Winbond Electronics Corporation W97AH2NBVA1I

Overview

W97AH2NBVA1I from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1.2V core/VDDQ supply with 533MHz data rate (1066Mbps), supporting burst lengths of 4/8 and CAS latencies of 3/5 for low-power mobile memory subsystems in smartphones and tablets.

For engineers reviewing the W97AH2NBVA1I datasheet, W97AH2NBVA1I pinout, W97AH2NBVA1I application, or W97AH2NBVA1I equivalent, this device requires attention to LPDDR2-specific timing constraints including tRCD=3, tRP=3, tRRD=2, tFAW, and ZQ calibration support-critical for power-sensitive embedded SoC interfaces.

Technical Context

This LPDDR2 SDRAM implements dual-bank architecture with 8K-word depth per bank and 16-bit data bus width, supporting both single-ended CA/CS_n signaling and differential CK/DQS pairs. It features programmable mode registers (MR0–MR63) for configuration of burst type, wrap control, temperature sensing, PASR masking, and DQ calibration patterns.

Power management includes three low-power states: Power-Down (CKE-controlled), Deep Power-Down (with retention loss), and Self-Refresh (with optional Partial Array Self-Refresh via MR16/MR17). Initialization requires strict tRST minimum of 200μs after VDD/VDDQ stabilization and supports MRW-based reset via MA[7:0]=3FH.

Key Specifications

Pinout & Package

W97AH2NBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch and 10mm × 12mm body size. Ball assignment follows JEDEC-standard LPDDR2-S4B layout with dedicated CA[0:11], DQ[0:15], DM[0:1], CK_t/c, DQS_t/c, VREF, and ZQ pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L128M16D1KE-107 IT:D and IS42S16160F-6BLI, W97AH2NBVA1I delivers higher sustained bandwidth, finer-grained power control via PASR, and integrated thermal feedback-making it optimal for thermally constrained mobile SoC platforms needing precise refresh tuning.

Availability

W97AH2NBVA1I is available at Aetrix Electronics and suitable for smartphone baseband memory, tablet application processor cache, and automotive infotainment DRAM requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W97AH2NBVA1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W97AH2NBVA1I belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile SoCs requiring JEDEC-compliant, high-density, low-voltage memory with advanced power-state management.

FAQ

What is the maximum data rate supported by W97AH2NBVA1I?

W97AH2NBVA1I supports a maximum data rate of 1066Mbps, achieved at a 533MHz clock frequency with CL=5 and BL=8. This performance level meets JEDEC LPDDR2-S4B specifications and is validated under industrial temperature conditions (–40°C to +85°C). The W97AH2NBVA1I achieves this using HSUL_12 I/O drivers and differential CK/DQS signaling to maintain signal integrity at high speeds.

Does W97AH2NBVA1I support ZQ calibration, and how is it implemented?

Yes, W97AH2NBVA1I supports ZQ calibration via its dedicated ZQ pin, which connects to an external 240Ω ±1% resistor. Calibration adjusts internal pull-up (RONPU) and pull-down (RONPD) driver impedances to compensate for process/voltage/temperature variation. The W97AH2NBVA1I executes ZQ calibration during initialization and supports short/long calibration sequences per JEDEC spec, ensuring consistent output swing and timing margins.

What power-saving modes does W97AH2NBVA1I offer, and how do they differ?

W97AH2NBVA1I provides three power-saving modes: Power-Down (CKE-gated, fast entry/exit), Deep Power-Down (<10μA, full reinitialization required), and Self-Refresh (retains data with periodic internal refresh). Unlike Power-Down, Deep Power-Down disables internal clocks and regulators; Self-Refresh allows configurable Partial Array Self-Refresh (PASR) via MR16/MR17 to mask inactive banks and reduce current by up to 50%. These modes are managed entirely within the W97AH2NBVA1I.

How is temperature monitoring implemented in W97AH2NBVA1I?

W97AH2NBVA1I integrates a die-temperature sensor accessible through Mode Register MR4 (MA[7:0] = 04H). The sensor provides 8-bit digital output representing junction temperature, enabling host systems to dynamically adjust refresh intervals (tRFC) or trigger thermal throttling. This feature is factory-calibrated and does not require external components. Temperature data is read via standard MR read command, and the W97AH2NBVA1I reports values in degrees Celsius with ±3°C accuracy over its operating range.

What is the ball count and package type of W97AH2NBVA1I?

W97AH2NBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch and 10mm × 12mm body dimensions. The 'VA1' suffix in the part number explicitly denotes this VFBGA-136 configuration. Ball assignments follow JEDEC LPDDR2-S4B standard layout, including dedicated CA, DQ, CK_t/c, DQS_t/c, VREF, and ZQ terminals-verified in Winbond's official datasheet revision A01-003.