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Winbond Electronics Corporation W979H6KBVX2E TR
- Part No.:
- W979H6KBVX2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H6KBVX2E TR.pdf
- Description:
- IC DRAM 512MBIT PAR 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W979H6KBVX2E TR from Winbond is a 512Mb LPDDR2 SDRAM organized as 4 banks × 16M × 16-bit, operating at 1.2V core/interface voltage with 800 Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and CAS latency of 3/5 in mobile application processors and baseband SoCs.
For engineers reviewing the W979H6KBVX2E TR datasheet, W979H6KBVX2E TR pinout, W979H6KBVX2E TR application, or W979H6KBVX2E TR equivalent, key selection factors include VFBGA-134 package compatibility, LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR), ZQ calibration support, and temperature sensor integration for thermal-aware memory management.
Technical Context
This LPDDR2 device implements dual-channel 16-bit I/O architecture with HSUL_12 signaling, supports mode register configuration for burst type (sequential/burst chop), auto-precharge, and bank-specific refresh. It uses differential CK_t/CK_c and DQS_t/DQS_c pairs with defined cross-point voltage and slew rate requirements.
Power management includes deep power-down (DPD), self-refresh (SRE), and power-down (PD) modes with precise entry/exit timing constraints; initialization requires controlled power ramp, CKE stabilization, and MRW sequences to configure MR0–MR10, MR16, MR32, MR40, and MR63 registers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM – low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-2 standard. |
| Capacity & Organization | 512Mb / 4 banks × 16M × 16-bit – enables 2GB/s peak bandwidth in x16 configuration with 800 Mbps/pin. |
| Data Rate | LPDDR2-800 (800 Mbps/pin) – supports 400 MHz clock frequency with double-data-rate transfers on DQ/DQS. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V – strict tolerance required for stable operation and ZQ calibration accuracy. |
| CAS Latency | CL = 3 or 5 cycles – selectable via mode register; CL3 used for RL=3 timing, CL5 for RL=5 read operations. |
| Burst Length | BL = 4 or 8 – configured by MR1[BT:BL], supports seamless burst reads/writes with tCCD = 2 cycles. |
| Refresh Interval | tREFI = 3.9 µs at 85°C – defines minimum average refresh command spacing to retain data integrity. |
Pinout & Package
W979H6KBVX2E TR is packaged in a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) with 0.4 mm ball pitch, 8.0 mm × 10.5 mm body size, and standard LPDDR2 pin assignment per JEDEC MO-245.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Master timing reference; CK_t rising edge samples commands/address; CK_c is complementary input for noise rejection. |
| DQS_t / DQS_c | Differential strobe I/O | Source-synchronous data strobe for DQ read/write capture; tDQSCKmin/tDQSCKmax define valid window relative to CK. |
| CA[0:9] | Command/address bus | 10-bit multiplexed bus for row/column/bank address and command encoding (ACT, READ, WRITE, PRE, REF, etc.). |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data path; HSUL_12 driver with programmable RONPU/RONPD calibrated via ZQ resistor. |
| DM[0:1] | Data mask input | Per-byte write mask for DQ[0:7] and DQ[8:15]; active-high to suppress corresponding byte during write bursts. |
| CKE | Clock enable | Asynchronous control to gate internal clock domains; low disables clocks and initiates power-down states. |
| RESET_n | Asynchronous reset | Active-low signal forcing device into known state; required before initialization sequence and after uncontrolled power-off. |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Configurable bank masking via MR16 to reduce current draw during SRE by refreshing only active banks. |
| ZQ Calibration | On-die impedance tuning using external 240Ω ±1% RZQ resistor to maintain output driver matching across voltage/temperature. |
| Integrated Temperature Sensor | On-chip sensor feeding MR4 register; enables dynamic thermal throttling and PASR optimization in host firmware. |
| Deep Power-Down Mode | Ultra-low IDD6 current (<10 µA typical) with full retention; exit time ≤100 µs, enabling rapid wake-up in battery-sensitive devices. |
| HSUL_12 Signaling | Low-voltage swing (≈200 mV) differential I/O standard reducing EMI and crosstalk while maintaining timing margins at 400 MHz. |
Applications
| Smartphone Application Processor Memory | Tablet Baseband SoC Interface |
|---|---|
Use Scenario: Main system memory for ARM-based application processors running Android/Linux with multi-tasking workloads. IC Role / Device Role / Timing Role: LPDDR2-800 interface providing 2GB/s bandwidth to CPU/GPU subsystems with CL3/BL4 timing. Use Value: Enables responsive UI rendering and background app switching while maintaining sub-30 µA self-refresh current at 25°C. | Use Scenario: Shared memory between LTE modem and application processor in dual-SoC tablet platforms. IC Role / Device Role / Timing Role: Coherent memory buffer supporting DMA transfers and shared descriptor tables with tRCD = 3 cycle latency. Use Value: Reduces inter-processor communication latency and eliminates need for separate SRAM buffers in cost-sensitive designs. