15-bank concurrency, PASR, and integrated temperature sensing - enabling lower system power and higher sustained bandwidth in thermally constrained mobile and industrial platforms.

Availability

W979H6KBVX1I is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment head units, and industrial edge AI camera modules requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for W979H6KBVX1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.

W979H6KBVX1I belongs to Winbond's LPDDR2 SDRAM product line, engineered for mobile and embedded systems demanding high bandwidth, low active/idle power, and robust thermal performance across extended temperature ranges.

FAQ

What is the maximum data rate supported by W979H6KBVX1I?

W979H6KBVX1I supports a maximum data rate of 1066 Mbps (LPDDR2-1066), corresponding to a clock period (tCK) of 0.938 ns. This is confirmed in the AC timing specifications section of the official datasheet (Rev. A01-004), where tCK(avg) is defined for 1066 Mbps operation under VDD = 1.2V and TA = 85°C conditions. The W979H6KBVX1I achieves this rate using HSUL_12 I/O drivers and differential CK/DQS signaling.

Does W979H6KBVX1I support partial array self-refresh (PASR)?

Yes, W979H6KBVX1I supports Partial Array Self-Refresh (PASR) via MR16 (MA[7:0] = 10H), allowing selective refresh of active banks only. This feature is documented in Section 7.3.13 of the datasheet and reduces self-refresh current significantly compared to full-array mode. In practice, PASR enables W979H6KBVX1I to achieve sub-100 µA retention current in typical usage patterns, making it suitable for battery-sensitive applications.

What package type and ball count does W979H6KBVX1I use?

W979H6KBVX1I uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10.5 mm × 13.0 mm × 1.0 mm with 0.65 mm ball pitch. This is specified in Section 4 ("Ball Assignment") and Section 5 ("Ball Configuration") of the datasheet. The package follows JEDEC MO-245AC mechanical standards and supports standard LPDDR2 layout guidelines including controlled-impedance routing and VREF decoupling.

Is an external ZQ calibration resistor required for W979H6KBVX1I?

Yes, W979H6KBVX1I requires a 240Ω ±1% external precision resistor connected to the ZQ pin for output driver impedance calibration (RONPU/RONPD). Section 8.2.4.5 and Figure 8.2.6.6 in the datasheet specify ZQ resistor tolerance and I-V curve requirements. Without this resistor, HSUL_12 output drive strength cannot be dynamically adjusted, risking signal integrity degradation at 1066 Mbps operation.

What is the industrial temperature range for W979H6KBVX1I?

W979H6KBVX1I is rated for operation from -40°C to +95°C, as stated in Section 8.2.3 ("Operating Temperature Conditions") of the datasheet. This qualifies it for industrial and extended-temperature automotive applications such as infotainment head units and ADAS domain controllers. The device integrates an on-die temperature sensor (Section 7.4.20) to support thermal-aware refresh and power management within this full range.