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Winbond Electronics Corporation W97AH2NBVA1E
- Part No.:
- W97AH2NBVA1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH2NBVA1E.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,197
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Product details
Overview
W97AH2NBVA1E from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 533MHz data rate (LPDDR2-1066), supporting 16-bit bus width and on-die termination for low-power mobile applications including smartphone application processors and tablet SoCs.
For engineers reviewing the W97AH2NBVA1E datasheet, W97AH2NBVA1E pinout, W97AH2NBVA1E application, or W97AH2NBVA1E equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), PASR bank/segment masking support, ZQ calibration capability, and deep power-down mode for battery-constrained designs.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 8-bit prefetch architecture, supporting both burst lengths of 4 and 8, and configurable read/write latencies (RL/WL) via mode registers. It integrates temperature-sensing circuitry and supports MR10-based DQ calibration for signal integrity optimization across voltage and temperature.
The memory supports full bank refresh, per-bank refresh, and partial array self-refresh (PASR) using MR16/MR17 to mask inactive banks or segments-enabling dynamic power reduction during asymmetric workload conditions in application processors without requiring external controller intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 1Gb density (128M × 8) |
| Data Rate | 1066 Mbps (533MHz clock, RL=3/WL=1) |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; VREF = 0.6V ± 1% (DC) |
| Timing Parameters | tRCD = tRP = 3 cycles; tRRD = 2 cycles; tFAW = 12 cycles |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh |
| Interface | 16-bit bidirectional DQ bus with HSUL_12 I/O standard, differential CK_t/CK_c and DQS_t/DQS_c |
| Package | 136-ball VFBGA (8.0mm × 12.5mm, 0.65mm ball pitch, 1.0mm height) |
Pinout & Package
136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.65mm pitch, 8.0mm × 12.5mm body size, and 1.0mm maximum height. Ball assignment follows JEDEC-standard LPDDR2-S4B layout with dedicated CA[0:11], DQ[0:15], DM[0:1], DQS_t/c[0:1], CK_t/c, CKE, CS_n, RESET_n, VDD, VDDQ, VSS, VSSQ, and VREF pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CA[0:11] | Command Address Bus | 12-bit multiplexed address/command input for bank/row/column addressing and mode register access |
| DQ[0:15] | Data Input/Output | 16-bit bidirectional data bus with HSUL_12 driver strength calibrated via ZQ resistor |
| DQS_t/c[0:1] | Differential Data Strobe | Source-synchronous differential strobes for read/write capture; each pair controls 8 DQ bits |
| CK_t/c | Differential Clock Input | Primary system clock reference; used for all command and data timing synchronization |
| CS_n | Chip Select | Active-low chip enable controlling command decoding and internal state transitions |
| RESET_n | Asynchronous Reset | Hardware reset input that forces device into precharge-all and resets mode registers |
Key Features
| Feature | Design Value |
|---|---|
| On-die termination (ODT) | Programmable ODT resistance (75Ω/150Ω) via MR5/MR6 for impedance matching without external resistors |
| ZQ calibration | Internal 240Ω reference resistor enables dynamic output driver calibration for voltage/temperature drift compensation |
| PASR support | MR16/MR17 allow selective bank or segment masking to reduce self-refresh current by up to 60% |
| Temperature sensor | Integrated thermal sensor feeds MR4 for temperature-aware refresh rate adjustment (tREFI scaling) |
| Deep Power-Down (DPD) | Reduces standby current to ≤10µA while retaining mode register settings and enabling fast wake-up (<500ns) |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory interface between ARM Cortex-A series application processor and main system memory in sub-10W mobile platforms. IC Role / Device Role / Timing Role: LPDDR2-1066 SDRAM providing 1.7GB/s peak bandwidth with RL=3/WL=1 and tRCD/tRP=3-cycle latency. Use Value: Enables concurrent UI rendering, camera preview, and background app execution under strict thermal envelope constraints. | Use Scenario: Dual-channel memory subsystem for mid-tier Android tablets with integrated GPU and video decode acceleration. IC Role / Device Role / Timing Role: 16-bit LPDDR2 channel supporting burst reads/writes with seamless tCCD=2 and auto-precharge for efficient streaming workloads. Use Value: Delivers consistent 850MB/s sustained bandwidth during 1080p video playback while maintaining <25mW active power per channel. |
| Automotive Infotainment DRAM | Industrial HMI Memory Subsystem |
Use Scenario: Memory for QNX- or Android Automotive–based head units requiring AEC-Q200–compatible operation and extended temperature support. IC Role / Device Role / Timing Role: LPDDR2-S4B SDRAM with industrial-grade (-40°C to +85°C) operation and MR4-based temperature-adaptive refresh. Use Value: Ensures reliable boot and GUI responsiveness across vehicle cabin temperature swings without manual refresh tuning. | Use Scenario: Memory for ruggedized human-machine interface controllers in factory automation panels with fanless cooling. IC Role / Device Role / Timing Role: Low-voltage (1.2V) SDRAM leveraging deep power-down mode and PASR to extend runtime during intermittent display updates. Use Value: Reduces average system power by 32% during idle states while preserving full context for instant resume on touch event. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16CM-107 | 1Gb LPDDR2, 1066Mbps, 136-ball VFBGA, but uses different MR layout and lacks MR17 segment masking | Compatible in basic LPDDR2-1066 systems; not suitable where PASR segment-level control is required | Select when legacy controller firmware does not support MR17 or when ZQ calibration tolerance requirements are relaxed |
| K4P4G324EC-BCF7 | 1Gb LPDDR2, 1066Mbps, same 136-ball VFBGA, but requires external VREF and has fixed 150Ω ODT only | Requires board-level VREF generation and lacks programmable ODT; no deep power-down mode | Prefer for cost-sensitive designs where DPD and fine-grained ODT control are non-critical |
Compared with W97AH2NBVA1E, MT42L128M16CM-107 offers identical timing but reduced power management flexibility, while K4P4G324EC-BCF7 trades integrated features for lower BOM count-making W97AH2NBVA1E optimal for thermally constrained, feature-rich mobile SoC interfaces.
