Winbond Electronics Corporation W979H6KBVX1I TR

Overview

W979H6KBVX1I TR from Winbond is a 4Gb (512M x 8) LPDDR2 SDRAM in 136-ball FBGA package, operating at 1066 Mbps data rate with 1.2V core/VDDQ supply and -40°C to +95°C industrial temperature range. It supports burst lengths of 4/8, on-die termination, partial array self-refresh, and ZQ calibration for high-speed mobile memory subsystems in embedded SoC platforms.

For engineers reviewing the W979H6KBVX1I TR datasheet, W979H6KBVX1I TR pinout, W979H6KBVX1I TR application, or W979H6KBVX1I TR equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), ball assignment mapping, MR register definitions, power-down modes, and validated alternative parts for memory subsystem design and BOM continuity planning.

Technical Context

This device implements LPDDR2 JEDEC JESD209-2A compliance with dual-channel differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c), HSUL_12 I/O interface, and 16-bank architecture. It supports all standard LPDDR2 commands including Activate, Read/Write with auto-precharge, Refresh, MRR/MRW, and Deep Power-Down.

Initialization requires controlled VDD/VDDQ ramp with CKE assertion after tINIT ≥ 200μs, followed by mode register programming (MR0–MR10, MR16, MR32, MR40). Temperature-sensing and DQ calibration are supported via dedicated mode registers and ZQ calibration sequences using external 240Ω ±1% resistor.

Key Specifications

Pinout & Package

Package: 136-ball Fine-Pitch Ball Grid Array (FBGA), 8 mm × 12.5 mm × 1.0 mm body, 0.65 mm ball pitch, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with W979H6KBVX1I TR, the MT42L128M16D1KJ-107 IT:D offers lower cost and footprint but sacrifices thermal awareness and bank-level power control, while the IS43LD16128B-107KBL provides comparable timing but lacks dynamic DQ calibration-making W979H6KBVX1I TR optimal for thermally constrained, high-reliability embedded systems demanding full LPDDR2 feature set compliance.

Availability

W979H6KBVX1I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment head units, and industrial HMI controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W979H6KBVX1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and DRAM solutions for industrial, automotive, and consumer markets.

The W979H6KB series belongs to Winbond's industrial LPDDR2 SDRAM product line, designed specifically for embedded SoC platforms needing high-speed, low-power, temperature-resilient memory with full JEDEC compliance and advanced power management features.

FAQ

What is the maximum data rate supported by the W979H6KBVX1I TR?

The W979H6KBVX1I TR supports a maximum data rate of 1066 Mbps, corresponding to a 533 MHz clock frequency with double-data-rate operation. This performance level meets LPDDR2-1066 specification requirements and is validated across the full -40°C to +95°C operating temperature range. The W979H6KBVX1I TR achieves this speed using HSUL_12 I/O drivers and differential clock/strobe signaling to maintain signal integrity at high frequencies.

Does the W979H6KBVX1I TR include on-die termination (ODT)?

Yes, the W979H6KBVX1I TR includes programmable on-die termination (ODT) with RONPU and RONPD values calibrated via ZQ calibration commands. It requires an external 240Ω ±1% precision resistor connected to the ZQ pin. The W979H6KBVX1I TR supports both short and long ZQ calibration sequences defined in MR23, enabling dynamic impedance matching to reduce signal reflections and improve timing margins.

What power-saving features does the W979H6KBVX1I TR support?

The W979H6KBVX1I TR supports multiple power-saving features including Deep Power-Down (IDD6 ≤10 μA), Partial Array Self-Refresh (PASR via MR16), and automatic power-down entry/exit controlled by CKE. It also implements temperature-sensing (MR4) to adjust refresh intervals dynamically. These features allow the W979H6KBVX1I TR to reduce active and standby power consumption significantly in battery-powered and thermally constrained embedded systems.

Is the W979H6KBVX1I TR compatible with standard LPDDR2 controllers?

Yes, the W979H6KBVX1I TR is fully compliant with JEDEC JESD209-2A LPDDR2 specification and interoperable with standard LPDDR2 memory controllers such as those in NXP i.MX6/i.MX8, Samsung Exynos, and Qualcomm Snapdragon SoCs. Its command set, timing parameters (tRCD = 3, tRP = 3), and electrical interface (HSUL_12, differential CK/DQS) match LPDDR2-1066 requirements, ensuring drop-in compatibility without controller firmware modification.

What is the ball count and package type of the W979H6KBVX1I TR?

The W979H6KBVX1I TR uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 mm × 12.5 mm × 1.0 mm with 0.65 mm ball pitch. This package is RoHS-compliant and lead-free, and its ball assignment follows JEDEC-standard LPDDR2 layout conventions for CA, DQ, CK, DQS, and power/ground distribution. The W979H6KBVX1I TR's pinout is documented in Section 4 ("Ball Assignment") of its official datasheet.