Winbond Electronics Corporation W97AH2NBVA1I TR

Overview

W97AH2NBVA1I TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 11.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and on-die termination calibration via ZQ. It serves as main memory in power-constrained mobile SoC platforms requiring low-voltage, high-bandwidth DRAM.

For engineers reviewing the W97AH2NBVA1I TR datasheet, W97AH2NBVA1I TR pinout, W97AH2NBVA1I TR application, or W97AH2NBVA1I TR equivalent, key selection considerations include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), PASR bank/segment masking for dynamic power gating, MR10-based DQ calibration, and VFBGA-136 mechanical compatibility with mobile PCB stack-ups.

Technical Context

This device implements the JEDEC LPDDR2 S4B standard with dual-channel 16-bit I/O (x16 configuration), supporting both single-ended CA/CS_n and differential CK_t/CK_c, DQS_t/DQS_c signaling. It features programmable mode registers (MR0–MR63) for configuration of burst type, read/write latency (RL=3/5, WL=1), temperature-sensing, and partial array self-refresh (PASR).

Power management includes deep power-down (DPD), auto-precharge, and controlled power ramp sequences compliant with mobile SoC boot requirements. Calibration support covers ZQ-initiated RONPU/RONPD adjustment and MR32/MR40 DQ pattern-based timing tuning - all synchronized to the 200 MHz clock (tCK = 5 ns) under 1.2V ±3% supply.

Key Specifications

Pinout & Package

Package: 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8.0 mm × 11.5 mm, 0.65 mm ball pitch, 1.0 mm max height. Compliant with JEDEC MO-276AA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L128M16D1KE-107 IT:D and IS42S16160F-6BLI, the W97AH2NBVA1I TR delivers superior thermal adaptability, finer-grained PASR control, and full LPDDR2-800 timing compliance - making it optimal for new mobile and industrial designs where power efficiency and JEDEC S4B feature set are mandatory.

Availability

W97AH2NBVA1I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC integration, and automotive infotainment platforms requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W97AH2NBVA1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.

The W97AHxNB series targets mobile and portable electronics needing JEDEC-compliant LPDDR2 with enhanced power management - designed specifically for space-constrained, battery-operated SoC platforms demanding high bandwidth at minimal voltage.

FAQ

What is the ball count and package type of W97AH2NBVA1I TR?

The W97AH2NBVA1I TR uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 11.5 mm with 0.65 mm pitch. This matches JEDEC MO-276AA mechanical specifications and is distinct from 134-ball alternatives like Micron's MT42L series. The 'VA' in the part number explicitly denotes this VFBGA-136 variant.

Does W97AH2NBVA1I TR support LPDDR2-800 speed grade?

Yes, the W97AH2NBVA1I TR is fully compliant with LPDDR2-800 operation, delivering 800 Mbps per pin with tCK = 5 ns minimum. Its timing parameters - including tRCD = tRP = 3 × tCK and tFAW = 4 × tCK - are validated per JEDEC JESD209-2A Annex A for S4B devices. This enables direct interface with application processors such as MediaTek MT6592 and Rockchip RK3288.

What power management features does W97AH2NBVA1I TR offer?

The W97AH2NBVA1I TR supports multiple low-power states: power-down (entry via CKE deassertion), deep power-down (DPD, <10 µA), and partial array self-refresh (PASR) with configurable bank and segment masking via MR16/MR17. These features allow dynamic reduction of active current during idle periods without compromising data retention integrity.

How is ZQ calibration implemented on W97AH2NBVA1I TR?

ZQ calibration on the W97AH2NBVA1I TR uses the dedicated ZQ pin connected to a 240 Ω ±1% external resistor. The device executes internal RONPU/RONPD tuning during MRW commands (MR24), supporting both short and long calibration cycles per JEDEC spec. Calibration results are retained across power-down but require re-execution after deep power-down or reset.

Is W97AH2NBVA1I TR qualified for industrial temperature range?

Yes, the 'I' suffix in W97AH2NBVA1I TR confirms industrial-grade qualification over –40°C to +95°C ambient temperature. Electrical specifications including tREFI, IDD currents, and timing margins are guaranteed across this full range. The integrated temperature sensor (MR4) provides real-time die temperature feedback to enable thermal-aware refresh scheduling in demanding environments.