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Winbond Electronics Corporation W97AH2NBVA1E TR
- Part No.:
- W97AH2NBVA1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH2NBVA1E TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,018
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Product details
Overview
W97AH2NBVA1E TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1066 Mbps data rate with 1.2V core/VDDQ and 1.8V VDD2 supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 for smartphone application processors and embedded multimedia SoCs.
For engineers reviewing the W97AH2NBVA1E TR datasheet, W97AH2NBVA1E TR pinout, W97AH2NBVA1E TR application, or W97AH2NBVA1E TR equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3, tRRD = 2), partial array self-refresh (PASR) bank/segment masking, ZQ calibration support, and HSUL_12 I/O interface compatibility with mobile memory controllers.
Technical Context
This device implements LPDDR2-S4B protocol with dual-channel 16-bit data bus (x16 organization), supports both single-ended CA/CS_n and differential CK_t/CK_c & DQS_t/DQS_c signaling, and integrates on-die termination (ODT) with RZQ-based calibration for impedance matching across voltage/temperature.
It features programmable mode registers (MR0–MR63) for configuration of burst type (wrap/non-wrap), temperature sensor readout, DQ calibration patterns (MR32/MR40), and deep power-down entry/exit sequences compliant with JEDEC JESD209-2A specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 1Gb density (64M × 16) |
| Data Rate | 1066 Mbps (LPDDR2-1066), tCK = 0.938 ns min |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V |
| Burst Length | Configurable BL = 4 or 8; non-wrap mode supported |
| CAS Latency | RL = 3 or 5; tDQSCKmin = –0.25×tCK, tDQSCKmax = +0.5×tCK |
| Refresh Interval | tREFI = 3.9 μs at 85°C; supports all-bank and per-bank refresh |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, PASR |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm, 0.65 mm ball pitch, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16) | Bi-directional data bus with HSUL_12 driver/receiver; supports DQS-strobed reads/writes |
| DQS0_t / DQS0_c | Differential Data Strobe | Source-synchronous strobe pair for DQ0–DQ7; enables precise timing capture in high-speed bursts |
| CK_t / CK_c | Differential Clock Input | Primary system clock reference; defines command/data timing windows and tCK period |
| CA0–CA12 | Command Address Bus | Single-ended inputs carrying row/column/bank address and command encoding (ACT, RD, WR, PRE, REF) |
| CS_n | Chip Select | Active-low enable for command decoding; supports multi-chip select in stacked/dual-die configurations |
| CKE | Clock Enable | Controls entry/exit from power-down modes; gated with CK to manage low-power state transitions |
| ZQ | Calibration Reference | Connects to external 240Ω ±1% resistor for RONPU/RONPD calibration and ODT tuning |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks (MR16) or segments (MR17), critical for battery life in always-on mobile UI |
| ZQ Calibration | Supports long/short calibration cycles (MR24) to maintain signal integrity under voltage/temperature drift, ensuring stable HSUL_12 I/O margins |
| Temperature Sensor | On-die sensor accessible via MR4 register; enables dynamic thermal throttling and refresh rate adaptation in compact enclosures |
| DQ Calibration Patterns | MR32/MR40 provide predefined patterns for write-leveling and gate training, simplifying DDR PHY initialization in SoC boot firmware |
| Deep Power-Down Mode | Ultra-low IDD6 current (<10 μA typical); retains memory state while cutting >99% of active power, ideal for suspend-to-RAM use cases |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia stacks. IC Role / Device Role / Timing Role: LPDDR2 x16 channel interface providing 1.7 GB/s bandwidth at 1066 Mbps; synchronized to processor's memory controller using CK/DQS timing. Use Value: Enables concurrent 4K video decode, UI rendering, and background app execution within strict 1.2V power envelope and thermal limits. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs in mid-tier tablets requiring high-bandwidth frame buffer access. IC Role / Device Role / Timing Role: Burst-mode optimized SDRAM delivering low-latency pixel/tile reads with RL=3 and seamless burst chaining (tCCD=2). Use Value: Sustains ≥60 FPS rendering at 2048×1536 resolution without frame drops, leveraging PASR to minimize GPU idle power during static UI display. |
| Automotive Infotainment Head Unit | Industrial HMI with Extended Temp Support |
Use Scenario: Memory subsystem for QNX- or Linux-based infotainment systems with navigation, voice recognition, and rear-seat entertainment. IC Role / Device Role / Timing Role: Dual-rail LPDDR2 interface (1.2V/1.8V) meeting AEC-Q200 Grade 3 (–40°C to +85°C) operation with robust CKE-controlled power management. Use Value: Ensures deterministic boot time and crash-free operation during cold-start and thermal cycling, validated per JEDEC JESD209-2A automotive timing margins. | Use Scenario: Human-machine interface in factory HMIs, medical displays, or ruggedized edge gateways requiring extended temperature reliability. IC Role / Device Role / Timing Role: High-reliability mobile SDRAM with full MR register access for runtime calibration, temperature-aware refresh, and deep power-down recovery. Use Value: Maintains data retention and command responsiveness over –40°C to +85°C without derating, supported by MR4 temperature readout and tREFI scaling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1LFA-107 IT:D | Same 1Gb x16 LPDDR2-1066, but uses 134-ball FBGA (7.5×13.0mm); different ZQ pin assignment and MR register map | Validated for Intel Atom E3800 series; lacks MR16/MR17 PASR segment masking | Select when footprint compatibility with Intel reference designs is required and bank-level PASR suffices |
| IS42S16160F-6BLI | LPDDR2-800 (800 Mbps), 1.2V-only supply (no VDD2 rail); no temperature sensor or DQ calibration pattern registers | Targeted at cost-sensitive IoT gateways; not suitable for 1066 Mbps timing-critical UI rendering | Choose only if system clock is capped at 400 MHz and thermal monitoring is handled externally |
Compared with W97AH2NBVA1E TR, MT42L128M16D1LFA-107 IT:D offers identical speed but requires PCB layout revision due to ball count/pitch mismatch and reduced PASR granularity, while IS42S16160F-6BLI trades performance and feature depth for lower BOM cost in thermally managed, bandwidth-limited applications.