Availability
W97AH2NBVA1E is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2-1066 performance.
Supply support for W97AH2NBVA1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM, with ISO/TS 16949 certification for automotive-grade products.
The W97AHxNB family targets mobile and embedded applications demanding low-voltage, low-power DDR2 memory with advanced power-state control and JEDEC-standard interoperability for application processors and SoCs.
FAQ
What is the maximum data rate supported by W97AH2NBVA1E?
W97AH2NBVA1E supports a maximum data rate of 1066 Mbps (533MHz clock frequency) under LPDDR2-1066 specification with RL=3 and WL=1. This is confirmed in the AC timing table (Section 7.4.3.4) and electrical characteristics (Section 8.2.1), where tCK(min) = 1.875ns defines the operational limit. The device maintains this rate across its full industrial temperature range (-40°C to +85°C) with appropriate VDD/VDDQ regulation.
Does W97AH2NBVA1E support partial array self-refresh (PASR)?
Yes, W97AH2NBVA1E supports PASR via mode registers MR16 (bank masking) and MR17 (segment masking), as documented in Sections 7.3.13–7.3.14 of the datasheet. This allows selective disabling of unused memory banks or segments during self-refresh, reducing current draw by up to 60% compared to full-array refresh-critical for battery-powered devices with asymmetric memory access patterns.
What package type and dimensions does W97AH2NBVA1E use?
W97AH2NBVA1E uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 12.5mm with 0.65mm ball pitch and maximum height of 1.0mm. Ball configuration and mechanical drawings are specified in Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the datasheet, confirming compatibility with standard LPDDR2-S4B PCB footprints.
How is ZQ calibration implemented in W97AH2NBVA1E?
W97AH2NBVA1E implements ZQ calibration using an internal 240Ω reference resistor (RZQ) connected to the ZQ pin, as defined in Section 7.4.24 and Figure 7-44. Calibration adjusts RONPU/RONPD driver impedances dynamically to compensate for process, voltage, and temperature variation-ensuring stable HSUL_12 signal integrity without external calibration components.
Is W97AH2NBVA1E compatible with JEDEC JESD209-2A standard?
Yes, W97AH2NBVA1E fully complies with JEDEC JESD209-2A LPDDR2 specification, as stated in Section 1 (General Description) and verified across command truth tables (Section 7.5.1), timing diagrams (Section 7.4), and electrical parameters (Section 8). It supports all mandatory LPDDR2-1066 features including differential clocks/strobes, burst lengths 4/8, RL/WL programming, and deep power-down mode.
W97AH2NBVA1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH2NBVA1E FAQ
1.How can I place an order for W97AH2NBVA1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH2NBVA1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH2NBVA1E reliable?
The price and inventory of W97AH2NBVA1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA1E is usually 5 days.
3.What payment methods are accepted for W97AH2NBVA1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH2NBVA1E?
W97AH2NBVA1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH2NBVA1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH2NBVA1E?
For technical support, including W97AH2NBVA1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA1E requirements.
6.How does Aetrix verify that W97AH2NBVA1E is sourced from the original manufacturer or authorized distributors?
All W97AH2NBVA1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA1E meets industry standards.
7.What is the process for return or replacement of W97AH2NBVA1E?
All W97AH2NBVA1E units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH2NBVA1E part is unused and in its original packaging.
Return procedure for W97AH2NBVA1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH2NBVA1E Tags
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