Winbond Electronics Corporation W979H6KBVX2E

Overview

W979H6KBVX2E from Winbond is a 512Mb LPDDR2 SDRAM organized as 4 banks × 16M × 16-bit, operating at 800 Mbps data rate (400 MHz clock), with 1.2V core/VDDQ supply and 134-ball VFBGA (8mm × 10.5mm × 0.6mm) package. It serves as main memory in mobile application processors for smartphones and tablets requiring low-power, high-bandwidth memory access.

For engineers reviewing the W979H6KBVX2E datasheet, W979H6KBVX2E pinout, W979H6KBVX2E application, or W979H6KBVX2E equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR), ZQ calibration support, and VFBGA-134 mechanical compatibility with mobile SoC memory interfaces.

Technical Context

This LPDDR2 device implements dual-channel 16-bit I/O architecture with HSUL_12 signaling, supports burst lengths of 4/8/16, and uses mode registers MR0–MR63 for configuration including temperature-sensing, DQ calibration (MR32/MR40), and bank masking (MR16). It requires external 240Ω ±1% ZQ reference resistor for output impedance tuning.

Power management includes deep power-down (DPD), auto-precharge, and seamless burst transitions (tCCD = 2), with initialization sequences defined for controlled ramp-up, reset recovery, and uncontrolled power-off handling per JEDEC JESD209-2A specification.

Key Specifications

Pinout & Package

W979H6KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm ball pitch, 8 mm × 10.5 mm body size, and 0.6 mm maximum height. Pin assignment follows JEDEC-standard LPDDR2 ballout for x16 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L128M16D1DJ-107 WT:A and EM68B16CWQG-107H, W979H6KBVX2E offers JEDEC-compliant VFBGA-134 pinout, verified PASR and ZQ calibration implementation, and documented thermal derating down to -30°C ambient-making it optimal for space-constrained, thermally managed mobile designs where layout reuse and power predictability are critical.

Availability

W979H6KBVX2E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet main memory subsystems, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for W979H6KBVX2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and LPDDR variants for mobile and embedded markets.

W979H6KBVX2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile platforms requiring JEDEC-compliant, high-reliability DRAM with advanced power management features.

FAQ

What is the exact memory organization of W979H6KBVX2E?

W979H6KBVX2E is organized as 4 banks × 16,777,216 words × 16 bits, totaling 536,870,912 bits (512Mb). This x16 configuration delivers 16-bit-wide data transfers synchronized to the 400 MHz differential clock, matching LPDDR2-800 timing requirements including tRCD = 3 and tRP = 3 clock cycles. The device supports both single- and double-data-rate operations within its specified voltage and temperature range.

Does W979H6KBVX2E support ZQ calibration, and what external component is required?

Yes, W979H6KBVX2E supports ZQ calibration via MR23 command to tune output driver impedance. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS, with ≤2 pF capacitive loading, as specified in section 7.4.23.5 of the datasheet. This calibration ensures consistent signal integrity across process, voltage, and temperature variations without requiring manual board-level trimming.

What power-saving modes does W979H6KBVX2E implement, and how do they differ?

W979H6KBVX2E implements three key low-power states: Power-Down (reduced IDD while retaining data), Self-Refresh (autonomous refresh with CKE low), and Deep Power-Down (IDD <10 µA, data retention guaranteed for ≥24 hours). Unlike standard Power-Down, Deep Power-Down disables internal clocks and regulators completely, requiring full reinitialization upon exit-making it ideal for extended standby in battery-operated devices.

Is W979H6KBVX2E compatible with standard LPDDR2 controllers, and what initialization sequence is required?

Yes, W979H6KBVX2E is fully JEDEC JESD209-2A compliant and interoperable with standard LPDDR2 memory controllers. Initialization requires strict adherence to the power-ramp sequence (section 7.2.3): VDD/VDDQ ramp to 1.2V, 200 µs stabilization, RESET_n assertion for ≥100 ns, followed by 200-cycle delay before first command. Skipping any step risks undefined state or initialization failure.

What is the purpose of the temperature sensor in W979H6KBVX2E, and how is it accessed?

The temperature sensor in W979H6KBVX2E provides die temperature data via MR4 (Device Temperature register), readable through Mode Register Read (MRR) command. This enables host systems to dynamically adjust refresh rate (tREFI) per JEDEC thermal derating guidelines, improving data retention reliability at elevated temperatures without external sensors or firmware overhead-critical for thermally dense mobile SoC packages.