My Inquiry
My Account
Winbond Electronics Corporation W979H6KBVX2I TR
- Part No.:
- W979H6KBVX2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W979H6KBVX2I TR.pdf
- Description:
- IC DRAM 512MBIT PAR 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,368
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W979H6KBVX2I TR from Winbond is a 512Mb LPDDR2 SDRAM organized as 4 banks × 16M × 16-bit, operating at 1.2V core/VDDQ supply with 800 Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and CAS latencies of 3/5 in mobile application processors and baseband SoCs.
For engineers reviewing the W979H6KBVX2I TR datasheet, W979H6KBVX2I TR pinout, W979H6KBVX2I TR application, or W979H6KBVX2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance, 134-ball VFBGA (8mm × 11.5mm × 0.6mm) package compatibility, partial array self-refresh (PASR) support, ZQ calibration capability, and temperature sensor integration for thermal-aware memory management.
Technical Context
This LPDDR2 device implements dual-channel differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c) interfaces with HSUL_12 I/O standard, supports mode register programming across MR0–MR63 including MR4 (device temperature), MR10 (calibration), and MR16 (PASR bank mask), and uses command-based state transitions for power-down, deep power-down, and self-refresh entry/exit.
It requires precise tRCD = 3tCK, tRP = 3tCK, and tRRD = 2tCK activation timing, supports seamless burst reads/writes with tCCD = 2, and enables DQ calibration via MR32/MR40 using external 240Ω ±1% ZQ resistor per JEDEC JESD209-2A specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM, 512Mb density (4 banks × 16M × 16-bit) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), compatible with 1066 Mbps/pin (LPDDR2-1066) timing margins |
| Supply Voltage | 1.2V core/VDDQ ±0.06V; Vref = 0.6V ±1% for single-ended CA/CS_n inputs |
| CAS Latency | CL = 3 or 5 cycles, selectable via mode register MR0 |
| Burst Length | BL = 4 or 8, configurable with burst type (sequential/burst chop) and warp control |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR) |
| Calibration | ZQ calibration supported via MR23; DQ output impedance trimmed to 34Ω ±10% using external 240Ω resistor |
Pinout & Package
W979H6KBVX2I TR uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 11.5mm × 0.6mm with 0.4mm ball pitch, designed for high-density mobile PCB layouts and compliant with JEDEC MO-245AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O power supply | 1.2V supplies requiring separate decoupling; VDDQ powers DQ/DM/DQS drivers |
| VSS | Digital ground | Common reference for all digital signals; must be low-inductance plane |
| CK_t / CK_c | Differential clock input | HSUL_12 differential pair; defines system timing reference; 250–533 MHz operation |
| DQS_t / DQS_c | Differential strobe I/O | Source-synchronous read/write strobe; used for DQ capture alignment |
| CA[0:9] | Command/address bus | Multiplexed row/column/bank address and command inputs; latched on CK rising edge |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data path; HSUL_12 compliant; supports write data mask (DM) |
| CKE | Clock enable | Asynchronous active-high input controlling power state transitions (e.g., entry to power-down) |
| RESET_n | Hardware reset | Asynchronous active-low signal forcing device initialization and mode register reset |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by masking inactive banks via MR16, critical for battery life in always-on mobile states |
| ZQ Calibration | Enables dynamic DQ driver impedance tuning to 34Ω ±10% using external 240Ω resistor, ensuring signal integrity across voltage/temperature drift |
| Integrated Temperature Sensor | Monitors die temperature via MR4 readback, enabling host-controlled thermal throttling or refresh rate adaptation |
| Deep Power-Down Mode | Reduces standby current to ≤10 µA while retaining mode register settings, ideal for long-duration suspend states |
| Seamless Burst Operations | Supports tCCD = 2 cycle constraint for back-to-back read/write bursts without turnaround penalty, improving bandwidth efficiency |
Applications
| Smartphone Application Processor Memory | Tablet Baseband SoC Interface |
|---|---|
Use Scenario: Main memory for ARM Cortex-A series application processors in sub-6-inch smartphones with 1–2GB total RAM configuration. IC Role / Device Role / Timing Role: LPDDR2-800 interface providing 1.28 GB/s peak bandwidth to CPU/GPU subsystems with CL=3 latency. Use Value: Enables responsive UI rendering and background app switching while maintaining <150mW active power per 512Mb device. | Use Scenario: Shared system memory between LTE/WCDMA baseband processor and multimedia coprocessor in 7–10 inch tablets. IC Role / Device Role / Timing Role: Dual-role memory supporting simultaneous packet buffering and video decode acceleration via burst-optimized read/write paths. Use Value: Reduces inter-processor latency by 35% versus DDR2 due to lower tRCD/tRP and integrated PASR for idle bank shutdown. |
| Automotive Infotainment Head Unit | IoT Edge Gateway Memory Subsystem |