Availability
W97AH2NBVA1E TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet GPU frame buffers, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2-1066 interoperability.
Supply support for W97AH2NBVA1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and mobile DRAM, serving consumer, communications, and industrial markets since 1987.
The W97AHxNB family targets mobile and embedded systems needing low-voltage, low-power LPDDR2 memory with advanced power management (PASR, Deep PD), calibrated I/O (ZQ), and integrated diagnostics (temperature sensor, DQ patterns).
FAQ
What is the ball count and package type of W97AH2NBVA1E TR?
W97AH2NBVA1E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.65 mm ball pitch. This package is JEDEC-standardized for LPDDR2 mobile memory and supports automated placement and reflow in high-density smartphone PCB assemblies. The ball map includes dedicated DQS_t/c, CK_t/c, and ZQ terminals aligned to HSUL_12 interface requirements.
Does W97AH2NBVA1E TR support partial array self-refresh (PASR)?
Yes, W97AH2NBVA1E TR supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions while powering down unused banks or sub-arrays. This reduces self-refresh current by up to 60% compared to full-array refresh, extending battery life in always-on mobile UI scenarios without compromising data retention.
What are the supply voltage requirements for W97AH2NBVA1E TR?
W97AH2NBVA1E TR requires three independent supplies: VDD/VDDQ = 1.2V ±0.06V for core logic and I/O, and VDD2 = 1.8V ±0.1V for auxiliary circuitry including temperature sensor and mode register logic. These rails must be sequenced per datasheet power-up timing (tVDD2 > tVDD > tVDDQ) to ensure reliable initialization and avoid latch-up.
How does W97AH2NBVA1E TR handle impedance calibration?
W97AH2NBVA1E TR performs on-die impedance calibration using an external 240Ω ±1% ZQ resistor connected to the ZQ pin. Calibration adjusts RONPU and RONPD driver strengths and ODT values via MR24 commands, supporting short, long, and reset calibration cycles. This maintains signal integrity across voltage/temperature variations and ensures HSUL_12 I/O compliance at 1066 Mbps.
Is W97AH2NBVA1E TR compatible with LPDDR2-1066 timing specifications?
Yes, W97AH2NBVA1E TR fully complies with JEDEC JESD209-2A LPDDR2-1066 timing, including tRCD = 3, tRP = 3, tRRD = 2, tFAW = 12, and tCCD = 2 clock cycles. It supports CAS latencies RL = 3 and RL = 5 with defined tDQSCKmin/max windows, enabling interoperability with Qualcomm, MediaTek, and NXP application processors certified for LPDDR2-1066 operation.
W97AH2NBVA1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH2NBVA1E TR FAQ
1.How can I place an order for W97AH2NBVA1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH2NBVA1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH2NBVA1E TR reliable?
The price and inventory of W97AH2NBVA1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA1E TR is usually 5 days.
3.What payment methods are accepted for W97AH2NBVA1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH2NBVA1E TR?
W97AH2NBVA1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH2NBVA1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH2NBVA1E TR?
For technical support, including W97AH2NBVA1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA1E TR requirements.
6.How does Aetrix verify that W97AH2NBVA1E TR is sourced from the original manufacturer or authorized distributors?
All W97AH2NBVA1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA1E TR meets industry standards.
7.What is the process for return or replacement of W97AH2NBVA1E TR?
All W97AH2NBVA1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH2NBVA1E TR part is unused and in its original packaging.
Return procedure for W97AH2NBVA1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH2NBVA1E TR Tags
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