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Graphics frame buffer and OS runtime memory in AEC-Q200 qualified infotainment systems operating at -40°C to +105°C. IC Role / Device Role / Timing Role: High-reliability LPDDR2 interface with extended temperature support and MR4 temperature reporting for thermal derating. Use Value: Ensures consistent memory performance across automotive thermal cycles without requiring external thermal sensors or firmware compensation. | Use Scenario: Real-time HMI controller with GUI acceleration, video playback, and local data logging in factory automation panels. IC Role / Device Role / Timing Role: Low-power memory subsystem supporting burst reads for display refresh and writes for event logging with PASR-enabled bank isolation. Use Value: Extends battery backup runtime during AC loss by reducing SRE current by up to 40% versus full-array refresh. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT:D | Same 512Mb x16 LPDDR2-800, but 168-ball WFBGA package; no integrated temperature sensor; MR16 PASR supported. | Requires PCB redesign for larger footprint; lacks on-die thermal sensing for dynamic refresh control. | Select when board layout accommodates WFBGA and thermal monitoring is handled externally. |
| IS42S16160F-6BLI | LPDDR2-667 (667 Mbps/pin), 1.2V, 512Mb x16; 134-ball VFBGA; no ZQ calibration or temperature sensor. | Lower bandwidth limits graphics throughput; no hardware-assisted thermal management or impedance tuning. | Choose for cost-sensitive designs where 1.33 GB/s peak bandwidth suffices and manual RON tuning is acceptable. |
Compared with MT42L128M16D1KJ-107 IT:D and IS42S16160F-6BLI, W979H6KBVX2E TR delivers tighter timing (tRCD/tRP = 3), integrated thermal awareness, and ZQ-calibrated output drivers-enabling higher reliability in thermally constrained mobile and automotive layouts without external components.
Availability
W979H6KBVX2E TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet baseband SoCs, automotive infotainment head units, and industrial HMI controllers requiring stable component supply with long-term lifecycle support.
Supply support for W979H6KBVX2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, RAM, and trusted computing ICs.
The W979H6KB series belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for power-constrained mobile and embedded applications demanding high bandwidth, low standby current, and advanced power management features.
FAQ
What is the package type and ball count for W979H6KBVX2E TR?
W979H6KBVX2E TR uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.4 mm ball pitch and 8.0 mm × 10.5 mm body dimensions. This matches JEDEC MO-245 standard for LPDDR2-800 devices and is distinct from the 168-ball WFBGA variant used in other members of the W979H6KB family. The 'VX2E' suffix confirms the VFBGA-134 configuration.
Does W979H6KBVX2E TR support ZQ calibration, and what external component is required?
Yes, W979H6KBVX2E TR supports on-die ZQ calibration to adjust output driver impedance for voltage and temperature variations. It requires an external 240Ω ±1% precision resistor (RZQ) connected between ZQ pin and VSS. Calibration occurs during MRW commands to MR23 and supports both short and long calibration cycles as defined in the datasheet timing tables.
What are the supported CAS latency and burst length configurations for W979H6KBVX2E TR?
W979H6KBVX2E TR supports CAS latency settings of CL = 3 and CL = 5, selected via mode register MR0. Burst lengths of BL = 4 and BL = 8 are configurable through MR1[BT:BL]. Valid combinations include RL = 3/BL = 4 for low-latency access and RL = 5/BL = 8 for high-throughput streaming, both compliant with LPDDR2-800 timing requirements.
How does the temperature sensor in W979H6KBVX2E TR function, and where is the data reported?
The integrated temperature sensor in W979H6KBVX2E TR provides real-time die temperature readings accessible via mode register MR4 (MA[7:0] = 04H). The value is encoded as a 4-bit field indicating one of 16 discrete temperature ranges (e.g., 0000 = <−10°C, 1111 = >110°C), enabling host firmware to adapt refresh rates or activate PASR without external sensors.
What power-saving modes are implemented in W979H6KBVX2E TR, and what are their typical current draws?
W979H6KBVX2E TR implements three key power-saving modes: Power-Down (IDD2P ≈ 35 µA), Self-Refresh (IDD4R ≈ 15 µA at 25°C), and Deep Power-Down (IDD6 ≈ 5 µA). IDD6 mode retains full memory content with exit latency ≤100 µs, making it ideal for suspend-to-RAM in portable devices where battery life is critical.
W979H6KBVX2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H6KBVX2E TR FAQ
1.How can I place an order for W979H6KBVX2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H6KBVX2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H6KBVX2E TR reliable?
The price and inventory of W979H6KBVX2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H6KBVX2E TR is usually 5 days.
3.What payment methods are accepted for W979H6KBVX2E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H6KBVX2E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H6KBVX2E TR?
W979H6KBVX2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H6KBVX2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H6KBVX2E TR?
For technical support, including W979H6KBVX2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H6KBVX2E TR requirements.
6.How does Aetrix verify that W979H6KBVX2E TR is sourced from the original manufacturer or authorized distributors?
All W979H6KBVX2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H6KBVX2E TR meets industry standards.
7.What is the process for return or replacement of W979H6KBVX2E TR?
All W979H6KBVX2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H6KBVX2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H6KBVX2E TR part is unused and in its original packaging.
Return procedure for W979H6KBVX2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H6KBVX2E TR Tags
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