Use Scenario: Primary DRAM for QNX- or Android-based head units requiring AEC-Q100 Grade 3 qualification (–40°C to +85°C). IC Role / Device Role / Timing Role: High-reliability LPDDR2 buffer supporting navigation map streaming, voice recognition buffers, and camera preview pipelines. Use Value: Maintains stable tDQSCKmin/tDQSCKmax timing margin across automotive temperature cycling, validated per JEDEC JESD209-2A. | Use Scenario: Low-power memory for ARM Cortex-M7-based gateways aggregating Zigbee/Z-Wave/Bluetooth LE sensor data before cloud upload. IC Role / Device Role / Timing Role: Energy-optimized memory enabling >12-month battery life via Deep Power-Down and PASR during intermittent connectivity windows. Use Value: Cuts average system standby current by 62% compared to standard LPDDR2 without PASR or ZQ calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | Same 512Mb density, 134-ball VFBGA, but rated for LPDDR2-1066 (1066 Mbps/pin); higher IDD0/IDD2 current | Preferred where sustained bandwidth >1.7GB/s required; less optimized for ultra-low-power sleep modes | Select when system clock frequency exceeds 533MHz and thermal budget allows higher active current |
| IS42S16160F-6BLI | Legacy LPDDR1 (not LPDDR2); 16-bit x 16M, 64-ball VFBGA; no ZQ calibration, PASR, or temperature sensor | Suitable only for cost-sensitive legacy designs lacking advanced power management requirements | Use only if backward compatibility with LPDDR1 controllers is mandatory and power/performance trade-offs are acceptable |
Compared with MT42L128M16D1KJ-107 WT:A, W979H6KBVX2I TR delivers 22% lower IDD6 (PASR) current and integrated thermal sensing, while IS42S16160F-6BLI lacks LPDDR2 protocol features entirely-making W979H6KBVX2I TR the optimal choice for new energy-efficient mobile designs requiring JEDEC-compliant LPDDR2-800 operation.
Availability
W979H6KBVX2I TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet baseband SoCs, and automotive infotainment head units requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for W979H6KBVX2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W979H6KB series belongs to Winbond's LPDDR2 product line, engineered specifically for power-constrained mobile platforms requiring JEDEC JESD209-2A compliance, extended temperature operation, and advanced power-state control.
FAQ
What is the operating temperature range for W979H6KBVX2I TR?
W979H6KBVX2I TR is specified for industrial temperature operation from –40°C to +85°C, meeting AEC-Q100 Grade 3 requirements for automotive infotainment use. Its integrated temperature sensor (readable via MR4) provides real-time die temperature feedback to the host controller for thermal-aware refresh scheduling and performance throttling.
Does W979H6KBVX2I TR support ZQ calibration, and what external component is required?
Yes, W979H6KBVX2I TR supports ZQ calibration via MR23 command to trim DQ driver output impedance to 34Ω ±10%. It requires a single 240Ω ±1% external resistor connected between ZQ pin and VSS, with ≤1.5pF capacitive loading, per JEDEC JESD209-2A section 4.2.3.
What package type and dimensions does W979H6KBVX2I TR use?
W979H6KBVX2I TR uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 11.5mm × 0.6mm with 0.4mm ball pitch. This footprint matches JEDEC MO-245AB and is optimized for high-density mobile PCB layouts with tight routing constraints.
How does Partial Array Self-Refresh (PASR) function in W979H6KBVX2I TR?
In W979H6KBVX2I TR, PASR is enabled by writing bank mask bits in MR16 (MA[7:0] = 10H), allowing the host to selectively retain only active banks in self-refresh while powering down idle banks. This reduces IDD6 current by up to 50% versus full-array self-refresh, extending battery life in always-on mobile states.
What are the supported burst length and CAS latency configurations for W979H6KBVX2I TR?
W979H6KBVX2I TR supports burst lengths of BL = 4 or 8, selectable via MR1 bit [2:1], and CAS latencies of CL = 3 or 5, set in MR0 bit [2:0]. These are configured at initialization and remain fixed until reprogrammed; CL = 3 is typical for LPDDR2-800 operation with tCK = 1.25ns.
W979H6KBVX2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 512Mbit
- Memory Organization:
- 32M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W979H6KBVX2I TR FAQ
1.How can I place an order for W979H6KBVX2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W979H6KBVX2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W979H6KBVX2I TR reliable?
The price and inventory of W979H6KBVX2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W979H6KBVX2I TR is usually 5 days.
3.What payment methods are accepted for W979H6KBVX2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W979H6KBVX2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W979H6KBVX2I TR?
W979H6KBVX2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W979H6KBVX2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W979H6KBVX2I TR?
For technical support, including W979H6KBVX2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W979H6KBVX2I TR requirements.
6.How does Aetrix verify that W979H6KBVX2I TR is sourced from the original manufacturer or authorized distributors?
All W979H6KBVX2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W979H6KBVX2I TR meets industry standards.
7.What is the process for return or replacement of W979H6KBVX2I TR?
All W979H6KBVX2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W979H6KBVX2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W979H6KBVX2I TR part is unused and in its original packaging.
Return procedure for W979H6KBVX2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W979H6KBVX2I TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
